专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07465673B2 Method and apparatus for bilayer photoresist dry development 失效
标题翻译：用于双层光致抗蚀剂干式显影的方法和装置
公开(公告)号：US07465673B2
公开(公告)日：2008-12-16
申请号：US10736782
申请日：2003-12-17
申请人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
发明人： Yoshiki Igarashi , Kouichiro Inazawa , Kimihiro Higuchi , Vaidyanathan Balasubramaniam , Eiichi Nishimura , Ralph Kim , Philip Sansone , Masaaki Hagihara
IPC分类号： H01L21/00
CPC分类号： H01L21/31138 , G03F7/091 , H01L21/31144 , H01L21/76802
摘要： A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH3/O2, N2/H2/O2, N2/H2/CO, NH3/CO, or NH3/CO/O2 based chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).
摘要翻译：一种用于在等离子体处理系统中蚀刻衬底上的有机抗反射涂层（ARC）层的方法，包括：引入包含氮（N），氢（H）和氧（O）的工艺气体; 从工艺气体形成等离子体; 并将衬底暴露于等离子体。工艺气体可以例如构成基于NH 3 / O 2，N 2 / H 2 / O 2，N 2 / H 2 / CO，NH 3 / CO或NH 3 / CO / O 2的化学。另外，工艺化学可以进一步包括添加氦。本发明还提供一种用于形成用于在衬底上蚀刻薄膜的双层掩模的方法，其中所述方法包括：在所述衬底上形成所述薄膜; 在薄膜上形成ARC层; 在ARC层上形成光刻胶图案; 以及使用包含氮（N），氢（H）和氧（O）的工艺气体的蚀刻工艺将光致抗蚀剂图案转移到ARC层。

2. 发明授权

US07169440B2 Method for removing photoresist and etch residues 失效
标题翻译：去除光刻胶和蚀刻残留物的方法
公开(公告)号：US07169440B2
公开(公告)日：2007-01-30
申请号：US10259768
申请日：2002-09-30
申请人： Vaidyanathan Balasubramaniam , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
发明人： Vaidyanathan Balasubramaniam , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
IPC分类号： B05D5/06
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/31138
摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译：提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和蚀刻在电介质层的先前等离子体蚀刻期间形成的残留物的方法。灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物并从室表面除去有害的氟碳残余物。在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。两步法减少了常规一步灰化过程中常见的记忆效应。端点检测方法可用于监测灰化过程。

3. 发明授权

US06849559B2 Method for removing photoresist and etch residues 有权
标题翻译：去除光刻胶和蚀刻残留物的方法
公开(公告)号：US06849559B2
公开(公告)日：2005-02-01
申请号：US10259381
申请日：2002-09-30
申请人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
发明人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagiwara , Eiichi Nishimura , Kouichiro Inazawa
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/302 , H01L21/304 , H01L21/31 , H01L21/461
CPC分类号： H01L21/76814 , G03F7/427 , H01L21/02063 , H01L21/31138
摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译：提供了一种用于等离子体灰化以去除光刻胶残留物的蚀刻残留物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。灰化方法使用包含含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻以除去大量的光致抗蚀剂残余物和蚀刻残留物并从室表面除去有害的氟碳残余物。在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。两步法减少了常规一步灰化过程中常见的记忆效应。端点检测方法可用于监测灰化过程。

4. 发明申请

US20060154486A1 Low-pressure removal of photoresist and etch residue 有权
标题翻译：低压去除光致抗蚀剂和蚀刻残留物
公开(公告)号：US20060154486A1
公开(公告)日：2006-07-13
申请号：US11032021
申请日：2005-01-11
申请人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
发明人： Vaidyanathan Balasubramaniam , Yasunori Hatamura , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32082 , H01J2237/3342 , H01L21/31138 , H01L22/26
摘要： A method is provided for plasma ashing to remove photoresist remnants and etch residues formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving a hydrogen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluorocarbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译：提供了一种用于等离子体灰化以去除光刻胶残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。灰化方法使用涉及含氢气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物并从室表面除去有害的碳氟化合物残留物。在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。在第二清洗步骤中使用小于20mTorr的室压力。两步法减少了常规一步灰化过程中常见的记忆效应。端点检测方法可用于监测灰化过程。

5. 发明申请

US20060144817A1 Low-pressure removal of photoresist and etch residue 有权
标题翻译：低压去除光致抗蚀剂和蚀刻残留物
公开(公告)号：US20060144817A1
公开(公告)日：2006-07-06
申请号：US11024747
申请日：2004-12-30
申请人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
发明人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa
IPC分类号： G01L21/30 , G01R31/00 , B44C1/22 , H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译：提供了一种用于低压等离子体灰化以去除光致抗蚀剂残余物和蚀刻在介电层的先前等离子体蚀刻期间形成的残留物的方法。灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物并从室表面除去有害的氟碳残余物。在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。在第二清洗步骤中使用小于20mTorr的室压力。两步法减少了常规一步灰化过程中常见的记忆效应。端点检测方法可用于监测灰化过程。

6. 发明授权

US07700494B2 Low-pressure removal of photoresist and etch residue 有权
标题翻译：低压去除光致抗蚀剂和蚀刻残留物
公开(公告)号：US07700494B2
公开(公告)日：2010-04-20
申请号：US11024747
申请日：2004-12-30
申请人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa , Rie Inazawa, legal representative
发明人： Vaidyanathan Balasubramaniam , Masaaki Hagihara , Eiichi Nishimura , Koichiro Inazawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/02063
摘要： A method is provided for low-pressure plasma ashing to remove photoresist remnants and etch residues that are formed during preceding plasma etching of dielectric layers. The ashing method uses a two-step plasma process involving an oxygen-containing gas, where low or zero bias is applied to the substrate in the first cleaning step to remove significant amount of photoresist remnants and etch residues from the substrate, in addition to etching and removing detrimental fluoro-carbon residues from the chamber surfaces. An increased bias is applied to the substrate in the second cleaning step to remove the remains of the photoresist and etch residues from the substrate. A chamber pressure less than 20 mTorr is utilized in the second cleaning step. The two-step process reduces the memory effect commonly observed in conventional one-step ashing processes. A method of endpoint detection can be used to monitor the ashing process.
摘要翻译：提供了一种用于低压等离子体灰化以去除光刻胶残余物和蚀刻在电介质层的先前等离子体蚀刻期间形成的残留物的方法。灰化方法使用包含含氧气体的两步等离子体工艺，其中在第一清洁步骤中向衬底施加低或零偏压，以除去蚀刻之外的大量光致抗蚀剂残余物和蚀刻残留物并从室表面除去有害的氟碳残余物。在第二清洗步骤中对衬底施加增加的偏压以除去光刻胶的残余物并从衬底上蚀刻残留物。在第二清洗步骤中使用小于20mTorr的室压力。两步法减少了常规一步灰化过程中常见的记忆效应。端点检测方法可用于监测灰化过程。

7. 发明授权

US08741396B2 Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film, method for manufacturing semiconductor device, and storage medium in which control program is stored 失效
标题翻译：无定形碳氮化物膜的形成方法，无定形氮化碳膜，多层抗蚀剂膜，半导体装置的制造方法以及存储控制程序的存储介质
公开(公告)号：US08741396B2
公开(公告)日：2014-06-03
申请号：US13060821
申请日：2009-06-30
申请人： Hiraku Ishikawa , Eiichi Nishimura
发明人： Hiraku Ishikawa , Eiichi Nishimura
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , C23C16/347 , C23C16/5096 , G03F7/091 , H01L21/02115 , H01L21/02274 , H01L21/3146 , H01L21/318
摘要： An amorphous carbon film, which has excellent etching resistance and is capable of reducing reflectance when a resist film is exposed to light, is form. A method for manufacturing a semiconductor device includes forming an object film to be etched on a wafer, supplying a process gas containing a CO gas and an N2 gas into a processing container, forming an amorphous carbon nitride film from the supplied CO gas and N2 gas, forming a silicon oxide film on the amorphous carbon nitride film, forming an ArF resist film on the silicon oxide film, patterning the ArF resist film, etching the silicon oxide film by using the ArF resist film as a mask, etching the amorphous carbon nitride film by using the silicon oxide film as a mask, and etching the object film to be etched by using the amorphous carbon nitride film as a mask.
摘要翻译：形成了具有优异的耐蚀刻性并且当抗蚀剂膜暴露于光时能够降低反射率的无定形碳膜。一种制造半导体器件的方法包括在晶片上形成待蚀刻的目标薄膜，将含有CO气体和N 2气体的工艺气体供给到处理容器中，从供给的CO气体和N 2气体形成无定形氮化碳膜在无定形氮化碳膜上形成氧化硅膜，在氧化硅膜上形成ArF抗蚀剂膜，对ArF抗蚀剂膜进行构图，使用ArF抗蚀剂膜作为掩模蚀刻氧化硅膜，蚀刻无定形碳氮化物通过使用氧化硅膜作为掩模，并且通过使用无定形氮化碳膜作为掩模来蚀刻待蚀刻的目标膜。

8. 发明授权

US08530354B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08530354B2
公开(公告)日：2013-09-10
申请号：US13415363
申请日：2012-03-08
申请人： Masato Kushibiki , Eiichi Nishimura
发明人： Masato Kushibiki , Eiichi Nishimura
IPC分类号： H01L21/311
CPC分类号： H01L21/32139 , H01L21/0337 , H01L21/0338 , H01L21/3086 , H01L21/3088 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/32136
摘要： The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer.
摘要翻译：本发明提供一种基板处理方法，用于处理至少包括依次堆叠的处理层，中间层和掩模层的基板。掩模层包括被配置为暴露中间层的一部分的孔。基板处理方法包括：材料沉积步骤，其在所述孔的侧表面上沉积材料，并且通过用沉积气体产生的等离子体蚀刻所述中间层的暴露部分来暴露所述处理层的一部分;以及蚀刻步骤蚀刻处理层的暴露部分。

9. 发明授权

US08518828B2 Semiconductor device fabrication method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08518828B2
公开(公告)日：2013-08-27
申请号：US12623556
申请日：2009-11-23
申请人： Tetsuo Endoh , Eiichi Nishimura
发明人： Tetsuo Endoh , Eiichi Nishimura
IPC分类号： H01L21/311
CPC分类号： H01L21/3086 , H01L21/3088 , H01L29/66181 , H01L29/66787 , H01L29/66795
摘要： According to a disclosed semiconductor device fabrication method according to one embodiment of the present invention, a layer having a line-and-space pattern extending in one direction is etched using another layer having a line-and-space pattern extending in another direction intersecting the one direction, thereby obtaining a mask having two-dimensionally arranged dots. An underlying layer is etched using the mask, thereby providing two-dimensionally arranged pillars.
摘要翻译：根据本发明的一个实施例公开的半导体器件制造方法，使用具有在与另一方向相交的另一个方向上延伸的线间距图案的另一层蚀刻具有沿一个方向延伸的线间距图案的层从而获得具有二维排列的点的掩模。使用掩模蚀刻下层，由此提供二维布置的柱。

10. 发明授权

US08491804B2 Substrate processing method 有权
标题翻译：基板加工方法
公开(公告)号：US08491804B2
公开(公告)日：2013-07-23
申请号：US12721962
申请日：2010-03-11
申请人： Masato Kushibiki , Eiichi Nishimura
发明人： Masato Kushibiki , Eiichi Nishimura
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/311
CPC分类号： H01L21/0273 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144
摘要： A method of processing a substrate having a processing target layer and an organic film serving as a mask layer includes a mineralizing process of mineralizing the organic film. The mineralizing process includes an adsorption process for allowing a silicon-containing gas to be adsorbed onto a surface of the organic film; and an oxidation process for oxidizing the adsorbed silicon-containing gas to be converted into a silicon oxide film. A monovalent aminosilane is employed as the silicon-containing gas.
摘要翻译：处理具有加工对象层和作为掩模层的有机膜的基板的处理方法包括使有机膜成矿化的矿化工序。矿化方法包括使含硅气体吸附在有机膜的表面上的吸附方法; 以及用于氧化被吸收的待转化为氧化硅膜的含硅气体的氧化工艺。使用一价氨基硅烷作为含硅气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式