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    • 2. 发明授权
    • Geomagnetic direction sensor
    • 地磁方向传感器
    • US5564194A
    • 1996-10-15
    • US449818
    • 1995-05-24
    • Masayoshi FujitaTakehiro Nagaki
    • Masayoshi FujitaTakehiro Nagaki
    • G01C17/32G01C17/28G01R33/02G01R33/09H01L43/12
    • G01R33/09G01C17/28
    • A geomagnetic direction sensor has a substrate, at least two magneto-resistive effect devices and a coil for generating the bias magnetic field. The substrate retains shape symmetry when rotated through 90.degree. and includes plural magnetic cores for converging the geomagnetism. The magnetic cores are arrayed circumferentially of the substrate and interconnected with one another by a non-magnetic material. At least two magneto-resistive effect devices are provided in register with the magnetic gaps so as to be substantially at right angles to one another and to the direction of the magnetic field of the geomagnetism in the magnetic gap region. The substrate also includes a coil for generating a bias magnetic field for impressing a bias magnetic field to each of the magneto-resistive effect devices.
    • 地磁方向传感器具有衬底,至少两个磁阻效应器件和用于产生偏置磁场的线圈。 当旋转90°时,基板保持形状对称,并且包括用于会聚地磁的多个磁芯。 磁芯在衬底的周向排列并且通过非磁性材料彼此互连。 提供至少两个磁阻效应器件与磁隙对准,以便基本上彼此成直角并且与磁隙区域中的地磁场的方向成一直线。 衬底还包括用于产生用于将偏置磁场施加到每个磁阻效应器件的偏置磁场的线圈。
    • 6. 发明授权
    • Magnetic transducer head
    • 磁性换能器头
    • US4277808A
    • 1981-07-07
    • US41439
    • 1979-05-22
    • Takehiro Nagaki
    • Takehiro Nagaki
    • G11B5/39G11B5/30G11B5/12
    • G11B5/3903
    • A magnetic transducer head having first and second magneto-resistance effect elements, each of which is made of a thin film having the magneto-resistance effect and which are arranged on approximately one line, a current source for flowing currents through the first and second magneto-resistance effect elements, and a bias source for applying bias magnetic fields to the first and second magneto-resistance effect elements. In this case, the bias magnetic field is selected from bias magnetic fields which have the direction of about .+-.(.pi./4).+-.(n/2).pi., where n is an integer, with respect to the currents flowing through the first and second magneto-resistance effect elements, and the current source and the bias source are so connected that when a uniform signal magnetic field is applied to the first and second magneto-resistance effect elements, the resistances thereof are varied in the opposite directions with respect to each other and the outputs from the first and second magneto-resistance effect elements are derived differentially.
    • 一种磁换能器头,具有第一和第二磁阻效应元件,每个磁阻效应元件由具有磁阻效应的薄膜制成并且被布置在大约一条线上,用于使电流流过第一和第二磁体的电流源 电阻效应元件和用于向第一和第二磁阻效应元件施加偏置磁场的偏压源。 在这种情况下,偏置磁场从相对于流过的电流的方向为约+/-(π/ 4)+/-(n / 2)pi的偏置磁场选择,其中n为整数 通过第一和第二磁阻效应元件,并且电流源和偏置源是连接的,使得当均匀的信号磁场施加到第一和第二磁阻效应元件时,其电阻在相反的方向上变化 相互之间的方向和来自第一和第二磁阻效应元件的输出差分地导出。