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1. 发明申请

US20120315831A1 CMP Polishing Method, CMP Polishing Apparatus, and Process for Producing Semiconductor Device 审中-公开
标题翻译： CMP抛光方法，CMP抛光装置和用于制造半导体器件的方法
公开(公告)号：US20120315831A1
公开(公告)日：2012-12-13
申请号：US13545359
申请日：2012-07-10
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： B24B37/34
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

2. 发明授权

US07384622B2 Zeolite nano-crystal suspension, zeolite nano-crystal production method, zeolite nano-crystal suspension production method, and zeolite thin film 失效
标题翻译：沸石纳米晶体悬浮液，沸石纳米晶体制备方法，沸石纳米晶体悬浮液制备方法和沸石薄膜
公开(公告)号：US07384622B2
公开(公告)日：2008-06-10
申请号：US11212844
申请日：2005-08-29
申请人： Nobuhiro Hata , Guoqing Guan , Takenobu Yoshino , Syozo Takada
发明人： Nobuhiro Hata , Guoqing Guan , Takenobu Yoshino , Syozo Takada
IPC分类号： C01B39/36 , C01B37/02
CPC分类号： C01B37/02 , C01B39/365
摘要： A zeolite suspension contains MEL-type zeolite nanocrystals as a principal component. A method for the production of MEL-type zeolite nanocrystals includes the steps of aging a synthesized solution comprising TEOS, TBAOH, water and alcohol and subjecting the aged solution to hydrothermal crystallization treatment at a predetermined temperature. A method for the production of a zeolite suspension includes the steps of aging a synthesized solution comprising TEOS, TBAOH, water and alcohol, subjecting the aged solution to hydrothermal crystallization treatment to produce MEL-type zeolite nanocrystals and mixing a composition having a surfactant dissolved in at least one organic solvent or a mixed solvent of alcohol-based organic solvents, amide-based organic solvents and ketone-based organic solvents with a zeolite nano-crystal suspension containing the MEL-type zeolite nanocrystals to produce a zeolite suspension.
摘要翻译：沸石悬浮液含有MEL型沸石纳米晶体作为主要成分。制造MEL型沸石纳米晶体的方法包括使包含TEOS，TBAOH，水和醇的合成溶液老化并使老化溶液在预定温度下进行水热结晶处理的步骤。制备沸石悬浮液的方法包括将包含TEOS，TBAOH，水和醇的合成溶液老化的步骤，将老化溶液进行水热结晶处理以产生MEL型沸石纳米晶体，并将具有表面活性剂溶解的组合物至少一种有机溶剂或醇基有机溶剂，酰胺类有机溶剂和酮基有机溶剂的混合溶剂与含有MEL型沸石纳米晶体的沸石纳米晶体悬浮液，以产生沸石悬浮液。

3. 发明授权

US08241426B2 CMP polishing method, CMP polishing apparatus, and process for producing semiconductor device 有权
标题翻译： CMP抛光方法，CMP抛光装置以及半导体装置的制造方法
公开(公告)号：US08241426B2
公开(公告)日：2012-08-14
申请号：US11795697
申请日：2005-12-21
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： B08B3/12 , B08B6/00 , B08B7/00 , B08B7/02
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

4. 发明申请

US20090047785A1 CMP Polishing Method, CMP Polishing Apparatus, and Process for Producing Semiconductor Device 有权
标题翻译： CMP抛光方法，CMP抛光装置和用于制造半导体器件的方法
公开(公告)号：US20090047785A1
公开(公告)日：2009-02-19
申请号：US11795697
申请日：2005-12-21
申请人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
发明人： Syozo Takada , Hisanori Matsuo , Akira Ishikawa
IPC分类号： H01L21/306 , B24B7/00
CPC分类号： H01L21/02074 , C11D7/5013 , C11D7/5022 , C11D11/0047 , H01L21/76826 , H01L21/76828
摘要： When the remaining slurry and polishing residue are removed by cleaning with a cleaning liquid (preferably a cleaning liquid containing a surfactant), organic matter in the cleaning liquid containing a surfactant seeps into the interlayer insulating film 3. Therefore, the substrate is subsequently washed with an organic solvent or a solution containing an organic solvent, thus washing away the organic matter that has seeped into the interlayer insulating film 3. Although the interlayer insulating film 3 is subjected to a hydrophobic treatment, since the solvent used is an organic solvent, this solvent is able to seep into the interlayer insulating film 3, dissolve the organic matter, and wash the organic matter away without being affected by this hydrophobic treatment. Afterward, the substrate 1 is dried, and the organic solvent or solution containing an organic solvent that is adhering to the surface is removed.
摘要翻译：当通过用清洗液（优选含有表面活性剂的清洗液）清洗剩余的浆料和抛光残渣时，含有表面活性剂的清洗液中的有机物渗入层间绝缘膜3.因此，随后用有机溶剂或含有有机溶剂的溶液，从而洗去已经渗透到层间绝缘膜3中的有机物质。尽管对层间绝缘膜3进行疏水处理，但由于使用的溶剂是有机溶剂，因此溶剂能够渗透到层间绝缘膜3中，溶解有机物质，并且在不受这种疏水处理的影响的情况下洗涤有机物质。之后，干燥基板1，除去附着在表面上的有机溶剂的有机溶剂或溶液。

5. 发明申请

US20060063662A1 Zeolite nano-crystal suspension, zeolite nano-crystal production method, zeolite nano-crystal suspension production method, and zeolite thin film 失效
标题翻译：沸石纳米晶体悬浮液，沸石纳米晶体制备方法，沸石纳米晶体悬浮液制备方法和沸石薄膜
公开(公告)号：US20060063662A1
公开(公告)日：2006-03-23
申请号：US11212844
申请日：2005-08-29
申请人： Nobuhiro Hata , Guoqing Guan , Takenobu Yoshino , Syozo Takada
发明人： Nobuhiro Hata , Guoqing Guan , Takenobu Yoshino , Syozo Takada
IPC分类号： B01J20/28 , B01J29/06 , B01J35/00
CPC分类号： C01B37/02 , C01B39/365
摘要： A zeolite suspension contains MEL-type zeolite nanocrystals as a principal component. A method for the production of MEL-type zeolite nanocrystals includes the steps of aging a synthesized solution comprising TEOS, TBAOH, water and alcohol and subjecting the aged solution to hydrothermal crystallization treatment at a predetermined temperature. A method for the production of a zeolite suspension includes the steps of aging a synthesized solution comprising TEOS, TBAOH, water and alcohol, subjecting the aged solution to hydrothermal crystallization treatment to produce MEL-type zeolite nanocrystals and mixing a composition having a surfactant dissolved in at least one organic solvent or a mixed solvent of alcohol-based organic solvents, amide-based organic solvents and ketone-based organic solvents with a zeolite nano-crystal suspension containing the MEL-type zeolite nanocrystals to produce a zeolite suspension.
摘要翻译：沸石悬浮液含有MEL型沸石纳米晶体作为主要成分。制造MEL型沸石纳米晶体的方法包括使包含TEOS，TBAOH，水和醇的合成溶液老化并使老化溶液在预定温度下进行水热结晶处理的步骤。制备沸石悬浮液的方法包括将包含TEOS，TBAOH，水和醇的合成溶液老化的步骤，将老化溶液进行水热结晶处理以产生MEL型沸石纳米晶体，并将具有表面活性剂溶解的组合物至少一种有机溶剂或醇基有机溶剂，酰胺类有机溶剂和酮基有机溶剂的混合溶剂与含有MEL型沸石纳米晶体的沸石纳米晶体悬浮液，以产生沸石悬浮液。

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