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    • 1. 发明申请
    • SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    • 硅太阳能电池及其制造方法
    • US20100108129A1
    • 2010-05-06
    • US12276592
    • 2008-11-24
    • Junyong AhnGyeayoung KwagJuhwa Cheong
    • Junyong AhnGyeayoung KwagJuhwa Cheong
    • H01L31/00H01L21/28
    • H01L31/0684H01L31/022425H01L31/068H01L31/1804Y02E10/547Y02P70/521
    • A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.
    • 公开了一种硅太阳能电池及其制造方法。 硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底,掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层,在衬底的整个表面上的抗反射层, 上电极穿过抗反射层并连接到发射极层,下电极连接到衬底的下部。 发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。 第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。
    • 2. 发明授权
    • Silicon solar cell and method of manufacturing the same
    • 硅太阳能电池及其制造方法
    • US09401446B2
    • 2016-07-26
    • US12276592
    • 2008-11-24
    • Junyong AhnGyeayoung KwagJuhwa Cheong
    • Junyong AhnGyeayoung KwagJuhwa Cheong
    • H01L31/00H01L21/00H01L31/068H01L31/18
    • H01L31/0684H01L31/022425H01L31/068H01L31/1804Y02E10/547Y02P70/521
    • A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.
    • 公开了一种硅太阳能电池及其制造方法。 硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底,掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层,在衬底的整个表面上的抗反射层, 上电极穿过抗反射层并连接到发射极层,下电极连接到衬底的下部。 发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。 第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。
    • 9. 发明授权
    • Solar cell
    • 太阳能电池
    • US09117963B2
    • 2015-08-25
    • US13312028
    • 2011-12-06
    • Sungjin KimTaeyoung KwonSeongeun LeeGyeayoung Kwag
    • Sungjin KimTaeyoung KwonSeongeun LeeGyeayoung Kwag
    • H01L31/042H01L31/18H01L31/0224
    • H01L31/1804H01L31/022433Y02E10/547Y02P70/521
    • A solar cell includes a photoelectric conversion layer and a front electrode on the photoelectric conversion layer. The front electrode includes a bus bar electrode; at least one first finger electrode directly connected to the bus bar electrode; a plurality of connecting electrodes extending from the bus bar electrode and having a width smaller than a width of the bus bar electrode, wherein the plurality of connecting electrodes includes portions that are spaced apart from each other to form a space therebetween; at least one second finger electrode connected to at least one of the plurality of connecting electrodes; and an auxiliary electrode formed at the space between the portions of the plurality of connecting electrodes.
    • 太阳能电池包括光电转换层和光电转换层上的前电极。 前电极包括母线电极; 至少一个第一指状电极直接连接到母线电极; 多个连接电极,从母线电极延伸出来,其宽度小于汇流条电极的宽度,其中多个连接电极包括彼此间隔开并在其间形成空间的部分; 连接到所述多个连接电极中的至少一个的至少一个第二指状电极; 以及形成在所述多个连接电极的所述部分之间的空间处的辅助电极。