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1. 发明申请

US20110039721A1 METHOD FOR PREDICTION ABOUT CARCINOGENICITY OF SUBSTANCE IN RODENT 审中-公开
标题翻译：关于物质致癌性的预测方法
公开(公告)号：US20110039721A1
公开(公告)日：2011-02-17
申请号：US12810100
申请日：2008-12-26
申请人： Yoshikuni Yakabe , Hiroshi Matsumoto , Fumiyo Saito , Koichi Saito , Kayo Sumida , Koji Nakayama , Masaru Sekijima
发明人： Yoshikuni Yakabe , Hiroshi Matsumoto , Fumiyo Saito , Koichi Saito , Kayo Sumida , Koji Nakayama , Masaru Sekijima
IPC分类号： C40B30/04
CPC分类号： C12Q1/6876 , C12Q2600/142 , C12Q2600/158
摘要： Disclosed is a method for predicting about the carcinogenicity of a substance of interest in a rodent, which comprises the steps of: administering a solution of the substance to a test group and administering a solvent used in the solution to a control group; extracting mRNA from each of the test group and the control group, and measuring the expression level of mRNA for each of genes obtained by selecting at least one gene from (A) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 1 to 5, (B) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 6 to 8 and (C) genes each comprising a nucleotide sequence depicted in any one of SEQ ID NOs: 9 to 32; determining whether or not a significant difference in the level of mRNA expressed from the gene is observed between the test group and the control group; and determining that the substance has carcinogenicity when a significant difference in the level of the expression of mRNA from any one of the genes is observed between the test group and the control group and the direction of increase or decrease in the level of the expression of mRNA from any one of the genes is the same as the tendency which is previously defined for each gene.
摘要翻译：公开了一种用于预测啮齿动物感兴趣的物质的致癌性的方法，其包括以下步骤：将所述物质的溶液施用于测试组并将所述溶液中使用的溶剂施用于对照组; 从每个测试组和对照组中提取mRNA，并通过选择至少一个来自（A）基因的基因测量每个基因的mRNA的表达水平，每个基因各自包含SEQ ID NO： 1〜5，（B）各自包含SEQ ID NO：6至8中任一项所示的核苷酸序列的基因和（C）各自包含SEQ ID NO：9至32中任一个所示的核苷酸序列的基因; 确定在测试组和对照组之间是否观察到从基因表达的mRNA水平的显着差异; 并且当在测试组和对照组之间观察到来自任何一个基因的mRNA的表达水平的显着差异以及mRNA表达水平的增加或降低的方向时，确定该物质具有致癌性来自任何一个基因与先前为每个基因定义的趋势相同。

2. 发明申请

US20090134028A1 Method of Estimating Effect of Test Chemical on Living Organisms 审中-公开
标题翻译：测试化学品对生物体的影响估算方法
公开(公告)号：US20090134028A1
公开(公告)日：2009-05-28
申请号：US11992421
申请日：2006-09-22
申请人： Hidenori Yamanaka , Yoshikuni Yakabe , Yoshihisa Sudo , Kayo Sumida , Koji Nakayama
发明人： Hidenori Yamanaka , Yoshikuni Yakabe , Yoshihisa Sudo , Kayo Sumida , Koji Nakayama
IPC分类号： B01D57/02
CPC分类号： G01N33/5088 , G01N33/5023
摘要： A method of predicting an effect of a test chemical on living organisms, which comprises: a step of administering a plurality of chemicals whose effects on living organisms are known, to respective chemical dosed groups, administering a test chemical to a test chemical dosed group, collecting proteins from each group after a definite period of time, separating the proteins by two-dimensional gel electrophoresis, measuring the signal intensities of spots of the proteins and modified proteins formed therefrom, and calculating a signal intensity ratio of at least two spots, and a step of comparing the signal intensity ratio of test chemical dosed group with the signal intensity ratio of each chemical dosed group.
摘要翻译：一种预测试验化学品对活生物体的作用的方法，其特征在于，包括：将对生物体的影响的多种化学品施用于各化学剂的步骤，向测试化学物质给药组施用测试化学品，在一定时间内收集每组蛋白质，通过二维凝胶电泳分离蛋白质，测量蛋白质点和由其形成的修饰蛋白质的信号强度，并计算至少两个点的信号强度比，测试化学剂量组的信号强度比与每个化学剂量组的信号强度比进行比较的步骤。

3. 发明授权

US4508562A Benzylsulfinyl pyridine-N-oxides and their herbicidal method of use 失效
标题翻译：苄基亚磺酰基吡啶-N-氧化物及其除草方法
公开(公告)号：US4508562A
公开(公告)日：1985-04-02
申请号：US498990
申请日：1983-05-27
申请人： Koji Nakayama , Ryo Yoshida , Hiroshi Matsumoto
发明人： Koji Nakayama , Ryo Yoshida , Hiroshi Matsumoto
IPC分类号： A01N43/40 , C07D213/89 , C07D213/71
CPC分类号： C07D213/89 , A01N43/40
摘要： Benzylsulfinyl pyridine-N-oxides represented by the formula: ##STR1## wherein X is a chlorine atom or a bromine atom; and Y and Z, which may be the same or different, are each a chlorine atom or a fluorine atom, is disclosed. A process for producing the same, and a herbicide containing the same as an active ingredient are also disclosed.
摘要翻译：由下式表示的苄基亚磺酰基吡啶-N-氧化物：其中X是氯原子或溴原子; 和Y和Z可以相同或不同，分别为氯原子或氟原子。还公开了一种制备该方法的方法和含有该活性成分的除草剂。

4. 发明申请

US20140045680A1 METHOD FOR MANUFACTURING METALLIC GLASS NANOWIRE, METALLIC GLASS NANOWIRE MANUFACTURED THEREBY, AND CATALYST CONTAINING METALLIC GLASS NANOWIRE 有权
标题翻译：制造金属玻璃纳米管的方法，制造的金属玻璃纳米管和含有金属玻璃纳米管的催化剂
公开(公告)号：US20140045680A1
公开(公告)日：2014-02-13
申请号：US14112507
申请日：2012-04-17
申请人： Koji Nakayama , Yoshihiko Yokoyama
发明人： Koji Nakayama , Yoshihiko Yokoyama
IPC分类号： B01J27/185 , B01J23/755
CPC分类号： B01J27/1853 , B01J21/066 , B01J23/42 , B01J23/44 , B01J23/755 , B01J35/06 , B22F1/0025 , B22F9/002 , B22F9/082 , B22F2999/00 , B82Y30/00 , C22C1/002 , C22C1/03 , C22C1/0433 , C22C1/0458 , C22C1/0466 , C22C28/00 , C22C33/003 , C22C33/02 , C22C38/002 , C22C45/00 , C22C45/003 , C22C45/02 , C22C45/04 , C22C45/10 , B22F2202/03
摘要： Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state.
摘要翻译：提供了容易制造大体积的具有极小直径的金属玻璃纳米线的方法。该金属玻璃纳米线的制造方法的特征在于，熔融金属玻璃或其母合金以过冷却状态进行气体雾化。

5. 发明授权

US08178949B2 Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage 失效
标题翻译：双极半导体器件及其制造方法以及用于控制齐纳电压的方法
公开(公告)号：US08178949B2
公开(公告)日：2012-05-15
申请号：US12525198
申请日：2008-01-31
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
IPC分类号： H01L21/331
CPC分类号： H01L29/866 , H01L29/06 , H01L29/0615 , H01L29/1608 , H01L29/36 , H01L29/66106 , H01L29/8613
摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.
摘要翻译：双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层第二导电类型，其中基板和导电层按顺序层压。

6. 发明授权

US08154026B2 Silicon carbide bipolar semiconductor device 失效
标题翻译：碳化硅双极半导体器件
公开(公告)号：US08154026B2
公开(公告)日：2012-04-10
申请号：US12097019
申请日：2006-12-13
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
IPC分类号： H01L29/15
CPC分类号： H01L29/1604 , H01L21/0465 , H01L21/047 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8613
摘要： In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.
摘要翻译：在具有由SiC单晶衬底的表面生长的SiC外延层的具有第一导电类型的SiC漂移层和第二导电类型的SiC载流子注入层的台阶结构的SiC双极型半导体器件中，形成防止堆垛层错及其面积的膨胀，从而防止正向电压的增加。此外，提高了反向偏置中的耐受电压的特性。在台面壁或台面壁和台面周边上形成正向操作降解防止层，以在空间上分离台面壁的表面与pn结界面。在一个实施例中，正向操作降解防止层由在施加反向电压期间具有等电位的第二导电类型的碳化硅低电阻层构成。在另一个实施方案中，正向操作降解防止层由第二导电类型的碳化硅导电层构成，并且在施加反向电压期间具有等电位的金属层形成在碳化硅导电层的表面上。在另一个实施方案中，正向操作降解防止层由高电阻非晶层组成。

7. 发明授权

US08093599B2 Silicon carbide Zener diode 失效
标题翻译：碳化硅齐纳二极管
公开(公告)号：US08093599B2
公开(公告)日：2012-01-10
申请号：US12597121
申请日：2008-04-25
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
IPC分类号： H01L29/866
CPC分类号： H01L29/866 , H01L29/0615 , H01L29/1608 , H01L29/66106
摘要： A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.
摘要翻译：一种碳化硅齐纳二极管是具有台面结构的双极半导体器件，包括形成在其上的第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层和碳化硅导电层形成在第一导电类型的碳化硅导电层上的第二导电类型，其中在第一导电类型的碳化硅导电层与第二导电类型的碳化硅导电层之间的接合处以反偏压形成的耗尽层导电类型不到达形成在第一导电类型的碳化硅导电层中的台面角。

8. 发明授权

US08079698B2 Inkjet recording apparatus 有权
标题翻译：喷墨记录装置
公开(公告)号：US08079698B2
公开(公告)日：2011-12-20
申请号：US11782725
申请日：2007-07-25
申请人： Koji Nakayama
发明人： Koji Nakayama
IPC分类号： B41J2/01
CPC分类号： B41J29/17 , B41J11/0015 , B41J11/007
摘要： There is disclosed an inkjet recording apparatus including a feeding device, a remover, and an inkjet head. The feeding device feeds a recording medium along a feed path passing through a removing area. A part of an opposingly-feeding surface extends opposed to the ink jet head and along the feed path, and the removing area is located under the opposingly-feeding surface and within the opposingly-feeding surface as seen in a vertical direction. The remover removes foreign matter from a surface of the recording medium during the recording medium is fed through the removing area by the feeding device. The inkjet head is disposed downstream of the remover with respect to a feeding direction in which the recording medium is fed. The inkjet head has an ink ejection surface in which a nozzle is open, and an ink droplet is ejected from the nozzle toward a recording surface of the recording medium while the recording medium is fed along at least a part of the opposingly-feeding surface.
摘要翻译：公开了一种喷墨记录装置，其包括进料装置，去除剂和喷墨头。馈送装置沿着通过去除区域的馈送路径馈送记录介质。反向进给表面的一部分与喷墨头相对并且沿着进给路径延伸，并且在垂直方向上看去除区域位于相对输送表面下方和相对进给表面内。在记录介质通过进给装置通过去除区域供给时，去除器从记录介质的表面去除异物。喷墨头相对于记录介质被供给的进给方向设置在去除器的下游。喷墨头具有其中喷嘴打开的喷墨表面，并且当记录介质沿着相对输送表面的至少一部分进给时，墨滴从喷嘴朝向记录介质的记录表面喷射。

9. 发明授权

US07960737B2 Silicon carbide semiconductor device and manufacturing method therefor 失效
公开(公告)号：US07960737B2
公开(公告)日：2011-06-14
申请号：US12801679
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.

10. 发明授权

US07960257B2 Silicon carbide semiconductor device and manufacturing method therefor 失效
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US07960257B2
公开(公告)日：2011-06-14
申请号：US12801680
申请日：2010-06-21
申请人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
发明人： Koji Nakayama , Yoshitaka Sugawara , Katsunori Asano , Hidekazu Tsuchida , Isaho Kamata , Toshiyuki Miyanagi , Tomonori Nakamura
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/868 , H01L29/045 , H01L29/0619 , H01L29/1608 , H01L29/66068 , H01L29/73 , H01L29/7397
摘要： With a view to preventing increases in forward voltage due to a change with the lapse of time of a bipolar semiconductor device using a silicon carbide semiconductor, a buffer layer, a drift layer and other p-type and n-type semiconductor layers are formed on a growth surface, which is given by a surface of a crystal of a silicon carbide semiconductor having an off-angle θ of 8 degrees from a (000-1) carbon surface of the crystal, at a film growth rate having a film-thickness increasing rate per hour h of 10 μm/h, which is three times or more higher than conventional counterparts. The flow rate of silane and propane material gases and dopant gases is largely increased to enhance the film growth rate.
摘要翻译：为了防止由于使用碳化硅半导体的双极性半导体器件随时间的变化引起的正向电压的增加，缓冲层，漂移层和其他p型和n型半导体层形成在生长表面，其由具有偏角角度的硅碳化物半导体的晶体的表面给出; （000-1）碳表面8度，以每小时薄膜增加率为10μm/小时的膜生长速率，比常规对应物高3倍以上。硅烷和丙烷材料气体和掺杂气体的流速大大增加，以提高膜生长速率。

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