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1. 发明申请

US20060249794A1 Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS 有权
标题翻译：腐蚀后去除间隔物的方法，以增强接触蚀刻停止衬垫在MOS上的应力
公开(公告)号：US20060249794A1
公开(公告)日：2006-11-09
申请号：US11122666
申请日：2005-05-04
申请人： Young Teh , Yong Lee , Chung Lai , Wenhe Lin , Khee Lim , Wee Tan , John Sudijono , Hui Koh , Liang Hsia
发明人： Young Teh , Yong Lee , Chung Lai , Wenhe Lin , Khee Lim , Wee Tan , John Sudijono , Hui Koh , Liang Hsia
IPC分类号： H01L29/772 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823864
摘要： An example process to remove spacers from the gate of a NMOS transistor. A stress creating layer is formed over the NMOS and PMOS transistors and the substrate. In an embodiment, the spacers on gate are removed so that stress layer is closer to the channel of the device. The stress creating layer is preferably a tensile nitride layer. The stress creating layer is preferably a contact etch stop liner layer. In an embodiment, the gates, source and drain region have an silicide layer thereover before the stress creating layer is formed. The embodiment improves the performance of the NMOS transistors.
摘要翻译：从NMOS晶体管的栅极去除间隔物的示例性过程。在NMOS和PMOS晶体管和衬底上形成应力产生层。在一个实施例中，栅极上的间隔物被去除，使得应力层更靠近器件的通道。应力产生层优选为拉伸氮化物层。应力产生层优选为接触蚀刻停止衬层。在一个实施例中，栅极，源极和漏极区域在形成应力产生层之前具有硅化物层。该实施例改善了NMOS晶体管的性能。

2. 发明申请

US20060252194A1 Composite stress spacer 有权
标题翻译：复合应力间隔
公开(公告)号：US20060252194A1
公开(公告)日：2006-11-09
申请号：US11122667
申请日：2005-05-04
申请人： Khee Lim , Wenhe Lin , Chung Lai , Yong Lee , Liang Hsia , Young Teh , John Sudijono , Wee Tan , Hui Koh
发明人： Khee Lim , Wenhe Lin , Chung Lai , Yong Lee , Liang Hsia , Young Teh , John Sudijono , Wee Tan , Hui Koh
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823864
摘要： An example method embodiment forms spacers that create tensile stress on the substrate on both the PFET and NFET regions. We form PFET and NFET gates and form tensile spacers on the PFET and NFET gates. We implant first ions into the tensile PFET spacers to form neutralized stress PFET spacers. The neutralized stress PFET spacers relieve the tensile stress created by the tensile stress spacers on the substrate. This improves device performance.
摘要翻译：示例性方法实施例形成在PFET和NFET区域上在衬底上产生拉伸应力的间隔物。我们形成PFET和NFET栅极，并在PFET和NFET栅极上形成拉伸间隔物。我们将第一离子注入拉伸的PFET间隔物中以形成中和的应力PFET间隔物。中和的应力PFET间隔物减轻了由衬底上的拉伸应力间隔物产生的拉伸应力。这提高了设备性能。

3. 发明申请

US20070018378A1 Pickup mechanism for a business machine 失效
标题翻译：商业机器的拾取机制
公开(公告)号：US20070018378A1
公开(公告)日：2007-01-25
申请号：US11297555
申请日：2005-12-07
申请人： Chung Lai
发明人： Chung Lai
IPC分类号： B65H3/32
CPC分类号： B65H3/0684 , B65H2404/162
摘要： A pickup mechanism for a business machine. A support shaft is disposed in the business machine. An oscillating arm includes a first end and a second end opposite thereto. The first end is fitted on the support shaft. An inner-rotor type motor is disposed on the second end of the oscillating arm and includes a central rotating shaft extending beyond the inner-rotor type motor. A pickup roller is connected to the central rotating shaft. When the inner-rotor type motor operates, the pickup roller rotates by rotation of the central rotating shaft.
摘要翻译：商用机器的拾取机构。支撑轴设置在商业机器中。摆动臂包括第一端和与其相对的第二端。第一端安装在支撑轴上。内转子型电动机设置在摆动臂的第二端，并且包括延伸超过内转子型电动机的中心旋转轴。拾取辊连接到中央旋转轴。当内转子型电动机工作时，拾取辊通过中心旋转轴的旋转而旋转。

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