专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07733691B2 Memory device including thermal conductor located between programmable volumes 有权
标题翻译：存储器件包括位于可编程体积之间的导热体
公开(公告)号：US07733691B2
公开(公告)日：2010-06-08
申请号：US11959502
申请日：2007-12-19
申请人： Young-Tae Kim , Myung-Jin Park , Keun-Ho Lee
发明人： Young-Tae Kim , Myung-Jin Park , Keun-Ho Lee
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C5/025 , G11C13/0004 , G11C2013/008 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/128 , H01L45/144
摘要： In one aspect, a memory device is provided which includes a plurality of bit lines extending in a first direction, a plurality of word lines extending in a second direction, an array of programmable volumes electrically connected between the bit lines and word lines, and thermally conductive striped patterns located between the programmable volumes of the array and extending in at least one of the first and second directions.
摘要翻译：一方面，提供了一种存储器件，其包括沿第一方向延伸的多个位线，沿第二方向延伸的多条字线，电连接在位线和字线之间的可编程体积阵列，以及热导电条纹图案位于阵列的可编程体积之间并且在第一和第二方向中的至少一个方向上延伸。

2. 发明申请

US20090176329A1 Phase-change memory device and method of manufacturing the same 失效
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20090176329A1
公开(公告)日：2009-07-09
申请号：US12320869
申请日：2009-02-06
申请人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
摘要翻译：在形成相变存储器件的方法中，可变电阻部件可以形成为具有接触区域的半导体衬底，并且第一电极可以形成为接触可变电阻部件的第一部分并被电连接到接触区域。第二电极可以形成为接触可变电阻部件的第二部分。

3. 发明授权

US07514704B2 Phase-change memory device and method of manufacturing the same 有权
公开(公告)号：US07514704B2
公开(公告)日：2009-04-07
申请号：US11028202
申请日：2005-01-04
申请人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
IPC分类号： H01L29/02 , H01L47/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.

4. 发明申请

US20050174861A1 Phase-change memory device and method of manufacturing the same 有权
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20050174861A1
公开(公告)日：2005-08-11
申请号：US11028202
申请日：2005-01-04
申请人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
IPC分类号： H01L27/115 , G11C29/00 , H01L27/10 , H01L27/24 , H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
摘要翻译：在形成相变存储器件的方法中，可变电阻部件可以形成为具有接触区域的半导体衬底，并且第一电极可以形成为接触可变电阻部件的第一部分并被电连接到接触区域。第二电极可以形成为接触可变电阻部件的第二部分。

5. 发明授权

US07910398B2 Phase-change memory device and method of manufacturing the same 失效
标题翻译：相变存储器件及其制造方法
公开(公告)号：US07910398B2
公开(公告)日：2011-03-22
申请号：US12320869
申请日：2009-02-06
申请人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人： Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
IPC分类号： H01L21/06
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要： In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
摘要翻译：在形成相变存储器件的方法中，可变电阻部件可以形成为具有接触区域的半导体衬底，并且第一电极可以形成为接触可变电阻部件的第一部分并被电连接到接触区域。第二电极可以形成为接触可变电阻部件的第二部分。

6. 发明申请

US20100211172A1 Implantable Device For Communicating With Biological Tissue 审中-公开
标题翻译：用于与生物组织通信的植入式装置
公开(公告)号：US20100211172A1
公开(公告)日：2010-08-19
申请号：US12593723
申请日：2008-04-02
申请人： Ravi Bellamkonda , Dinal Andreasen , Isaac Clements , Young-Tae Kim
发明人： Ravi Bellamkonda , Dinal Andreasen , Isaac Clements , Young-Tae Kim
IPC分类号： A61F2/02 , A61N1/00
CPC分类号： A61N1/0556 , A61B5/0031 , A61B5/04001 , A61B5/4041 , A61B5/4047 , A61B5/4052 , A61B5/4519 , A61B5/686 , A61L2400/18 , A61L2430/32 , A61N1/326 , A61N1/36042
摘要： Provided are implantable devices for communicating with biological tissue and methods and systems for using the devices. For example, the devices are implanted in a subject and used to communicate with regenerated neural tissue.
摘要翻译：提供了用于与生物组织通信的可植入装置以及用于使用装置的方法和系统。例如，将装置植入受试者中并用于与再生的神经组织进行通信。

7. 发明申请

US20090097668A1 Method and apparatus for canceling non-uniform radiation patterns in array speaker system 有权
标题翻译：用于消除阵列扬声器系统中不均匀辐射图案的方法和装置
公开(公告)号：US20090097668A1
公开(公告)日：2009-04-16
申请号：US12076434
申请日：2008-03-18
申请人： Young-Tae Kim , Jung-ho Kim , Seng-chul Ko
发明人： Young-Tae Kim , Jung-ho Kim , Seng-chul Ko
IPC分类号： G10K11/16
CPC分类号： H04R3/12
摘要： An array speaker system canceling non-uniform radiation patterns and a method for implementing the same are provided. The method for canceling non-uniform radiation patterns includes predicting radiation patterns in an array speaker with respect to input signals, generating cancellation signals with respect to at least one region corresponding to non-uniform radiation patterns of the predicted radiation patterns, synthesizing the input signals and the cancellation signals, and outputting the synthesized signals to the array speaker. Sound signals from which non-uniform radiation patterns having distorted sound are cancelled such that a stable sound field having uniform radiation characteristics may be obtained and provided to a listener.
摘要翻译：提供消除非均匀辐射图案的阵列扬声器系统及其实现方法。用于消除非均匀辐射图案的方法包括相对于输入信号预测阵列扬声器中的辐射图案，相对于对应于预测辐射图案的非均匀辐射图案的至少一个区域产生抵消信号，合成输入信号和消除信号，并将合成信号输出到阵列扬声器。消除具有失真声音的不均匀辐射图形的声音信号，从而可以获得具有均匀辐射特性的稳定声场并提供给收听者。

8. 发明授权

US11417300B2 Saliva collector for brass musical instrument 有权
公开(公告)号：US11417300B2
公开(公告)日：2022-08-16
申请号：US16772728
申请日：2018-12-13
申请人： Young-Tae Kim
发明人： Young-Tae Kim
IPC分类号： G10D7/10 , G10D9/00
摘要： The present invention relates to a saliva collector which comprises: a container which provides a space to accommodate at least one absorber; and a head wherein one end is detachably disposed on at least one part of a musical instrument and another end is detachably disposed so as to communicate with at least one part of a side of the container.

9. 发明授权

US09354301B2 Method and apparatus for ultrasound diagnosis that reduces interference and restores missed signals 有权
标题翻译：用于超声诊断的方法和装置，其减少干扰并恢复遗漏信号
公开(公告)号：US09354301B2
公开(公告)日：2016-05-31
申请号：US13493464
申请日：2012-06-11
申请人： Hwan Shim , Young-Tae Kim
发明人： Hwan Shim , Young-Tae Kim
IPC分类号： A61B8/00 , G01S7/52 , G01S15/89
CPC分类号： G01S7/52077 , G01S7/52023 , G01S7/52026 , G01S15/8979
摘要： A method and apparatus for ultrasound diagnosis that reduces interference and restores missed signals, is provided. The method of ultrasound diagnosis includes operations of receiving a Doppler signal having at least one gap; respectively obtaining model parameter sets of first and second Doppler signals by using Doppler signal periods before and after a start of the at least one gap; synthesizing first and second Doppler information by respectively using the model parameter sets of the first and second Doppler signals; and generating Doppler information for the at least one gap by cross-fading the synthesized first and second Doppler information. The apparatus includes a transformer for transforming received I and Q signals into stereo audio signals using a Hilbert transform; and a source separator which removes interference from the stereo audio signals by performing source separation on the stereo audio signals.
摘要翻译：提供了一种减少干扰并恢复丢失信号的超声诊断方法和装置。超声诊断方法包括接收具有至少一个间隙的多普勒信号的操作; 分别通过在所述至少一个间隙开始之前和之后的多普勒信号周期获得第一和第二多普勒信号的模型参数集合; 通过分别使用第一和第二多普勒信号的模型参数集合合成第一和第二多普勒信息; 以及通过使合成的第一和第二多普勒信息交叉衰落来产生用于所述至少一个间隙的多普勒信息。该装置包括用于使用希尔伯特变换将接收的I和Q信号变换成立体声音频信号的变压器; 以及源分离器，其通过对立体声音频信号执行源分离来消除来自立体声音频信号的干扰。

10. 发明授权

US07067837B2 Phase-change memory devices 失效
标题翻译：相变存储器件
公开(公告)号：US07067837B2
公开(公告)日：2006-06-27
申请号：US10814670
申请日：2004-03-31
申请人： Young-Nam Hwang , Young-Tae Kim
发明人： Young-Nam Hwang , Young-Tae Kim
IPC分类号： H01L47/00 , H01L29/04
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/1683
摘要： Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration.
摘要翻译：相变存储器件包括相变材料层和其间具有接触区域的第一电极。接触区域延伸到第一电极的凹部以提供电流密度浓度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式