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    • 2. 发明授权
    • YIG thin film microwave apparatus
    • YIG薄膜微波设备
    • US4746884A
    • 1988-05-24
    • US883603
    • 1986-07-09
    • Yoshikazu MurakamiHideo TanakaMasami MiyakeSeigo ItoHitoshi TamadaToshiro Yamada
    • Yoshikazu MurakamiHideo TanakaMasami MiyakeSeigo ItoHitoshi TamadaToshiro Yamada
    • H01F10/24H01P1/218H01P7/00H01P7/08
    • H01P1/218H01F10/245
    • Disclosed is a YIG thin film device utilizing ferrimagnetic resonance effect, a magnetic circuit having a gap of length lg where the YIG thin film device being provided and applying a bias magnetic field perpendicular to a film surface of the YIG thin film device, the magnetic circuit including a permanent magnet having a thickness lm and a soft magnetic plate having a thickness lx, the permanent magnet satisfying the characteristics ##EQU1## the soft magnetic plate satisfying the characteristics ##EQU2## wherein fo is resonance frequency of the YIG thin film device,.gamma. is gyromagnetic ratio of the YIG thin filmNz.sup.Y is demagnetization factor of the YIG thin film4.pi.Mso.sup.Y is saturation magnetization of the YIG thin film at room temperature,4.pi.Mso.sup.x is saturation magnetization of the soft magnetic plate,Br.sup.o is remanence of the permanent magnet at room temperature,.alpha..sub.1.sup.B is first order temperature coefficient of the remanence of the permanent magnet near room temperature,.alpha..sub.1.sup.Y is first order temperature coefficient of the saturation magnetization of the YIG thin film near room temperature,.alpha..sub.1.sup.x is first order temperature coefficient of the saturation magnetization of the soft magnetic plate near room temperatureand, the thickness lm and lx being selected to improve temperature dependency of the resonance frequency.
    • 公开了利用亚铁磁共振效应的YIG薄膜器件,具有长度为lg的间隙的磁路,其中设置了YIG薄膜器件,并施加垂直于YIG薄膜器件的膜表面的偏置磁场,磁路 包括具有厚度lm的永磁体和厚度为lx的软磁性板,所述永磁体满足特性Bro>(fo / gamma)+ NzY4 pi MsoY< IMAGE>软磁性板满足特性4 pi MsoX fo / gamma)+ NzY4 pi MsoY 其中fo是YIG薄膜器件的谐振频率,γ是YIG薄膜的回磁比NzY是YIG薄膜4的去磁因子pi MsoY是YIG的饱和磁化 薄膜在室温下,4 pi Msox是软磁板的饱和磁化,Bro是永磁体在室温下的剩磁,α1B是一级温度系数 永久磁铁在室温附近的剩余磁通量α1Y是在室温附近的YIG薄膜的饱和磁化强度的一阶温度系数,α1x是软磁板在室内的饱和磁化强度的一阶温度系数 温度,并且选择厚度lm和lx以改善谐振频率的温度依赖性。
    • 4. 发明授权
    • Receiving circuit for converting signals comprising at least two
ferromagnetic resonators
    • 用于转换包括至少两个铁磁谐振器的信号的接收电路
    • US4704739A
    • 1987-11-03
    • US740899
    • 1985-06-03
    • Yoshikazu MurakamiSeigo ItoToshiro Yamada
    • Yoshikazu MurakamiSeigo ItoToshiro Yamada
    • H03J3/04H01P1/215H01P1/217H01P1/218H01P7/00H03B5/18H03J3/16H04B1/26
    • H01P1/215H03J3/16
    • A signal converter comprises a filter formed of a first ferromagnetic resonator which supplied with an input signal that is to be converted and produces a filtered signal having a first frequency, a local oscillator formed of an active element and a second ferromagnetic resonator connected to the active element, produces an oscillating signal having a second frequency, a mixer receives and mixes the filtered signal and oscillating signal and produces a converted signal, the first ferromagnetic resonator is formed of a first ferrimagnetic crystal, a microstrip line magnetically coupled to the ferrimagnetic crystal and a first D.C. bias magnetic field means which applies a first D.C. bias magnetic field to the first ferrimagnetic crystal, the second ferromagnetic resonator is formed of a second ferrimagnetic crystal, a second microstrip line is magnetically coupled to the second ferrimagnetic crystal, and a second D.C. bias magnetic field means which applies a second D.C. bias magnetic field to the second ferrimagnetic crystal. The first and second ferrimagnetic crystals are composed of ferrimagnetic thin films such as YIG film formed by a thin film forming technique, such as liquid phase epitaxial growth.
    • 信号转换器包括由第一铁磁谐振器形成的滤波器,该第一铁磁谐振器提供有待转换的输入信号并产生具有第一频率的滤波信号,由有源元件形成的本地振荡器和连接到有源元件的第二铁磁谐振器 产生具有第二频率的振荡信号,混频器接收并混合经滤波的信号和振荡信号并产生转换的信号,第一铁磁谐振器由第一亚铁磁晶体,磁耦合到亚铁磁晶体的微带线,以及 第一直流偏置磁场装置,其向第一亚铁磁晶体施加第一直流偏置磁场,第二铁磁谐振器由第二亚铁磁晶体形成,第二微带线被磁耦合到第二亚铁磁晶体,第二直流偏置磁场 施加第二DC偏置磁场f的偏置磁场装置 连接到第二个铁磁晶体。 第一和第二亚铁磁晶体由诸如液相外延生长的薄膜形成技术形成的诸如YIG膜的亚铁磁性薄膜组成。
    • 5. 发明授权
    • Ferromagnetic resonator
    • 铁磁谐振器
    • US4679015A
    • 1987-07-07
    • US844984
    • 1986-03-27
    • Yoshikazu MurakamiSeigo ItoHiromi OkamotoHideo Tanaka
    • Yoshikazu MurakamiSeigo ItoHiromi OkamotoHideo Tanaka
    • H01P5/08H01P1/218H01P7/08
    • H01P1/218
    • A ferromagnetic resonator comprises a nonmagnetic substrate, a ferrimagnetic thin film element formed on a major surface of the nonmagnetic substrate, a strip line for example formed on another major surface of the nonmagnetic substrate and electromagnetically coupled to the ferrimagnetic thin film element, a conductive wall facing the strip line and spaced therefrom a predetermined distance, an end of the strip line being connected by the conductive wall to ground potential and a bias magnetic field source applying a D.C. magnetic field to the ferrimagnetic thin film perpendicular to the major surface thereof. Such an arrangement enables a drastic reduction in the effective dielectric constant of the transmission lines, whereby a filter with a high center frequency of the order of at least ten gigahertz can be achieved despite the short type structure.
    • 铁磁谐振器包括非磁性衬底,形成在非磁性衬底的主表面上的铁磁性薄膜元件,例如形成在非磁性衬底的另一个主表面上并与电磁耦合到铁氧体薄膜元件的导电壁 面对带状线并与之隔开预定距离,带状线的端部由导电壁连接到接地电位,偏置磁场源将垂直于其主表面的铁磁性薄膜施加直流磁场。 这种布置使得能够大大降低传输线的有效介电常数,由此尽管具有短型结构,但是可以实现具有至少十千兆赫数量级的高中心频率的滤波器。