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1. 发明申请

US20100054761A1 Monolithic coherent optical detectors 审中-公开
标题翻译：单片相干光检测器
公开(公告)号：US20100054761A1
公开(公告)日：2010-03-04
申请号：US12229983
申请日：2008-08-28
申请人： Young-Kai Chen , Christopher Richard Doerr , Vincent Etienne Houtsma , Ting-Chen Hu , Andreas Bertold Leven , David Thomas Neilson , Nils Guenter Weimann , Liming Zhang
发明人： Young-Kai Chen , Christopher Richard Doerr , Vincent Etienne Houtsma , Ting-Chen Hu , Andreas Bertold Leven , David Thomas Neilson , Nils Guenter Weimann , Liming Zhang
IPC分类号： H04B10/06
CPC分类号： H04B10/611 , H04B10/60 , H04B10/614
摘要： An optical receiver has a monolithically integrated electrical and optical circuit that includes a substrate with a planar surface. Along the planar surface, the monolithically integrated electrical and optical circuit has an optical hybrid, one or more variable optical attenuators, and photodetectors. The optical hybrid is connected to receive light beams, to interfere light of said received light beams with a plurality of relative phases and to output said interfered light via optical outputs thereof. Each of the one or more variable optical attenuators connects between a corresponding one of the optical outputs and a corresponding one of the photodetectors.
摘要翻译：光学接收器具有包括具有平坦表面的基板的单片集成电路和光学电路。沿着平坦表面，单片集成电光电路具有光学混合，一个或多个可变光衰减器和光电探测器。光混合器被连接以接收光束，以用多个相对相位干涉所述接收的光束的光，并通过其光输出来输出所述被干扰的光。所述一个或多个可变光衰减器中的每一个连接在所述光输出中的相应一个和所述光电检测器中的对应的一个。

2. 发明授权

US07471855B2 Monlithically coupled waveguide and phototransistor 有权
标题翻译：单片耦合波导和光电晶体管
公开(公告)号：US07471855B2
公开(公告)日：2008-12-30
申请号：US11180122
申请日：2005-07-13
申请人： Young-Kai Chen , Vincent Etienne Houtsma , Andreas Bertold Leven , Nils Guenter Weimann
发明人： Young-Kai Chen , Vincent Etienne Houtsma , Andreas Bertold Leven , Nils Guenter Weimann
IPC分类号： G02B6/12
CPC分类号： G02B6/4204 , G02B6/30
摘要： An optical integrated circuit comprises a semiconductor body, a semiconductor optical waveguide located on the body, and a bipolar phototransistor located on and optically coupled to the waveguide. In a preferred embodiment, the base region of the transistor is configured to absorb radiation propagating in the waveguide, but the emitter and collector regions are both configured not to absorb the propagating radiation. In a further preferred embodiment, the waveguide is configured to guide the radiation along a propagation axis therein, and the transistor makes an elongated footprint along the waveguide, the footprint being elongated along the direction of the propagation axis. In another preferred embodiment, the footprint is at least three times longer along the propagation axis than along a direction perpendicular thereto.
摘要翻译：光学集成电路包括半导体本体，位于本体上的半导体光波导和位于光学耦合到波导的双极光电晶体管。在优选实施例中，晶体管的基极区被配置为吸收在波导中传播的辐射，但是发射极和集电极区域均被配置为不吸收传播辐射。在另一优选实施例中，波导被配置为沿其中的传播轴引导辐射，并且晶体管沿着波导形成细长的占地面积，所述覆盖区沿着传播轴线的方向延伸。在另一个优选实施例中，沿着传播轴线的距离比垂直于其的方向至少长三倍。

3. 发明申请

US20090146179A1 Planar arrays of photodiodes 审中-公开
标题翻译：平面阵列的光电二极管
公开(公告)号：US20090146179A1
公开(公告)日：2009-06-11
申请号：US12004597
申请日：2007-12-21
申请人： Young-Kai Chen , Vincent Etienne Houtsma , Andreas Bertold Leven , Nils Guenter Weimann
发明人： Young-Kai Chen , Vincent Etienne Houtsma , Andreas Bertold Leven , Nils Guenter Weimann
IPC分类号： H01L31/105 , H04B10/04
CPC分类号： H01L27/1446 , H01L31/035281 , Y02E10/50
摘要： An apparatus includes a light detector. The light detector includes a substrate with a planar surface and an array of photodiodes located along the planar surface. Each photodiode has a sequence of different semiconductor layers stacked vertically over the planar surface. The photodiodes are electrically connected in series.
摘要翻译：一种装置包括光检测器。光检测器包括具有平面表面的基板和沿平面表面定位的光电二极管阵列。每个光电二极管具有在平坦表面上垂直堆叠的不同半导体层的序列。光电二极管串联电连接。

4. 发明申请

US20090324250A1 Wireless transmitters 审中-公开
标题翻译：无线发射机
公开(公告)号：US20090324250A1
公开(公告)日：2009-12-31
申请号：US12317090
申请日：2008-12-19
申请人： Young-Kai Chen , Vincent Etienne Houtsma , Ting-Chen Hu , Nils Guenter Weimann
发明人： Young-Kai Chen , Vincent Etienne Houtsma , Ting-Chen Hu , Nils Guenter Weimann
IPC分类号： H04B10/04
CPC分类号： H04B10/00 , H04B2210/006
摘要： A wireless transmitter includes an optical modulator, an optical power splitter, a plurality of electrical drivers, and a plurality of antennas. The optical power splitter has a plurality of optical outputs and has an optical input connected to receive a modulated optical carrier from the optical modulator. Each driver is configured to detect a portion of the modulated optical carrier output by one of the optical outputs of the optical power splitter. Each antenna is connected to be driven by one of the electrical drivers.
摘要翻译：无线发射机包括光调制器，光功率分配器，多个电驱动器和多个天线。光功率分配器具有多个光输出，并具有连接以从光调制器接收调制光载波的光输入。每个驱动器被配置为检测由光功率分配器的光输出之一输出的调制光载波的一部分。每个天线被连接以由其中一个电驱动器驱动。

5. 发明授权

US07170147B2 Dissipative isolation frames for active microelectronic devices, and methods of making such dissipative isolation frames 有权
标题翻译：用于有源微电子器件的耗散隔离框架，以及制造这种耗散隔离框架的方法
公开(公告)号：US07170147B2
公开(公告)日：2007-01-30
申请号：US10628748
申请日：2003-07-28
申请人： Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
发明人： Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
IPC分类号： H00L23/552 , G00R21/26 , H00B11/02
CPC分类号： H01L23/544 , H01L23/552 , H01L23/66 , H01L2223/54473 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , Y10S438/953 , H01L2924/00
摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.
摘要翻译：具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。装置还包括覆盖并邻近掺杂半导体的耗散导体。装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。制造装置的方法。

6. 发明授权

US07190047B2 Transistors and methods for making the same 有权
标题翻译：晶体管及其制作方法
公开(公告)号：US07190047B2
公开(公告)日：2007-03-13
申请号：US10859894
申请日：2004-06-03
申请人： Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
发明人： Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
IPC分类号： H01L27/082
CPC分类号： H01L29/66242 , H01L29/66318 , H01L29/7371
摘要： Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.
摘要翻译：装置包括：掺杂以具有第一电荷载流子极性的第一化合物半导体组合物层; 第二化合物半导体组合物层，被掺杂以具有第二电荷载流子极性并位于第一层上; 第三化合物半导体组合物层，被掺杂以具有第一电荷载流子极性并位于第二层上; 第二层上的基极; 以及插入在基极和第三层之间并且限定基极和第三层之间的电荷载体存取路径距离的间隔环，路径距离在约和之间的范围内。制造设备的技术。器件可用作异双极晶体管，特别适用于高频应用。

7. 发明申请

US20050023708A1 Conductive isolation frames for active microelectronic devices, and methods of making such conductive isolation frames 有权
标题翻译：用于有源微电子器件的导电隔离框架及制造这种导电隔离框架的方法
公开(公告)号：US20050023708A1
公开(公告)日：2005-02-03
申请号：US10628748
申请日：2003-07-28
申请人： Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
发明人： Young-Kai Chen , Vincent Etienne Houtsma , Nils Guenter Weimann
IPC分类号： H01L23/544 , H01L23/552 , H01L23/66
CPC分类号： H01L23/544 , H01L23/552 , H01L23/66 , H01L2223/54473 , H01L2223/6627 , H01L2924/0002 , H01L2924/1903 , Y10S438/953 , H01L2924/00
摘要： Microelectronic apparatus having protection against high frequency crosstalk radiation, comprising: a planar insulating substrate; an active semiconductor electronic device located over a first region of the insulating substrate; and a doped semiconductor located in a second region of the insulating substrate substantially surrounding the first region. Apparatus further comprising a dissipative conductor overlaying and adjacent to the doped semiconductor. Apparatus additionally comprising metallic test probe contacts making electrical connections with the active semiconductor electronic device. Application of the apparatus to dissipate crosstalk radiation having a center frequency within a range between about 1 gigahertz and about 1,000 gigahertz. Methods for making the apparatus.
摘要翻译：具有防止高频串扰辐射的微电子装置，包括：平面绝缘基板; 位于所述绝缘基板的第一区域上方的有源半导体电子器件; 以及位于所述绝缘基板的第二区域中的基本上围绕所述第一区域的掺杂半导体。装置还包括覆盖并邻近掺杂半导体的耗散导体。装置还包括与有源半导体电子器件进行电连接的金属测试探针触点。该装置用于消散中心频率在约1千兆赫和约1,000千兆赫之间范围内的串扰辐射。制造装置的方法。

8. 发明授权

US07541624B2 Flat profile structures for bipolar transistors 有权
标题翻译：双极晶体管的平面结构
公开(公告)号：US07541624B2
公开(公告)日：2009-06-02
申请号：US10624038
申请日：2003-07-21
申请人： Young-Kai Chen , Rose Fasano Kopf , Wei-Jer Sung , Nils Guenter Weimann
发明人： Young-Kai Chen , Rose Fasano Kopf , Wei-Jer Sung , Nils Guenter Weimann
IPC分类号： H01L21/00
CPC分类号： H01L29/66318 , H01L29/0821 , H01L29/41708 , H01L29/42304 , H01L29/7371
摘要： A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.
摘要翻译：制造双极晶体管的方法包括在基板上形成集电极，基极和发射极半导体层，使得这些层相对于基板的相邻表面形成垂直的顺序。该方法包括蚀刻远离半导体层顶部的一部分以露出基底半导体层的一部分，然后在基底层的暴露部分上生长半导体。半导体层中的顶部之一是距离衬底最远的序列层。生长的原因使半导体横向围绕半导体层的顶部的垂直部分。

9. 发明授权

US08224134B2 Optoelectronic receiver 有权
标题翻译：光电接收机
公开(公告)号：US08224134B2
公开(公告)日：2012-07-17
申请号：US12418442
申请日：2009-04-03
申请人： Yves Baeyens , Young-Kai Chen , Vincent Houtsma , Andreas Leven , Nils Guenter Weimann
发明人： Yves Baeyens , Young-Kai Chen , Vincent Houtsma , Andreas Leven , Nils Guenter Weimann
IPC分类号： G02B6/12 , G02B6/28 , H04B10/06
CPC分类号： G02B6/4295 , G02B6/12 , G02B6/1228 , H01L31/1105 , H04B10/69
摘要： An optoelectronic receiver and associated method of operation.
摘要翻译：一种光电接收机及其相关操作方法。

10. 发明授权

US07001813B2 Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growths 有权
标题翻译：通过多步外延生长工艺制备的III族氮化物半导体层
公开(公告)号：US07001813B2
公开(公告)日：2006-02-21
申请号：US10349007
申请日：2003-01-22
申请人： Michael James Manfra , Nils Guenter Weimann
发明人： Michael James Manfra , Nils Guenter Weimann
IPC分类号： H01L21/336
CPC分类号： C30B29/40 , H01L21/02178 , H01L21/02241 , H01L21/02258 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02631 , H01L21/31679 , H01L29/2003 , H01L29/7371 , H01L29/7786 , H01L29/78
摘要： One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.
摘要翻译：一种方法包括在使生长表面粗糙的生长条件下外延生长III族氮化物半导体层。该方法还包括在使生长表面变得光滑的生长条件下，在第一层上执行第III族氮化物半导体的第二层的外延生长。两步增长产生较低的螺纹缺陷密度。

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