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    • 5. 发明授权
    • Pattern selection for lithographic model calibration
    • 光刻模型校准的图案选择
    • US08694928B2
    • 2014-04-08
    • US12613244
    • 2009-11-05
    • Yu CaoWenjin ShaoJun YeRonaldus Johannes Gljsbertus Goossens
    • Yu CaoWenjin ShaoJun YeRonaldus Johannes Gljsbertus Goossens
    • G06F17/50
    • G06F17/50G03F1/14G03F1/44G03F1/68G03F7/70433G03F7/705G06F17/10G06F17/5009
    • The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.
    • 本发明一般涉及用于计算光刻模型校准的测试图案选择的方法和装置。 根据一些方面,本发明的模式选择算法可以应用于任何现有的候选测试模式池。 根据一些方面,与设计最佳图案相反,本发明自动选择从现有的候选测试图案池中确定最佳模型参数值最有效的测试图案。 根据另外的方面,根据本发明的所选择的一组测试图案能够激发模型配方中的所有已知物理和化学,确保用于测试图案的晶片数据可以将模型校准驱动到最佳参数值 实现了模型公式对预测精度的上限。
    • 6. 发明申请
    • Methods and Systems for Parameter-Sensitive and Orthogonal Gauge Design for Lithography Calibration
    • 用于光刻校准的参数敏感和正交仪表设计方法和系统
    • US20110224956A1
    • 2011-09-15
    • US13128630
    • 2009-11-10
    • Jun YeYu CaoHanying FengWenjin Shao
    • Jun YeYu CaoHanying FengWenjin Shao
    • G06F17/50
    • G06F17/50G03F1/14G03F1/44G03F1/68G03F7/70433G03F7/705G06F17/10G06F17/5009
    • Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process, and which minimize degeneracy between model parameters, and thus maximize pattern coverage for parameter calibration. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
    • 根据本发明的方法提供用于设计用于校准用于模拟过程中的模型的计量模式的计算有效的技术,并且使模型参数之间的简并性最小化,并且因此使参数校准的模式覆盖最大化。 更具体地说,本发明涉及设计规格图案的方法,该图形模式可以用最小数量的量规完成覆盖参数变化,并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。 根据一些方面,根据本发明的方法包括改变模型参数空间的空间(基于CD灵敏度或Delta TCC),然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向,以及 确定最敏感的线宽/间距组合与最佳辅助功能放置,导致在模型参数空间中沿着该方向的最敏感的CD变化。
    • 7. 发明申请
    • PATTERN SELECTION FOR LITHOGRAPHIC MODEL CALIBRATION
    • 图形模型校准的图案选择
    • US20100122225A1
    • 2010-05-13
    • US12613244
    • 2009-11-05
    • Yu CaoWenjin ShaoJun YeRonaldus Johannes Gljsbertus Goossens
    • Yu CaoWenjin ShaoJun YeRonaldus Johannes Gljsbertus Goossens
    • G06F17/50
    • G06F17/50G03F1/14G03F1/44G03F1/68G03F7/70433G03F7/705G06F17/10G06F17/5009
    • The present invention relates generally to methods and apparatuses for test pattern selection for computational lithography model calibration. According to some aspects, the pattern selection algorithms of the present invention can be applied to any existing pool of candidate test patterns. According to some aspects, the present invention automatically selects those test patterns that are most effective in determining the optimal model parameter values from an existing pool of candidate test patterns, as opposed to designing optimal patterns. According to additional aspects, the selected set of test patterns according to the invention is able to excite all the known physics and chemistry in the model formulation, making sure that the wafer data for the test patterns can drive the model calibration to the optimal parameter values that realize the upper bound of prediction accuracy imposed by the model formulation.
    • 本发明一般涉及用于计算光刻模型校准的测试图案选择的方法和装置。 根据一些方面,本发明的模式选择算法可以应用于任何现有的候选测试模式池。 根据一些方面,与设计最佳图案相反,本发明自动选择从现有的候选测试图案池中确定最佳模型参数值最有效的测试图案。 根据另外的方面,根据本发明的所选择的一组测试图案能够激发模型配方中的所有已知物理和化学,确保用于测试图案的晶片数据可以将模型校准驱动到最佳参数值 实现了模型公式对预测精度的上限。
    • 9. 发明授权
    • Information matrix creation and calibration test pattern selection based on computational lithography model parameters
    • 基于计算光刻模型参数的信息矩阵创建和校准测试模式选择
    • US09588439B1
    • 2017-03-07
    • US13332303
    • 2011-12-20
    • Antoine Jean BruguierYu CaoJun YeWenjin Shao
    • Antoine Jean BruguierYu CaoJun YeWenjin Shao
    • G06F17/10G06F7/60G03F7/20G06F17/50
    • G03F7/705G03F7/70516G03F7/70625G06F17/5009
    • Embodiments of the present invention describe methods of selecting a subset of test patterns from an initial larger set of test patterns for calibrating a computational lithography model. An example method comprises: generating an information matrix for the initial larger set of test patterns, wherein the terms of the information matrix comprise one or more identified model parameters that represent a lithographic process response; and, executing a selection algorithm using terms of the information matrix to select the subset of test patterns that effectively determines values of the identified model parameters that contribute significantly in the lithographic process response, wherein the subset of test patterns characteristically represents the initial larger set of test patterns. The selection algorithm explores coverage relationships existing in the initial larger set of test patterns.
    • 本发明的实施例描述了从用于校准计算光刻模型的初始较大组测试图案中选择测试图案子集的方法。 示例性方法包括:生成用于初始较大组的测试模式的信息矩阵,其中信息矩阵的项包括表示光刻过程响应的一个或多个识别的模型参数; 以及使用所述信息矩阵的项来执行选择算法,以选择有效地确定在所述光刻过程响应中有显着贡献的所识别的模型参数的值的测试模式子集,其中,所述测试模式的子集特征性地表示所述初始较大集合 测试模式。 选择算法探讨了初始较大的一组测试模式中存在的覆盖关系。
    • 10. 发明授权
    • Methods and systems for parameter-sensitive and orthogonal gauge design for lithography calibration
    • 用于光刻校准的参数敏感和正交仪表设计的方法和系统
    • US08930172B2
    • 2015-01-06
    • US13128630
    • 2009-11-10
    • Jun YeYu CaoHanying FengWenjin Shao
    • Jun YeYu CaoHanying FengWenjin Shao
    • G06F17/50G03F1/00G03F7/20G03F1/44
    • G06F17/50G03F1/14G03F1/44G03F1/68G03F7/70433G03F7/705G06F17/10G06F17/5009
    • Methods according to the present invention provide computationally efficient techniques for designing gauge patterns for calibrating a model for use in a simulation process, and which minimize degeneracy between model parameters, and thus maximize pattern coverage for parameter calibration. More specifically, the present invention relates to methods of designing gauge patterns that achieve complete coverage of parameter variations with minimum number of gauges and corresponding measurements in the calibration of a lithographic process utilized to image a target design having a plurality of features. According to some aspects, a method according to the invention includes transforming the space of model parametric space (based on CD sensitivity or Delta TCCs), then iteratively identifying the direction that is most orthogonal to existing gauges' CD sensitivities in this new space, and determining most sensitive line width/pitch combination with optimal assist feature placement which leads to most sensitive CD changes along that direction in model parametric space.
    • 根据本发明的方法提供用于设计用于校准用于模拟过程中的模型的计量模式的计算有效的技术,并且使模型参数之间的简并性最小化,并且因此使参数校准的模式覆盖最大化。 更具体地说,本发明涉及设计规格图案的方法,该图形模式可以用最小数量的量规完成覆盖参数变化,并且在用于对具有多个特征的目标设计进行成像的光刻处理的校准中的对应测量。 根据一些方面,根据本发明的方法包括改变模型参数空间的空间(基于CD灵敏度或Delta TCC),然后迭代地识别在该新空间中与现有计量器的CD灵敏度最正交的方向,以及 确定最敏感的线宽/间距组合与最佳辅助功能放置,导致在模型参数空间中沿着该方向的最敏感的CD变化。