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1. 发明申请

US20120028453A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20120028453A1
公开(公告)日：2012-02-02
申请号：US13258941
申请日：2009-09-01
申请人： Yoshinori Matsuno , Kenichi Ohtsuka , Naoki Yutani , Kenichi Kuroda , Hiroshi Watanabe , Shozo Shikama
发明人： Yoshinori Matsuno , Kenichi Ohtsuka , Naoki Yutani , Kenichi Kuroda , Hiroshi Watanabe , Shozo Shikama
IPC分类号： H01L21/265
CPC分类号： H01L21/046 , H01L21/0495 , H01L29/1608 , H01L29/6606 , H01L29/872
摘要： An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.
摘要翻译：本发明的目的是提供一种用于制造碳化硅半导体器件的方法，其中可以缩短去除牺牲氧化膜所需的时间，并且可以降低对碳化硅层的表面的损坏。制造碳化硅半导体器件的方法包括：（a）对碳化硅层进行离子注入; （b）对离子注入碳化硅层2进行激活退火; （c）通过干蚀刻去除已经进行了活化退火的碳化硅层2的表面层; （d）通过对其进行牺牲氧化，在已经进行了干蚀刻的碳化硅层的表面层上形成牺牲氧化膜; 和（e）通过湿蚀刻去除牺牲氧化膜。

2. 发明授权

US08569123B2 Method for manufacturing silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件的制造方法
公开(公告)号：US08569123B2
公开(公告)日：2013-10-29
申请号：US13258941
申请日：2009-09-01
申请人： Yoshinori Matsuno , Kenichi Ohtsuka , Naoki Yutani , Kenichi Kuroda , Hiroshi Watanabe , Shozo Shikama
发明人： Yoshinori Matsuno , Kenichi Ohtsuka , Naoki Yutani , Kenichi Kuroda , Hiroshi Watanabe , Shozo Shikama
IPC分类号： H01L21/338
CPC分类号： H01L21/046 , H01L21/0495 , H01L29/1608 , H01L29/6606 , H01L29/872
摘要： An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer 2; (c) removing a surface layer of the silicon carbide layer 2, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.
摘要翻译：本发明的目的是提供一种用于制造碳化硅半导体器件的方法，其中可以缩短去除牺牲氧化膜所需的时间，并且可以降低对碳化硅层的表面的损坏。制造碳化硅半导体器件的方法包括：（a）对碳化硅层进行离子注入; （b）对离子注入碳化硅层2进行激活退火; （c）通过干蚀刻去除已经进行了活化退火的碳化硅层2的表面层; （d）通过对其进行牺牲氧化，在已经进行了干蚀刻的碳化硅层的表面层上形成牺牲氧化膜; 和（e）通过湿蚀刻去除牺牲氧化膜。

3. 发明授权

US08377811B2 Method for manufacturing silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件的制造方法
公开(公告)号：US08377811B2
公开(公告)日：2013-02-19
申请号：US12188676
申请日：2008-08-08
申请人： Yoshinori Matsuno , Kenichi Ohtsuka , Kenichi Kuroda , Shozo Shikama , Naoki Yutani
发明人： Yoshinori Matsuno , Kenichi Ohtsuka , Kenichi Kuroda , Shozo Shikama , Naoki Yutani
IPC分类号： H01L21/28
CPC分类号： H01L21/0495 , H01L29/6606
摘要： An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer.
摘要翻译：本发明的目的是提供一种制造具有恒定特性并减小正向特性变化的碳化硅半导体器件的方法。根据本发明的制造碳化硅半导体器件的方法包括以下步骤：（a）制备碳化硅衬底; （b）在所述碳化硅衬底的第一主表面上形成外延层; （c）在所述外延层上形成保护膜; （d）在所述碳化硅衬底的第二主表面上形成第一金属层; （e）在预定温度下对所述碳化硅衬底进行热处理以在所述第一金属层和所述碳化硅衬底的所述第二主表面之间形成欧姆结; （f）去除保护膜; （g）在所述外延层上形成第二金属层; 和（h）在400℃至600℃的温度下对所述碳化硅衬底进行热处理以在所述第二金属层和所述外延层之间形成所需特性的肖特基结。

4. 发明申请

US20090098719A1 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：US20090098719A1
公开(公告)日：2009-04-16
申请号：US12188676
申请日：2008-08-08
申请人： Yoshinori MATSUNO , Kenichi Ohtsuka , Kenichi Kuroda , Shozo Shikama , Naoki Yutani
发明人： Yoshinori MATSUNO , Kenichi Ohtsuka , Kenichi Kuroda , Shozo Shikama , Naoki Yutani
IPC分类号： H01L21/04
CPC分类号： H01L21/0495 , H01L29/6606
摘要： An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400° C. to 600° C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer.
摘要翻译：本发明的目的是提供一种制造具有恒定特性并减小正向特性变化的碳化硅半导体器件的方法。根据本发明的制造碳化硅半导体器件的方法包括以下步骤：（a）制备碳化硅衬底; （b）在所述碳化硅衬底的第一主表面上形成外延层; （c）在外延层上形成保护膜; （d）在所述碳化硅衬底的第二主表面上形成第一金属层; （e）在预定温度下对所述碳化硅衬底进行热处理以在所述第一金属层和所述碳化硅衬底的所述第二主表面之间形成欧姆结; （f）去除保护膜; （g）在所述外延层上形成第二金属层; 和（h）在400℃至600℃的温度下对所述碳化硅衬底进行热处理以在所述第二金属层和所述外延层之间形成所需特性的肖特基结。

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