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1. 发明申请

US20110284817A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110284817A1
公开(公告)日：2011-11-24
申请号：US13109985
申请日：2011-05-17
申请人： Yoshitaka SASAGO , Masaharu Kinoshita , Mitsuharu Tai , Takashi Kobayashi
发明人： Yoshitaka SASAGO , Masaharu Kinoshita , Mitsuharu Tai , Takashi Kobayashi
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L27/2481 , H01L27/1021 , H01L27/2409 , H01L27/2436 , H01L27/2472
摘要： In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode.
摘要翻译：在非易失性半导体存储器件中，提供了一种通过减小作为选择元件的多晶硅二极管的截止电流来减小器件厚度来促进微细加工的技术。形成以低浓度掺杂有杂质并作为电阻可变存储器的选择元件的多晶硅二极管的电场弛豫层的多晶硅层，以被分成两层或多层，例如多晶硅层。以这种方式抑制电场弛豫层中的n型多晶硅层和p型多晶硅层之间的晶粒边界完全透过，从而防止产生流过的漏电流在不增加多晶硅二极管的高度的情况下施加反偏压的晶粒边界。

2. 发明授权

US09153774B2 Nonvolatile memory device and method for manufacturing same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US09153774B2
公开(公告)日：2015-10-06
申请号：US13884263
申请日：2010-12-06
申请人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Akio Shima , Kenzo Kurotsuchi , Takashi Kobayashi
发明人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Akio Shima , Kenzo Kurotsuchi , Takashi Kobayashi
IPC分类号： H01L27/06 , H01L45/00 , H01L27/102 , H01L29/792 , H01L27/24 , H01L27/115 , G11C13/00
CPC分类号： H01L45/1608 , G11C13/0004 , G11C2213/75 , H01L27/0688 , H01L27/1021 , H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2454 , H01L27/2481 , H01L27/249 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.
摘要翻译：当在叠层薄膜上除去形成在绝缘膜和栅电极交替层叠在一起的叠层膜的侧壁上的薄沟道半导体层时，包括沟道半导体层的垂直晶体管与栅电极之间的接触电阻，并且防止形成在层叠膜上的位线上升。作为其手段，电连接到沟道半导体层的导电层设置在堆叠膜的正上方。

3. 发明申请

US20130228739A1 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20130228739A1
公开(公告)日：2013-09-05
申请号：US13884263
申请日：2010-12-06
申请人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Akio Shima , Kenzo Kurotsuchi , Takashi Kobayashi
发明人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Akio Shima , Kenzo Kurotsuchi , Takashi Kobayashi
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0004 , G11C2213/75 , H01L27/0688 , H01L27/1021 , H01L27/11578 , H01L27/11582 , H01L27/2409 , H01L27/2454 , H01L27/2481 , H01L27/249 , H01L29/7926 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.
摘要翻译：当在叠层薄膜上除去形成在绝缘膜和栅电极交替层叠在一起的叠层膜的侧壁上的薄沟道半导体层时，包括沟道半导体层的垂直晶体管与栅电极之间的接触电阻，并且防止形成在层叠膜上的位线上升。作为其手段，电连接到沟道半导体层的导电层设置在堆叠膜的正上方。

4. 发明授权

US08592789B2 Nonvolatile semiconductor memory device and manufacturing method thereof 有权
公开(公告)号：US08592789B2
公开(公告)日：2013-11-26
申请号：US13109985
申请日：2011-05-17
申请人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Takashi Kobayashi
发明人： Yoshitaka Sasago , Masaharu Kinoshita , Mitsuharu Tai , Takashi Kobayashi
IPC分类号： H01L45/00
CPC分类号： H01L27/2481 , H01L27/1021 , H01L27/2409 , H01L27/2436 , H01L27/2472
摘要： In a nonvolatile semiconductor memory device, there is provided a technique which promotes microfabrication by reducing a thickness of the device as suppressing an OFF current of a polysilicon diode which is a selective element. A polysilicon layer to which an impurity is doped at low concentration and which becomes an electric-field relaxation layer of the polysilicon diode which is a selective element of a resistance variable memory is formed so as to be divided into two or more layers such as polysilicon layers. In this manner, it is suppressed to form the crystal grain boundaries thoroughly penetrating between an n-type polysilicon layer and a p-type polysilicon layer in the electric-field relaxation layer, and therefore, it is prevented to generate a leakage current flowing through the crystal grain boundaries in application of a reverse-bias voltage without increasing a height of the polysilicon diode.

5. 发明申请

US20090140233A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：非易失性半导体存储器件
公开(公告)号：US20090140233A1
公开(公告)日：2009-06-04
申请号：US12268118
申请日：2008-11-10
申请人： Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
发明人： Masaharu KINOSHITA , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
IPC分类号： H01L45/00
CPC分类号： H01L27/101 , G11C5/02 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1675
摘要： A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm.
摘要翻译：一种非易失性半导体存储器件，具有大的存储容量和稳定的重写条件，其中存储单元包括非易失性记录材料层，选择器元件和设置在非易失性记录材料层和选择器元件之间的半导体层， 5〜200nm。

6. 发明授权

US07838379B2 Non-volatile memory device and method of manufacturing the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07838379B2
公开(公告)日：2010-11-23
申请号：US12362277
申请日：2009-01-29
申请人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
发明人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
IPC分类号： H01L21/20
CPC分类号： H01L21/8221 , G11C11/5678 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1285 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.
摘要翻译：在相变存储器中，用作选择装置的二极管的电特性非常重要。然而，由于在使用多晶硅的二极管的膜中存在晶界，所以存在泄漏特性变化很大的问题，难以防止误读。为了解决这个问题，本发明提供了一种在激光退火中控制非晶硅的温度分布的方法，用于结晶和激活非晶硅，从而控制晶界。根据本发明，可以降低二极管的电性能的变化，并且可以提高相变存储器的产量。

7. 发明申请

US20090189137A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090189137A1
公开(公告)日：2009-07-30
申请号：US12362277
申请日：2009-01-29
申请人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
发明人： Masaharu Kinoshita , Motoyasu Terao , Hideyuki Matsuoka , Yoshitaka Sasago , Yoshinobu Kimura , Akio Shima , Mitsuharu Tai , Norikatsu Takaura
IPC分类号： H01L47/00
CPC分类号： H01L21/8221 , G11C11/5678 , G11C13/0004 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1285 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1675
摘要： In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved.
摘要翻译：在相变存储器中，用作选择装置的二极管的电特性非常重要。然而，由于在使用多晶硅的二极管的膜中存在晶界，所以存在泄漏特性变化很大的问题，难以防止误读。为了解决这个问题，本发明提供了一种在激光退火中控制非晶硅的温度分布的方法，用于结晶和激活非晶硅，从而控制晶界。根据本发明，可以降低二极管的电性能的变化，并且可以提高相变存储器的产量。

8. 发明授权

US07906834B2 Display device having thin film semiconductor device and manufacturing method of thin film semiconductor device 有权
标题翻译：具有薄膜半导体器件的显示器件和薄膜半导体器件的制造方法
公开(公告)号：US07906834B2
公开(公告)日：2011-03-15
申请号：US12219837
申请日：2008-07-29
申请人： Toshiyuki Mine , Mitsuharu Tai , Akio Shima
发明人： Toshiyuki Mine , Mitsuharu Tai , Akio Shima
IPC分类号： H01L23/552
CPC分类号： H01L21/268 , H01L21/02529 , H01L21/02532 , H01L21/02667 , H01L21/02675 , H01L21/02686 , H01L27/1285 , H01L29/78642
摘要： A display device having a thin film semiconductor device including a semiconductor thin film having first and second semiconductor regions formed each into a predetermined shape above an insulative substrate, a conductor fabricated into a predetermined shape to the semiconductor thin film and a dielectric film put between the semiconductor thin film and the conductor, in which the semiconductor thin film is a polycrystal thin film with the crystallization ratio thereof exceeding 90% and the difference of unevenness on the surface of the semiconductor thin film does not exceed 10 nm.
摘要翻译：一种具有薄膜半导体器件的显示装置，该薄膜半导体器件包括半导体薄膜，该半导体薄膜具有在绝缘性基板的上方形成为规定形状的第一半导体区域和第二半导体区域，对该半导体薄膜形成为规定形状的导体，半导体薄膜和导体，其中半导体薄膜是结晶比率超过90％的多晶薄膜，并且半导体薄膜的表面上的不均匀度不超过10nm。

9. 发明授权

US07902003B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07902003B2
公开(公告)日：2011-03-08
申请号：US11620154
申请日：2007-01-05
申请人： Kiyoshi Ouchi , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
发明人： Kiyoshi Ouchi , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
IPC分类号： H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.
摘要翻译：一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。当制造TFT时，该低电阻半导体层用于形成源极和漏极。由于C，N和O杂质降低了TFT的迁移率，因此使用多晶硅，其中污染物浓度满足以下条件：碳浓度nlE 3×1019 cm -3，氮浓度NlE 5×1017 cm-3，和氧浓度nlE; 3×1019 cm-3。

10. 发明授权

US07456428B2 Manufacturing method of semiconductor film and image display device 有权
标题翻译：半导体薄膜和图像显示装置的制造方法
公开(公告)号：US07456428B2
公开(公告)日：2008-11-25
申请号：US11711623
申请日：2007-02-28
申请人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
发明人： Mutsuko Hatano , Mikio Hongo , Akio Yazaki , Mitsuharu Tai , Takeshi Noda , Yukio Takasaki
IPC分类号： H01L29/04
CPC分类号： H01L21/02691 , C30B1/06 , H01L21/02683 , H01L21/02686 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： A semiconductor thin film is manufactured by scanning laser light or a substrate onto an arbitrary region of the semiconductor thin film and irradiating a laser thereon. The semiconductor thin film is formed by the substantially belt-shaped crystal being crystallized such that crystalline grains grow in the scanning direction, on the substrate, on XY coordinates where value x of beam size W (μm) of the laser light measured in substantially the same direction as the scanning direction is defined as X axis, and where value y of scanning velocity Vs (m/s) is defined as Y axis, the crystallization processing is performed within a region where all of the following conditions hold: condition 1: the beam size W is larger than wavelength of the laser beam, condition 2: the scanning velocity Vs is smaller than upper-limit of crystal growth speed, and condition 3: x×(1/y)
摘要翻译：通过将激光或基板扫描到半导体薄膜的任意区域上并在其上照射激光来制造半导体薄膜。半导体薄膜由基本上带状的晶体形成，使得晶粒在扫描方向上在基板上在XY坐标上生长，其中激光的光束尺寸W（mum）的值x基本上在与扫描方向相同的方向被定义为X轴，其中扫描速度Vs（m / s）的值y被定义为Y轴，在满足以下所有条件的区域内进行结晶处理：条件1：光束尺寸W大于激光束的波长，条件2：扫描速度Vs小于晶体生长速度的上限，条件3：xx（1 / y）<25μos。

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