会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Conductive liquid-based latching switch device
    • 导电液体闭锁开关装置
    • US06717495B2
    • 2004-04-06
    • US10080643
    • 2002-02-21
    • You KondohTsutomu Takanaka
    • You KondohTsutomu Takanaka
    • H01H2900
    • H01H1/0036H01H29/28H01H2029/008
    • The latching switch device includes a passage, a first cavity, a second cavity, a channel extending from each cavity to the passage, non-conductive fluid located the cavities, conductive liquid located in the passage, a first electrode, a second electrode and a latching structure associated with each channel. The passage is elongate. The channels are spatially separated from one another along the length of the passage. The electrodes are in electrical contact with the conductive liquid and are located on opposite sides of one of the channels. The conductive liquid includes free surfaces. Each latching structure includes energy barriers located in the passage on opposite sides of the channel. The energy barriers interact with the free surfaces of the conductive liquid to hold the free surfaces apart from one another.
    • 锁定开关装置包括通道,第一空腔,第二空腔,从每个空腔延伸到通道的通道,位于空腔中的非导电流体,位于通道中的导电液体,第一电极,第二电极和 与每个通道相关的锁定结构。 通道是细长的。 通道沿着通道的长度在空间上彼此分开。 电极与导电液体电接触并且位于其中一个通道的相对侧上。 导电液体包括自由表面。 每个锁定结构包括位于通道的相对侧上的通道中的能量障碍物。 能量障碍物与导电液体的自由表面相互作用以保持自由表面彼此分开。
    • 3. 发明授权
    • Optical frequency conversion systems and methods
    • 光变频系统及方法
    • US06940638B2
    • 2005-09-06
    • US10414168
    • 2003-04-15
    • You KondohNorihide YamadaKenichi Abiko
    • You KondohNorihide YamadaKenichi Abiko
    • G02F1/01G02F2/02
    • G02F2/02
    • Optical frequency conversion systems and methods are described. In one aspect, an optical frequency conversion system for generating a frequency-shifted replica of an input optical signal includes a phase modulation control signal generator and an optical phase modulator. The phase modulation control signal generator receives the input optical signal and generates a phase modulation control signal characterized by a sequence of phase shift control portions synchronized to the input optical signal. The optical phase modulator receives the input optical signal and phase shifts the input optical signal in accordance with the phase shift control portions of the phase modulation control signal to generate a frequency-converted replica of the input optical signal. An optical frequency conversion method for generating a frequency-shifted replica of an input optical signal also is described.
    • 描述了光学变频系统和方法。 一方面,用于产生输入光信号的频移副本的光频变换系统包括相位调制控制信号发生器和光相位调制器。 相位调制控制信号发生器接收输入光信号并产生相位调制控制信号,其特征在于与输入光信号同步的一系列相移控制部分。 光相位调制器接收输入光信号,并根据相位调制控制信号的相移控制部分对输入光信号进行相移,以产生输入光信号的频率转换副本。 还描述了用于产生输入光信号的频移副本的光频变换方法。
    • 4. 发明授权
    • Magnetic coupled actuator
    • 磁耦合执行器
    • US07511905B2
    • 2009-03-31
    • US12031906
    • 2008-02-15
    • Kaoru MatsukiYou Kondoh
    • Kaoru MatsukiYou Kondoh
    • G02B7/02G02B15/14
    • G02B7/08A61B1/00188H01F7/0242
    • A magnetic coupled actuator includes a lens which is movable in an optical axis direction AX, a lens frame which is coupled with the lens, a lens barrel which seals and accommodates the movable lens and the lens frame to be airtight, a permanent magnet which is disposed at an outer side of the lens barrel, facing the lens frame, and is disposed to be movable in the optical axis AX direction, and a wire of which, one end is coupled with the permanent magnet, and which moves the permanent magnet in the optical axis AX direction. At least one of the lens frame and the permanent magnet is a magnetic field generating means.
    • 磁耦合致动器包括可在光轴方向AX上移动的透镜,与透镜耦合的透镜框,密封并容纳可移动透镜和透镜框以保持气密的透镜筒;永磁体, 设置在透镜镜筒的外侧,面向透镜框架,并且设置成可在光轴AX方向上移动,并且其一端与永磁体联接,并且使永磁体移动 光轴AX方向。 透镜框和永磁体中的至少一个是磁场产生装置。
    • 5. 发明授权
    • Multi-substrate liquid metal high-frequency switching device
    • 多基板液态金属高频开关装置
    • US06927350B2
    • 2005-08-09
    • US10738539
    • 2003-12-16
    • You KondohTsutomu Takenaka
    • You KondohTsutomu Takenaka
    • H01H11/02H01H1/00H01H29/02H01H29/28H01H29/30H01H61/01H01H61/02H01H29/00
    • H01H29/28H01H1/0036H01H61/02H01H2029/008H01H2061/006
    • A device and manufacturing method are provided that comprises forming first and second substrates joined together and comprising a main channel provided in at least one of the substrates and a connecting channel provided in at least one of the substrates, the connecting channel connected to the main channel, and the main channel having spaced apart electrodes and at least partially filled with liquid metal. The method further comprises forming a heater substrate comprising a suspended heater element in fluid communication with the connecting channel, the suspended heater element operable to cause a fluid non-conductor to separate the liquid metal and selectively interconnect the electrodes, and providing a high-frequency signal loss reduction structure between the main channel and the heater substrate.
    • 提供了一种装置和制造方法,包括:形成连接在一起的第一和第二基板,并且包括设置在至少一个基板中的主通道和设置在至少一个基板中的连接通道,连接通道连接到主通道 ,并且主通道具有间隔开的电极并且至少部分地填充有液态金属。 该方法还包括形成加热器基板,该加热器基板包括与连接通道流体连通的悬置加热器元件,该悬挂加热器元件可操作以使流体非导体分离液态金属并选择性地互连电极,并提供高频 主通道和加热器基板之间的信号损失减小结构。
    • 9. 发明授权
    • Nitride semiconductor light emitting device having a silver p-contact
    • 具有银p接触的氮化物半导体发光器件
    • US06194743B1
    • 2001-02-27
    • US09212150
    • 1998-12-15
    • You KondohSatoshi WatanabeYawara KanekoShigeru NakagawaNorihide Yamada
    • You KondohSatoshi WatanabeYawara KanekoShigeru NakagawaNorihide Yamada
    • H01L3300
    • H01L33/42H01L33/40H01L2224/4847
    • A light emitting device constructed on a substrate. The device includes an n-type semiconductor layer in contact with the substrate, an active layer for generating light, the active layer being in electrical contact with the n-type semiconductor layer. A p-type semiconductor layer is in electrical contact with the active layer, and a p-electrode is in electrical contact with the p-type semiconductor layer. The p-electrode includes a layer of silver in contact with the p-type semiconductor layer. In the preferred embodiment of the present invention, the n-type semiconductor layer and the p-type semiconductor layer are constructed from group III nitride semiconductor materials. In one embodiment of the invention, the silver layer is sufficiently thin to be transparent. In other embodiments, the silver layer is thick enough to reflect most of the light incident thereon. A fixation layer is preferably provided over the silver layer. The fixation layer may be a dielectric or a conductor, the choice depending on whether or not the silver layer is transparent.
    • 构造在基板上的发光器件。 该器件包括与衬底接触的n型半导体层,用于产生光的有源层,有源层与n型半导体层电接触。 p型半导体层与有源层电接触,p电极与p型半导体层电接触。 p电极包括与p型半导体层接触的银层。 在本发明的优选实施例中,n型半导体层和p型半导体层由III族氮化物半导体材料构成。 在本发明的一个实施方案中,银层足够薄以使其透明。 在其它实施例中,银层足够厚以反射入射到其上的大部分光。 优选在银层上设置固定层。 固定层可以是电介质或导体,这取决于银层是否透明。