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    • 8. 发明授权
    • Light-emitting semiconductor device of improved efficiency
    • 发光半导体器件效率提高
    • US07498609B2
    • 2009-03-03
    • US11222369
    • 2005-09-08
    • Hitoshi MurofushiHidekazu AoyagiShiro TakedaYoshihiko Uchida
    • Hitoshi MurofushiHidekazu AoyagiShiro TakedaYoshihiko Uchida
    • H01L27/15
    • H01L33/405H01L33/44
    • An LED comprises a semiconductor region including an active layer for generating light. An anode is arranged centrally on one of the opposite major surfaces of the semiconductor region from which is emitted the light. A reflective metal layer is bonded to the other major surface of the light-generating semiconductor region via an ohmic contact layer. Sufficiently thin to permit the passage of light therethrough, the ohmic contact layer is formed in an open-worked pattern to leave exposed part of the second major surface of the semiconductor region. A transparent, open-worked anti-alloying layer is interposed between the light-generating semiconductor region and the reflective metal layer, covering that part of the second major surface of the light-generating semiconductor region which is left exposed by the ohmic contact layer. The anti-alloying layer prevents the light-generating semiconductor region and reflective metal layer from alloying during heat treatments conducted in the curse of LED manufacture. A greater percentage of the light from the light-generating semiconductor region is reflected by the reflective metal layer for emission from the first major surface of the light-generating semiconductor region than in the absence of the anti-alloying layer.
    • LED包括包括用于产生光的有源层的半导体区域。 阳极被布置在半导体区域的相对的主表面之一的中心上,从其发射光。 反射金属层经由欧姆接触层与发光半导体区域的另一个主表面接合。 足够薄以允许光通过其中,欧姆接触层以开放图案形成,以留下半导体区域的第二主表面的暴露部分。 在发光半导体区域和反射金属层之间插入透明的开放式抗合金层,覆盖由欧姆接触层露出的发光半导体区域的第二主表面的那部分。 防合金层在LED制造的诅咒中进行的热处理期间防止发光半导体区域和反射金属层的合金化。 来自发光半导体区域的较大百分比的光被来自发光半导体区域的第一主表面的反射金属层反射,而不是不存在抗合金化层。