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1. 发明申请

US20100219340A1 APPARATUS AND METHOD FOR MEASURING SEMICONDUCTOR DEVICE 有权
标题翻译：测量半导体器件的装置和方法
公开(公告)号：US20100219340A1
公开(公告)日：2010-09-02
申请号：US12713261
申请日：2010-02-26
申请人： Young-Seok KIM , Jong-Sun PEAK , Young-Nam KIM , Hyung-Suk CHO , Sun-Jin KANG , Bu-Dl YOO
发明人： Young-Seok KIM , Jong-Sun PEAK , Young-Nam KIM , Hyung-Suk CHO , Sun-Jin KANG , Bu-Dl YOO
IPC分类号： G01N23/20
CPC分类号： H01L22/20 , H01L22/12
摘要： An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.
摘要翻译：提供了一种用于测量半导体器件的设备。该装置包括：射束发射器，被配置为将电子束照射到具有通过蚀刻或显影形成的临界尺寸（CD）区域和连接到CD区域的法线区域构成的整个区域的样品上;以及分析器电连接到射束发射器，并且被配置为在从由样品表面反射的电子束获得反射率之后，选择和设置发生CD区域和法线区域之间的反射率差的区域的波长范围，到电子束的波长。还提供了使用测量装置测量半导体器件的方法。因此，可以使半导体器件的厚度和特性的反射率变化最小化，并且设定波长范围来监视特定波长，从而精确地测量和分析半导体器件的测量部分的CD值。

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