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1. 发明授权

US08149051B2 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US08149051B2
公开(公告)日：2012-04-03
申请号：US11340571
申请日：2006-01-27
申请人： Yoshinari Ichihashi , Ryu Shimizu , Kazuhiro Sasada
发明人： Yoshinari Ichihashi , Ryu Shimizu , Kazuhiro Sasada
IPC分类号： H03F1/32
CPC分类号： H01L31/02162 , H01L27/14623 , H01L27/14812 , H01L27/1485
摘要： A solid-state image sensor capable of suppressing color mixture while suppressing increase of load capacitances of transfer gates and a short circuit between two adjacent transfer gates is provided. This solid-state image sensor comprises a plurality of transfer gates and a shielding material line blocking light incident from above a prescribed pixel upon another pixel adjacent to the prescribed pixel. The shielding material line has a downward projecting portion on a region corresponding to at least one transfer gate entering an ON-state in photoreception.
摘要翻译：提供一种能够抑制混色的同时抑制传输门的负载电容的增加和两个相邻的传输门之间的短路的固态图像传感器。该固态图像传感器包括多个传输门和屏蔽材料线，该屏蔽材料线阻挡从与规定像素相邻的另一像素上的规定像素上方入射的光。屏蔽材料线在对应于在光接收中进入导通状态的至少一个传输栅极的区域上具有向下突出部分。

2. 发明申请

US20060170007A1 Solid-state image sensor 有权
标题翻译：固态图像传感器
公开(公告)号：US20060170007A1
公开(公告)日：2006-08-03
申请号：US11340571
申请日：2006-01-27
申请人： Yoshinari Ichihashi , Ryu Shimizu , Kazuhiro Sasada
发明人： Yoshinari Ichihashi , Ryu Shimizu , Kazuhiro Sasada
IPC分类号： H01L29/768
CPC分类号： H01L31/02162 , H01L27/14623 , H01L27/14812 , H01L27/1485
摘要： A solid-state image sensor capable of suppressing color mixture while suppressing increase of load capacitances of transfer gates and a short circuit between two adjacent transfer gates is provided. This solid-state image sensor comprises a plurality of transfer gates and a shielding material line blocking light incident from above a prescribed pixel upon another pixel adjacent to the prescribed pixel. The shielding material line has a downward projecting portion on a region corresponding to at least one transfer gate entering an ON-state in photoreception.
摘要翻译：提供一种能够抑制混色的同时抑制传输门的负载电容的增加和两个相邻的传输门之间的短路的固态图像传感器。该固态图像传感器包括多个传输门和屏蔽材料线，该屏蔽材料线阻挡从与规定像素相邻的另一像素上的规定像素上方入射的光。屏蔽材料线在对应于在光接收中进入导通状态的至少一个传输栅极的区域上具有向下突出部分。

3. 发明申请

US20050200711A1 Solid state imaging device and manufacturing method thereof 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20050200711A1
公开(公告)日：2005-09-15
申请号：US11074863
申请日：2005-03-09
申请人： Ryu Shimizu , Kazuhiro Sasada , Masahiro Oda
发明人： Ryu Shimizu , Kazuhiro Sasada , Masahiro Oda
IPC分类号： H01L27/148 , H04N5/225
CPC分类号： H01L27/14614 , H01L27/14806 , H01L27/1485 , H04N5/335 , H04N5/372
摘要： A solid state imaging device includes photoelectric conversion portions for performing photoelectric conversion, and transfer portions for transferring signal charge occurring at the photoelectric conversion portions. Each transfer portion includes a transfer electrode formed of polysilicon film or the like, and an insulating coating film formed of a material such as a silicon nitride film and so forth, which has a higher relative dielectric constant than that of the silicon oxide, for coating the bottom face, the upper face, and both side faces, of the transfer electrode. The silicon nitride film is formed with a film thickness which is greater than 0 nm and smaller than 60 nm, on both sides of the transfer electrode.
摘要翻译：固态成像装置包括用于进行光电转换的光电转换部分和用于传送在光电转换部分发生的信号电荷的转印部分。每个转印部分包括由多晶硅膜等形成的转印电极和由诸如氮化硅膜等的材料形成的绝缘涂膜，其具有比氧化硅更高的相对介电常数，用于涂覆转印电极的底面，上表面和两个侧面。在转移电极的两侧，形成厚度大于0nm且小于60nm的氮化硅膜。

4. 发明授权

US07112881B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07112881B2
公开(公告)日：2006-09-26
申请号：US10945945
申请日：2004-09-22
申请人： Takayuki Kaida , Ryu Shimizu , Mitsuru Okigawa , Tetsuya Miwa , Takashi Noma
发明人： Takayuki Kaida , Ryu Shimizu , Mitsuru Okigawa , Tetsuya Miwa , Takashi Noma
IPC分类号： H01L23/48 , H01L29/40 , H01L23/43
CPC分类号： H01L24/12 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/15788 , H01L2924/00
摘要： A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.
摘要翻译：提供了允许简化制造工艺的半导体器件。该半导体器件包括由单一材料构成的第一绝缘膜，其形成为与包括电路的半导体芯片的上表面接触，形成为与第一绝缘膜的上表面接触的第一线和形成为沿着半导体芯片的侧表面和下表面延伸并连接到通过部分去除第一绝缘膜而暴露的第一线的下表面的第二线。

5. 发明授权

US08154060B2 Image sensor and sensor unit 失效
标题翻译：图像传感器和传感器单元
公开(公告)号：US08154060B2
公开(公告)日：2012-04-10
申请号：US12183129
申请日：2008-07-31
申请人： Hayato Nakashima , Ryu Shimizu
发明人： Hayato Nakashima , Ryu Shimizu
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/148
摘要： This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.
摘要翻译：该图像传感器被形成为控制对应于第三电极的传输通道的一部分的电位或对应于第四电极的传输通道的另一部分的电位的电位的至少一个电位低于分别对应于第一电极和第二电极的传输通道在信号电荷转移操作和信号电荷增加操作中。

6. 发明授权

US07952121B2 Image sensor and sensor unit 有权
标题翻译：图像传感器和传感器单元
公开(公告)号：US07952121B2
公开(公告)日：2011-05-31
申请号：US12197515
申请日：2008-08-25
申请人： Mamoru Arimoto , Hayato Nakashima , Kaori Misawa , Ryu Shimizu
发明人： Mamoru Arimoto , Hayato Nakashima , Kaori Misawa , Ryu Shimizu
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L29/76825
摘要： An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.
摘要翻译：图像传感器包括用于存储和传送信号电荷的电荷存储部分，用于形成存储电荷存储部分中的信号电荷的电场的第一电极，用于增加存储在电荷存储部分中的信号电荷的电荷增加部分，以及第二电极，用于形成增加电荷增加部分中的信号电荷的另一电场，其中可存储在电荷存储部分中的信号电荷的量不小于可存储在电荷增加部分中的信号电荷的量。

7. 发明授权

US07642499B2 Image sensor comprising multilayer wire 失效
标题翻译：图像传感器包括多层线
公开(公告)号：US07642499B2
公开(公告)日：2010-01-05
申请号：US12023721
申请日：2008-01-31
申请人： Ryu Shimizu , Masahiro Oda
发明人： Ryu Shimizu , Masahiro Oda
IPC分类号： H01L27/00 , H04N3/14
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14641 , H01L27/14643
摘要： This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.
摘要翻译：该图像传感器包括用于增加电荷量的电荷增加部分，用于将调节与电荷增加部分相邻的区域的电压施加到规定电位的第一电极，与第一电极相邻设置的用于施加另一个电压增加的第二电极电荷增加部分中的电荷量，形成在用于向第一电极提供信号的规定层上的第一线和形成在与规定层不同的层上的第二线，用于向第二电极提供另一信号。

8. 发明申请

US20090316032A1 IMAGE SENSOR AND METHOD OF MANUFACTURING IMAGE SENSOR 审中-公开
标题翻译：图像传感器和图像传感器的制造方法
公开(公告)号：US20090316032A1
公开(公告)日：2009-12-24
申请号：US12479325
申请日：2009-06-05
申请人： Kaori Misawa , Mamoru Arimoto , Hayato Nakashima , Ryu Shimizu
发明人： Kaori Misawa , Mamoru Arimoto , Hayato Nakashima , Ryu Shimizu
IPC分类号： H04N5/335 , H01L21/28
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14612 , H01L27/14643 , H04N5/374
摘要： An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.
摘要翻译：图像传感器包括用于冲击电离和增加信号电荷的增加部分，用于将增加信号电荷的电压施加到增加部分的电荷增加电极和设置在电荷增加电极与增加部分之间的绝缘膜，其中绝缘膜包括由第一绝缘膜形成的由热氧化膜制成的第一绝缘膜和由氧化膜制成的第二绝缘膜。

9. 发明申请

US20050062146A1 Semiconductor device and method of fabricating semiconductor device 有权
标题翻译：半导体器件及半导体器件的制造方法
公开(公告)号：US20050062146A1
公开(公告)日：2005-03-24
申请号：US10945945
申请日：2004-09-22
申请人： Takayuki Kaida , Ryu Shimizu , Mitsuru Okigawa , Tetsuya Miwa , Takashi Noma
发明人： Takayuki Kaida , Ryu Shimizu , Mitsuru Okigawa , Tetsuya Miwa , Takashi Noma
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L21/768 , H01L23/12 , H01L23/31 , H01L23/485 , H01L23/04
CPC分类号： H01L24/12 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L2224/0231 , H01L2224/0401 , H01L2224/13099 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01033 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/014 , H01L2924/05042 , H01L2924/15788 , H01L2924/00
摘要： A semiconductor device allowing simplification of a fabrication process is provided. This semiconductor device comprises a first insulator film, consisting of a single material, formed to be in contact with the upper surface of a semiconductor chip including a circuit, a first wire formed to be in contact with the upper surface of the first insulator film and a second wire formed to extend along the side surface and the lower surface of the semiconductor chip and connected to the lower surface of the first wire exposed by partially removing the first insulator film.
摘要翻译：提供了允许简化制造工艺的半导体器件。该半导体器件包括由单一材料构成的第一绝缘膜，其形成为与包括电路的半导体芯片的上表面接触，形成为与第一绝缘膜的上表面接触的第一线和形成为沿着半导体芯片的侧表面和下表面延伸并连接到通过部分去除第一绝缘膜而暴露的第一线的下表面的第二线。

10. 发明申请

US20100270594A1 IMAGE SENSOR 审中-公开
标题翻译：图像传感器
公开(公告)号：US20100270594A1
公开(公告)日：2010-10-28
申请号：US12723155
申请日：2010-03-12
申请人： Ryu Shimizu , Mamoru Arimoto
发明人： Ryu Shimizu , Mamoru Arimoto
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14612 , H01L27/1464 , H01L27/14689
摘要： An image sensor according to the present invention includes a second conductivity type first impurity region provided on a surface of a first conductivity type semiconductor substrate for constituting a transfer channel for signal charges, a charge increasing portion provided on the first impurity region for increasing the amount of signal charges by impact ionization, an increasing electrode provided on the side of the surface of the semiconductor substrate for applying a voltage to the charge increasing portion, and a second conductivity type second impurity region opposed to the first impurity region through a prescribed region of the semiconductor substrate and suppliable with charges.
摘要翻译：根据本发明的图像传感器包括：第二导电型第一杂质区，设置在第一导电型半导体衬底的表面上，用于构成用于信号电荷的转移沟道;电荷增加部，设置在第一杂质区上用于增加量通过冲击电离形成的信号电荷的增加电极，设置在用于向电荷增加部分施加电压的半导体衬底的表面侧的增加的电极以及与第一杂质区相对的第二导电类型的第二杂质区，半导体衬底，并可充电。

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