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1. 发明申请

US20120305188A1 PLASMA PROCESSING APPARATUS AND GAS SUPPLY METHOD THEREFOR 有权
标题翻译：等离子体处理装置及其气体供应方法
公开(公告)号：US20120305188A1
公开(公告)日：2012-12-06
申请号：US13483843
申请日：2012-05-30
申请人： Yoshiyuki KATO , Norihiko AMIKURA , Risako MIYOSHI , Kimihiro FUKASAWA
发明人： Yoshiyuki KATO , Norihiko AMIKURA , Risako MIYOSHI , Kimihiro FUKASAWA
IPC分类号： F17D3/00 , H05H1/24 , B44C1/22
CPC分类号： H01J37/32449 , C23C16/45523 , C23C16/45525 , C23C16/52 , H01J37/3244 , Y10T137/0368
摘要： It is possible to prevent processing gases from being mixed when alternately supplying the processing gases while alternately switching the processing gases and to suppressed a transient phenomenon more efficiently as compared to conventional cases. When supplying at least two kinds of processing gases (e.g., a C4F6 gas and a C4F8 gas) into a processing chamber while alternately switching the at least two kinds of processing gases during a plasma process on a wafer, the supply of each processing gas can be alternately turned on and off by alternately setting an instruction flow rate of a mass flow controller to be a predetermined flow rate and a zero flow rate while a downstream opening/closing valve provided at a downstream side of the mass flow controller is open.
摘要翻译：与常规情况相比，可以在交替地切换处理气体的同时交替地供给处理气体并且与现有技术相比更有效地抑制瞬态现象，可以防止加工气体混合。当在晶片上等离子体处理期间交替地切换至少两种处理气体时，将至少两种处理气体（例如，C 4 F 6气体和C 4 F 8气体）供应到处理室中，每个处理气体的供应可以通过在设置在质量流量控制器的下游侧的下游打开/关闭阀打开的同时将质量流量控制器的指令流量交替地设定为预定流量和零流量来交替地接通和关闭。

2. 发明申请

US20120031266A1 EXHAUSTING METHOD AND GAS PROCESSING APPARATUS 有权
标题翻译：排气方法和气体加工装置
公开(公告)号：US20120031266A1
公开(公告)日：2012-02-09
申请号：US13205077
申请日：2011-08-08
申请人： Norihiko AMIKURA , Risako MIYOSHI
发明人： Norihiko AMIKURA , Risako MIYOSHI
IPC分类号： B01D53/30
CPC分类号： B01D53/30 , B01D2258/0216
摘要： An exhausting method includes determining an exhaust flow rate of a process gas to be a predetermined value that is less than or equal to a gas flow rate corresponding to a maximum process capability of a purification system when the process gas is diluted to a lower explosive limit; calculating a pressure drop amount per unit time to maintain the determined exhaust flow rate of the process gas, based on a relation between the exhaust flow rate and the pressure drop amount per unit time; and evacuating an inside of the chamber to maintain the determined exhaust flow rate, while controlling the pressure through an automatic pressure control valve by setting a target pressure value to be updated as a control value of the automatic pressure control valve at every predetermined time interval so as to achieve a calculated pressure drop amount per unit time.
摘要翻译：排气方法包括将处理气体的排气流量确定为小于或等于当处理气体稀释至较低爆炸极限时与净化系统的最大过程能力相对应的气体流量的预定值 ; 基于每单位时间的排气流量与压降量之间的关系，计算每单位时间的压降量以维持所确定的处理气体的排气流量; 并且通过将目标压力值设定为每隔预定时间间隔的自动压力控制阀的控制值，同时通过自动压力控制阀来控制压力，从而保持所确定的排气流量，从而保持确定的排气流量。以实现每单位时间的计算压降量。

3. 发明申请

US20080286491A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20080286491A1
公开(公告)日：2008-11-20
申请号：US12022533
申请日：2008-01-30
申请人： Eiji TAKAHASHI , Norihiko AMIKURA
发明人： Eiji TAKAHASHI , Norihiko AMIKURA
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/67069 , H01L21/02071
摘要： A substrate processing method capable of controlling the internal pressure of a processing chamber to a high pressure and exhausting gases within the processing chamber at a high rate. The substrate processing method is for use in a substrate processing apparatus having a processing chamber, a supply unit supplying a processing gas into the processing chamber, a first pipe connected to the processing chamber at one end thereof, a turbo molecular pump disposed in the first pipe, a first shutoff valve disposed between the processing chamber and the turbo molecular pump in the first pipe, a second pipe connected to the processing chamber at one end thereof, a pressure control valve disposed in the second pipe, and a dry pump connected to the other end of the first pipe and to the other end of the second pipe. The substrate processing method comprises a pressure control step of controlling the internal pressure of the processing chamber using the pressure control valve after closing the first shutoff valve when performing a treatment on a substrate housed in the processing chamber; a first exhaust step of exhausting gases within the processing chamber through the second pipe using the dry pump by opening the pressure control valve after performing the treatment on the substrate; and a second exhaust step of exhausting gases within the processing chamber through the first pipe using the turbo molecular pump by closing the pressure control valve and opening the first shutoff valve after the first exhaust step.
摘要翻译：一种基板处理方法，其能够以高速率将处理室的内部压力控制到高压并且在处理室内排出气体。基板处理方法用于具有处理室的基板处理装置，向处理室供给处理气体的供给单元，在其一端与处理室连接的第一管，设置在第一个中的涡轮分子泵管道，设置在第一管中的处理室和涡轮分子泵之间的第一截止阀，在其一端连接到处理室的第二管，设置在第二管中的压力控制阀，以及连接到第一管的另一端和第二管的另一端。基板处理方法包括压力控制步骤，当在容纳在处理室中的基板上进行处理时，在关闭第一截止阀之后使用压力控制阀来控制处理室的内部压力; 第一排气步骤，通过在对所述基板进行处理之后打开所述压力控制阀，通过所述干式泵通过所述第二管排出所述处理室内的气体; 以及第二排气步骤，通过关闭所述压力控制阀并在所述第一排气步骤之后打开所述第一截止阀，通过所述涡轮分子泵通过所述第一管排出所述处理室内的气体。

4. 发明申请

US20170097034A1 BOLT-LOCKING APPARATUS, MOUNTING METHOD THEREOF AND MOUNTING JIG 审中-公开
公开(公告)号：US20170097034A1
公开(公告)日：2017-04-06
申请号：US15289438
申请日：2016-10-10
申请人： Norihiko Amikura , Satoshi Kagatsume , Masahiko Satoh , Yukio Naito , Satoshi Muto , Tomohiro Nakata , Tsutomu Shinohara , Michio Yamaji
发明人： Norihiko AMIKURA , Satoshi KAGATSUME , Masahiko Satoh , Yukio Naito , Satoshi Muto , Tomohiro Nakata , Tsutomu Shinohara , Michio Yamaji
IPC分类号： F16B39/10
CPC分类号： F16B39/101 , F16B39/103 , Y10T29/49826 , Y10T29/53 , Y10T403/50
摘要： A bolt-locking apparatus includes a plurality of fitting members 2 and 3 which are relatively non-rotatably fitted to heads of a plurality of bolts 5, and an engaging member 4 fitted to the plurality of fitting members 2 and 3 such that the engaging member 4 straddles the fitting members 2 and 3. Outer peripheral surfaces 2b and 3b of the fitting members 2 and 3 are non-circular in shape. The engaging member 4 includes a plurality of engaging holes (non-circular engaging portions) 8a and 8b which correspond to the non-circular outer peripheral surfaces 2b and 3b of the plurality of fitting members 2 and 3.

5. 发明申请

US20120247673A1 ELECTRODE HAVING GAS DISCHARGE FUNCTION AND PLASMA PROCESSING APPARATUS 有权
标题翻译：具有气体放电功能和等离子体处理装置的电极
公开(公告)号：US20120247673A1
公开(公告)日：2012-10-04
申请号：US13435689
申请日：2012-03-30
申请人： Daisuke HAYASHI , Toshifumi ISHIDA , Norihiko AMIKURA
发明人： Daisuke HAYASHI , Toshifumi ISHIDA , Norihiko AMIKURA
IPC分类号： H01J1/02 , H05H1/24 , B44C1/22 , C23C16/50 , C23C16/455
CPC分类号： H01J37/32449 , C23C16/455 , C23C16/45563 , C23C16/45565 , C23C16/45576 , C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/12 , H01J1/00 , H01J1/02 , H01J37/32532
摘要： An electrode having a gas discharge function, where the degree of freedom related to a maximum gas flow rate is abundant, an electrode cover member may be thinned, and a change of a gas behavior according to time is difficult to be generated in a processing chamber during gas introduction. The electrode includes: a base material having a plurality of gas holes; and an electrode cover member having a plurality of gas holes respectively corresponding to the plurality of gas holes of the base material in a one-to-one manner, fixed to the base material, and disposed facing a processing space in which the object is plasma-processed, wherein a gas hole diameter of the electrode cover member is larger than a gas hole diameter of the base material.
摘要翻译：具有气体放电功能的电极，其中与最大气体流量相关的自由度丰富，电极盖构件可能变薄，并且在处理室中难以产生根据时间的气体性能的变化在气体引入期间。电极包括：具有多个气孔的基材; 以及电极盖构件，其具有分别对应于所述基材的所述多个气孔的多个气孔，所述多个气孔以一对一的方式固定到所述基材上，并且面对所述物体为等离子体的处理空间其特征在于，所述电极盖部件的气孔直径大于所述基材的气孔直径。

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