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    • 7. 发明授权
    • Silicon solar cell and method of manufacturing the same
    • 硅太阳能电池及其制造方法
    • US09401446B2
    • 2016-07-26
    • US12276592
    • 2008-11-24
    • Junyong AhnGyeayoung KwagJuhwa Cheong
    • Junyong AhnGyeayoung KwagJuhwa Cheong
    • H01L31/00H01L21/00H01L31/068H01L31/18
    • H01L31/0684H01L31/022425H01L31/068H01L31/1804Y02E10/547Y02P70/521
    • A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.
    • 公开了一种硅太阳能电池及其制造方法。 硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底,掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层,在衬底的整个表面上的抗反射层, 上电极穿过抗反射层并连接到发射极层,下电极连接到衬底的下部。 发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。 第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。