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    • 7. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US07537673B2
    • 2009-05-26
    • US11219956
    • 2005-09-06
    • Young Jong LeeJun Young ChoiHyun Hwan AhnChan-Ho KangHyun-Woo BaekYoung-Joo Hwang
    • Young Jong LeeJun Young ChoiHyun Hwan AhnChan-Ho KangHyun-Woo BaekYoung-Joo Hwang
    • H01L21/3065C23C16/00C23C16/458C23C16/50
    • C23C16/4585
    • Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.
    • 本文公开了一种等离子体处理装置,其在真空室内产生等离子体以使用等离子体处理半导体衬底。 该装置包括基板安装台,外提升杆和挡板。 外提升杆包括驱动轴和垂直于驱动轴的上端联接的基板支撑构件。 挡板包括耦合到驱动轴的上端的挡板和耦合到挡板的下表面的屏蔽部分。 衬底支撑构件是可折叠衬底支撑构件。 挡板和基板支撑构件通过驱动轴同时上下驱动。 结果,可以在等离子体处理装置的操作期间保护基板支撑构件免受等离子体的影响,并且防止挡板和外部提升杆之间的干扰。