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    • 4. 发明授权
    • Organic field effect transistor and semiconductor device
    • 有机场效应晶体管和半导体器件
    • US08049206B2
    • 2011-11-01
    • US11657718
    • 2007-01-25
    • Shinobu FurukawaRyota ImahayashiKaoru Kato
    • Shinobu FurukawaRyota ImahayashiKaoru Kato
    • H01L51/30
    • C07D209/88H01L51/0059H01L51/006H01L51/0061H01L51/0072H01L51/0508
    • It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
    • 本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管,以及包括该有机场效应晶体管的半导体器件。 在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层,作为有机化合物,可以使用通式(1)表示的咔唑衍生物 ) 用来。 通过在源电极和漏电极中的至少一部分中提供复合层,可以减少导电层和半导体层之间的界面处的能量势垒。
    • 6. 发明申请
    • Light Emitting Element, Light Emitting Device and Electric Appliance Using the Same
    • 发光元件,发光元件及使用其的电器
    • US20080185957A1
    • 2008-08-07
    • US11886384
    • 2006-03-17
    • Kaoru KatoShunpei Yamazaki
    • Kaoru KatoShunpei Yamazaki
    • H01J1/62
    • H01L51/5048
    • It is an object of the present invention to provide a light emitting element with low drive voltage. In addition, it is another object to provide a light emitting device having the light emitting element. Further in addition, it is another object to provide an electric appliance which has a light emitting element with low drive voltage. A light emitting element of the present invention comprises a pair of electrodes, a layer containing a light emitting element and a layer containing a mixture material which contains a conductive material formed from an inorganic compound and an insulating material formed from an inorganic compound, which are interposed between the pair of electrodes, wherein the layer containing the mixture material has a resistivity of 50,000 to 1,000,000 ohm cm, preferably, 200,000 to 500,000 ohm cm. The drive voltage of the light emitting element can be lowered with the foregoing structure.
    • 本发明的目的是提供一种具有低驱动电压的发光元件。 另外,另一个目的是提供一种具有发光元件的发光器件。 此外,另一目的是提供一种具有低驱动电压的发光元件的电器。 本发明的发光元件包括一对电极,包含发光元件的层和含有由无机化合物形成的导电材料和由无机化合物形成的绝缘材料的混合材料的层,它们是 插入在该对电极之间,其中含有混合材料的层的电阻率为50,000至1,000,000欧姆厘米,优选为20万至50万欧姆厘米。 通过上述结构,能够降低发光元件的驱动电压。
    • 8. 发明授权
    • Light emitting element, light emitting device and electric appliance using the same
    • 发光元件,发光元件及使用其的电器
    • US08476827B2
    • 2013-07-02
    • US13294458
    • 2011-11-11
    • Kaoru KatoShunpei Yamazaki
    • Kaoru KatoShunpei Yamazaki
    • H01J1/62H01J63/04
    • H01L51/5048
    • It is an object of the present invention to provide a light emitting element with low drive voltage. In addition, it is another object to provide a light emitting device having the light emitting element. Further in addition, it is another object to provide an electric appliance which has a light emitting element with low drive voltage. A light emitting element of the present invention comprises a pair of electrodes, a layer containing a light emitting element and a layer containing a mixture material which contains a conductive material formed from an inorganic compound and an insulating material formed from an inorganic compound, which are interposed between the pair of electrodes, wherein the layer containing the mixture material has a resistivity of 50,000 to 1,000,000 ohm cm, preferably, 200,000 to 500,000 ohm cm. The drive voltage of the light emitting element can be lowered with the foregoing structure.
    • 本发明的目的是提供一种具有低驱动电压的发光元件。 另外,另一个目的是提供一种具有发光元件的发光器件。 此外,另一目的是提供一种具有低驱动电压的发光元件的电器。 本发明的发光元件包括一对电极,包含发光元件的层和含有由无机化合物形成的导电材料和由无机化合物形成的绝缘材料的混合材料的层,它们是 插入在该对电极之间,其中含有混合材料的层的电阻率为50,000至1,000,000欧姆厘米,优选为20万至50万欧姆厘米。 通过上述结构,能够降低发光元件的驱动电压。
    • 10. 发明授权
    • Memory device and semiconductor device
    • 存储器件和半导体器件
    • US07875881B2
    • 2011-01-25
    • US12054914
    • 2008-03-25
    • Hisao IkedaTakahiro IbeJunichi KoezukaKaoru Kato
    • Hisao IkedaTakahiro IbeJunichi KoezukaKaoru Kato
    • H01L29/08
    • H01L27/286H01L27/112H01L27/115Y10S428/917Y10T428/24942
    • Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.
    • 目的是解决对存储元件的小型化的抑制和其制造过程的复杂性,并且提供一种非易失性存储器件和半导体器件,每个非易失性存储器件和半导体器件具有存储器件,其中可以额外地写入数据,除了在制造时, 可以防止由数据重写引起的伪造等,以及便宜且非易失性的存储器件和半导体器件。 本发明提供了一种半导体器件,其包括多个存储元件,每个存储元件分别具有第一导电层,位于第一导电层旁边的第二导电层和设置在同一绝缘膜上的混合膜。 混合膜包含无机化合物,有机化合物和卤素原子,并且设置在第一导电层和第二导电层之间。