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1. 发明申请

US20130035022A1 Two-Part Plastic Retaining Ring 审中-公开
标题翻译：两部分塑料保持环
公开(公告)号：US20130035022A1
公开(公告)日：2013-02-07
申请号：US13560606
申请日：2012-07-27
申请人： Young J. Paik , James Klingler , Stacy Meyer , Christopher R. Mahon , Laxman Murugesh , Ashish Bhatnagar , Padma Gopalakrishnan
发明人： Young J. Paik , James Klingler , Stacy Meyer , Christopher R. Mahon , Laxman Murugesh , Ashish Bhatnagar , Padma Gopalakrishnan
IPC分类号： B24B37/32
CPC分类号： B24B37/32
摘要： A retaining ring includes a generally annular lower portion and a generally annular upper portion. The lower portion has a bottom surface for contacting a polishing pad during polishing and a top surface. The upper portion has a bottom surface secured to the top surface of the lower portion and a top surface configured to be mechanically affixed to and abut a rigid base of a carrier head. The lower portion is a first plastic, and the upper portion is a different second plastic that is about the same or more rigid than the first plastic.
摘要翻译：保持环包括大致环形的下部和大致环形的上部。下部具有用于在抛光期间接触抛光垫的底表面和顶表面。上部具有固定到下部的顶表面的底表面和被配置为机械地固定到承载头的刚性基座并邻接其的刚性基座的顶表面。下部是第一塑料，上部是与第一塑料大致相同或更刚性的不同的第二塑料。

2. 发明授权

US08617672B2 Localized surface annealing of components for substrate processing chambers 有权
标题翻译：用于基板处理室的部件的局部表面退火
公开(公告)号：US08617672B2
公开(公告)日：2013-12-31
申请号：US11181041
申请日：2005-07-13
申请人： Ashish Bhatnagar , Laxman Murugesh , Padma Gopalakrishnan
发明人： Ashish Bhatnagar , Laxman Murugesh , Padma Gopalakrishnan
IPC分类号： B32B1/08 , C03B29/02
CPC分类号： C04B41/0036 , B23K26/352 , C03B25/02 , H01L21/67115 , H01L21/6831 , Y10T428/131
摘要： A substrate processing chamber component has a structural body with localized surface regions having annealed microcracks. The annealed microcracks reduce crack propagation and increase fracture resistance. In one method of manufacture, the structural body of the component is formed, and a laser beam is directed onto localized surface regions of the body for a sufficient time to anneal the surface microcracks.
摘要翻译：衬底处理室部件具有具有退火微裂纹的局部表面区域的结构体。退火的微裂纹减少裂纹扩展并增加抗裂性。在一种制造方法中，形成部件的结构体，并将激光束引导到身体的局部表面区域足够的时间来退火表面微裂纹。

3. 发明申请

US20070014949A1 Localized surface annealing of components for substrate processing chambers 有权
标题翻译：用于基板处理室的部件的局部表面退火
公开(公告)号：US20070014949A1
公开(公告)日：2007-01-18
申请号：US11181041
申请日：2005-07-13
申请人： Ashish Bhatnagar , Laxman Murugesh , Padma Gopalakrishnan
发明人： Ashish Bhatnagar , Laxman Murugesh , Padma Gopalakrishnan
IPC分类号： B28B11/00 , F16L9/10 , B32B1/08 , C03B23/00 , C03B29/00 , C03C15/00
CPC分类号： C04B41/0036 , B23K26/352 , C03B25/02 , H01L21/67115 , H01L21/6831 , Y10T428/131
摘要： A substrate processing chamber component has a structural body with localized surface regions having annealed microcracks. The annealed microcracks reduce crack propagation and increase fracture resistance. In one method of manufacture, the structural body of the component is formed by conventional means, and a laser beam is directed onto localized surface regions of the body for a sufficient time to anneal the surface microcracks.
摘要翻译：衬底处理室部件具有具有退火微裂纹的局部表面区域的结构体。退火的微裂纹减少裂纹扩展并增加抗裂性。在一种制造方法中，部件的结构体通过常规方式形成，激光束被引导到身体的局部表面区域足够的时间来退火表面微裂纹。

4. 发明授权

US07732056B2 Corrosion-resistant aluminum component having multi-layer coating 有权
标题翻译：具有多层涂层的耐腐蚀铝成分
公开(公告)号：US07732056B2
公开(公告)日：2010-06-08
申请号：US11037633
申请日：2005-01-18
申请人： Ashish Bhatnagar , Laxman Murugesh
发明人： Ashish Bhatnagar , Laxman Murugesh
IPC分类号： B32B15/04 , C23C14/08 , C23C14/34 , C25D11/16 , C25D11/18
CPC分类号： C23C16/4404 , C23C14/081
摘要： A method of providing a corrosion-resistant coating on a surface of an aluminum component comprises anodizing the surface of the aluminum component to form an anodized aluminum oxide layer and sputter coating a sputtered layer on the anodized aluminum oxide layer. A coated aluminum component can be used in a substrate processing chamber and comprises an aluminum body, an anodized aluminum oxide layer formed on the aluminum body, and a sputtered layer comprising aluminum oxide on the anodized aluminum oxide layer.
摘要翻译：在铝部件的表面上提供耐腐蚀涂层的方法包括阳极氧化铝部件的表面以形成阳极氧化的氧化铝层，并在阳极氧化的氧化铝层上溅射涂覆溅射层。涂覆的铝部件可以用在基板处理室中，并且包括铝体，在铝体上形成的阳极氧化的氧化铝层，以及在阳极氧化的氧化铝层上包含氧化铝的溅射层。

5. 发明申请

US20060159940A1 Corrosion-resistant aluminum component having multi-layer coating 有权
标题翻译：具有多层涂层的耐腐蚀铝成分
公开(公告)号：US20060159940A1
公开(公告)日：2006-07-20
申请号：US11037633
申请日：2005-01-18
申请人： Ashish Bhatnagar , Laxman Murugesh
发明人： Ashish Bhatnagar , Laxman Murugesh
IPC分类号： B32B15/04 , C23C14/00 , B32B9/00 , B32B19/00
CPC分类号： C23C16/4404 , C23C14/081
摘要： A method of providing a corrosion-resistant coating on a surface of an aluminum component comprises anodizing the surface of the aluminum component to form an anodized aluminum oxide layer and sputter coating a sputtered layer on the anodized aluminum oxide layer. A coated aluminum component can be used in a substrate processing chamber and comprises an aluminum body, an anodized aluminum oxide layer formed on the aluminum body, and a sputtered layer comprising aluminum oxide on the anodized aluminum oxide layer.
摘要翻译：在铝部件的表面上提供耐腐蚀涂层的方法包括阳极氧化铝部件的表面以形成阳极氧化的氧化铝层，并在阳极氧化的氧化铝层上溅射涂覆溅射层。涂覆的铝部件可以用在基板处理室中，并且包括铝体，在铝体上形成的阳极氧化的氧化铝层，以及在阳极氧化的氧化铝层上包含氧化铝的溅射层。

6. 发明授权

US06450117B1 Directing a flow of gas in a substrate processing chamber 有权
标题翻译：引导基板处理室中的气流
公开(公告)号：US06450117B1
公开(公告)日：2002-09-17
申请号：US09633494
申请日：2000-08-07
申请人： Laxman Murugesh , Padmanaban Krishnaraj , Michael Cox , Canfeng Lai , Narendra Dubey , Tom K. Cho , Sudhir Ram Gondhalekar , Lily L. Pang
发明人： Laxman Murugesh , Padmanaban Krishnaraj , Michael Cox , Canfeng Lai , Narendra Dubey , Tom K. Cho , Sudhir Ram Gondhalekar , Lily L. Pang
IPC分类号： C23C1600
CPC分类号： C23C16/45574 , C23C16/4402 , C23C16/4405 , C23C16/452 , C23C16/45508 , H01J37/3244 , H01J37/32862 , Y10S438/905
摘要： A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.
摘要翻译：衬底处理室30，其包括适于将处理气体提供到室30中以处理衬底25的第一气体分配器65，适于将清洁气体提供到腔室30中以清洁腔室的第二气体分配器215以及排气以从腔室30排出处理气体或清洁气体。

7. 发明授权

US5994662A Unique baffle to deflect remote plasma clean gases 失效
标题翻译：偏转等离子体清洁气体的独特挡板
公开(公告)号：US5994662A
公开(公告)日：1999-11-30
申请号：US867683
申请日：1997-05-29
申请人： Laxman Murugesh
发明人： Laxman Murugesh
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/321 , H01J37/3244
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

8. 发明授权

US07135426B2 Erosion resistant process chamber components 有权
标题翻译：防腐处理室组件
公开(公告)号：US07135426B2
公开(公告)日：2006-11-14
申请号：US10854771
申请日：2004-05-25
申请人： Laxman Murugesh , Stan Detmar , Ho Fang
发明人： Laxman Murugesh , Stan Detmar , Ho Fang
IPC分类号： C04B35/111 , C23C16/00
CPC分类号： C23C16/4404 , C23C16/4581
摘要： A substrate processing chamber component demonstrates reduced erosion in an energized gas. The component has a ceramic structure composed of aluminum oxide with a surface exposed to the energized gas in the chamber. The erosion of the surface by the energized gas is substantially reduced by erosion resistant properties of the ceramic structure, which arise from a ratio of the total area of the grains GSA to the total area of the grain boundary regions GBSA in the ceramic structure of from about 0.25 to about 2.5. Also, at least about 80% of the grains in the ceramic structure have a grain size in the range of from about 1 micron to about 20 microns. The ceramic structure also has a purity of at least about 99.8% by weight to further reduce erosion of the surface.
摘要翻译：衬底处理室组件表现出在通电气体中减少的侵蚀。该组件具有由氧化铝组成的陶瓷结构，其表面暴露于室中的通电气体。通过赋予气体的表面的侵蚀通过陶瓷结构的抗侵蚀性能而显着降低，这是由于晶粒G S SA的总面积与晶界的总面积的比率而产生的陶瓷结构中的区域GB 为约0.25至约2.5。此外，陶瓷结构中的至少约80％的晶粒具有在约1微米至约20微米范围内的晶粒尺寸。陶瓷结构还具有至少约99.8重量％的纯度，以进一步减少表面的侵蚀。

9. 发明授权

US06878214B2 Process endpoint detection in processing chambers 有权
标题翻译：处理室中的过程终点检测
公开(公告)号：US06878214B2
公开(公告)日：2005-04-12
申请号：US10057037
申请日：2002-01-24
申请人： Laxman Murugesh , Gary R. Ahr
发明人： Laxman Murugesh , Gary R. Ahr
IPC分类号： H01J37/32 , H01L21/00 , H01L21/205 , H01L21/3065 , B08B7/04
CPC分类号： H01L21/67253 , H01J37/32862 , H01J37/32935 , H01J37/32963 , H01J37/32972 , Y10S438/905
摘要： Method and apparatus for determining an endpoint of a cleaning process running in a chamber. In particular, one embodiment of the present invention is a method that includes steps of: (a) directing radiation absorbed by a byproduct of the cleaning process into an exhaust line of the chamber; (b) detecting a measure of absorbance of the radiation by the byproduct; and (c) determining the endpoint when the measure of absorbance falls within a predetermined window.
摘要翻译：用于确定在室中运行的清洁过程的终点的方法和装置。特别地，本发明的一个实施例是一种方法，其包括以下步骤：（a）将由清洁过程的副产物吸收的辐射引导到腔室的排气管线中; （b）检测副产物对辐射的吸光度的测量; 和（c）当吸光度测量落在预定窗口内时确定终点。

10. 发明授权

US06200911B1 Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power 失效
公开(公告)号：US06200911B1
公开(公告)日：2001-03-13
申请号：US09264990
申请日：1998-04-21
申请人： Pravin Narwankar , Sameer Desai , Walter Zygmunt , Turgut Sahin , Laxman Murugesh
发明人： Pravin Narwankar , Sameer Desai , Walter Zygmunt , Turgut Sahin , Laxman Murugesh
IPC分类号： H01L2131
CPC分类号： C23C16/4411 , C23C16/045 , C23C16/4405 , C23C16/4412 , C23C16/46 , C23C16/507 , C23C16/52 , H01J37/321 , H01L21/02164 , H01L21/02211 , H01L21/02274 , H01L21/31608 , H01L21/31612 , H01L21/76224
摘要： A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

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