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1. 发明申请

US20100289100A1 SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态图像拾取装置，制造固态图像拾取装置的方法和电子装置
公开(公告)号：US20100289100A1
公开(公告)日：2010-11-18
申请号：US12769799
申请日：2010-04-29
申请人： Youichi Otsuka , Kazuaki Ogawa , Taichi Natori , Atsushi Yamamoto , Yasunori Koshino , Hitomi Kamiya , Yoshinori Toumiya , Tadayuki Dofuku , Ina Hori , Takayuki Shoya , Yukihiro Sayama , Masaya Shimoji , Yoshikazu Tanaka
发明人： Youichi Otsuka , Kazuaki Ogawa , Taichi Natori , Atsushi Yamamoto , Yasunori Koshino , Hitomi Kamiya , Yoshinori Toumiya , Tadayuki Dofuku , Ina Hori , Takayuki Shoya , Yukihiro Sayama , Masaya Shimoji , Yoshikazu Tanaka
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H04N5/335 , H01L27/1462 , H01L27/14632 , H01L27/14685
摘要： Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.
摘要翻译：本文公开了一种固态图像拾取装置，其包括可根据所接收的光量产生电荷的固态图像拾取元件，设置在固态图像拾取元件的像素的上侧的透镜覆盖透镜的上侧并且其表面变平的保护膜，以及形成在保护膜的表面并且亲水性高于保护膜内侧的表面膜。

2. 发明授权

US08432010B2 Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus 有权
公开(公告)号：US08432010B2
公开(公告)日：2013-04-30
申请号：US12769799
申请日：2010-04-29
申请人： Youichi Otsuka , Kazuaki Ogawa , Taichi Natori , Atsushi Yamamoto , Yasunori Koshino , Hitomi Kamiya , Yoshinori Toumiya , Tadayuki Dofuku , Ina Hori , Takayuki Shoya , Yukihiro Sayama , Masaya Shimoji , Yoshikazu Tanaka
发明人： Youichi Otsuka , Kazuaki Ogawa , Taichi Natori , Atsushi Yamamoto , Yasunori Koshino , Hitomi Kamiya , Yoshinori Toumiya , Tadayuki Dofuku , Ina Hori , Takayuki Shoya , Yukihiro Sayama , Masaya Shimoji , Yoshikazu Tanaka
IPC分类号： H01L31/14
CPC分类号： H04N5/335 , H01L27/1462 , H01L27/14632 , H01L27/14685
摘要： Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.

3. 发明授权

US08603852B2 Method of manufacturing solid state imaging device, and solid state imaging device 失效
标题翻译：固态成像装置的制造方法以及固态成像装置
公开(公告)号：US08603852B2
公开(公告)日：2013-12-10
申请号：US12792355
申请日：2010-06-02
申请人： Yoshinori Toumiya , Ina Hori , Tadayuki Dofuku , Hitomi Kamiya , Atsushi Yamamoto , Taichi Natori
发明人： Yoshinori Toumiya , Ina Hori , Tadayuki Dofuku , Hitomi Kamiya , Atsushi Yamamoto , Taichi Natori
IPC分类号： H01L21/302
CPC分类号： H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/148
摘要： Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.
摘要翻译：本文公开了一种制造固态成像装置的方法，包括以下步骤：在半导体衬底的光接收区域中形成光接收部分; 在所述半导体衬底的焊盘区域中形成焊盘部分; 在所述光接收部分和所述焊盘部分上形成微透镜材料层; 向所述微透镜材料层提供对应于所述光接收部分的微透镜; 在微透镜材料层上形成低反射材料层; 在所述焊盘部分上蚀刻所述微透镜材料层和所述低反射材料层以形成开口; 并通过常温氧自由基处理赋予低反射材料层的表面和开口的内部亲水性。

4. 发明申请

US20100320554A1 METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE, AND SOLID STATE IMAGING DEVICE 失效
标题翻译：制造固态成像装置的方法和固态成像装置
公开(公告)号：US20100320554A1
公开(公告)日：2010-12-23
申请号：US12792355
申请日：2010-06-02
申请人： Yoshinori Toumiya , Ina Hori , Tadayuki Dofuku , Hitomi Kamiya , Atsushi Yamamoto , Taichi Natori
发明人： Yoshinori Toumiya , Ina Hori , Tadayuki Dofuku , Hitomi Kamiya , Atsushi Yamamoto , Taichi Natori
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14685 , H01L27/148
摘要： Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.
摘要翻译：本文公开了一种制造固态成像装置的方法，包括以下步骤：在半导体衬底的光接收区域中形成光接收部分; 在所述半导体衬底的焊盘区域中形成焊盘部分; 在所述光接收部分和所述焊盘部分上形成微透镜材料层; 向所述微透镜材料层提供对应于所述光接收部分的微透镜; 在微透镜材料层上形成低反射材料层; 在所述焊盘部分上蚀刻所述微透镜材料层和所述低反射材料层以形成开口; 并通过常温氧自由基处理赋予低反射材料层的表面和开口的内部亲水性。

5. 发明授权

US08300128B2 Solid-state image pickup device and electronic apparatus 有权
标题翻译：固态图像拾取装置和电子装置
公开(公告)号：US08300128B2
公开(公告)日：2012-10-30
申请号：US12435502
申请日：2009-05-05
申请人： Yoshinori Toumiya
发明人： Yoshinori Toumiya
IPC分类号： H04N3/14 , H04N5/335
CPC分类号： H01L27/14625 , H01L27/14629 , H01L27/14685
摘要： A solid-state image pickup device includes a semiconductor substrate having a light-incident surface, a plurality of pixels arranged on the light-incident surface, a photodiode arranged in each of the pixels, an insulating film arranged on the semiconductor substrate and configured to cover the photodiodes, wirings embedded in the insulating film, an etching stopper film distant from the lowermost wiring among the wirings, arranged adjacent to the semiconductor substrate, configured to cover at least a region where each of the photodiodes is arranged, and composed of silicon carbide, a trench arranged above each of the photodiodes so as to reach the etching stopper film, and an optical waveguide with which each of the trenches is filled, the optical waveguide having a higher refractive index than the insulating film.
摘要翻译：固态摄像装置包括具有入射面的半导体基板，配置在光入射面上的多个像素，配置在各像素中的光电二极管，配置在半导体基板上的绝缘膜，覆盖光电二极管，嵌入绝缘膜中的布线，与布置在半导体衬底附近的布线之间的距离最下布线的蚀刻阻挡膜，被配置为至少覆盖每个光电二极管布置的区域，并由硅碳化物，布置在每个光电二极管上方以便到达蚀刻阻挡膜的沟槽，以及填充有每个沟槽的光波导，光波导具有比绝缘膜更高的折射率。

6. 发明申请

US20120242873A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，制造固态成像装置的方法和电子装置
公开(公告)号：US20120242873A1
公开(公告)日：2012-09-27
申请号：US13416580
申请日：2012-03-09
申请人： Yoshinori Toumiya , Yoichi Ootsuka
发明人： Yoshinori Toumiya , Yoichi Ootsuka
IPC分类号： H04N9/04 , H05K13/00
CPC分类号： H04N9/045 , H01L27/14605 , H01L27/14627 , H01L27/14629 , H01L27/14685 , H04N5/2254 , H04N5/369 , Y10T29/49002
摘要： A solid-state imaging device includes a pixel that has a photoelectric conversion section which converts incident light into an electric signal; a color filter which is formed corresponding to the pixel; a micro lens which focuses the incident light to the photoelectric conversion section via the color filter; and an in-layer lens which is formed between the color filter and the micro lens and has a refractive index smaller than that of the micro lens.
摘要翻译：固态成像装置包括具有将入射光转换为电信号的光电转换部的像素; 对应于像素形成的滤色器; 微透镜，其通过滤色器将入射光聚焦到光电转换部分; 以及形成在滤色器和微透镜之间并且具有比微透镜的折射率小的折射率的层内透镜。

7. 发明授权

US08003929B2 Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera 有权
标题翻译：具有光波导的固态图像拾取装置，固态图像拾取装置的制造方法和照相机
公开(公告)号：US08003929B2
公开(公告)日：2011-08-23
申请号：US12579593
申请日：2009-10-15
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01L27/00 , H01J3/14
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

8. 发明申请

US20130015545A1 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 审中-公开
标题翻译：固态成像装置，固态成像装置和电子装置的制造方法
公开(公告)号：US20130015545A1
公开(公告)日：2013-01-17
申请号：US13540713
申请日：2012-07-03
申请人： Yoshinori Toumiya , Yoichi Ootsuka , Kensaku Maeda
发明人： Yoshinori Toumiya , Yoichi Ootsuka , Kensaku Maeda
IPC分类号： H01L31/0232
CPC分类号： H01L27/14627 , H01L27/14605 , H01L27/14645 , H01L27/14685
摘要： A solid-state imaging device includes: a substrate on which plural pixels having photoelectric converters are formed; an inorganic microlens made of an inorganic material and formed above the substrate, and an organic microlens made of an organic material and formed adjacent to the inorganic microlens so that a hem portion touches or overlaps a hem portion of the inorganic microlens.
摘要翻译：固态成像装置包括：形成有多个具有光电转换器的像素的基板; 由无机材料制成并形成在基材上方的无机微透镜，以及由有机材料制成并与无机微透镜相邻形成的有机微透镜，使得边缘部分接触或重叠无机微透镜的下摆部分。

9. 发明申请

US20100007779A1 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGING APPARATUS 有权
标题翻译：固态成像装置，其制造方法和成像装置
公开(公告)号：US20100007779A1
公开(公告)日：2010-01-14
申请号：US12496963
申请日：2009-07-02
申请人： Masashi Nakata , Haruhiko Ajisawa , Naotsugu Yoshida , Yasuhiro Nakano , Junichi Furukawa , Yoshinori Toumiya , Junichiro Fujimagari
发明人： Masashi Nakata , Haruhiko Ajisawa , Naotsugu Yoshida , Yasuhiro Nakano , Junichi Furukawa , Yoshinori Toumiya , Junichiro Fujimagari
IPC分类号： H04N5/335 , H01L31/14 , H01L31/02 , H04N5/232 , H01L31/0232
CPC分类号： H01L27/14632 , H01L27/14625 , H01L27/14629 , H01L27/14685 , H01L27/14687
摘要： A solid-state imaging device includes a semiconductor substrate having a pixel region including a photoelectric conversion portion, a wiring portion including a conductor line and disposed on the semiconductor substrate with an insulating film therebetween, a metal pad connected to the conductor line, a pad-coating insulating film coating the metal pad, and a waveguide material layer. The wiring portion and the pad-coating insulating film each have an opening therein over the photoelectric conversion portion, and the openings continue from each other to define a waveguide opening having an open side and a closed side. The waveguide material layer is disposed in the waveguide opening and on the pad-coating insulating film with a passivation layer therebetween. The pad-coating insulating film has a thickness of 50 to 250 nm and a face defining the opening. The face is slanted so as to diverge toward the open side of the opening.
摘要翻译：固态成像装置包括具有包括光电转换部分的像素区域的半导体衬底，包括导体线的布线部分，并且在其间具有绝缘膜的半导体衬底上设置有连接到导体线的金属焊盘，衬垫涂覆金属垫的涂层绝缘膜和波导材料层。布线部分和焊盘覆盖绝缘膜在光电转换部分上各自具有开口，并且开口彼此连续地限定具有开放侧和封闭侧的波导开口。波导材料层设置在波导管开口和焊垫涂层绝缘膜之间，其间具有钝化层。垫涂层绝缘膜具有50至250nm的厚度和限定开口的面。脸部倾斜以朝向开口的开放侧分开。

10. 发明申请

US20080315340A1 SOLID-STATE IMAGING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20080315340A1
公开(公告)日：2008-12-25
申请号：US12102328
申请日：2008-04-14
申请人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
发明人： Kouichi Harada , Yasuhiro Ueda , Nobuhiko Umezu , Kazushi Wada , Yoshinori Toumiya , Takeshi Matsuda
IPC分类号： H01L31/0232
CPC分类号： H01L27/1462 , H01L27/14627
摘要： A solid-state imaging device includes a layer including an on-chip lens above a sensor section, and the layer including the on-chip lens is composed of an inorganic film which transmits ultraviolet light. The layer including the on-chip lens may further include a planarizing film located below the on-chip lens. A method of fabricating a solid-state imaging device includes the steps of forming a planarizing film composed of a first inorganic film, forming a second inorganic film on the planarizing film, forming a lens-shaped resist layer on the second inorganic film, and etching back the resist layer to form an on-chip lens composed of the second inorganic film. The first inorganic film constituting the planarizing film and the second inorganic film constituting the on-chip lens preferably transmit ultraviolet light.
摘要翻译：固态成像装置包括在传感器部分上方具有片上透镜的层，并且包括片上透镜的层由透射紫外光的无机膜构成。包括片上透镜的层还可以包括位于片上透镜下方的平坦化膜。制造固态成像装置的方法包括以下步骤：形成由第一无机膜构成的平坦化膜，在平坦化膜上形成第二无机膜，在第二无机膜上形成透镜形状的抗蚀剂层，以及蚀刻将抗蚀剂层背回以形成由第二无机膜构成的片上透镜。构成平坦化膜的第一无机膜和构成片上透镜的第二无机膜优选透射紫外光。

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