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1. 发明申请

US20070059601A1 Negative electrode for lithium secondary cell, lithium secondary cell employing the negative electrode, film deposition material b used for forming negative electrode, and process for producing negative electrode 审中-公开
标题翻译：锂二次电池用负极，负极用锂二次电池，负极形成用成膜材料b，负极制造工序
公开(公告)号：US20070059601A1
公开(公告)日：2007-03-15
申请号：US10554397
申请日：2004-04-16
申请人： Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma
发明人： Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma
IPC分类号： H01M4/48 , C23C14/34
CPC分类号： H01M4/131 , H01M4/0404 , H01M4/0421 , H01M4/0426 , H01M4/0471 , H01M4/1391 , H01M4/485 , H01M4/525 , H01M10/0525 , H01M2004/027
摘要： Greatly improved is an initial efficiency, which would be otherwise low as a fault, without reducing a magnitude of an initial charge capacity, which is a feature of a lithium secondary battery using an SiO as an negative electrode. A cycle characteristic is improved. In order to realize the improvements, a thin film of silicon oxide formed by vacuum vapor deposition or sputtering as an negative electrode active material layer 32 on a surface of a collector 31. The thin film is formed preferably by means of an ion plating method. The silicon oxide is SiOx (0.5≦x
摘要翻译：作为故障，初始效率大大提高，不会降低初始充电容量的大小，这是使用SiO作为负极的锂二次电池的特征。循环特性得到改善。为了实现改进，通过真空蒸镀或溅射形成的氧化硅薄膜作为集电体31的表面上的负极活性物质层32。优选通过离子镀法形成薄膜。氧化硅为SiO x（0.5 <= x <1.0），膜厚为0.1〜50μm的范围。使用的真空气相沉积源是在1.0％或更小的搅拌器试验中具有重量减少百分比（克力值）的SiO沉积物。在真空气相沉积中，在真空或惰性气氛中对集电体31的表面进行清洁处理，之后在集电体的表面上形成氧化硅薄膜，而不会将集电体的表面暴露于空气气氛。

2. 发明申请

US20080095930A1 Method For Producing Negative Electrode For Lithium Secondary Battery 审中-公开
标题翻译：锂二次电池负极生产方法
公开(公告)号：US20080095930A1
公开(公告)日：2008-04-24
申请号：US11575466
申请日：2005-09-05
申请人： Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma
发明人： Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma
IPC分类号： B05D5/12
CPC分类号： H01M4/0426 , H01M4/1391 , H01M4/485 , H01M4/525 , H01M4/661 , H01M10/0525 , H01M2004/021 , H01M2004/027 , Y10T29/49115
摘要： The lowness of the initial efficiency which is a drawback of lithium secondary batteries wherein a SiO negative electrode is used is largely made better without hindering a large initial charge capacity peculiar to the lithium secondary batteries. A fall in the cycle characteristic when the thickness of the SiO layer is made large is prevented. To realize these matters, a thin film of SiO is formed, as a negative electrode active material layer, on the surface of a current collector by vacuum evaporation or sputtering. The film is preferably formed by an ion plating process. The thickness of the SiO thin film is set to 5 μm or more. The surface roughness of the current collector is set to follows: the maximum height roughness Rz=5.0 or more. After the formation of the thin film, the film is thermally treated in a nonoxidative atmosphere.
摘要翻译：作为使用了SiO负极的锂二次电池的缺点的初始效率的低度大大地变得更好，而不会妨碍锂二次电池特有的大的初始充电能力。防止了当SiO层的厚度变大时的循环特性的下降。为了实现这些目的，通过真空蒸发或溅射在集电体的表面上形成SiO的薄膜作为负极活性物质层。该膜优选通过离子镀工艺形成。 SiO薄膜的厚度设定为5μm以上。集电体的表面粗糙度设定为：最大高度粗糙度Rz = 5.0以上。薄膜形成后，在非氧化气氛中进行热处理。

3. 发明申请

US20050085095A1 Sintered object of silicon monoxide and method for producing the same 失效
标题翻译：一氧化硅的烧结体及其制造方法
公开(公告)号：US20050085095A1
公开(公告)日：2005-04-21
申请号：US10501996
申请日：2002-11-29
申请人： Yoshitake Natsume , Tadashi Ogasawara , Munetoshi Watanabe , Kazuomi Azuma , Toshiharu Iwase
发明人： Yoshitake Natsume , Tadashi Ogasawara , Munetoshi Watanabe , Kazuomi Azuma , Toshiharu Iwase
IPC分类号： C04B35/14 , C04B35/645 , C23C14/24 , C23C14/34 , H01L21/31 , H01L21/469
CPC分类号： C04B35/645 , C04B35/14 , C04B2235/3418 , C04B2235/5427 , C04B2235/604 , C04B2235/658 , C04B2235/6581 , C04B2235/79
摘要： A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 μm, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.
摘要翻译：提供用作形成氧化硅薄膜的材料的一氧化硅的烧结体，其中通过将样品在1,300℃的加热温度和真空气氛中，即在 10Pa以下的压力相对于测定前的样品不超过4质量％。该烧结体可以通过在非氧气氛中烧结粒径不小于250μm的SiO粒子，或者在其压制成型之后或在其压制成形期间来制造。该烧结体的蒸发速度高，并且当其用作成膜材料时，可以预期提高生产氧化硅薄膜的生产率。因此，可以广泛地应用于形成用作电绝缘膜，机械保护膜，光学膜，食品包装材料的阻隔膜等的氧化硅薄膜等。

4. 发明授权

US08029655B2 Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film 失效
标题翻译：溅射靶，其制造方法，通过使用这种溅射靶形成的溅射薄膜，以及使用这种薄膜的有机EL器件
公开(公告)号：US08029655B2
公开(公告)日：2011-10-04
申请号：US11996550
申请日：2006-07-03
申请人： Jyunji Kido , Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma , Koichi Mori
发明人： Jyunji Kido , Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma , Koichi Mori
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , C23C14/08 , H01B1/08 , H01L51/5253 , H05B33/26
摘要： Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.
摘要翻译：本发明提供能够赋予溅射膜高的阻水性和高柔性的溅射靶，能够在溅射中保持高的成膜速度，并且可能会对要形成的膜的目标物质造成损害尽可能。为了实现这一点，将含有20〜80重量％的SiO粉末，剩余的粉末由TiO 2粉末和/或Ti粉末制成的混合粉末进行压制和烧结。该烧结体具有SiαTi＆bgr;Oγ的组成，其中α，bgr; 和γ分别为Si，Ti和O的摩尔比，α/ 范围为0.45〜7.25，γ/（α+和bgr）的比例范围为0.80〜1.70。

5. 发明申请

US20090127108A1 SPUTTERING TARGET, METHOD FOR PRODUCING SAME, SPUTTERING THIN FILM FORMED BY USING SUCH SPUTTERING TARGET, AND ORGANIC EL DEVICE USING SUCH THIN FILM 失效
标题翻译：溅射靶，其制造方法，使用这种溅射靶材形成的溅射薄膜以及使用这种薄膜的有机EL器件
公开(公告)号：US20090127108A1
公开(公告)日：2009-05-21
申请号：US11996550
申请日：2006-07-03
申请人： Jyunji Kido , Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma , Koichi Mori
发明人： Jyunji Kido , Yoshitake Natsume , Tadashi Ogasawara , Kazuomi Azuma , Koichi Mori
IPC分类号： C23C14/34 , B22F3/10 , B27N3/02
CPC分类号： C23C14/3414 , C23C14/08 , H01B1/08 , H01L51/5253 , H05B33/26
摘要： Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.
摘要翻译：本发明提供能够赋予溅射膜高的阻水性和高柔性的溅射靶，能够在溅射中保持高的成膜速度，并且可能会对要形成的膜的目标物质造成损害尽可能。为了实现这一点，将含有20〜80重量％的SiO粉末，剩余的粉末由TiO 2粉末和/或Ti粉末制成的混合粉末进行压制并烧结。烧结体具有SialphaTibetaOgamma的组成，其中α，β和γ分别是Si，Ti和O的摩尔比，α/β范围在0.45至7.25之间，γ/（α+β）的比例从0.80到1.70。

6. 发明授权

US07151068B2 Sintered object of silicon monoxide and method for producing the same 失效
标题翻译：一氧化硅的烧结体及其制造方法
公开(公告)号：US07151068B2
公开(公告)日：2006-12-19
申请号：US10501996
申请日：2002-11-29
申请人： Yoshitake Natsume , Tadashi Ogasawara , Munetoshi Watanabe , Kazuomi Azuma , Toshiharu Iwase
发明人： Yoshitake Natsume , Tadashi Ogasawara , Munetoshi Watanabe , Kazuomi Azuma , Toshiharu Iwase
IPC分类号： C04B35/01
CPC分类号： C04B35/645 , C04B35/14 , C04B2235/3418 , C04B2235/5427 , C04B2235/604 , C04B2235/658 , C04B2235/6581 , C04B2235/79
摘要： A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 μm, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.
摘要翻译：提供用作形成氧化硅薄膜的材料的一氧化硅的烧结体，其中通过将样品在1,300℃的加热温度和真空气氛中，即在 10Pa以下的压力相对于测定前的样品不超过4质量％。该烧结体可以通过在非氧气氛中烧结粒径不小于250μm的SiO粒子，或者在其压制成型之后或在其压制成形期间来制造。该烧结体的蒸发速度高，并且当其用作成膜材料时，可以预期提高生产氧化硅薄膜的生产率。因此，可以广泛地应用于形成用作电绝缘膜，机械保护膜，光学膜，食品包装材料的阻隔膜等的氧化硅薄膜等。

7. 发明授权

US5089094A Process for the electrolytic production of magnesium 失效
标题翻译：镁的电解生产工艺
公开(公告)号：US5089094A
公开(公告)日：1992-02-18
申请号：US493733
申请日：1990-03-15
申请人： Tadashi Ogasawara , Yoshitake Natsume , Kenji Fujita
发明人： Tadashi Ogasawara , Yoshitake Natsume , Kenji Fujita
IPC分类号： C25C3/04 , C25C7/04
CPC分类号： C25C7/04 , C25C3/04
摘要： In a process for the electrolytic production of magnesium by the molten salt electrolysis of magnesium chloride using a molten salt cell bath comprised mainly of one or more salts selected from alkali metal chlorides and alkaline earth metal chlorides, the molten salt bath is enriched with magnesium chloride by suspending a magnesium oxide and/or magnesium carbonate powder to form a molten suspension and passing a chlorine-containing gas through the molten suspension at a temperature of 600.degree.-900.degree. C. so as to react the suspended powder with chlorine to form magnesium chloride. The resulting molten salt enriched with magnesium chloride can be directly introduced into the cell for electrolysis, thereby eliminating moisture absorption by the highly hygroscopic magnesium chloride. A pure magnesium can be produced with a high yield and improved current efficiency.
摘要翻译：在使用主要由选自碱金属氯化物和碱土金属氯化物中的一种或多种盐组成的熔融盐池电解液通过熔融盐电解氯化镁进行电解生产镁的方法中，熔融盐浴富含氯化镁通过使氧化镁和/或碳酸镁粉末悬浮以形成熔融悬浮液并使含氯气体在600-900℃的温度下通过熔融悬浮液，以使悬浮的粉末与氯反应形成镁氯化物。所得到的富含氯化镁的熔盐可以直接引入电解槽中进行电解，从而消除高吸湿性氯化镁的吸湿。可以以高产率和改善的电流效率生产纯镁。

8. 发明申请

US20090117023A1 SILICON MONOXIDE VAPOR DEPOSITION MATERIAL AND PROCESS FOR PRODUCING THE SAME 失效
标题翻译：一氧化硅蒸气沉积材料及其制造方法
公开(公告)号：US20090117023A1
公开(公告)日：2009-05-07
申请号：US11916452
申请日：2006-06-05
申请人： Yoshitake Natsume
发明人： Yoshitake Natsume
IPC分类号： C01B15/14
CPC分类号： C23C14/10 , C01B33/113 , C04B35/14 , C04B2235/428 , C04B2235/656 , C04B2235/77 , C04B2235/79 , C04B2235/80 , C04B2235/96 , C23C14/24
摘要： In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2θ=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2≦3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.
摘要翻译：在用于形成一氧化硅蒸发膜的粉末烧结型一氧化硅基蒸发材料中，抑制了飞溅的产生。确保能抵抗材料使用的材料强度。为了实现这些，在700〜1000℃下烧结由SiO析出的起始粉末，形成蒸发材料。在烧结步骤中抑制Si的析出。在通过XRD的测量中，峰值点附近产生的峰值点2θ= 28°附近的峰值强度P1和峰值点前后的平均强度梯度预期的基极强度P2满足以下：P1 / P2 <= 3。通过选择性地使用由真空冷凝机生产的沉淀SiO，将材料烧结后的蒸发材料的压缩断裂强度提高到5MPa以上。

9. 发明授权

US08142751B2 Silicon monoxide vapor deposition material and process for producing the same 失效
标题翻译：一氧化碳气相沉积材料及其制造方法
公开(公告)号：US08142751B2
公开(公告)日：2012-03-27
申请号：US11916452
申请日：2006-06-05
申请人： Yoshitake Natsume
发明人： Yoshitake Natsume
IPC分类号： C01B15/14 , C01B33/20 , C04B41/50
CPC分类号： C23C14/10 , C01B33/113 , C04B35/14 , C04B2235/428 , C04B2235/656 , C04B2235/77 , C04B2235/79 , C04B2235/80 , C04B2235/96 , C23C14/24
摘要： In a powder-sintered type silicon monoxide based evaporating material which is used to form an evaporated film of silicon monoxide, the generation of splash is restrained. Material strength that can resist against the use of the material is ensured. In order to realize these, a starting powder made of precipitating SiO is sintered at 700 to 1000° C. to form an evaporating material. The precipitation of Si is restrained in the step of the sintering. In the measurement thereof by XRD, the peak strength P1 at a Si peak point generated near 2θ=28° and the base strength P2 at the peak point expected from the average strength gradient before and after the peak point satisfies the following: P1/P2≦3. The compression fracture strength of the evaporating material after the material is sintered is raised to 5 MPa or more by selective use of precipitating SiO produced by a vacuum condensing machine.
摘要翻译：在用于形成一氧化硅蒸发膜的粉末烧结型一氧化硅基蒸发材料中，抑制了飞溅的产生。确保能抵抗材料使用的材料强度。为了实现这些，在700〜1000℃下烧结由SiO析出的起始粉末，形成蒸发材料。在烧结步骤中抑制Si的析出。在通过XRD的测量中，在峰值点附近产生的峰值点附近产生的Si峰值处的峰值强度P1在峰值点之前产生的峰值点处的基极强度P2预期为峰值点之前和之后的平均强度梯度满足以下：P1 / P2＆nlE; 3。通过选择性地使用由真空冷凝机生产的沉淀SiO，将材料烧结后的蒸发材料的压缩断裂强度提高到5MPa以上。

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