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    • 1. 发明授权
    • Nonvolatile memory device using variable resistive element
    • 使用可变电阻元件的非易失性存储器件
    • US08050079B2
    • 2011-11-01
    • US12577888
    • 2009-10-13
    • Young-Sun SongHo-Jung KimSang-Beom Kang
    • Young-Sun SongHo-Jung KimSang-Beom Kang
    • G11C11/00G11C11/36
    • G11C7/18G11C5/147G11C8/10G11C13/0004G11C13/0026G11C2207/002
    • A nonvolatile memory device, using a resistance material, includes a memory cell array having nonvolatile memory cells arranged in a matrix, multiple bit lines, a column selection circuit and column drivers. The bit lines are coupled to columns of the nonvolatile memory cells in the memory cell array. The column selection circuit selects at least one bit line in response to column selection signals. Each column driver supplies a column selection signal, and includes a first charge unit that charges an output port of the column driver to a first voltage level in response to a first charge signal, a second charge unit that charges the output port of the column driver to a second voltage level from the first voltage level in response to a second charge signal, and a current controller that controls a current path from the second charge unit to the first charge unit.
    • 使用电阻材料的非易失性存储器件包括具有排列成矩阵的非易失性存储单元,多位线,列选择电路和列驱动器的存储单元阵列。 位线耦合到存储单元阵列中的非易失性存储单元的列。 列选择电路响应于列选择信号选择至少一个位线。 每列驱动器提供列选择信号,并且包括第一充电单元,其响应于第一充电信号而将列驱动器的输出端口充电到第一电压电平;第二充电单元,对列驱动器的输出端口进行充电 响应于第二充电信号而从第一电压电平到第二电压电平;以及电流控制器,其控制从第二充电单元到第一充电单元的电流路径。
    • 2. 发明申请
    • NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT
    • 使用可变电阻元件的非易失性存储器件
    • US20100091552A1
    • 2010-04-15
    • US12577888
    • 2009-10-13
    • Young-Sun SongHo-Jung KimSang-Beom Kang
    • Young-Sun SongHo-Jung KimSang-Beom Kang
    • G11C11/00G11C8/08G11C7/00
    • G11C7/18G11C5/147G11C8/10G11C13/0004G11C13/0026G11C2207/002
    • A nonvolatile memory device, using a resistance material, includes a memory cell array having nonvolatile memory cells arranged in a matrix, multiple bit lines, a column selection circuit and column drivers. The bit lines are coupled to columns of the nonvolatile memory cells in the memory cell array. The column selection circuit selects at least one bit line in response to column selection signals. Each column driver supplies a column selection signal, and includes a first charge unit that charges an output port of the column driver to a first voltage level in response to a first charge signal, a second charge unit that charges the output port of the column driver to a second voltage level from the first voltage level in response to a second charge signal, and a current controller that controls a current path from the second charge unit to the first charge unit.
    • 使用电阻材料的非易失性存储器件包括具有排列成矩阵的非易失性存储单元,多位线,列选择电路和列驱动器的存储单元阵列。 位线耦合到存储单元阵列中的非易失性存储单元的列。 列选择电路响应于列选择信号选择至少一个位线。 每列驱动器提供列选择信号,并且包括第一充电单元,其响应于第一充电信号而将列驱动器的输出端口充电到第一电压电平;第二充电单元,对列驱动器的输出端口进行充电 响应于第二充电信号而从第一电压电平到第二电压电平;以及电流控制器,其控制从第二充电单元到第一充电单元的电流路径。