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1. 发明授权

US09070706B2 Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device 有权
标题翻译：包括突起III-V族材料层上的栅电极的半导体器件和制造该半导体器件的方法
公开(公告)号：US09070706B2
公开(公告)日：2015-06-30
申请号：US13611127
申请日：2012-09-12
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L29/06 , H01L29/66 , H01L29/778 , H01L29/20
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.
摘要翻译：一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。阻挡层可以包括用于形成量子阱的III-V族材料。

2. 发明授权

US09419094B2 Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device 有权
公开(公告)号：US09419094B2
公开(公告)日：2016-08-16
申请号：US15069148
申请日：2016-03-14
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L21/336 , H01L29/66 , H01L29/12 , H01L29/423
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

3. 发明授权

US09343564B2 Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device 有权
公开(公告)号：US09343564B2
公开(公告)日：2016-05-17
申请号：US14718968
申请日：2015-05-21
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L29/06 , H01L29/778 , H01L29/66 , H01L29/20 , H01L29/78 , H01L21/02 , H01L29/12
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

4. 发明授权

US09324852B2 Semiconductor device including a gate electrode on a protruding group III-V material layer 有权
标题翻译：半导体器件包括在突出的III-V族材料层上的栅电极
公开(公告)号：US09324852B2
公开(公告)日：2016-04-26
申请号：US14623394
申请日：2015-02-16
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L29/06 , H01L29/778 , H01L29/66 , H01L29/20 , H01L29/78 , H01L21/02 , H01L29/12
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.
摘要翻译：一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。阻挡层可以包括用于形成量子阱的III-V族材料。

5. 发明授权

US09306008B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09306008B2
公开(公告)日：2016-04-05
申请号：US14207880
申请日：2014-03-13
申请人： Dong-soo Lee , Myoung-Jae Lee , Seong-ho Cho , Mohammad Rakib Uddin , David Seo , Moon-seung Yang , Sang-moon Lee , Sung-hun Lee , Ji-hyun Hur , Eui-chul Hwang
发明人： Dong-soo Lee , Myoung-Jae Lee , Seong-ho Cho , Mohammad Rakib Uddin , David Seo , Moon-seung Yang , Sang-moon Lee , Sung-hun Lee , Ji-hyun Hur , Eui-chul Hwang
IPC分类号： H01L21/336 , H01L29/20 , H01L21/28 , H01L29/51 , H01L29/66 , H01L21/322 , H01L29/78 , H01L29/24
CPC分类号： H01L29/34 , H01L21/02175 , H01L21/02189 , H01L21/02192 , H01L21/022 , H01L21/02304 , H01L21/28158 , H01L21/28264 , H01L21/322 , H01L21/3228 , H01L29/20 , H01L29/2003 , H01L29/24 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/66522 , H01L29/7851
摘要： The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.
摘要翻译：本公开内容涉及包括III-V族化合物半导体层和电介质层之间的吸氧层的半导体器件以及制造该半导体器件的方法。半导体器件可以包括化合物半导体层; 设置在所述化合物半导体层上的电介质层; 以及置于化合物半导体层和电介质层之间的吸氧层。吸氧层包括具有比化合物半导体层的材料更高的氧亲合力的材料。

6. 发明授权

US08956936B2 Method of forming group III-V material layer, semiconductor device including the group III-V material layer, and method of manufacturing the semiconductor layer 有权
标题翻译：形成III-V族材料层的方法，包括III-V族材料层的半导体器件，以及半导体层的制造方法
公开(公告)号：US08956936B2
公开(公告)日：2015-02-17
申请号：US13568555
申请日：2012-08-07
申请人： Sang-moon Lee , Young-jin Cho
发明人： Sang-moon Lee , Young-jin Cho
IPC分类号： H01L29/78 , H01L29/10 , H01L29/423 , H01L29/778
CPC分类号： H01L29/1033 , H01L29/42376 , H01L29/7787
摘要： A method of forming a group III-V material layer, a semiconductor device including the group III-V material layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate; a group III-V channel layer formed on the substrate; a gate insulating layer formed on the group III-V channel layer; and a gate electrode and source and drain electrodes formed on the gate insulating layer, the source and drain electrodes having intervals from the gate electrode, wherein voids exist between a lower portion of the group III-V channel layer and an insulating layer. The group III-V channel layer may include a binary, ternary, or quaternary material.
摘要翻译：形成III-V族材料层的方法，包括III-V族材料层的半导体器件，以及制造半导体器件的方法。半导体器件包括衬底; 形成在所述基板上的III-V沟道层; 形成在III-V沟道层上的栅极绝缘层; 以及形成在栅极绝缘层上的栅极电极和源极和漏极，源极和漏极具有与栅极电极的间隔，其中在III-V族沟道层的下部和绝缘层之间存在空隙。 III-V族沟道层可以包括二元，三元或四元材料。

7. 发明授权

US09355917B2 Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same 有权
公开(公告)号：US09355917B2
公开(公告)日：2016-05-31
申请号：US14790391
申请日：2015-07-02
申请人： Sang-moon Lee , Young-jin Cho
发明人： Sang-moon Lee , Young-jin Cho
IPC分类号： H01L21/8238 , H01L21/8258 , H01L27/092 , H01L27/15 , H01L29/267 , H01L27/06 , H01L21/02 , H01L21/306 , H01L29/16 , H01L29/20
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/02532 , H01L21/02538 , H01L21/30625 , H01L21/8238 , H01L27/0605 , H01L27/092 , H01L27/0922 , H01L27/15 , H01L29/16 , H01L29/20 , H01L29/267
摘要： A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.

8. 发明授权

US07701876B2 Message transmission method and device in mixture of private network and public network 有权
标题翻译：专网和公网混合的消息传输方式和设备
公开(公告)号：US07701876B2
公开(公告)日：2010-04-20
申请号：US11401944
申请日：2006-04-12
申请人： Soon-churl Shin , Sang-moon Lee , Woo-lin Yang
发明人： Soon-churl Shin , Sang-moon Lee , Woo-lin Yang
IPC分类号： H04L12/28 , H04L12/56
CPC分类号： H04L61/2038 , H04L29/12254 , H04L45/00
摘要： A message transmission method and device are provided. The message transmission method, which is carried out by a node in a mixed network comprised of a private network including at least one node and a public network, includes: checking whether an address of a destination node to receive a message is recorded in a communication node list of the node, when the address of the destination node is not the address of the node; transmitting the message to the destination node recorded, when it is determined that the address of the destination node is recorded in the communication node list; and transmitting the message and the address of the destination node to a node having an address closest to the address of the destination node among the addresses recorded in the communication node list, when the address of the destination node is not recorded in the communication node list.
摘要翻译：提供了一种消息传输方法和装置。由包括至少一个节点和公共网络的专用网络的混合网络中的节点执行的消息传输方法包括：检查接收消息的目的地节点的地址是否被记录在通信中节点的节点列表，当目标节点的地址不是节点的地址时; 当确定所述目的地节点的地址被记录在所述通信节点列表中时，将所述消息发送到所记录的目的地节点; 并且当目的地节点的地址未被记录在通信节点列表中时，将记录在通信节点列表中的地址中的目的地节点的消息和地址发送到具有最接近目的节点地址的地址的节点。

9. 发明申请

US20080123699A1 Pump laser integrated vertical external cavity surface emitting laser 失效
标题翻译：泵激光器集成垂直外腔表面发射激光器
公开(公告)号：US20080123699A1
公开(公告)日：2008-05-29
申请号：US11980350
申请日：2007-10-31
申请人： Sang-moon Lee , Jun-ho Lee
发明人： Sang-moon Lee , Jun-ho Lee
IPC分类号： H01S5/34
CPC分类号： H01S5/041 , H01S5/0071 , H01S5/026 , H01S5/141 , H01S5/183 , H01S5/4056
摘要： Provided is a pump laser integrated vertical external cavity surface emitting laser (VECSEL). The VECSEL may include a surface emitting laser unit including a first active layer having a multiple quantum well structure emitting light having a first wavelength, a reflective layer may be formed on the first active layer, and an external mirror may be disposed opposite to a lower surface of the first active layer and defining a cavity resonator together with the reflective layer. A pump laser unit may be formed on a part of the surface emitting laser unit and may have a perpendicular light emissive surface emitting a pump beam having a second wavelength for exciting the first active layer. A beam reflector may be formed on the light emissive surface of the pump laser unit and reflecta pump beam that is incident from the pump laser unit to the first active layer.
摘要翻译：提供了一种泵浦激光器集成的垂直外腔表面发射激光器（VECSEL）。 VECSEL可以包括表面发射激光器单元，其包括具有发射具有第一波长的光的多重量子阱结构的第一有源层，反射层可以形成在第一有源层上，并且外部反射镜可以布置成与下部第一有源层的表面并与反射层一起限定空腔谐振器。泵激光单元可以形成在表面发射激光器单元的一部分上，并且可以具有发射具有用于激发第一有源层的第二波长的泵浦光束的垂直光发射表面。光束反射器可以形成在泵激光单元的发光表面上，并且反射从泵激光单元入射到第一有源层的泵浦光束。

10. 发明授权

US09425104B2 Complementary metal oxide semiconductor device and method of manufacturing the same 有权
标题翻译：互补金属氧化物半导体器件及其制造方法
公开(公告)号：US09425104B2
公开(公告)日：2016-08-23
申请号：US14259569
申请日：2014-04-23
申请人： Moon-seung Yang , Mohammad Rakib Uddin , Myoung-jae Lee , Sang-moon Lee , Sung-hun Lee , Seong-ho Cho
发明人： Moon-seung Yang , Mohammad Rakib Uddin , Myoung-jae Lee , Sang-moon Lee , Sung-hun Lee , Seong-ho Cho
IPC分类号： H01L21/70 , H01L21/8238 , H01L21/8252 , H01L21/8258 , H01L27/06 , H01L27/092
CPC分类号： H01L21/8238 , H01L21/8252 , H01L21/8258 , H01L27/0605 , H01L27/092
摘要： Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.
摘要翻译：提供互补金属氧化物半导体（CMOS）器件及其制造方法。在CMOS器件中，在硅衬底上设置缓冲层，并且在缓冲层上设置包括III-V族材料的第一层。包含IV族材料的第二层设置在缓冲层或硅衬底上，同时与第一层间隔开。

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