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1. 发明授权

US5637235A Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique 失效
公开(公告)号：US5637235A
公开(公告)日：1997-06-10
申请号：US664452
申请日：1996-06-17
申请人： Young K. Kim , J. Lamar Nix
发明人： Young K. Kim , J. Lamar Nix
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B5/399 , H01L43/08 , G11B2005/3996
摘要： A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.

2. 发明授权

US5608593A Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique 失效
标题翻译：形状自旋阀型磁阻传感器及其制造方法，结合域稳定技术
公开(公告)号：US5608593A
公开(公告)日：1997-03-04
申请号：US401553
申请日：1995-03-09
申请人： Young K. Kim , J. Lamar Nix
发明人： Young K. Kim , J. Lamar Nix
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B5/399 , H01L43/08 , G11B2005/3996
摘要： A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.
摘要翻译：磁阻传感器及其制造方法包括自旋阀结构，该自旋阀结构包括被钉扎的底部铁磁层和由薄的非磁性金属间隔层隔开的有源顶部铁磁层。活性铁磁层和下面的间隔层形成为具有锥形相对侧的台面结构，以在薄膜制造工艺中促进更好的表面平坦化。可以在旋转阀结构的端部处以一般共面关系沉积一对永磁体层部分，以促进域稳定化，但也可以通过较薄的分离层与其分离。可以通过光刻地限定覆盖有源铁磁层的永磁体层部分之间的间隔来精确地和再现地确定器件的磁读取磁道宽度。

3. 发明申请

US20090053668A1 Novel dental dam and methods of using same 失效
标题翻译：新型牙科大坝及其使用方法
公开(公告)号：US20090053668A1
公开(公告)日：2009-02-26
申请号：US11894820
申请日：2007-08-22
申请人： Young K. Kim
发明人： Young K. Kim
IPC分类号： A61C5/12
CPC分类号： A61C5/82
摘要： The present invention is a system for performing a dental procedure that reduces or eliminates particulates produced during the procedure from being deposited in the mouth of the patient or about the area where the dental procedure is performed. This system comprises, an enclosed dental dam having a semi-rigid upper ring, lower ring and semi-flexible dome. The semi-rigid upper ring has a snap connector along its interior perimeter edge and a first radially outward extending lip along its top side. Then semi-rigid lower ring has a snap connector able to be received by the interior perimeter edge of the semi-rigid upper ring for holding a flexible sheet having an aperture for sealing about a tooth and a second radially outward extending lip. When the upper and lower rings are connected the first and second radially outward extending lips form a snap fit adapter. The semi-flexible dome has an upper surface having at least two apertures and the base having a snap fit adapter along its inner perimeter edge for being received by the groove formed between the radially outward extending lips when the upper and lower rings are connected. One of the at least two apertures is able to receive an air abrasive drill for removing tooth material and the other is able to receive a dental camera for visualizing the tooth during the dental procedure.
摘要翻译：本发明是一种用于执行牙科手术的系统，其减少或消除在手术过程中产生的微粒沉积在患者的口中或在牙科手术进行的区域。该系统包括具有半刚性上环，下环和半柔性圆顶的封闭式牙坝。半刚性上环具有沿着其内周边缘的卡扣连接器和沿其顶侧的第一径向向外延伸的唇缘。然后半刚性下环具有能够被半刚性上环的内周边缘接收的卡扣连接器，用于保持具有用于密封齿的孔的柔性片，以及第二径向向外延伸的唇。当上下环连接时，第一和第二径向向外延伸的唇形成卡扣配合适配器。半柔性圆顶具有具有至少两个孔的上表面，并且底座具有沿着其内周边缘的卡扣配合适配器，以在上下环连接时由形成在径向向外延伸的唇之间的凹槽接收。所述至少两个孔中的一个能够接收用于移除牙齿材料的空气磨料钻，并且另一个能够接收用于在牙科手术期间使牙齿可视化的牙科相机。

4. 发明申请

US20130143067A1 ANTI-OXIDATION COATING USING GRAPHENE 审中-公开
标题翻译：使用石墨的抗氧化涂料
公开(公告)号：US20130143067A1
公开(公告)日：2013-06-06
申请号：US13368935
申请日：2012-02-08
申请人： Ki Il KIM , Young K. Kim , Sang-Woo Kim
发明人： Ki Il KIM , Young K. Kim , Sang-Woo Kim
IPC分类号： B32B15/04 , B05D1/02 , B32B9/04 , C23C16/26 , B82Y40/00 , B82Y30/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/0281 , C23C16/26 , Y10T428/12625 , Y10T428/261 , Y10T428/292
摘要： A metal plate or wire coated with a graphene layer and a method for manufacturing the graphene coated metal plate or wire are provided. The graphene coated metal plate or wire can include a nickel layer or a copper layer coated on an outer surface of the metal plate or wire, and a graphene layer coated on an outer surface of the nickel layer or the copper layer. The graphene coated metal plate or wire can be manufactured by using a chemical vapor deposition equipment or spraying a reduced graphene oxide (RGO) solution or a graphene oxide (GO) solution on the surface.
摘要翻译：提供了涂覆有石墨烯层的金属板或金属丝以及制造石墨烯涂覆的金属板或金属丝的方法。石墨烯涂覆的金属板或线可以包括涂覆在金属板或线的外表面上的镍层或铜层，以及涂覆在镍层或铜层的外表面上的石墨烯层。可以通过使用化学气相沉积设备或在表面上喷洒还原型氧化烯（RGO）溶液或氧化石墨烯（GO）溶液来制造石墨烯涂覆的金属板或线。

5. 发明授权

US5633262A Quinoline carboxylic acid derivatives having 7-(4-amino-methyl-3-oxime) pyrrolidine substituent and processes for preparing thereof 失效
标题翻译：具有7-（4-氨基 - 甲基-3-肟）吡咯烷取代基的喹啉羧酸衍生物及其制备方法
公开(公告)号：US5633262A
公开(公告)日：1997-05-27
申请号：US490978
申请日：1995-06-15
申请人： Chang Y. Hong , Young K. Kim , Jay H. Chang , Se H. Kim , Hoon Choi , Do H. Nam , Jin H. Kwak , Yi N. Jeong , Jeong I. Oh , Mu Y. Kim
发明人： Chang Y. Hong , Young K. Kim , Jay H. Chang , Se H. Kim , Hoon Choi , Do H. Nam , Jin H. Kwak , Yi N. Jeong , Jeong I. Oh , Mu Y. Kim
IPC分类号： A61K31/435 , A61K31/47 , A61P31/04 , C07D401/04 , C07D401/14 , C07D405/14 , C07D413/14 , C07D417/14 , C07D471/04 , A61K31/44 , C07D471/02
CPC分类号： C07D401/04 , C07D401/14 , C07D405/14 , C07D417/14 , C07D471/04
摘要： The present invention relates to a novel quinolone compound having an excellent antibacterial activity. More specifically, the present invention relates to a novel quinoline(naphthyridine)carboxylic acid derivative represented by the following formula (I), which has an 4-aminomethyl-3-oximepyrrolidine substituent on 7-position of the quinolone nucleus and shows a superior antibacterial activity in contrast to the known quinolone antibacterial agents having a weak activity against gram-positive bacterial strains and also has a broad antibacterial spectrum and a highly improved pharmacokinetic property: ##STR1## wherein R, R.sub.1, R.sub.2, R.sub.3, R.sub.4 and Q are defined as described in the specification.
摘要翻译：本发明涉及具有优异抗菌活性的新型喹诺酮化合物。更具体地说，本发明涉及下述式（I）所示的喹啉（萘啶）羧酸衍生物，其在喹诺酮核的7-位具有4-氨基甲基-3-氧代吡咯烷酮取代基，显示出优异的抗菌性与具有对革兰氏阳性菌菌株的弱活性的已知喹诺酮类抗菌剂相比，具有广泛的抗菌谱和高度改善的药代动力学性质：其中R，R1，R2，R3，R4和 Q如说明书所述定义。

6. 发明授权

US5155041A Culture of Bacillus subtilis 失效
标题翻译：枯草芽孢杆菌的培养
公开(公告)号：US5155041A
公开(公告)日：1992-10-13
申请号：US698522
申请日：1991-05-10
申请人： Song H. Bok , Sung U. Kim , Kwang H. Son , Seong K. Kim , Young K. Kim , Hang W. Lee , Jee W. Lee , Hye K. Kwon , Tae S. Jeong
发明人： Song H. Bok , Sung U. Kim , Kwang H. Son , Seong K. Kim , Young K. Kim , Hang W. Lee , Jee W. Lee , Hye K. Kwon , Tae S. Jeong
IPC分类号： A01N63/02 , A23B7/154 , A61K8/64 , A61Q19/00 , C07K7/02 , C07K7/56 , C12N1/20 , C12P21/04
CPC分类号： C12R1/07 , A01N63/02 , A23B7/154 , A61K8/64 , A61Q19/00 , C07K7/02 , C07K7/56 , C12N1/20
摘要： The present invention provides a novel microorganism, Bacillus subtilis subspecies Krictiensis, and its mutant, Bacillus subtilis subspecies Krictiensis M 18-91; and a novel antifungal complex, KRF-001, produced from said microorganisms. The present invention also provides a process for producing said complex by culturing or fermenting said microorganisms and a process for purifying said complex to a desired degree of high purity.
摘要翻译：本发明提供了一种新型微生物枯草芽孢杆菌亚种Krictiensis及其突变型枯草芽孢杆菌亚种Krictiensis M 18-91; 和由所述微生物产生的新型抗真菌复合物KRF-001。本发明还提供了通过培养或发酵所述微生物来生产所述复合物的方法以及将所述复合物纯化至所需高纯度程序。

7. 发明申请

US20120223621A1 MULTIPURPOSE PORTABLE POWER GENERATING SYSTEM 审中-公开
标题翻译：多功能便携式发电系统
公开(公告)号：US20120223621A1
公开(公告)日：2012-09-06
申请号：US13172377
申请日：2011-06-29
申请人： Ki Il KIM , Young K. Kim , Jong Ho Lee , Tae Wook Kwon , Gui Hyeon Moon
发明人： Ki Il KIM , Young K. Kim , Jong Ho Lee , Tae Wook Kwon , Gui Hyeon Moon
IPC分类号： H02N2/18
CPC分类号： H02N2/18
摘要： Provided is a system for producing electricity, the system having an object configured to move in at least one of, an upward direction, a downward direction, a left direction, a right direction, an eccentric motion, a straight line, or a circular motion; and at least one piezoelectric element attached to the object, wherein, when the object is moving, the object is configured to apply a pressing force to the at least one piezoelectric element to produce the electricity.
摘要翻译：提供一种用于发电的系统，该系统具有被配置为沿向上方向，向下方向，左方向，右方向，偏心运动，直线或圆周运动中的至少一个移动的物体 ; 以及至少一个附着到所述物体的压电元件，其中，当所述物体移动时，所述物体构造成对所述至少一个压电元件施加按压力以产生电力。

8. 发明授权

US07874840B2 Flexible dental dam and methods of using same 失效
标题翻译：柔性牙坝及其使用方法
公开(公告)号：US07874840B2
公开(公告)日：2011-01-25
申请号：US11894820
申请日：2007-08-22
申请人： Young K. Kim
发明人： Young K. Kim
IPC分类号： A61C5/00
CPC分类号： A61C5/82
摘要： A flexible dental dam for application in a variety of dental procedures, the flexible dental dam including a flexible dome having at least two apertures for inserting dental tools, and a flexible sheet bound between two rigid rings, wherein the flexible dome is attached to the flexible sheet at one of the two rigid rings. The flexible sheet can include an aperture for positioning around a tooth. Methods for use of the flexible dental dam are describe.
摘要翻译：一种应用于各种牙科手术的柔性牙坝，其柔性牙坝包括具有用于插入牙科工具的至少两个孔的柔性圆顶，以及限定在两个刚性环之间的柔性片，其中所述柔性圆顶连接到柔性在两个刚性环之一的片材上。柔性片材可以包括用于围绕牙齿定位的孔。描述了使用柔性牙坝的方法。

9. 发明授权

US5607494A Artificial soil composition and a method of growing vegetation on a sloped surface 失效
标题翻译：人造土壤组成和在斜坡上生长植被的方法
公开(公告)号：US5607494A
公开(公告)日：1997-03-04
申请号：US97888
申请日：1993-07-28
申请人： Young K. Kim
发明人： Young K. Kim
IPC分类号： C05F11/04 , C05F11/02 , C05F11/08
CPC分类号： C05F11/04 , Y10S71/903 , Y10S71/904
摘要： An artificial soil composition and a method of growing vegetation on a sloped surface, especially a cut rock surface are disclosed. The artificial soil composition includes peat, granular soil, sewage sediment formed by the treatment of urban waste for example and pulp sludge formed by the de-watering of fibrous material and is a byproduct of the manufacture of paper from wood pulp. The artificial soil composition is applied over a meshing which is secured over a sloped cut rock surface. Plants are grown in the layer of artificial soil. Experimentally, the artificial soil is shown to have an increased adhesion to the inclined surface compared to natural soil, promotes plant growth and retains water to a greater extent than natural soil but does not cause an environmental hazard resulting from the leaching of compounds in the run-off water.The preferred concentrations of the constituents by weight are: peat (10-30%) granular soil (10-30%) sewage sediment (40-60%) and pulp sludge (25-44%).
摘要翻译：公开了一种人造土壤组合物和在倾斜表面，特别是切割岩石表面上生长植被的方法。人造土壤组合物包括泥炭，颗粒土壤，通过处理城市废物形成的污水沉淀物和由纤维材料脱水形成的纸浆，并且是由木浆制造纸的副产物。将人造土壤组合物施加在固定在倾斜的切割岩石表面上的啮合上。植物生长在人造土壤层。实验上，与天然土壤相比，人造土壤显示出对倾斜表面的粘附性增加，促进植物生长并且比天然土壤更大程度地保持水分，但不会引起化合物在运行中浸出而引起的环境危害关闭水。重量份数组分的优选浓度为：泥炭（10-30％）颗粒土（10-30％）污泥（40-60％）和纸浆污泥（25-44％）。

10. 发明授权

US5374575A Method for fabricating MOS transistor 失效
标题翻译：制造MOS晶体管的方法
公开(公告)号：US5374575A
公开(公告)日：1994-12-20
申请号：US156462
申请日：1993-11-23
申请人： Young K. Kim , Kyung S. Kim , Min H. Park
发明人： Young K. Kim , Kyung S. Kim , Min H. Park
IPC分类号： H01L21/336 , H01L29/423 , H01L29/78 , H01L21/265
CPC分类号： H01L29/66583 , H01L29/42368 , H01L29/66492 , H01L29/7836 , H01L29/66537
摘要： A method for fabricating an LDD MOS transistor having an improved structure capable of simplifying the fabrication and improving characteristics of the transistor. The methods includes the steps of forming a field oxide film for an active region isolation on a silicon substrate, thickly depositing an oxide film and etching the thick oxide film to form a first opening over an active region, forming side wall spacers in the first opening, implanting p type impurity ions in the silicon substrate through the first opening to form a channel region, filling the first opening with a first polysilicon film, removing the spacers to form second openings respectively in both sides of the first polysilicon film, implanting n type impurity ions in the silicon substrate through the second openings to form low concentration source and drain regions respectively disposed adjacent to both lateral ends of the channel region, removing the first polysilicon film to form a third opening, growing an oxide film over the resulting structure to form a gate oxide film, filling the third opening with a second polysilicon film, patterning the gate oxide film, and implanting n type impurity ions in the silicon substrate to form high concentration source and drain regions respectively disposed adjacent to the low concentration source and drain regions.
摘要翻译：一种制造具有能够简化晶体管的制造和改善特性的改进结构的LDD MOS晶体管的方法。所述方法包括以下步骤：在硅衬底上形成用于有源区隔离的场氧化物膜，厚度沉积氧化膜并蚀刻厚氧化物膜以在有源区上形成第一开口，在第一开口中形成侧壁间隔物通过所述第一开口在所述硅衬底中注入p型杂质离子以形成沟道区，用第一多晶硅膜填充所述第一开口，移除所述间隔物以分别在所述第一多晶硅膜的两侧形成第二开口，将n型通过第二开口在硅衬底中形成杂质离子，以形成分别邻近通道区两个侧端设置的低浓度源极和漏极区域，去除第一多晶硅膜以形成第三个开口，在所得到的结构上生长氧化膜形成栅极氧化膜，用第二多晶硅膜填充第三开口，图案化栅极氧化膜并植入在硅衬底中形成n型杂质离子，以形成分别设置在低浓度源极和漏极区附近的高浓度源极和漏极区域。

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