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1. 发明授权

US5747780A Apparatus for conveying and processing a wafer in a physically contact-free state 失效
标题翻译：用于在物理接触的状态下输送和处理晶片的装置
公开(公告)号：US5747780A
公开(公告)日：1998-05-05
申请号：US600639
申请日：1996-02-13
申请人： Yoshiyuki Shioyama , Masako Hori , Koji Kimura
发明人： Yoshiyuki Shioyama , Masako Hori , Koji Kimura
IPC分类号： B65G54/02 , B65G43/00 , B65G49/07 , H01L21/677 , H02K41/02 , H05B6/10
CPC分类号： H01L21/67784 , Y10S414/137 , Y10S414/138 , Y10S414/14
摘要： At the front side of a wafer cassette fitted to a wafer feeding unit of a magnetic levitation wafer conveying device, a wafer stopper for preventing the wafer waiting in the wafer cassette from popping out is provided. The wafer supplied from the magnetic levitation conveying device is supplied into the reaction chamber by magnetic force, and is directly held in the reaction chamber by this magnetic force. Since the wafer stopper is positioned between the wafer cassette fitted in the wafer feeding unit and the starting end of the wafer conveying route, the wafer waiting in the wafer cassette next to the wafer to be conveyed is prevented from popping out together with the wafer to be conveyed. Moreover, the wafer conveyed by the magnetic force can be directly held in the reaction chamber in heated state.
摘要翻译：在安装在磁悬浮晶片输送装置的晶片供给单元的晶片盒的前侧，设置有用于防止晶片盒中的晶片等待突出的晶片止动器。从磁悬浮输送装置供给的晶片通过磁力供给到反应室，并通过该磁力直接保持在反应室内。由于晶片止动器位于装配在晶片馈送单元中的晶片盒和晶片输送路径的起始端之间，因此可以防止在晶片盒中等待被输送晶片的晶片与晶片一起弹出被传达。此外，通过磁力传送的晶片可以在加热状态下直接保持在反应室中。

2. 发明申请

US20060163684A1 Solid-state image pickup apparatus 失效
公开(公告)号：US20060163684A1
公开(公告)日：2006-07-27
申请号：US11387819
申请日：2006-03-24
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/06
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.

3. 发明授权

US07224003B2 Solid-state image pickup apparatus 失效
标题翻译：固态摄像装置
公开(公告)号：US07224003B2
公开(公告)日：2007-05-29
申请号：US11387819
申请日：2006-03-24
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/0328
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译：本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极形成晶体管。由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

4. 发明授权

US07042061B2 Solid-state image pickup apparatus 失效
标题翻译：固态摄像装置
公开(公告)号：US07042061B2
公开(公告)日：2006-05-09
申请号：US10727515
申请日：2003-12-05
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H01L31/06 , H01L27/148
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译：本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。根据本发明的固态图像拾取装置包括具有用于构成光电转换区域的用于扩散层的表面的p型硅衬底和读取MOS场效应的漏极形成晶体管。由p型扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在扩散层和漏极之间。与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p0 +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

5. 发明授权

US06690423B1 Solid-state image pickup apparatus 失效
标题翻译：固态摄像装置
公开(公告)号：US06690423B1
公开(公告)日：2004-02-10
申请号：US09272337
申请日：1999-03-19
申请人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
发明人： Nobuo Nakamura , Hisanori Ihara , Ikuko Inoue , Hidenori Shibata , Akiko Nomachi , Yoshiyuki Shioyama , Hidetoshi Nozaki , Masako Hori , Akira Makabe , Hiroshi Naruse , Hideki Inokuma , Seigo Abe , Hirofumi Yamashita , Tetsuya Yamaguchi
IPC分类号： H04N314
CPC分类号： H01L27/14621 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L31/035236 , Y10S257/927
摘要： The present invention provides a solid-state image pickup apparatus which is able to easily discharge signal charges in a signal accumulating section and which is free from reduction in the dynamic range of the element, thermal noise in a dark state, an image-lag and so forth even if the pixel size of the MOS solid-state image pickup apparatus is reduced, the voltage of a reading gate is lowered and the concentration in the well is raised. The solid-state image pickup apparatus according to the present invention incorporates a p-type silicon substrate having a surface on which a p+ diffusion layer for constituting a photoelectric conversion region and a drain of a reading MOS field effect transistor are formed. A signal accumulating section formed by an n-type diffusion layer is formed below the p+ diffusion layer. A gate electrode of the MOS field effect transistor is, on the surface of the substrate, formed between the p+ diffusion layer and the drain. The position of an end of the signal accumulating section adjacent to the gate electrode of the MOS transistor extends over the end of the reading gate electrode of the p+ diffusion layer to a position below the gate electrode.
摘要翻译：本发明提供一种固态摄像装置，其能够容易地放大信号存储部中的信号电荷，并且不会降低元件的动态范围，处于黑暗状态的热噪声，图像滞后和所以即使MOS固态摄像装置的像素尺寸减小，读门电压降低，也增加了阱中的浓度。根据本发明的固态摄像装置包括具有表面的p型硅衬底，在其上形成用于构成光电转换区域的p +扩散层和读取MOS场效应晶体管的漏极。由p +扩散层的下方形成由n型扩散层形成的信号累积部。 MOS场效应晶体管的栅电极在衬底的表面上形成在p +扩散层和漏极之间。与MOS晶体管的栅电极相邻的信号累积部分的端部的位置在p +扩散层的读取栅电极的末端延伸到栅电极下方的位置。

6. 发明授权

US5637894A Solid state image sensor device with single-layered transfer electrodes 失效
标题翻译：具有单层转移电极的固态图像传感器装置
公开(公告)号：US5637894A
公开(公告)日：1997-06-10
申请号：US544834
申请日：1995-10-18
申请人： Masako Hori , Masaaki Ogawa , Hidenori Shibata , Yoshiyuki Shioyama , Yutaka Koshino
发明人： Masako Hori , Masaaki Ogawa , Hidenori Shibata , Yoshiyuki Shioyama , Yutaka Koshino
IPC分类号： G09F9/00 , H01L21/339 , H01L27/148 , H01L29/762
CPC分类号： H01L27/14831
摘要： A charge coupled device, together with a method for manufacturing the device, is provided which can eliminate a conventional problem, that is, the remaining of a light-receiving film at a great step area and a consequent lowering of a sensitivity resulting from the shutting-off of a portion of incident light. In the charge coupled device, insulating areas are formed in substantially strip-like array on a silicon substrate. Respective transfer electrodes are formed on a gate insulating film on a semiconductor substrate with an insulating areas interposed. The respective phase transfer electrodes are electrically separated by the insulating area. By doing so, the respective phase transfer electrodes can be formed on the same plane without leaving a greater step. This can achieve a thinned light shielding film.
摘要翻译：提供了电荷耦合器件，以及用于制造器件的方法，其可以消除常规问题，即，在大步进区域处的光接收膜的剩余部分以及由此导致的灵敏度的降低一部分入射光。在电荷耦合器件中，绝缘区域在硅衬底上形成为大致带状的阵列。各个传输电极形成在半导体衬底上的绝缘膜上的绝缘膜上。各个相转移电极被绝缘区域电隔离。通过这样做，各个相转移电极可以形成在同一平面上，而不会留下更大的台阶。这可以实现减薄的遮光膜。

7. 发明授权

US06335220B1 Solid state imaging device with four-phase charge-coupled device and method of manufacturing the same 失效
标题翻译：具有四相电荷耦合器件的固态成像器件及其制造方法
公开(公告)号：US06335220B1
公开(公告)日：2002-01-01
申请号：US09479423
申请日：2000-01-07
申请人： Yoshiyuki Shioyama , Hidenori Shibata
发明人： Yoshiyuki Shioyama , Hidenori Shibata
IPC分类号： H01L2100
CPC分类号： H01L27/14812
摘要： In a high density solid-state imaging device, of four charge transfer electrodes formed on a semiconductor substrate via a gate insulating film, a first electrode, a fourth electrode, and a part of a second electrode are made of a first conductive film, and a third electrode and the remaining portion of the second electrode are made of a second conductive film. In the second electrode, the first conductive film is joined to the second conductive film. An oxidation film formed by thermally oxidizing the first conductive film isolates the first electrode from the second electrode, the second electrode from the third electrode, and the third electrode from the fourth electrode. The end of the second conductive film is formed so as to locate on the oxidation film on the first conductive film.
摘要翻译：在高密度固态成像装置中，通过栅极绝缘膜形成在半导体衬底上的四个电荷转移电极，第一电极，第四电极和第二电极的一部分由第一导电膜制成，并且第三电极，第二电极的剩余部分由第二导电膜制成。在第二电极中，第一导电膜与第二导电膜接合。通过热氧化第一导电膜形成的氧化膜将第一电极与第二电极隔离，第二电极与第三电极隔离，第三电极从第四电极隔离。第二导电膜的端部形成为位于第一导电膜上的氧化膜上。

8. 发明授权

US07043384B2 Failure detection system, failure detection method, and computer program product 失效
标题翻译：故障检测系统，故障检测方法和计算机程序产品
公开(公告)号：US07043384B2
公开(公告)日：2006-05-09
申请号：US10784819
申请日：2004-02-24
申请人： Hiroshi Matsushita , Kenichi Kadota , Yoshiyuki Shioyama
发明人： Hiroshi Matsushita , Kenichi Kadota , Yoshiyuki Shioyama
IPC分类号： G01R31/28 , G01R31/00
CPC分类号： G11C29/006 , G01R31/01 , G11C29/56 , G11C2029/0403 , G11C2029/5604
摘要： A failure detection system includes a wafer test information input unit which acquires pass/fail maps for wafers for a plurality of types of semiconductor devices, displaying failure chip areas based on results of electrical tests performed on chips; an analogous test information input unit which classifies the electrical tests into analogous electrical tests with regard to analogous failures among the semiconductor devices; a subarea setting unit which assigns subareas common to the types of semiconductor devices on a wafer surface; a characteristic quantity calculation unit which statistically calculates characteristic quantities based on a number of the failure chip areas included in the subareas for each analogous electrical test; and a categorization unit which obtains correlation coefficients between the characteristic quantities corresponding to the subareas, and classifies clustering failure patterns of the failure chip areas into categories by comparing the correlation coefficients with a threshold.
摘要翻译：故障检测系统包括晶片测试信息输入单元，其获取多种类型的半导体器件的晶片的通过/失败映射，基于对芯片执行的电测试的结果显示故障芯片区域; 类似的测试信息输入单元，其将电测试分类为关于半导体器件中的类似故障的类似电测试; 子区域设定单元，其在晶片表面上分配与所述半导体器件的类型相同的子区域; 特征量计算单元，其基于每个类似电测试在所述子区域中包括的故障码片区域的数量来统计计算特征量; 以及分类单元，其获得与所述子区域相对应的特征量之间的相关系数，并且通过将所述相关系数与阈值进行比较来将所述故障码片区域的聚类故障模式分类。

9. 发明授权

US6028629A Solid-state imaging device and method of manufacturing the same 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US6028629A
公开(公告)日：2000-02-22
申请号：US829658
申请日：1997-03-31
申请人： Yoshiyuki Shioyama , Hidenori Shibata
发明人： Yoshiyuki Shioyama , Hidenori Shibata
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/369 , H04N5/372 , H04N3/14
CPC分类号： H01L27/14812
摘要： In a high density solid-state imaging device, of four charge transfer electrodes formed on a semiconductor substrate via a gate insulating film, a first electrode, a fourth electrode, and a part of a second electrode are made of a first conductive film, and a third electrode and the remaining portion of the second electrode are made of a second conductive film. In the second electrode, the first conductive film is joined to the second conductive film. An oxidation film formed by thermally oxidizing the first conductive film isolates the first electrode from the second electrode, the second electrode from the third electrode, and the third electrode from the fourth electrode. The end of the second conductive film is formed so as to locate on the oxidation film on the first conductive film.
摘要翻译：在高密度固态成像装置中，通过栅极绝缘膜形成在半导体衬底上的四个电荷转移电极，第一电极，第四电极和第二电极的一部分由第一导电膜制成，并且第三电极，第二电极的剩余部分由第二导电膜制成。在第二电极中，第一导电膜与第二导电膜接合。通过热氧化第一导电膜形成的氧化膜将第一电极与第二电极隔离，第二电极与第三电极隔离，第三电极从第四电极隔离。第二导电膜的端部形成为位于第一导电膜上的氧化膜上。

10. 发明授权

US5731601A Four-phase driving CCD solid-state imaging device with a two-layer transfer gate electrode 失效
标题翻译：具有双层传输栅电极的四相驱动CCD固态成像器件
公开(公告)号：US5731601A
公开(公告)日：1998-03-24
申请号：US769380
申请日：1996-12-19
申请人： Yoshiyuki Shioyama , Hidenori Shibata
发明人： Yoshiyuki Shioyama , Hidenori Shibata
IPC分类号： H01L27/148 , H01L29/423 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/369 , H04N5/3728 , H01L29/768
CPC分类号： H01L27/14812 , H01L29/42396
摘要： According to the present invention, there is provided a solid-state imaging device that has a two-layer transfer electrode structure and is based on a four-phase driving all-pixel reading scheme. The transfer gate electrodes for taking the signal charges out of the photodiode PD and transferring them vertically are formed so that the polysilicon electrodes of a first layer and the polysilicon electrodes of a second layer may each have a specific gate length and be in contact with the gate insulating film on a silicon substrate. If four-phase transfer clocks are .phi.1 to .phi.4, the clocks will be applied to the transfer gate electrodes 31, 32 repeatedly in this order for a single pixel (photodiode PD): the second-layer electrode (.phi.2)--the second-layer electrode (.phi.3)--the first-layer electrode (.phi.4)--the first-layer electrode (.phi.1).
摘要翻译：根据本发明，提供了一种具有双层转移电极结构并且基于四相驱动全像素读取方案的固态成像装置。用于将信号电荷从光电二极管PD中垂直转移的传输栅电极形成为使得第一层的多晶硅电极和第二层的多晶硅电极可以各自具有特定的栅极长度并且与栅极绝缘膜在硅衬底上。如果四相传输时钟为phi 1至phi 4，则时钟将按顺序反复施加到传输栅电极31,32，用于单个像素（光电二极管PD）：第二层电极（phi 2）第二层电极（phi 3） - 第一层电极（phi 4） - 第一层电极（phi 1）。

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