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1. 发明授权

US06930356B2 Power semiconductor device having high breakdown voltage, low on-resistance, and small switching loss and method of forming the same 有权
标题翻译：具有高击穿电压，低导通电阻和小开关损耗的功率半导体器件及其形成方法
公开(公告)号：US06930356B2
公开(公告)日：2005-08-16
申请号：US10464059
申请日：2003-06-17
申请人： Young-chul Choi , Tae-hoon Kim , Ho-cheol Jang , Chong-man Yun
发明人： Young-chul Choi , Tae-hoon Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L29/06 , H01L29/08 , H01L29/10 , H01L29/739 , H01L29/78 , H01L31/119
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/7395
摘要： In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.
摘要翻译：根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。第一漂移区域具有比半导体衬底更低的杂质浓度。第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。第二导电类型的多个条形体区域形成在第二漂移区域的上部。第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分地区。

2. 发明授权

US07276405B2 Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same 有权
标题翻译：具有高击穿电压，低导通电阻和小开关损耗的功率半导体器件及其形成方法
公开(公告)号：US07276405B2
公开(公告)日：2007-10-02
申请号：US11182578
申请日：2005-07-14
申请人： Young-chul Choi , Tae-hoon Kim , Ho-cheol Jang , Chong-man Yun
发明人： Young-chul Choi , Tae-hoon Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/7395
摘要： In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.
摘要翻译：根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。第一漂移区域具有比半导体衬底更低的杂质浓度。第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。第二导电类型的多个条形体区域形成在第二漂移区域的上部。第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分地区。

3. 发明申请

US20050263818A1 Power semiconductor device having high breakdown voltage, low on-resistance and small switching loss and method of forming the same 有权
标题翻译：具有高击穿电压，低导通电阻和小开关损耗的功率半导体器件及其形成方法
公开(公告)号：US20050263818A1
公开(公告)日：2005-12-01
申请号：US11182578
申请日：2005-07-14
申请人： Young-chul Choi , Tae-hoon Kim , Ho-cheol Jang , Chong-man Yun
发明人： Young-chul Choi , Tae-hoon Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L29/06 , H01L29/08 , H01L29/10 , H01L29/739 , H01L29/78 , H01L29/94
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/7395
摘要： In accordance with one embodiment of the present invention, a power semiconductor device includes a first drift region of a first conductivity type extending over a semiconductor substrate. The first drift region has a lower impurity concentration than the semiconductor substrate. A second drift region of the first conductivity type extends over the first drift region, and has a higher impurity concentration than the first drift region. A plurality of stripe-shaped body regions of a second conductivity type are formed in an upper portion of the second drift region. A third region of the first conductivity type is formed in an upper portion of each body region so as to form a channel region in each body region between the third region and the second drift region. A gate electrode laterally extends over but is insulated from: (i) the channel region in each body region, (ii) a surface area of the second drift region between adjacent stripes of body regions, and (iii) a surface portion of each source region.
摘要翻译：根据本发明的一个实施例，功率半导体器件包括在半导体衬底上延伸的第一导电类型的第一漂移区。第一漂移区域具有比半导体衬底更低的杂质浓度。第一导电类型的第二漂移区域在第一漂移区域上延伸，并且具有比第一漂移区域更高的杂质浓度。第二导电类型的多个条形体区域形成在第二漂移区域的上部。第一导电类型的第三区域形成在每个体区的上部，以便在第三区域和第二漂移区域之间的每个体区域中形成沟道区域。栅电极横向延伸，但与以下绝缘：（i）每个体区中的沟道区，（ii）相邻的体区之间的第二漂移区的表面积，和（iii）每个源的表面部分地区。

4. 发明授权

US06344676B1 Power semiconductor device having low on-resistance and high breakdown voltage 有权
标题翻译：具有低导通电阻和高击穿电压的功率半导体器件
公开(公告)号：US06344676B1
公开(公告)日：2002-02-05
申请号：US09533824
申请日：2000-03-24
申请人： Chong-man Yun , Tae-hoon Kim , Ho-cheol Jang , Young-chull Choi
发明人： Chong-man Yun , Tae-hoon Kim , Ho-cheol Jang , Young-chull Choi
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/0847 , H01L29/1095 , H01L29/7395
摘要： A power semiconductor device having low on-resistance and a high breakdown voltage is disclosed. The power semiconductor device can be a high power MOS transistor or an insulation gate bipolar transistor. The power semiconductor device has unit cells formed in parallel body region strips. A highly-doped drift layer of the same conductivity type as that of a drift region is provided between adjacent body region strips in a unit cell. Both ends of each of the body region strips of the unit cell are connected to a single frame region. This prevents a depletion region of a spherical or cylindrical type from being formed on an edge of the body region, and in so doing, increases a breakdown voltage of the device.
摘要翻译：公开了具有低导通电阻和高击穿电压的功率半导体器件。功率半导体器件可以是高功率MOS晶体管或绝缘栅双极晶体管。功率半导体器件具有以平行体区带形成的单元电池。在单元电池中的相邻体区带之间设置与漂移区相同导电类型的高掺杂漂移层。单元电池的每个体区带的两端连接到单个框架区域。这防止了在体区域的边缘上形成球形或圆柱形的耗尽区，并且这样做增加了器件的击穿电压。

5. 发明授权

US06664595B1 Power MOSFET having low on-resistance and high ruggedness 有权
标题翻译：功率MOSFET具有低导通电阻和高耐久性
公开(公告)号：US06664595B1
公开(公告)日：2003-12-16
申请号：US09533816
申请日：2000-03-24
申请人： Chong-man Yun , Tae-hoon Kim
发明人： Chong-man Yun , Tae-hoon Kim
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0696 , H01L29/086 , H01L29/0869 , H01L29/66712
摘要： A power MOSFET is provided. In this power MOSFET, a drift region is formed on a drain region having the same conductivity type as that of the drain region using a semiconductor substrate of a first conductivity type. A gate electrode is formed on the drift region, having a plurality of openings spaced apart from each other by a predetermined distance. The plurality of openings partially expose the drift region, and a gate insulating layer is interposed between the gate electrode and the drift region. A body region of a second conductivity type opposite to the first conductivity type is formed on a predetermined upper region of the drift region and extends from the opening to have a side overlapped by the gate electrode. A channel in the portion of the body region overlapped by the gate electrode is not formed and is adjacent to at least two facing sides of the opening. A source region is formed in the body region, including a first source region shaped in the form of a strip, the first source region contacting a portion where a channel is formed, and a second source region connecting the first source regions facing to each other. Also, a source electrode is electrically connected to the source region, and a drain electrode is electrically connected to the drain region.
摘要翻译：提供功率MOSFET。在该功率MOSFET中，使用第一导电类型的半导体衬底，在具有与漏区相同的导电类型的漏区上形成漂移区。栅电极形成在漂移区上，具有彼此隔开预定距离的多个开口。多个开口部分地暴露漂移区域，并且栅极绝缘层插入在栅极电极和漂移区域之间。在漂移区域的预定的上部区域上形成与第一导电类型相反的第二导电类型的体区，并且从开口延伸以与栅电极重叠。与栅电极重叠的体区的部分中的通道不形成并且与开口的至少两个相对的侧相邻。源区域形成在主体区域中，包括形成为带状的第一源极区域，与形成沟道的部分接触的第一源极区域和连接彼此面对的第一源极区域的第二源极区域。另外，源电极与源区电连接，漏电极与漏极区电连接。

6. 发明申请

US20150364334A1 METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE 有权
标题翻译：形成图案的方法和制造集成电路装置的方法
公开(公告)号：US20150364334A1
公开(公告)日：2015-12-17
申请号：US14695047
申请日：2015-04-24
申请人： Yool Kang , Dong-won Kim , Ju-young Kim , Tae-hoon Kim , Hye-ji Lee , Su-min Park , Hyung-rae Lee
发明人： Yool Kang , Dong-won Kim , Ju-young Kim , Tae-hoon Kim , Hye-ji Lee , Su-min Park , Hyung-rae Lee
IPC分类号： H01L21/308 , H01L21/311 , H01L21/02 , H01L21/027
CPC分类号： H01L21/3086 , H01L21/0273 , H01L21/0332 , H01L21/0337 , H01L21/3081 , H01L21/31144 , H01L21/32139 , H01L21/76816 , H01L27/10814 , H01L27/10855 , H01L27/10885 , H01L27/10888
摘要： Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.
摘要翻译：提供形成图案的方法和制造集成电路器件的方法。在形成图案的方法中，形成具有暴露目标层的第一区域的第一开口的光致抗蚀剂图案。在限定第一开口的光致抗蚀剂图案的侧壁处形成覆盖层。通过将酸从封盖层扩散到光致抗蚀剂图案的内部，在第一开口周围形成不溶性区域。通过去除与第一开口间隔开的可溶性区域形成暴露目标层的第二区域的第二开口，其中插入不溶性区域。使用不溶性区域作为蚀刻掩模蚀刻靶层。

7. 发明授权

US07546656B2 Method of installing prefabricated, segment concrete filled tube members 有权
标题翻译：安装预制，段混凝土填充管构件的方法
公开(公告)号：US07546656B2
公开(公告)日：2009-06-16
申请号：US11430860
申请日：2006-05-10
申请人： Seong-woon Kim , Young-jin Kim , In-gyu Kim , Byeong-moo Jin , Tae-hoon Kim , Hyang-wook Ma , Yun-seok Lee
发明人： Seong-woon Kim , Young-jin Kim , In-gyu Kim , Byeong-moo Jin , Tae-hoon Kim , Hyang-wook Ma , Yun-seok Lee
IPC分类号： E01D21/00 , E01D22/00
CPC分类号： E04C3/34 , E01D2/00 , E01D19/02 , E01D21/00 , E01D2101/268 , E01D2101/285 , E01D2101/40 , E04C3/22 , E04C3/26 , E04C3/44
摘要： A method of installing segmental concrete filled tube members. The prefabricated segmental concrete filled tube member has a hollow pipe filled therein with concrete, and a connection flange shaped in a ring radially extending from the peripheries of both ends of the pipe, wherein the segmental concrete filled tube member is integrally connected with another adjacent segmental concrete filled tube member by the connection flange.
摘要翻译：安装节段混凝土填充管构件的方法。预制的节段混凝土填充管构件具有填充有混凝土的中空管，以及形成为从管的两端的周边径向延伸的环的连接凸缘，其中，所述节段混凝土填充的管构件与另一相邻节段混凝土填充管构件通过连接法兰。

8. 发明申请

US20080216197A1 Polypeptide Having Function Related to Pyridoxine Biosynthesis, Polynucleotide Coding the Polypeptide, and Those Use 审中-公开
标题翻译：多肽具有与吡哆醇生物合成有关的功能，编码多肽的多核苷酸，以及这些用途
公开(公告)号：US20080216197A1
公开(公告)日：2008-09-04
申请号：US11815314
申请日：2006-02-01
申请人： Dong-hee Lee , In-taek Hwang , Kwang-yun Cho , Tae-hoon Kim
发明人： Dong-hee Lee , In-taek Hwang , Kwang-yun Cho , Tae-hoon Kim
IPC分类号： C12N15/82 , C07K16/00 , C07H21/04 , C12Q1/00 , C12N15/00 , C12N5/00
CPC分类号： C07K14/415 , C12N15/8243 , C12N15/8261 , Y02A40/146
摘要： Disclosed herein are a polypeptide having a pyridoxine biosynthesis-related function, a polypeptide encoding the same, and uses thereof.
摘要翻译：本文公开了具有吡哆醇生物合成相关功能的多肽，编码该多肽的多肽及其用途。

9. 发明申请

US20070052001A1 Nonvolatile semiconductor memory device and method of fabricating the same 审中-公开
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20070052001A1
公开(公告)日：2007-03-08
申请号：US11502426
申请日：2006-08-11
申请人： Seung-eon Ahn , Jung-bin Yun , In-kyeong Yoo , Dong-chul Kim , Tae-hoon Kim
发明人： Seung-eon Ahn , Jung-bin Yun , In-kyeong Yoo , Dong-chul Kim , Tae-hoon Kim
IPC分类号： H01L29/76
CPC分类号： H01L45/04 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/1641
摘要： A nonvolatile semiconductor memory device and a method of fabricating the same are provided. The nonvolatile memory device may include a switching device and a storage node connected to the switching device. The storage node may comprise a lower electrode, a data storing layer, and an upper electrode. The data storing layer may include a first region where a current path is formed at a first voltage, and a second region surrounding the first region where a current path is formed at a second voltage, greater than the first voltage. The first region may be positioned to contact the upper electrode and the lower electrode.
摘要翻译：提供一种非易失性半导体存储器件及其制造方法。非易失性存储器件可以包括连接到开关器件的开关器件和存储节点。存储节点可以包括下电极，数据存储层和上电极。数据存储层可以包括在第一电压处形成电流路径的第一区域和围绕第一区域的第二区域，其中电流路径形成在大于第一电压的第二电压处。第一区域可以被定位成接触上电极和下电极。

10. 发明申请

US20060241277A1 Method for preparing imide substituted copolymer resin 审中-公开
标题翻译：制备酰亚胺取代共聚物树脂的方法
公开(公告)号：US20060241277A1
公开(公告)日：2006-10-26
申请号：US11324953
申请日：2006-01-04
申请人： Moon-kyoon Chun , Tae-hoon Kim , Chan-hong Lee , Jae-il Roh
发明人： Moon-kyoon Chun , Tae-hoon Kim , Chan-hong Lee , Jae-il Roh
IPC分类号： C08G73/00
CPC分类号： C08F8/32 , C08F212/00
摘要： The present invention relates to a method for preparing an imide substituted copolymer resin comprising the steps of: copolymerization by feeding a mixture of an aromatic vinyl monomer and a vinyl cyanide monomer, a mixture of an unsaturated dicarboxylic anhydride monomer and a solvent, an initiator and a chain transfer agent at once to a copolymerization reactor; and imide substitution by continuously feeding the resultant polymerization solution to an imide substitution reactor while continuously feeding a primary amine. The preparation method according to the present invention is capable of continuously preparing an imide substituted copolymer resin having superior heat resistance and excellent fluidity and improving mechanical property and compatibility with ABS resin by inhibiting formation of aromatic vinyl homopolymer.
摘要翻译：本发明涉及一种制备酰亚胺取代共聚树脂的方法，包括以下步骤：通过将芳族乙烯基单体和乙烯基氰单体的混合物，不饱和二羧酸酐单体和溶剂的混合物，引发剂和一个链转移剂一次到共聚反应器; 并通过将所得聚合溶液连续供给到酰亚胺取代反应器中而连续进料伯胺进行酰亚胺取代。根据本发明的制备方法能够通过抑制芳族乙烯基均聚物的形成，连续地制备具有优异的耐热性和优异的流动性并提高机械性能和与ABS树脂的相容性的酰亚胺取代的共聚物树脂。

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