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1. 发明授权

US08003929B2 Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera 有权
标题翻译：具有光波导的固态图像拾取装置，固态图像拾取装置的制造方法和照相机
公开(公告)号：US08003929B2
公开(公告)日：2011-08-23
申请号：US12579593
申请日：2009-10-15
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01L27/00 , H01J3/14
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

2. 发明授权

US08981275B2 Solid-state image pickup device with an optical waveguide, method for manufacturing solid-state image pickup device, and camera 有权
标题翻译：具有光波导的固态图像拾取装置，固态图像拾取装置的制造方法和照相机
公开(公告)号：US08981275B2
公开(公告)日：2015-03-17
申请号：US13181626
申请日：2011-07-13
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01L27/00 , G01J1/44 , H01L27/146 , H01L27/148
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

3. 发明申请

US20110248146A1 SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA 有权
标题翻译：固态图像拾取装置，制造固态图像拾取装置的方法和相机
公开(公告)号：US20110248146A1
公开(公告)日：2011-10-13
申请号：US13163129
申请日：2011-06-17
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01L27/00 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：一种固态图像拾取装置，包括在受光面上的多个像素，在半导体基板的受光面上配置的光电二极管，同时以像素为基准分割，设置在半导体基板上的信号传送部，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

4. 发明申请

US20080135732A1 SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA 有权
标题翻译：固态图像拾取装置，制造固态图像拾取装置的方法和相机
公开(公告)号：US20080135732A1
公开(公告)日：2008-06-12
申请号：US11950680
申请日：2007-12-05
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

5. 发明授权

US07973271B2 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera 有权
标题翻译：固态图像拾取装置，固态图像拾取装置的制造方法和照相机
公开(公告)号：US07973271B2
公开(公告)日：2011-07-05
申请号：US11950680
申请日：2007-12-05
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01L27/00 , H01J3/14 , H01J40/14
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

6. 发明申请

US20100025571A1 SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA 有权
标题翻译：固态图像拾取装置，制造固态图像拾取装置的方法和相机
公开(公告)号：US20100025571A1
公开(公告)日：2010-02-04
申请号：US12579593
申请日：2009-10-15
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01L27/00 , H01L21/00
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

7. 发明授权

US08525098B2 Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera 有权
标题翻译：固态图像拾取装置，固态图像拾取装置的制造方法和照相机
公开(公告)号：US08525098B2
公开(公告)日：2013-09-03
申请号：US13163129
申请日：2011-06-17
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H01J3/14 , H01L27/00
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device including a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：一种固态图像拾取装置，包括在受光面上的多个像素，在半导体基板的受光面上配置的光电二极管，同时以像素为基准分割，设置在半导体基板上的信号传送部，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

8. 发明申请

US20110267512A1 SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND CAMERA 审中-公开
标题翻译：固态图像拾取装置，制造固态图像拾取装置的方法和相机
公开(公告)号：US20110267512A1
公开(公告)日：2011-11-03
申请号：US13181626
申请日：2011-07-13
申请人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
发明人： Yoshinori Toumiya , Keiji Tatani , Haruhiko Ajisawa , Yuji Inoue , Tetsuhiro Iwashita , Hideaki Kato
IPC分类号： H04N5/335 , H01L31/18 , H01L31/0232
CPC分类号： H01L27/14687 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H01L27/14632 , H01L27/14643 , H01L27/14685 , H01L27/14689 , H01L27/148
摘要： A solid-state image pickup device includes a plurality of pixels on a light-receiving surface, photodiodes disposed on the light-receiving surface of a semiconductor substrate while being partitioned on the pixel basis, signal transferring portions which are disposed on the semiconductor substrate and which read signal charges generated and stored in the photodiodes or voltages corresponding to the signal charges, insulating films disposed on the semiconductor substrate while covering the photodiodes, concave portions disposed in the insulating films, pad electrodes disposed on the insulating films, a passivation film which covers inner walls of the concave portions, which is disposed on the pad electrodes, and which has a refractive index higher than that of silicon oxide, and a core layer which is disposed on the passivation film while being filled in the concave portions and which has a refractive index higher than that of silicon oxide.
摘要翻译：固态图像拾取装置包括：光接收表面上的多个像素，设置在半导体衬底的光接收表面上的光电二极管，同时基于像素分隔，设置在半导体衬底上的信号传输部分，其读取产生并存储在光电二极管中的信号电荷或对应于信号电荷的电压，设置在半导体衬底上的绝缘膜同时覆盖光电二极管，设置在绝缘膜中的凹部，设置在绝缘膜上的焊盘电极，钝化膜覆盖设置在焊盘电极上并且折射率高于氧化硅的折射率的凹部的内壁，以及设置在钝化膜上同时填充在凹部中的芯层，折射率高于氧化硅。

9. 发明授权

US08424999B2 Recording apparatus 有权
标题翻译：记录装置
公开(公告)号：US08424999B2
公开(公告)日：2013-04-23
申请号：US12715381
申请日：2010-03-01
申请人： Hideaki Kato
发明人： Hideaki Kato
IPC分类号： B41J2/165
CPC分类号： B41J11/06 , B41J2/155 , B41J19/04
摘要： A recording apparatus includes: a recording head which conducts recording onto a printing medium; a supporter which supports the recording head at a recording position; and a vibration damper interposed between the recording head and the supporter. The recording head includes a recording surface facing a printing medium and a gradient inclined relative to the recording surface. The gradient is provided at an end of the recording surface. The vibration damper abuts: at least one of the recording surface and a surface parallel to the recording surface of the recording head; and the gradient.
摘要翻译：记录装置包括：记录头，其将打印介质进行记录; 在记录位置支撑记录头的支撑件; 以及插入在记录头和支撑件之间的振动阻尼器。记录头包括面向打印介质的记录表面和相对于记录表面倾斜的梯度。梯度设置在记录表面的一端。振动阻尼器抵接在记录表面和与记录头的记录表面平行的表面中的至少一个; 和渐变。

10. 发明申请

US20120171789A1 SOLID ELEMENT DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：固体元件及其制造方法
公开(公告)号：US20120171789A1
公开(公告)日：2012-07-05
申请号：US13419093
申请日：2012-03-13
申请人： Yoshinobu Suehiro , Mitsuhiro Inoue , Hideaki Kato , Kunihiro Hadame , Ryoichi Tohmon , Satoshi Wada , Koichi Ota , Kazuya Aida , Hiroki Watanabe , Yoshinori Yamamoto , Masaaki Ohtsuka , Naruhito Sawanobori
发明人： Yoshinobu Suehiro , Mitsuhiro Inoue , Hideaki Kato , Kunihiro Hadame , Ryoichi Tohmon , Satoshi Wada , Koichi Ota , Kazuya Aida , Hiroki Watanabe , Yoshinori Yamamoto , Masaaki Ohtsuka , Naruhito Sawanobori
IPC分类号： H01L33/52 , H01L33/64
CPC分类号： H01L33/56 , C03B23/20 , C03C8/24 , C03C27/06 , H01L24/17 , H01L24/45 , H01L24/73 , H01L2224/14 , H01L2224/16225 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48237 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2224/92125 , H01L2224/97 , H01L2924/01057 , H01L2924/01322 , H01L2924/12035 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2924/181 , H01L2924/3025 , H01L2933/005 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A method of making a solid element device that includes a solid element, an element mount part on which the solid element is mounted and which has a thermal conductivity of not less than 100 W/mK, an external terminal provided separately from the element mount part and electrically connected to the solid element, and a glass sealing part directly contacting and covering the solid element for sealing the solid element, includes pressing a glass material at a temperature higher than a yield point of the glass material for forming the glass sealing part.
摘要翻译：一种固体元件装置的制造方法，该固体元件装置包括固体元件，安装有固体元件的元件安装部件，其导热率不小于100W / mK，与元件安装部件分开设置的外部端子并且与固体元件电连接，并且直接接触和覆盖固体元件以密封固体元件的玻璃密封部件包括在玻璃材料的高于用于形成玻璃密封部分的玻璃材料的屈服点的温度下挤压玻璃材料。

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