专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060287405A1 Process for the preparation of dimethylether from hydrocarbons 有权
标题翻译：从碳氢化合物制备二甲醚的方法
公开(公告)号：US20060287405A1
公开(公告)日：2006-12-21
申请号：US11450580
申请日：2006-06-10
申请人： Young Baek , Won Cho , Byoung Cho , Jung Suh , Dong Kim , Hyung Kim , Seung Lee , Woo Ju
发明人： Young Baek , Won Cho , Byoung Cho , Jung Suh , Dong Kim , Hyung Kim , Seung Lee , Woo Ju
IPC分类号： C07C27/06
CPC分类号： C07C41/09 , C07C41/01 , C07C43/043
摘要： Disclosed herein is a process for the preparation of dimethylether from hydrocarbons, including tri-reforming a feedstock mixture comprised of hydrocarbons, carbon dioxide and water vapor in the presence of a tri-reforming catalyst, to prepare a syngas, which then undergoes gas-phase direct synthesis into dimethylether in one step in the presence of a hybrid catalyst. According to the process of this invention, three main processes among typical syngas preparation processes are simultaneously performed, and then, the syngas thus obtained is prepared into dimethylether through a direct reaction in one step, thereby decreasing the apparatus cost and operation cost. In addition, all of the carbon dioxide separated and recovered from the unreacted material and by-products may be reused as reaction material, thus decreasing the generation of carbon dioxide and reducing the material cost.
摘要翻译：本文公开了一种从烃制备二甲醚的方法，包括在三重转化催化剂的存在下，由烃，二氧化碳和水蒸气组成的原料混合物进行三重重整，以制备合成气，然后合成气经历气相在混合催化剂存在下，在一个步骤中直接合成二甲醚。根据本发明的方法，同时进行典型的合成气制备过程中的三个主要过程，然后通过一步直接反应将由此获得的合成气制备成二甲醚，从而降低设备成本和操作成本。此外，从未反应的物质和副产物中分离回收的二氧化碳全部可以作为反应物质再利用，从而减少二氧化碳的产生并降低材料成本。

2. 发明申请

US20070243865A1 Method for after service of mobile telephone 有权
标题翻译：移动电话售后服务的方法
公开(公告)号：US20070243865A1
公开(公告)日：2007-10-18
申请号：US11729882
申请日：2007-03-30
申请人： Byoung Cho
发明人： Byoung Cho
IPC分类号： H04Q7/20 , H04M1/00
CPC分类号： H04W24/00
摘要： The invention relates to a mobile terminal, and in particular to a method for after service of a mobile terminal which is adapted to optimize the performance of the mobile terminal. The method comprises the steps of: self-diagnosing, judging if the terminal malfunctions and connecting with the A/S center in the mobile terminal; requesting from the A/S center state information for indicating the operated condition to the mobile terminal; transmitting from the mobile terminal the stated information thereof according to the request; analyzing the transmitted state information and transmitting control information; and correcting the operated condition of the mobile terminal according to the transmitted control information. According to the method for after service of the mobile terminal, the inconvenience of the user to visit the A/C center can be reduced.
摘要翻译：本发明涉及一种移动终端，具体地说涉及适于优化移动终端的性能的移动终端的售后服务的方法。该方法包括以下步骤：自动诊断终端是否发生故障并与移动终端中的A / S中心连接; 从所述A / S中心状态请求用于向所述移动终端指示所述操作状态的信息; 从移动终端根据请求发送其所述信息; 分析发送状态信息并发送控制信息; 以及根据发送的控制信息来校正移动终端的操作状态。根据移动终端的售后服务方式，可以减少用户访问A / C中心的不便。

3. 发明申请

US20060177579A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060177579A1
公开(公告)日：2006-08-10
申请号：US11376402
申请日：2006-03-15
申请人： Cheol Shin , Byoung Cho , Sang Sim , Jung Kim , Won Lee , Dae Kim
发明人： Cheol Shin , Byoung Cho , Sang Sim , Jung Kim , Won Lee , Dae Kim
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/45551 , C23C16/452 , C23C16/45519 , C23C16/45542 , C23C16/45578 , C23C16/4584 , C23C16/50 , H01J37/32779 , H01J37/32862 , H01L21/28562 , Y10S438/913
摘要： Disclosed are PEALD (plasma-enhanced atomic layer deposition) apparatus and PEALD method for manufacturing a semiconductor device, the PEALD apparatus comprising: a housing including a reaction chamber in which a deposition reaction is performed; a rotary disk unit installed in the housing and provided with a plurality of susceptors for receiving wafers thereon so as to move the wafers; a gas spray unit mounted on the upper end of the housing above the rotary disk unit, and provided with first reactive gas sprayers, second reactive gas sprayers and inert gas sprayers on a lower surface of a circular disk for spraying respective gases into the housing; a gas feed unit connected to the gas spray unit for supplying first and second reactive gases and a purge gas into the housing; a gas exhaust port formed around the rotary disk unit; and a plasma generator for generating plasma to excite the second reactive gas.
摘要翻译：公开了用于制造半导体器件的PEALD（等离子体增强原子层沉积）装置和PEALD方法，该PEALD装置包括：壳体，包括执行沉积反应的反应室; 旋转盘单元，其安装在壳体中并且设置有用于在其上接收晶片以便移动晶片的多个基座; 安装在旋转盘单元上方的壳体上端的气体喷射单元，并且在圆盘的下表面上设置有第一反应气体喷雾器，第二反应气体喷雾器和惰性气体喷雾器，用于将各种气体喷射到壳体中; 连接到气体喷射单元的气体供给单元，用于将第一和第二反应气体和净化气体供应到壳体中; 形成在旋转盘单元周围的排气口; 以及用于产生等离子体以激发第二反应气体的等离子体发生器。

4. 发明申请

US20060090694A1 Method for atomic layer deposition (ALD) of silicon oxide film 审中-公开
标题翻译：氧化硅膜的原子层沉积（ALD）方法
公开(公告)号：US20060090694A1
公开(公告)日：2006-05-04
申请号：US11305686
申请日：2005-12-16
申请人： Byoung Cho , Yong Kim , Cheol Shin , Won Lee , Jung Kim , Sang Sim
发明人： Byoung Cho , Yong Kim , Cheol Shin , Won Lee , Jung Kim , Sang Sim
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/18 , C23C16/402 , C23C16/4405 , C23C16/45531 , C23C16/45534 , C30B25/14
摘要： The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.
摘要翻译：本发明涉及使用原子层沉积工艺在衬底上形成氧化硅膜的方法。具体地，通过使用Si 2 C 6 C 6源的原子层沉积工艺，在低温和高沉积速率下形成氧化硅膜，这与使用 SiCl 4 SO 4源。在上述方法中使用的原子层沉积装置可以使用HF气体或HF气体和含有-OH基团的气体的混合气体在低温下有效地进行现场清洗。

5. 发明申请

US20050065691A1 Torque control method for an internal combustion engine 审中-公开
标题翻译：内燃机转矩控制方法
公开(公告)号：US20050065691A1
公开(公告)日：2005-03-24
申请号：US10747908
申请日：2003-12-29
申请人： Byoung Cho
发明人： Byoung Cho
IPC分类号： F02D9/02 , F02D11/10 , F02D41/02 , F02D41/10 , G06F7/00
CPC分类号： F02D11/105 , F02D41/0225 , F02D41/2422 , F02D2041/1431 , F02D2250/18
摘要： A torque control method for an internal combustion engine for computing a required torque and controlling a throttle motor on the basis of the required torque includes computing a first required torque on the basis of a depression amount of an acceleration pedal and an engine speed, and computing a second required torque by multiplying an output value of a gradient limit function by an output value of a time delay function. The output value of the gradient limit function is determined on the basis of the first required torque, an acceleration pedal depression amount, an engine speed, and a shift range. The output value of the time delay function is determined on the basis of the shift range.
摘要翻译：用于计算所需扭矩并根据所需扭矩控制节气门马达的内燃机的转矩控制方法包括基于加速踏板的下压量和发动机转速来计算第一所需转矩，以及计算通过将梯度限制函数的输出值乘以时间延迟函数的输出值来执行第二所需转矩。基于第一所需扭矩，加速踏板下压量，发动机转速和换档范围来确定梯度限制功能的输出值。延时功能的输出值根据移位范围确定。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式