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1. 发明授权

US07333525B2 Integrated semiconductor light-emitting device and method for manufacturing same 失效
标题翻译：集成半导体发光器件及其制造方法
公开(公告)号：US07333525B2
公开(公告)日：2008-02-19
申请号：US11038576
申请日：2005-01-21
申请人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
发明人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0202 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/32325 , H01S5/32341 , H01S5/405 , H01S5/4087
摘要： An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.
摘要翻译：提供一种适于安装在拾取器上的集成半导体发光器件。集成半导体发光器件具有堆叠在半导体衬底上的第一激光器部分和以薄膜层形式堆叠形成的突出形状的第二激光器部分。第二激光器部件装配到与半导体衬底中的第一激光器部分相邻形成的沟槽中。至少第一和第二激光部分和沟槽通过金属粘结层粘合在一起。第一激光部的发光点和第二激光部的发光点位于与第一激光部和第二激光部的堆叠的方向垂直的大致相同的水平方向上。

2. 发明授权

US07399649B2 Semiconductor light-emitting device and fabrication method thereof 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07399649B2
公开(公告)日：2008-07-15
申请号：US10577722
申请日：2004-09-27
申请人： Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Hiroyuki Ota , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/20
摘要： An underlying layer ALY of GaN is formed on a sapphire substrate SSB; a transfer layer TLY of GaN with a bump and dip shaped surface is formed on the underlying layer ALY; a light absorption layer BLY is formed on the bump and dip shaped surface of the transfer layer TLY; and a grown layer 4 of a planarization layer CLY and a structured light-emitting layer DLY having at least an active layer are formed on the light absorption layer BLY. A support substrate 2 is provided on the grown layer 4. The backside of the sapphire substrate SSB is irradiated with light of the second harmonic of YAG laser (wavelength 532 nm) to decompose the light absorption layer BLY and delaminate the sapphire substrate SSB, thereby allowing the planarization layer CLY of a bump and dip shaped surface to be exposed as a light extraction face.
摘要翻译：在蓝宝石衬底SSB上形成GaN的下层ALY; 在底层ALY上形成具有凸起和浸渍形状表面的GaN的转移层TLY; 在转印层TLY的凸起和浸渍表面上形成光吸收层BLY; 并且在光吸收层BLY上形成平坦化层CLY的生长层4和至少具有有源层的结构化的发光层DLY。在生长层4上设置有支撑基板2。蓝宝石衬底SSB的背面用YAG激光的二次谐波（波长532nm）的光照射，以分解光吸收层BLY并使蓝宝石衬底SSB分层，从而使凸起和浸渍面的平坦化层CLY 被曝光作为光提取面。

3. 发明申请

US20070099321A1 Method for fabricating semiconductor laser device 审中-公开
标题翻译：制造半导体激光器件的方法
公开(公告)号：US20070099321A1
公开(公告)日：2007-05-03
申请号：US10581202
申请日：2004-09-27
申请人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01L21/00 , H01L21/28 , H01L21/3205
CPC分类号： H01S5/4043 , H01S5/0217 , H01S5/0425 , H01S5/22 , H01S5/4087
摘要： A first intermediate body is fabricated on a semiconductor substrate. The first intermediate body includes a first lasing portion of a multi-layer stack and a metal adherent layer. A second intermediate body is fabricated on a support substrate. The second intermediate body includes a second lasing portion formed of a multi-layer stack to be less in size than the first lasing portion, and a groove formed adjacent thereto to form a metal adherent layer. Then, with waveguide paths brought into close proximity, the adherent layers of the first and second intermediate bodies are fused to generate an integrated adherent layer, thereby securely adhering the first and second lasing portions to each other. Thereafter, the support substrate is stripped off from the second lasing portion, thereby allowing the adherent layer to be partially exposed. A semiconductor laser device is thus fabricated which has the exposed adherent layer as a common electrode.
摘要翻译：在半导体衬底上制造第一中间体。第一中间体包括多层堆叠的第一激光部分和金属粘附层。在支撑基板上制造第二中间体。第二中间体包括由多层叠层形成的尺寸小于第一激光部分的第二激光部分和与其相邻形成的沟槽以形成金属粘附层。然后，随着波导路径相互靠近，第一和第二中间体的粘附层被熔合以产生一体化的粘合层，从而将第一和第二激光部分牢固地粘附到彼此。此后，从第二激光部分剥离支撑基板，从而允许粘附层部分露出。因此制造了具有暴露的粘附层作为公共电极的半导体激光器件。

4. 发明授权

US07477669B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07477669B2
公开(公告)日：2009-01-13
申请号：US10576925
申请日：2004-09-27
申请人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0201 , H01S5/0213 , H01S5/0217 , H01S5/0425 , H01S5/2004 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087
摘要： This invention provides a semiconductor laser device and method of manufacture with a small interval between light emitting points of laser lights. A first light emitting element having a semiconductor substrate and a laser oscillation section, and a second light emitting element having a laser oscillation section, are brought together with a ridged waveguide of the laser oscillation section facing the ridged waveguide of the laser oscillation section, and then bonded together by virtue of SOGs having a small thickness. A conductive wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, and a wiring layer electrically connected with an ohmic electrode layer on the ridged waveguide, are arranged to extend until the insulating layer on the semiconductor substrate. Further, the ohmic electrodes and are formed on the bottom surface of the semiconductor substrate and the top surface of the laser oscillation section, respectively.
摘要翻译：本发明提供一种在激光的发光点之间以小间隔制造的半导体激光器件及其制造方法。具有半导体衬底和激光振荡部分的第一发光元件和具有激光振荡部分的第二发光元件与激光振荡部分的脊形波导一起与激光振荡部分的脊状波导相对，并且然后利用厚度小的SOG将其粘结在一起。与脊状波导上的欧姆电极层电连接的导电布线层和与脊状波导上的欧姆电极层电连接的布线层被布置成延伸到半导体基板上的绝缘层。此外，欧姆电极分别形成在半导体衬底的底表面和激光振荡部分的顶表面上。

5. 发明申请

US20070091958A1 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20070091958A1
公开(公告)日：2007-04-26
申请号：US10576925
申请日：2004-09-27
申请人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
发明人： Mamoru Miyachi , Yoshinori Kimura , Kiyofumi Chikuma
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0201 , H01S5/0213 , H01S5/0217 , H01S5/0425 , H01S5/2004 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087
摘要： This invention is to provide a semiconductor laser device with a small interval between light emitting points of laser lights and a method of manufacturing the same. A first light emitting element 1a having a semiconductor substrate 12a and a laser oscillation section 10a, and a second light emitting element 2a having a laser oscillation section 4a, are brought together with a ridged waveguide 8 of the laser oscillation section 10a facing the ridged waveguide 5 of the laser oscillation section 4a, and then bonded together by virtue of SOGs 3a having a small thickness. A conductive wiring layer Qa1 electrically connected with an ohmic electrode layer 9a on the ridged waveguide 8a, and a wiring layer Qa2 electrically connected with an ohmic electrode layer 6a on the ridged waveguide 5a, are arranged to extend until the insulating layer 11a on the semiconductor substrate 12a. Further, the ohmic electrodes Pa1 and Pa2 are formed on the bottom surface of the semiconductor substrate 12a and the top surface of the laser oscillation section 4a, respectively. In this way, when a drive current is supplied between the ohmic electrode Pa1 and the wiring layer Qa1, the laser oscillation section 10a will emit a light. On the other hand, when a drive current is supplied between the ohmic electrode Pa2 and the wiring layer Qa2, the laser oscillation section 4a will emit a light. In this manner, since the laser oscillation sections 4a and 10a are bonded together by virtue of SOGs 3a having a small thickness, it is allowed to form a semiconductor laser device with a small interval between light emitting points.
摘要翻译：本发明提供一种在激光的发光点之间具有小间隔的半导体激光器件及其制造方法。具有半导体衬底12a和激光振荡部分10a的第一发光元件1a和具有激光振荡部分4a的第二发光元件2a与激光振荡部分的脊状波导8一起 10a面对激光振荡部分4a的脊状波导5，然后借助于具有小厚度的SOG 3a而结合在一起。与脊状波导管8a上的欧姆电极层9a电连接的导电布线层Qa 1和与脊状波导5a上的欧姆电极层6a电连接的布线层Qa 2被布置成延伸直到半导体衬底12a上的绝缘层11a。此外，欧姆电极Pa 1和Pa 2分别形成在半导体衬底12a的底表面和激光振荡部分4a的顶表面上。以这种方式，当在欧姆电极Pa 1和布线层Qa 1之间提供驱动电流时，激光振荡部分10a将发光。另一方面，当在欧姆电极Pa 2和布线层Qa 2之间提供驱动电流时，激光振荡部分4a将发光。以这种方式，由于激光振荡部分4a和10a由于具有小厚度的SOG 3a而结合在一起，所以允许在发光点之间形成间隔小的半导体激光器件。

6. 发明申请

US20050175053A1 Integrated semiconductor light-emitting device and method for manufacturing same 失效
标题翻译：集成半导体发光器件及其制造方法
公开(公告)号：US20050175053A1
公开(公告)日：2005-08-11
申请号：US11038576
申请日：2005-01-21
申请人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
发明人： Yoshinori Kimura , Mamoru Miyachi , Kiyofumi Chikuma
IPC分类号： G11B7/125 , H01S5/02 , H01S5/22 , H01S5/323 , H01S5/343 , H01S5/40 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0202 , H01S5/0217 , H01S5/0224 , H01S5/02272 , H01S5/32325 , H01S5/32341 , H01S5/405 , H01S5/4087
摘要： An integrated semiconductor light-emitting device suitable for being mounted on a pickup is provided. The integrated semiconductor light-emitting device has a first laser part stacked on a semiconductor substrate and a projection-shaped second laser part formed by stack in thin-film-layer form. The second laser part is fitted into a trench formed adjacent to the first laser part in the semiconductor substrate. At least the first and second laser parts and the trench are bonded together through a metal bonding layer. An emission spot of the first laser part and an emission spot of the second laser part are located away in approximately the same horizontal direction perpendicular to the direction of the stack of the first and second laser parts.
摘要翻译：提供一种适于安装在拾取器上的集成半导体发光器件。集成半导体发光器件具有堆叠在半导体衬底上的第一激光器部分和以薄膜层形式堆叠形成的突出形状的第二激光器部分。第二激光器部件装配到与半导体衬底中的第一激光器部分相邻形成的沟槽中。至少第一和第二激光部分和沟槽通过金属粘结层粘合在一起。第一激光部的发光点和第二激光部的发光点位于与第一激光部和第二激光部的堆叠的方向垂直的大致相同的水平方向上。

7. 发明申请

US20050036421A1 Information recording medium, information recording apparatus, information recording method, information playback apparatus, information playback method, recording program recording medium, and playback program recording medium 失效
标题翻译：信息记录介质，信息记录装置，信息记录方法，信息重放装置，信息重放方法，记录程序记录介质和重放程序记录介质
公开(公告)号：US20050036421A1
公开(公告)日：2005-02-17
申请号：US10901303
申请日：2004-07-29
申请人： Kiyofumi Chikuma
发明人： Kiyofumi Chikuma
IPC分类号： G11B7/24 , G11B7/00 , G11B7/004 , G11B7/0045 , G11B7/005 , G11B7/242
CPC分类号： G11B7/24065 , G11B7/0045 , G11B7/00455 , G11B7/005 , G11B7/0052
摘要： An optical disk from which information is played back when the optical disk is irradiated with a playback light beam which does not pass through a photochromic layer before its transparency is changed by irradiation with a recording light beam, but passes through the photochromic layer after its transparency is changed, including: the photochromic layer which is initialized with initialization light and also maintains a change in its transparency caused by irradiation with a recording light beam after end of the irradiation; and a fluorescent layer for emitting, as detection light, light of a frequency different from the frequency of the playback light beam when the fluorescent layer is irradiated with the playback light beam, wherein the photochromic layer and the fluorescent layer are formed in order in the direction in which the recording light beam and the playback light beam are irradiated.
摘要翻译：当光盘在通过照射记录光束而改变其透明度之前不通过光致变色层的重放光束照射光盘时，再通过光致变色层再透过信息的光盘包括：用初始化光初始化的光致变色层，并且在照射结束后也保持由记录光束照射引起的透明度的变化; 以及荧光层，用于当荧光层被重放光束照射时，作为检测光发射与重放光束的频率不同的频率的光，其中光致变色层和荧光层在记录光束和回放光束照射的方向。

8. 发明授权

US06573116B2 Ridge type semiconductor laser of laterally-coupled distributed feedback and method of manufacturing the same 失效
标题翻译：脊式半导体激光器的横向耦合分布式反馈及其制造方法
公开(公告)号：US06573116B2
公开(公告)日：2003-06-03
申请号：US09908560
申请日：2001-07-20
申请人： Yoshiaki Watanabe , Kiyoshi Takei , Nong Chen , Kiyofumi Chikuma
发明人： Yoshiaki Watanabe , Kiyoshi Takei , Nong Chen , Kiyofumi Chikuma
IPC分类号： H01L2100
CPC分类号： H01S5/22 , H01S5/12 , H01S5/1231 , H01S5/1237 , H01S5/209
摘要： There is provided a method of manufacturing a ridge type LC-DFB semiconductor laser in which a laser substrate having a cladding layer made of a material for a ridge stripe formed on an active layer made of semiconductor. A stripe mask is formed on the cladding layer to form two lateral flat portions from the cladding layer, by a selective wet etching, so as to form a ridge stripe protruding therefrom and having a flat top portion at which the stripe mask capped. A grating mask is formed on the two lateral flat portions, side walls of the ridge stripe and the stripe mask. The grating mask has a periodic structure in the direction in which the ridge stripe extends. The two lateral flat portions and the side walls of the ridge stripe are dry-etched through the grating mask and then the two lateral flat portions and the side walls of the ridge stripe are wet-etched to form a grating of the material for the ridge stripe on the two lateral flat portions, the side walls of the ridge stripe and the active layer, so as to define a bracket grating portion adjacent to the ridge stripe.
摘要翻译：提供了一种制造脊型LC-DFB半导体激光器的方法，其中具有由用于形成在由半导体制成的有源层上的用于脊条的材料制成的包层的激光基板。在包覆层上形成条纹掩模，通过选择性湿蚀刻从包覆层形成两个横向平坦部分，从而形成从其突出的脊条，并且具有条形掩模封盖的平坦的顶部。在两个侧面平坦部分，脊条和条纹掩模的侧壁上形成光栅掩模。栅格掩模在脊条延伸的方向上具有周期性结构。通过光栅掩模对棱条的两个横向平坦部分和侧壁进行干蚀刻，然后将脊条的两个侧向平坦部分和侧壁湿法蚀刻以形成用于脊的材料的光栅在两个横向平坦部分上的条纹，脊状条的边壁和有源层，以便限定与脊条相邻的托架光栅部分。

9. 发明授权

US06535670B1 Optical transmitter/receiver module and method of manufacturing the same 失效
标题翻译：光发射机/接收机模块及其制造方法
公开(公告)号：US06535670B1
公开(公告)日：2003-03-18
申请号：US09425939
申请日：1999-10-25
申请人： Kiyoshi Takei , Yoshiaki Watanabe , Nong Chen , Kiyofumi Chikuma
发明人： Kiyoshi Takei , Yoshiaki Watanabe , Nong Chen , Kiyofumi Chikuma
IPC分类号： G02B626
CPC分类号： G02B6/125 , G02B6/12004 , G02B6/12007 , G02B6/29361
摘要： An optical transmitter and receiver module de-multiplexes a multi-wavelength optical signal into at least an optical signal of one wavelength band, and receives and transmits the signal. The module includes a first substrate, with a cleavage plane, for supporting input and output wave guides which intersect each other at a portion on the cleavage plane and extend from the portion of intersection at an equal angle with respect to normal at the portion on the cleavage plane. The module also includes an interference filter that is in contact with the cleavage plane on the portion of intersection of the input and output wave guides of the first substrate. Further, the module includes a second substrate, with a cleavage plane in contact with the interference filter, for supporting a transmit/receive wave guide having receiver and transmitter wave guides which extend from the vicinity of the portion of intersection and are separated from each other.
摘要翻译：光发射机和接收机模块将多波长光信号解复用为至少一个波长带的光信号，并接收和发送信号。该模块包括具有解理平面的第一衬底，用于支撑在解理平面上的一部分处彼此相交的输入和输出波导，并且在第一衬底上的相对于法线的相交角度相对于法线相交劈裂平面。该模块还包括与第一基板的输入和输出波导的相交部分上的解理平面接触的干涉滤光器。此外，模块包括具有与干涉滤波器接触的解理面的第二基板，用于支撑具有从交叉部分附近延伸并彼此分离的接收器和发射器波导的发射/接收波导。

10. 发明授权

US06500687B2 Distributed feedback semiconductor laser element and method for making the same 失效
标题翻译：分布式反馈半导体激光元件及其制造方法
公开(公告)号：US06500687B2
公开(公告)日：2002-12-31
申请号：US09049470
申请日：1998-03-27
申请人： Kiyoshi Takei , Yoshiaki Watanabe , Nong Chen , Kiyofumi Chikuma
发明人： Kiyoshi Takei , Yoshiaki Watanabe , Nong Chen , Kiyofumi Chikuma
IPC分类号： H01S530
CPC分类号： H01S5/12 , H01S5/1231 , H01S5/2081 , H01S5/2231
摘要： A method for producing a distributed feedback semiconductor laser element includes the steps of forming a laser substrate, forming a ridge by etching the laser substrate, and forming a flattening layer on the ridge. A grating is then formed on the flattening layer and the grating is further transferred to the laser substrate on which the ridge is formed. The flattening layer is removed and electrodes are then formed.
摘要翻译：一种分布式反馈半导体激光元件的制造方法，其特征在于，包括：形成激光基板，通过蚀刻激光基板形成脊，在脊上形成平坦化层的工序。然后在平坦化层上形成光栅，并且光栅进一步转移到其上形成有脊的激光基板。去除扁平层，然后形成电极。

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