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    • 1. 发明申请
    • Program Generating Apparatus, Method of Generating Program, and Medium
    • 程序生成装置,程序生成方法和介质
    • US20130019230A1
    • 2013-01-17
    • US13423641
    • 2012-03-19
    • Yu NakanishiToshiki KizuShunsuke SasakiTakahiro Tokuyoshi
    • Yu NakanishiToshiki KizuShunsuke SasakiTakahiro Tokuyoshi
    • G06F9/45
    • G06F11/3419G06F8/47G06F11/3447G06F11/3466G06F2201/865
    • According to an embodiment, a program generating apparatus includes a cross-compiling unit, a processing time calculating unit, a source code converting unit, and a self-compiling unit. The cross-compiling unit generates sin instruction string for each basic block based on a source code and specifies instructions performing a memory access. The processing time calculating unit calculates a processing time of the instruction string for each basic block. The source code converting unit inserts a first code, which adds the processing time of the basic block to an accumulated processing time variable of an executed thread of the basic block, and a second code, which calculates the processing time for the specified memory access and adds the calculated processing time to the accumulated processing time variable, into the source code. The self-compiling unit generates a performance estimating program outputting the accumulated processing time variable of the thread executed.
    • 根据实施例,程序生成装置包括交叉编译单元,处理时间计算单元,源代码转换单元和自编译单元。 交叉编译单元基于源代码为每个基本块生成sin指令串,并指定执行存储器访问的指令。 处理时间计算单元计算每个基本块的指令串的处理时间。 源代码转换单元插入将基本块的处理时间添加到基本块的执行线程的累积处理时间变量的第一代码和计算指定存储器访问的处理时间的第二代码, 将计算出的处理时间添加到累积处理时间变量中,加入到源代码中。 自编译单元生成输出执行的线程的累积处理时间变量的性能估计程序。
    • 2. 发明授权
    • Probe card for semiconductor wafer
    • 半导体晶圆探头卡
    • US08159251B2
    • 2012-04-17
    • US12801790
    • 2010-06-25
    • Shunsuke SasakiHiroshi Nakayama
    • Shunsuke SasakiHiroshi Nakayama
    • G01R31/00
    • G01R1/07314G01R1/44
    • A probe card includes a plurality of probes that contacts a plurality of electrodes provided in the semiconductor wafer and that inputs or outputs an electrical signal in or from the electrodes, a probe head that holds the probes, a substrate having a wiring which is provided near the surface of the substrate facing the probe head so as to be contactable with the probe head and is connected to the probes, a core layer formed of a material which is buried in the substrate and has a coefficient of thermal expansion lower than that of the substrate, and a connecting member that electrically connects at least some of the probes with an external device via the wiring.
    • 探针卡包括接触设置在半导体晶片中的多个电极并且在电极内或从电极输入或输出电信号的多个探针,保持探针的探针头,具有接近设置的布线的基板 所述基板的表面面向所述探针头,以便能够与所述探针头接触,并且与所述探针相连接,所述芯层由掩埋在所述基板中的材料形成,并且具有低于所述探针的热膨胀系数 基板和连接构件,其通过布线将至少一些探针与外部装置电连接。
    • 4. 发明申请
    • OPTICAL PROPERTY ALTERING APPARATUS
    • 光学性能改装器
    • US20100226000A1
    • 2010-09-09
    • US12714870
    • 2010-03-01
    • Shunsuke SasakiKazuki Nishizawa
    • Shunsuke SasakiKazuki Nishizawa
    • G02F1/29
    • G02B27/0068G02F1/29G02F2001/294
    • An optical property altering apparatus includes an optical property altering element formed by inductors that are smaller than a wavelength of visible light, mutually connected by connecting lines, and arranged in a single plane; a photoconductor that is excited by incident light and generates alternating current of a frequency identical to that of the incident light; and an amplifying circuit that amplifies the alternating current generated by the photoconductor and supplies the amplified alternating current to the optical property altering element, where the optical property altering element, through supply of the alternating current from the amplifying circuit, arbitrarily alters a refractive index of the incident light.
    • 光学特性改变装置包括由电感器形成的光学特性改变元件,其小于可见光的波长,通过连接线相互连接并且布置在单个平面中; 由入射光激发的光电导体产生与入射光的频率相同的频率的交流电; 以及放大电路,其放大由感光体产生的交流电流,并将放大的交流电流提供给光学特性改变元件,其中光学特性改变元件通过来自放大电路的交流电的供给任意改变折射率 事件光。
    • 5. 发明申请
    • Probe card
    • 探针卡
    • US20090219042A1
    • 2009-09-03
    • US11991296
    • 2006-08-30
    • Shunsuke SasakiHiroshi Nakayama
    • Shunsuke SasakiHiroshi Nakayama
    • G01R31/02G01R1/067
    • G01R1/07314G01R1/44
    • A probe card includes a plurality of probes that contacts a plurality of electrodes provided in the semiconductor wafer and that inputs or outputs an electrical signal in or from the electrodes, a probe head that holds the probes, a substrate having a wiring which is provided near the surface of the substrate facing the probe head so as to be contactable with the probe head and is connected to the probes, a core layer formed of a material which is buried in the substrate and has a coefficient of thermal expansion lower than that of the substrate, and a connecting member that electrically connects at least some of the probes with an external device via the wiring.
    • 探针卡包括接触设置在半导体晶片中的多个电极并且在电极内或从电极输入或输出电信号的多个探针,保持探针的探针头,具有接近设置的布线的基板 所述基板的表面面向所述探针头,以便能够与所述探针头接触,并且与所述探针相连接,所述芯层由掩埋在所述基板中的材料形成,并且具有低于所述探针的热膨胀系数 基板和连接构件,其通过布线将至少一些探针与外部装置电连接。
    • 6. 发明授权
    • Optical property altering apparatus
    • 光学性能改变设备
    • US08120834B2
    • 2012-02-21
    • US12714870
    • 2010-03-01
    • Shunsuke SasakiKazuki Nishizawa
    • Shunsuke SasakiKazuki Nishizawa
    • G02F1/03G02F1/09
    • G02B27/0068G02F1/29G02F2001/294
    • An optical property altering apparatus includes an optical property altering element formed by inductors that are smaller than a wavelength of visible light, mutually connected by connecting lines, and arranged in a single plane; a photoconductor that is excited by incident light and generates alternating current of a frequency identical to that of the incident light; and an amplifying circuit that amplifies the alternating current generated by the photoconductor and supplies the amplified alternating current to the optical property altering element, where the optical property altering element, through supply of the alternating current from the amplifying circuit, arbitrarily alters its refractive index.
    • 光学特性改变装置包括由电感器形成的光学特性改变元件,其小于可见光的波长,通过连接线相互连接并且布置在单个平面中; 由入射光激发的光电导体产生与入射光的频率相同的频率的交流电; 以及放大电路,其放大由感光体产生的交流电流,并将放大的交流电流提供给光学特性改变元件,其中光学特性改变元件通过来自放大电路的交流电的供给任意地改变其折射率。
    • 7. 发明申请
    • Probe card
    • 探针卡
    • US20110050266A1
    • 2011-03-03
    • US12801790
    • 2010-06-25
    • Shunsuke SasakiHiroshi Nakayama
    • Shunsuke SasakiHiroshi Nakayama
    • G01R31/00
    • G01R1/07314G01R1/44
    • A probe card includes a plurality of probes that contacts a plurality of electrodes provided in the semiconductor wafer and that inputs or outputs an electrical signal in or from the electrodes, a probe head that holds the probes, a substrate having a wiring which is provided near the surface of the substrate facing the probe head so as to be contactable with the probe head and is connected to the probes, a core layer formed of a material which is buried in the substrate and has a coefficient of thermal expansion lower than that of the substrate, and a connecting member that electrically connects at least some of the probes with an external device via the wiring.
    • 探针卡包括接触设置在半导体晶片中的多个电极并且在电极内或从电极输入或输出电信号的多个探针,保持探针的探针头,具有接近设置的布线的基板 所述基板的表面面向所述探针头,以便能够与所述探针头接触,并且与所述探针相连接,所述芯层由掩埋在所述基板中的材料形成,并且具有低于所述探针的热膨胀系数 基板和连接构件,其通过布线将至少一些探针与外部装置电连接。
    • 9. 发明申请
    • MULTI-CORE PROCESSOR AND MULTI-CORE PROCESSOR SYSTEM
    • 多核处理器和多核处理器系统
    • US20100325360A1
    • 2010-12-23
    • US12813567
    • 2010-06-11
    • Yumi YoshitakeShunsuke Sasaki
    • Yumi YoshitakeShunsuke Sasaki
    • G06F12/08
    • G06F12/0223G06F12/0817
    • In one embodiment, a multi-core processor includes a plurality of processor cores that each includes a cache and that uses a management target area allocated as a main memory in a memory area. The multi-core processor includes a state managing unit and a management-target-area. The state managing unit manages a first state in which the small area is not allocated to the processor core and a second state in which the small area is allocated to the processor core for each small area included in the management target area. The management-target-area increasing and decreasing unit increases and decreases the management target area by increasing and decreasing the small area in the first state in the management target area.
    • 在一个实施例中,多核处理器包括多个处理器核,每个处理器核包括高速缓存,并且使用在存储器区域中分配为主存储器的管理目标区域。 多核处理器包括状态管理单元和管理目标区域。 状态管理单元管理小区域未分配给处理器核心的第一状态以及其中小区域被分配给管理目标区域中包括的每个小区域的处理器核心的第二状态。 管理目标区域增减单位通过增加和减少管理对象区域的第一状态的小区域来增加和减少管理目标区域。