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1. 发明授权

US08360817B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08360817B2
公开(公告)日：2013-01-29
申请号：US12730409
申请日：2010-03-24
申请人： Yu Ishii , Yoichi Shiokawa , Jyoji Heianna , Hisanori Matsuo
发明人： Yu Ishii , Yoichi Shiokawa , Jyoji Heianna , Hisanori Matsuo
IPC分类号： B24B1/00
CPC分类号： B24B57/02 , B24B37/04 , B24B49/00
摘要： A polishing apparatus can perform more precise control of a polishing profile without carrying out many polishing tests in advance. The polishing apparatus includes: a polishing table 22 having a polishing surface 52a; a top ring 24 for holding a polishing object W and pressing the polishing object W against the polishing surface 52a; a polishing liquid supply nozzle 26 for supplying a polishing liquid to the polishing surface 52a; a movement mechanism 70 for moving a polishing liquid supply position 26a of the polishing liquid supply nozzle 26 approximately along the radial direction of the polishing surface 52a; a controller 66 for controlling the movement mechanism 70; and a simulator 72 for predicting the relationship between the polishing liquid supply position 26a of the polishing liquid supply nozzle 26 and a polishing profile, performing a simulation and outputting data to the controller 66.
摘要翻译：抛光装置可以对抛光轮廓进行更精确的控制，而无需事先进行许多抛光测试。抛光装置包括：具有抛光表面52a的抛光台22; 用于保持抛光对象W并将抛光对象W压靠在抛光表面52a上的顶环24; 用于将抛光液供给到研磨面52a的研磨液供给喷嘴26; 移动机构70，其用于使抛光液供给喷嘴26的研磨液供给位置26a大致沿研磨面52a的径向移动; 用于控制移动机构70的控制器66; 以及用于预测抛光液供给喷嘴26的研磨液供给位置26a与抛光轮廓之间的关系的模拟器72，进行模拟，并向控制器66输出数据。

2. 发明申请

US20100255756A1 POLISHING APPARATUS AND POLISHING METHOD 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：US20100255756A1
公开(公告)日：2010-10-07
申请号：US12730409
申请日：2010-03-24
申请人： Yu ISHII , Yoichi Shiokawa , Jyoji Heianna , Hisanori Matsuo
发明人： Yu ISHII , Yoichi Shiokawa , Jyoji Heianna , Hisanori Matsuo
IPC分类号： B24B49/00 , B24B1/00
CPC分类号： B24B57/02 , B24B37/04 , B24B49/00
摘要： A polishing apparatus can perform more precise control of a polishing profile without carrying out many polishing tests in advance. The polishing apparatus includes: a polishing table 22 having a polishing surface 52a; a top ring 24 for holding a polishing object W and pressing the polishing object W against the polishing surface 52a; a polishing liquid supply nozzle 26 for supplying a polishing liquid to the polishing surface 52a; a movement mechanism 70 for moving a polishing liquid supply position 26a of the polishing liquid supply nozzle 26 approximately along the radial direction of the polishing surface 52a; a controller 66 for controlling the movement mechanism 70; and a simulator 72 for predicting the relationship between the polishing liquid supply position 26a of the polishing liquid supply nozzle 26 and a polishing profile, performing a simulation and outputting data to the controller 66.
摘要翻译：抛光装置可以对抛光轮廓进行更精确的控制，而无需事先进行许多抛光测试。抛光装置包括：具有抛光表面52a的抛光台22; 用于保持抛光对象W并将抛光对象W压靠在抛光表面52a上的顶环24; 用于将抛光液供给到研磨面52a的研磨液供给喷嘴26; 移动机构70，其用于使抛光液供给喷嘴26的研磨液供给位置26a大致沿研磨面52a的径向移动; 用于控制移动机构70的控制器66; 以及用于预测抛光液供给喷嘴26的研磨液供给位置26a与抛光轮廓之间的关系的模拟器72，进行模拟，并向控制器66输出数据。

3. 发明申请

US20120276816A1 POLISHING METHOD 有权
标题翻译：抛光方法
公开(公告)号：US20120276816A1
公开(公告)日：2012-11-01
申请号：US13454146
申请日：2012-04-24
申请人： Katsutoshi Ono , Yu Ishii , Hisanori Matsuo , Kuniaki Yamaguchi
发明人： Katsutoshi Ono , Yu Ishii , Hisanori Matsuo , Kuniaki Yamaguchi
IPC分类号： B24B1/00 , B24B37/005
CPC分类号： B24B37/015 , B24B37/042 , B24B37/105 , B24B57/02
摘要： A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad.
摘要翻译：提供了一种用于在不降低抛光速率的情况下减少使用的抛光液量的抛光方法。抛光方法包括预先确定抛光液的供给流量与抛光衬底时的抛光速度之间的关系，而不控制抛光垫的表面温度，以及供给流量之间的关系抛光液体和抛光时的抛光速度，同时将抛光垫的表面温度控制在预定水平，并且将研磨液连续地供给到抛光垫的表面，以便当基板抛光，同时将抛光垫的表面温度控制在预定水平，而不是在不控制抛光垫的表面温度的情况下抛光衬底。

4. 发明授权

US09067296B2 Polishing method 有权
标题翻译：抛光方法
公开(公告)号：US09067296B2
公开(公告)日：2015-06-30
申请号：US13454146
申请日：2012-04-24
申请人： Katsutoshi Ono , Yu Ishii , Hisanori Matsuo , Kuniaki Yamaguchi
发明人： Katsutoshi Ono , Yu Ishii , Hisanori Matsuo , Kuniaki Yamaguchi
IPC分类号： B24B37/015 , B24B37/04 , B24B37/10 , B24B57/02
CPC分类号： B24B37/015 , B24B37/042 , B24B37/105 , B24B57/02
摘要： A polishing method for reducing an amount of polishing liquid used without lowering a polishing rate is provided. The polishing method comprises determining, in advance, the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished without controlling a surface temperature of the polishing pad, and the relationship between a supply flow rate of a polishing liquid and a polishing rate at the time the substrate is polished while controlling a surface temperature of the polishing pad at a predetermined level, and continuously supplying the polishing liquid to the surface of the polishing pad to achieve a higher polishing rate when the substrate is polished while controlling the surface temperature of the polishing pad at the predetermined level, than when the substrate is polished without controlling the surface temperature of the polishing pad.
摘要翻译：提供了一种用于在不降低抛光速率的情况下减少使用的抛光液量的抛光方法。抛光方法包括事先确定抛光液的供给流量与抛光基板时的抛光速度之间的关系，而不控制抛光垫的表面温度，以及供给流量之间的关系抛光液体和抛光时的抛光速度，同时将抛光垫的表面温度控制在预定水平，并且将研磨液连续地供给到抛光垫的表面，以便当基板抛光，同时将抛光垫的表面温度控制在预定水平，而不是在不控制抛光垫的表面温度的情况下抛光衬底。

5. 发明授权

US08241426B2 CMP polishing method, CMP polishing apparatus, and process for producing semiconductor device 有权
标题翻译： CMP抛光方法，CMP抛光装置以及半导体装置的制造方法
公开(公告)号：US08241426B2
公开(公告)日：2012-08-14
申请号：US11795697
申请日：2005-12-21
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

6. 发明申请

US20090047785A1 CMP Polishing Method, CMP Polishing Apparatus, and Process for Producing Semiconductor Device 有权
标题翻译： CMP抛光方法，CMP抛光装置和用于制造半导体器件的方法
公开(公告)号：US20090047785A1
公开(公告)日：2009-02-19
申请号：US11795697
申请日：2005-12-21
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： H01L21/306 , B24B7/00
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

7. 发明授权

US06939208B2 Polishing apparatus 有权
标题翻译：抛光设备
公开(公告)号：US06939208B2
公开(公告)日：2005-09-06
申请号：US09787121
申请日：2001-01-22
申请人： Kenji Kamimura , Norio Kimura , Satoshi Okamura , Hideo Aizawa , Makoto Akagi , Katsuhiko Tokushige , Hisanori Matsuo , Manabu Tsujimura
发明人： Kenji Kamimura , Norio Kimura , Satoshi Okamura , Hideo Aizawa , Makoto Akagi , Katsuhiko Tokushige , Hisanori Matsuo , Manabu Tsujimura
IPC分类号： B24B53/00 , B24B53/007 , B24B53/017 , H01L21/306
CPC分类号： B24B53/017 , B24B29/005 , B24B53/003 , H01L21/30625
摘要： The present invention relates to a polishing apparatus for polishing a workpiece, such as a semiconductor wafer, to a flat mirror finish. The polishing apparatus comprises a polishing table having a polishing surface, and a top ring, and the workpiece is interposed between the polishing table and the top ring, and pressed at a predetermined pressure to polish the workpiece. The polishing apparatus comprises at least two dressing units for dressing the polishing surface by being brought into contact with the ppolishing surface, which is a surface of a polishing cloth.
摘要翻译：本发明涉及一种用于将诸如半导体晶片的工件抛光成平面镜面抛光的抛光装置。抛光装置包括具有抛光表面的抛光台和顶环，并且将工件插入在抛光台和顶环之间，并以预定压力按压以抛光工件。抛光装置包括至少两个修整单元，用于通过与作为抛光布表面的抛光表面接触来修整抛光表面。

8. 发明授权

US06520845B2 Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US06520845B2
公开(公告)日：2003-02-18
申请号：US09813323
申请日：2001-03-21
申请人： Kazuto Hirokawa , Hirokuni Hiyama , Yutaka Wada , Hisanori Matsuo
发明人： Kazuto Hirokawa , Hirokuni Hiyama , Yutaka Wada , Hisanori Matsuo
IPC分类号： B24B2900
CPC分类号： B24B37/30 , B24B7/228 , B24B37/105 , B24B41/068 , B24B49/16
摘要： A polishing apparatus comprises a polishing member that has a wide stable polishing range to perform effective polishing, even if a rotation axis moves away from the edge of a workpiece. A polishing member holder holds the polishing member, and a workpiece holder holds the workpiece to be polished. A drive device produces a relative sliding motion between the polishing member and the workpiece. At least one holder of either the polishing member holder or the workpiece holder is rotatable about a rotation axis and is tiltable with respect to other holder. Such one holder is provided with a pressing mechanism to stabilize orientation or desired posture of the one holder by applying an adjusting pressure to the one holder at a location away from the rotation axis.
摘要翻译：抛光装置包括抛光构件，其具有宽的稳定的抛光范围以进行有效的抛光，即使旋转轴线远离工件的边缘移动。抛光构件保持器保持抛光构件，并且工件保持器保持待抛光的工件。驱动装置在抛光构件和工件之间产生相对滑动运动。抛光构件保持器或工件保持器中的至少一个保持器可围绕旋转轴线旋转并且可相对于其他保持器倾斜。这种一个保持器设置有按压机构，以通过在远离旋转轴线的位置向一个保持器施加调节压力来稳定一个保持器的取向或期望姿势。

9. 发明授权

US06220945B1 Polishing apparatus 失效
公开(公告)号：US06220945B1
公开(公告)日：2001-04-24
申请号：US09296567
申请日：1999-04-22
申请人： Kazuto Hirokawa , Hirokuni Hiyama , Yutaka Wada , Hisanori Matsuo
发明人： Kazuto Hirokawa , Hirokuni Hiyama , Yutaka Wada , Hisanori Matsuo
IPC分类号： B24B2900
CPC分类号： B24B37/30 , B24B7/228 , B24B37/105 , B24B41/068 , B24B49/16
摘要： A polishing apparatus comprises a polishing member that has a wide stable polishing range to perform effective polishing, even if a rotation axis moves away from the edge of a workpiece. A polishing member holder holds the polishing member, and a workpiece holder holds the workpiece to be polished. A drive device produces a relative sliding motion between the polishing member and the workpiece. At least one holder of either the polishing member holder or the workpiece holder is rotatable about a rotation axis and is tiltable with respect to other holder. Such one holder is provided with a pressing mechanism to stabilize orientation or desired posture of the one holder by applying an adjusting pressure to the one holder at a location away from the rotation axis.

10. 发明授权

US06672945B1 Polishing apparatus and dressing method 失效
标题翻译：抛光装置和敷料方法
公开(公告)号：US06672945B1
公开(公告)日：2004-01-06
申请号：US09641347
申请日：2000-08-18
申请人： Hisanori Matsuo , Hirokuni Hiyama , Yutaka Wada , Kazuto Hirokawa
发明人： Hisanori Matsuo , Hirokuni Hiyama , Yutaka Wada , Kazuto Hirokawa
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B49/14 , B24B53/001 , B24B53/12 , B24B55/02
摘要： A abstract polishing apparatus has a substrate carrier a substrate and an abrasive member having a polishing surface. The surface is slidingly engaged with the substrate in order to effect polishing. The dressing device includes a light source when generating light rays for irradiating the polishing surface of the abrasive member, whereby dressing the polishing surface. A temperature control system control the temperature of the polishing surface of the abrasive member by sensing the temperature of the polishing surface with the temperature sensor. Mechanical dressing of the polishing surface, in addition to dressing by radiation of the polishing surface, may also be employed in order to flatten the entire polishing surface. The abrasive member preferably includes an abrasive particles, a binder and a photophilic for promoting the dressing of the polishing surface by light rays.
摘要翻译：抽象抛光装置具有基板载体，基底和具有抛光表面的磨料构件。该表面与衬底滑动接合以便进行抛光。修整装置在产生用于照射研磨部件的研磨面的光线时包括光源，由此修整研磨面。温度控制系统通过用温度传感器感测研磨表面的温度来控制研磨部件的抛光表面的温度。抛光表面的机械修整除了通过抛光表面的辐射进行修整之外，还可以采用平整整个抛光表面。磨料构件优选地包括研磨颗粒，粘合剂和亲水性用于通过光线促进抛光表面的修整。

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