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1. 发明授权

US4968932A Evaluation method for semiconductor device 失效
标题翻译：半导体器件的评估方法
公开(公告)号：US4968932A
公开(公告)日：1990-11-06
申请号：US251601
申请日：1988-09-30
申请人： Yoshiro Baba , Yutaka Koshino , Seiji Yasuda
发明人： Yoshiro Baba , Yutaka Koshino , Seiji Yasuda
IPC分类号： G01R19/00 , G01R31/26 , G01R31/265 , G01R31/311 , H01L21/66
CPC分类号： G01R31/2656 , G01R31/2608 , G01R31/311
摘要： An evaluation method for a semiconductor device includes the steps of applying a reverse bias voltage between an N-type substrate formed in a surface of the semiconductor device and a P-type region formed in a surface of the N-type substrate to form a depletion layer along the junction therebetween, scanning the surface of the semiconductor device is one direction with a light beam to cause an optical beam induced current to be flow across the junction, and measuring the OBIC intensity profile on a scanning line extending across the depletion layer in the surfaces of the N-type substrate and P-type region. In the method, the light beam has a wavelength whose penetration length is smaller than the depth or thickness of the P-type region, the OBIC intensity profile is integrated over a range corresponding to the depletion layer, and the integrated value is normalized by the reverse bias voltage to determine the surface potential distribution of the semiconductor device.

2. 发明授权

US4566174A Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4566174A
公开(公告)日：1986-01-28
申请号：US545545
申请日：1983-10-26
申请人： Seiji Yasuda , Yutaka Koshino , Toshio Yonezawa
发明人： Seiji Yasuda , Yutaka Koshino , Toshio Yonezawa
IPC分类号： H01L27/082 , H01L21/20 , H01L21/74 , H01L21/761 , H01L21/8224 , H01L21/8228 , H01L21/8238 , H01L21/76
CPC分类号： H01L21/74 , H01L21/8224 , H01L21/82285 , H01L21/8238 , H01L27/0826 , Y10S148/05
摘要： A method of manufacturing a semiconductor device wherein a pair of grooves having different depths are formed in a surface of a semiconductor substrate, an epitaxial layer of one conductivity type is grown to a depth enough to fill a shallower one of the grooves, and an epitaxial layer of the opposite conductivity type is further grown to a depth enough to fill a deeper one of the grooves, followed by the step of etching the entire surface to expose the surface of said semiconductor substrate and to leave in each groove an epitaxial layer of mutually different conductivity type and having the same depth and width. A semiconductor device as manufactured by the above method.
摘要翻译：一种制造半导体器件的方法，其中在半导体衬底的表面中形成具有不同深度的一对沟槽，一个导电类型的外延层生长到足以填充较浅的一个沟槽的深度，并且外延相反导电类型的层进一步生长到足以填充更深的一个沟槽的深度，接着是蚀刻整个表面以暴露所述半导体衬底的表面并且在每个沟槽中留下相互的外延层的步骤不同的导电类型，具有相同的深度和宽度。通过上述方法制造的半导体器件。

3. 发明授权

US4403392A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4403392A
公开(公告)日：1983-09-13
申请号：US152305
申请日：1980-05-22
申请人： Jiro Oshima , Masaharu Aoyama , Seiji Yasuda , Toshio Yonezawa
发明人： Jiro Oshima , Masaharu Aoyama , Seiji Yasuda , Toshio Yonezawa
IPC分类号： H01L29/43 , H01L21/225 , H01L21/28 , H01L21/321 , H01L23/522 , H01L23/532
CPC分类号： H01L23/53271 , H01L21/2257 , H01L21/28 , H01L21/321 , H01L23/5226 , H01L2924/0002 , Y10S438/92
摘要： A method for manufacturing a semiconductor device having a high breakdown voltage and a high reliability, comprises (a) forming on a semiconductor substrate an insulating layer having a diffusion window; (b) forming an impurity-doped poly-silicon layer on the insulating layer and on that portion of the semiconductor substrate which is exposed through the diffusion window; (c) forming an undoped poly-silicon layer on the impurity-doped poly-silicon layer; (d) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer and undoped poly-silicon layer, thus diffusing the impurity from the impurity-doped poly-silicon layer into the semiconductor substrate through the diffusion window and converting the undoped poly-silicon layer to a silicon oxide layer; (e) forming on the silicon oxide layer an oxidation-resisting mask layer in a desired pattern; and (f) thermally oxidizing the substrate with the insulating layer, impurity-doped poly-silicon layer, silicon oxide layer and mask layer, thus converting those portions of the impurity-doped poly-silicon layer which lie beneath those portions of the silicon oxide layer which are exposed through the mask layer to impurity-doped silicon oxide layers, whereby the remaining portions of the impurity-doped poly-silicon layer provide an interconnection electrode layer having a desired pattern.
摘要翻译：一种制造具有高击穿电压和高可靠性的半导体器件的方法，包括：（a）在半导体衬底上形成具有扩散窗的绝缘层; （b）在绝缘层上形成掺杂杂质的多晶硅层，以及通过扩散窗露出的部分半导体衬底; （c）在杂质掺杂的多晶硅层上形成未掺杂的多晶硅层; （d）用绝缘层，杂质掺杂的多晶硅层和未掺杂的多晶硅层热氧化衬底，从而通过扩散窗将杂质从杂质掺杂的多晶硅层扩散到半导体衬底中，并将未掺杂的多晶硅层到氧化硅层; （e）在所述氧化硅层上形成所需图案的抗氧化掩模层; 和（f）用绝缘层，杂质掺杂的多晶硅层，氧化硅层和掩模层热氧化衬底，从而转换位于氧化硅部分之下的杂质掺杂多晶硅层的那些部分层，其通过掩模层暴露于杂质掺杂的氧化硅层，由此杂质掺杂多晶硅层的剩余部分提供具有期望图案的互连电极层。

4. 发明申请

US20100101834A1 INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS OF MANUFACTURING THEM 审中-公开
标题翻译：层间隔离膜，互连结构及其制造方法
公开(公告)号：US20100101834A1
公开(公告)日：2010-04-29
申请号：US12528667
申请日：2008-02-22
申请人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura , Masahiro Nakamura
发明人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura , Masahiro Nakamura
IPC分类号： H01B3/22 , H01B3/24 , B32B37/00
CPC分类号： H01L21/3127 , H01L21/02115 , H01L21/0212 , H01L21/022 , H01L21/02274 , H01L21/312 , H01L21/76829 , H01L21/76835 , H01L23/53295 , H01L2924/0002 , Y10T156/10 , H01L2924/00
摘要： An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.
摘要翻译：层间绝缘膜可以通过层叠含有Si原子的烃层和含有N原子的碳氟化合物层而制造，其中烃层含有H原子和C原子，其比例为的C原子数与H原子数（H / C）成为0.8〜1.2。层间绝缘膜使得可以抑制由热退火引起的漏电流的产生和膜收缩，并且具有低介电常数并且是稳定的。

5. 发明授权

US4530768A Method for the disposal of waste water containing iron-cyanide complexes 失效
标题翻译：处理含有氰化铁配合物的废水的方法
公开(公告)号：US4530768A
公开(公告)日：1985-07-23
申请号：US577354
申请日：1984-02-06
申请人： Koichi Tanihara , Keiko Tamai , Seiji Yasuda
发明人： Koichi Tanihara , Keiko Tamai , Seiji Yasuda
IPC分类号： C02F9/00 , C02F1/70
CPC分类号： C02F1/5245 , C02F2101/18 , Y10S210/904
摘要： The invention provides an improvement in the disposal of a waste water coining iron-cyanide complexes including ferricyanides by the reduction of the ferricyanide ions into ferrocyanide in the presence of a zinc salt to precipitate the ferrocyanide ions in the form of zinc ferrocyanide. The improvement comprises the use of a sulfite, e.g. sodium sulfite, and a thiosulfate, e.g. sodium thiosulfate, in combination as the reducing agent whereby the reduction of the ferricyanide ions is complete within a relatively short time without being affected by the atmospheric oxygen or other factors.
摘要翻译：本发明通过在锌盐存在下将铁氰化物离子还原成亚铁氰化物，使包含铁氰化物的氰化铁络合物的废水的处理得到改进，以亚铁氰化锌的形式沉淀亚铁氰化物离子。改进之处在于使用亚硫酸盐，例如亚硫酸钠和硫代硫酸盐，例如硫代硫酸钠，作为还原剂组合，由此铁氰化物离子的还原在相对短的时间内完成，而不受大气氧或其它因素的影响。

6. 发明申请

US20100032844A1 INTERLAYER INSULATING FILM, WIRING STRUCTURE AND ELECTRONIC DEVICE AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：层间绝缘膜，接线结构和电子器件及其制造方法
公开(公告)号：US20100032844A1
公开(公告)日：2010-02-11
申请号：US12514173
申请日：2007-11-08
申请人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
发明人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L23/48
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要翻译：半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。氟碳膜含氮，介电常数低，重现性好，稳定性好。

7. 发明授权

US06987022B2 Leukemic cell-adsorbing material containing lectin protein from Dolichos beans or soybeans 失效
标题翻译：含有Dolichos豆或大豆的凝集素蛋白的白血病细胞吸附材料
公开(公告)号：US06987022B2
公开(公告)日：2006-01-17
申请号：US10158157
申请日：2002-05-31
申请人： Osamu Nakamura , Hideki Ohba , Imre Sallay , Fumio Yagi , Sawako Moriwaki , Seiji Yasuda
发明人： Osamu Nakamura , Hideki Ohba , Imre Sallay , Fumio Yagi , Sawako Moriwaki , Seiji Yasuda
IPC分类号： C12N5/06 , C12N5/08 , C12N11/10 , C07K17/02 , C07K17/10
CPC分类号： C12N5/0093 , A61M1/3679 , A61M2202/0439 , C07K14/37 , C07K14/42 , C07K17/10 , C12N5/0694 , Y10S530/812 , Y10S530/813
摘要： An efficient method for therapeutic treatment of a leukemic patient is disclosed in which the patient's body fluid under external circulation is brought into direct contact with an adsorbent material capable of adsorbing the leukemic cells in the body fluid specifically and selectively. The leukemic cell-adsorbent material, which is used by filling a column to form an adsorbent bed, is a conjugate of a lectin protein extracted from, e.g., Dolichos beans or soybeans coupled with a physiologically inert carrier material such as a polysaccharide in the form of beads or a superparamagnetic material in the form of iron oxide-based magnetic beads.
摘要翻译：公开了一种用于治疗白血病患者的有效方法，其中将外部循环下的患者体液与能够特异性且选择性地吸收体液中的白血病细胞的吸附材料直接接触。用于填充柱以形成吸附床的白血病细胞吸附材料是从例如Dolichos豆或大豆与生理惰性载体材料如多糖形式的提取的凝集素蛋白的缀合物，其形式为的珠子或以铁氧化物基磁珠形式的超顺磁性材料。

8. 发明授权

US06465512B2 Leukemic cell growth inhibiting method 失效
公开(公告)号：US06465512B2
公开(公告)日：2002-10-15
申请号：US09733947
申请日：2000-12-12
申请人： Osamu Nakamura , Yoko Fuke , Hideki Ohba , Seiji Yasuda
发明人： Osamu Nakamura , Yoko Fuke , Hideki Ohba , Seiji Yasuda
IPC分类号： A61K3126
CPC分类号： A61K31/26 , Y10S514/885 , Y10S514/908
摘要： Disclosed is a method for growth inhibition of human leukemic cells or therapeutic treatment method of a leukemic patient by using a medicament of which the effective ingredient is a methylsulfinylalkyl isothiocyanate such as 4-(methylsulfinyl)butyl isothiocyanate and 6-(methylsulfinyl)hexyl isothiocyanate, which can be prepared by extraction from the tissues of certain plants and can induce apoptosis in human leukemic cells. This medicament compound is little growth-inhibitive against normal cells as compared with leukemic cells, so that a remarkable therapeutic effect can be expected.

9. 发明授权

US07923819B2 Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same 有权
标题翻译：层间绝缘膜，布线结构和电子器件及其制造方法
公开(公告)号：US07923819B2
公开(公告)日：2011-04-12
申请号：US12514173
申请日：2007-11-08
申请人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
发明人： Tadahiro Ohmi , Seiji Yasuda , Atsutoshi Inokuchi , Takaaki Matsuoka , Kohei Kawamura
IPC分类号： H01L23/58
CPC分类号： H01L21/3127 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/76829 , H01L21/76835 , H01L21/76843 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A wiring structure of a semiconductor device or the like includes an interlayer insulating film having a fluorocarbon film formed on an underlayer, and a conductor buried in the interlayer insulating film. The fluorocarbon film contains nitrogen and is low in dielectric constant, excellent in reproducibility and stable.
摘要翻译：半导体器件等的布线结构包括具有形成在底层上的氟碳膜的层间绝缘膜和埋在层间绝缘膜中的导体。氟碳膜含氮，介电常数低，重现性好，稳定性好。

10. 发明授权

US06420171B1 Leukemic cell-adsorbing material containing lectin protein from Agrocybe cylindracea or jequirity plant seed 失效
标题翻译：含有Agrocybe cylindracea或jequirity植物豆种子的凝集素蛋白质的白血病细胞吸附材料
公开(公告)号：US06420171B1
公开(公告)日：2002-07-16
申请号：US09549493
申请日：2000-04-14
申请人： Osamu Nakamura , Hideki Ohba , Imre Sallay , Fumio Yagi , Sawako Moriwaki , Seiji Yasuda
发明人： Osamu Nakamura , Hideki Ohba , Imre Sallay , Fumio Yagi , Sawako Moriwaki , Seiji Yasuda
IPC分类号： C12N506
CPC分类号： C12N5/0093 , A61M1/3679 , A61M2202/0439 , C07K14/37 , C07K14/42 , C07K17/10 , Y10S530/812 , Y10S530/813
摘要： An efficient method for therapeutic treatment of leukemia is provided in which a patient's body fluid during external circulation is brought into direct contact with an adsorbent material capable of specifically and selectively adsorbing leukemic cells in the body fluid. The leukemic cell-adsorbing material is a composite of a lectin protein coupled with a physiologically inert carrier material such as a galactan polysaccharide in the form of beads. The lectin protein may be obtained from a mushroom fungus such as Agrocybe cylindracea or a leguminous seed such as from the jequirity bean plant. The lectin protein and carrier material can be bound by forming chemical linkages between amino groups in the lectin protein and functional groups in the carrier material, and unreacted functional groups of the carrier material may be blocked with an amino acid. A leukemic cell-adsorbing column may be formed by filling the leukemic cell-adsorbing material into a tubular body to form an adsorbent bed. The tubular body may have an inner diameter of from 10 to 20 mm and a height of from 50 to 200 mm.
摘要翻译：提供了一种治疗白血病的有效方法，其中外部循环期间的患者体液与能够特异性和选择性地吸收体液中的白血病细胞的吸附材料直接接触。白血病细胞吸附材料是凝集素蛋白与生理惰性载体材料如珠粒形式的半乳聚糖多糖的复合物。凝集素蛋白质可以从蘑菇真菌如花椰菜（Agrocybe cylindracea）或豆科植物种子（例如来自不育豆）得到。凝集素蛋白质和载体材料可以通过在凝集素蛋白中的氨基和载体材料中的官能团之间形成化学键而结合，载体材料的未反应的官能团可以用氨基酸封闭。可以通过将白血病细胞吸附材料填充到管状体中以形成吸附床来形成白血病细胞吸附柱。管状体的内径可以为10〜20mm，高度为50〜200mm。

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