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1. 发明授权

US06838748B2 Semiconductor element with electromagnetic shielding layer on back/side face(s) thereof 有权
标题翻译：具有背面/侧面上的电磁屏蔽层的半导体元件
公开(公告)号：US06838748B2
公开(公告)日：2005-01-04
申请号：US10434205
申请日：2003-05-09
申请人： Toshiya Ishio , Hiroyuki Nakanishi , Katsunobu Mori , Yoshihide Iwazaki , Shinji Suminoe
发明人： Toshiya Ishio , Hiroyuki Nakanishi , Katsunobu Mori , Yoshihide Iwazaki , Shinji Suminoe
IPC分类号： H01L23/00 , H01L23/31 , H01L23/552 , H01L29/06
CPC分类号： H01L23/552 , H01L23/3114 , H01L24/45 , H01L24/48 , H01L24/97 , H01L29/0657 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/16 , H01L2224/45144 , H01L2224/48227 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/10253 , H01L2924/12042 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor chip of the present invention is so arranged that a front face on which an element circuit is formed has electrode pads and a side face and a back face are coated with a shielding layer for shielding electromagnetic waves. With this, it is possible to provide a semiconductor element capable of being easily manufactured into a smaller semiconductor device compared with a conventional semiconductor device equipped with a shielding cap; a semiconductor device; and a method for manufacturing a semiconductor element.
摘要翻译：本发明的半导体芯片被布置成使得其上形成有元件电路的正面具有电极焊盘，并且侧面和背面涂覆有用于屏蔽电磁波的屏蔽层。由此，与配备有屏蔽盖的现有的半导体装置相比，可以提供能够容易地制造成较小的半导体装置的半导体元件; 半导体器件; 以及半导体元件的制造方法。

2. 发明申请

US20060237848A1 Semiconductor device having a leading wiring layer 有权
标题翻译：具有引线布线层的半导体器件
公开(公告)号：US20060237848A1
公开(公告)日：2006-10-26
申请号：US11474469
申请日：2006-06-26
申请人： Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Yoshihide Iwazaki , Katsunobu Mori
发明人： Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Yoshihide Iwazaki , Katsunobu Mori
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L24/10 , H01L23/3114 , H01L24/05 , H01L24/13 , H01L2224/0231 , H01L2224/0401 , H01L2224/05006 , H01L2224/05546 , H01L2224/05567 , H01L2224/13 , H01L2224/13007 , H01L2224/13022 , H01L2224/13024 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12044 , H01L2224/05552 , H01L2924/00
摘要： A manufacturing method of a semiconductor device, comprising the steps of forming an insulation layer, which has an opening section in an area including an area on an electrode pad, on a top surface of the semiconductor substrate on which the electrode pad is formed; at least forming a first barrier metal layer, which becomes a part of a leading wiring layer, in an inner peripheral surface of the opening section including the top surface of the electrode pad; at least forming a main conductor layer, which becomes a part of the leading wiring layer, in an area surrounded by the first barrier metal layer in the opening section; eliminating an upper portion of the main conductor layer at least to a position at which the first barrier metal layer is exposed, and forming a second barrier metal layer, which becomes a part of the leading wiring layer, so as to cover the whole top surface of the main conductor layer.
摘要翻译：一种半导体器件的制造方法，包括以下步骤：在形成有电极焊盘的半导体衬底的顶表面上形成绝缘层，该绝缘层在包括电极焊盘的区域的区域中具有开口部分; 至少在包括所述电极焊盘的顶面的所述开口部的内周面中形成成为前导布线层的一部分的第一阻挡金属层; 至少在由开口部分中的第一阻挡金属层包围的区域中形成成为引导布线层的一部分的主导体层; 消除主导体层的上部至少到第一阻挡金属层露出的位置，形成作为引导布线层的一部分的第二阻挡金属层，以覆盖整个顶表面的主导体层。

3. 发明授权

US07445958B2 Semiconductor device having a leading wiring layer 有权
标题翻译：具有引线布线层的半导体器件
公开(公告)号：US07445958B2
公开(公告)日：2008-11-04
申请号：US11474469
申请日：2006-06-26
申请人： Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Yoshihide Iwazaki , Katsunobu Mori
发明人： Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Yoshihide Iwazaki , Katsunobu Mori
IPC分类号： H01L21/44
CPC分类号： H01L24/10 , H01L23/3114 , H01L24/05 , H01L24/13 , H01L2224/0231 , H01L2224/0401 , H01L2224/05006 , H01L2224/05546 , H01L2224/05567 , H01L2224/13 , H01L2224/13007 , H01L2224/13022 , H01L2224/13024 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12044 , H01L2224/05552 , H01L2924/00
摘要： A manufacturing method of a semiconductor device, comprising the steps of forming an insulation layer, which has an opening section in an area including an area on an electrode pad, on a top surface of the semiconductor substrate on which the electrode pad is formed; at least forming a first barrier metal layer, which becomes a part of a leading wiring layer, in an inner peripheral surface of the opening section including the top surface of the electrode pad; at least forming a main conductor layer, which becomes a part of the leading wiring layer, in an area surrounded by the first barrier metal layer in the opening section; eliminating an upper portion of the main conductor layer at least to a position at which the first barrier metal layer is exposed, and forming a second barrier metal layer, which becomes a part of the leading wiring layer, so as to cover the whole top surface of the main conductor layer.
摘要翻译：一种半导体器件的制造方法，包括以下步骤：在形成有电极焊盘的半导体衬底的顶表面上形成绝缘层，该绝缘层在包括电极焊盘的区域的区域中具有开口部分; 至少在包括所述电极焊盘的顶面的所述开口部的内周面中形成成为前导布线层的一部分的第一阻挡金属层; 至少在由开口部分中的第一阻挡金属层包围的区域中形成成为引导布线层的一部分的主导体层; 消除主导体层的上部至少到第一阻挡金属层露出的位置，形成作为引导布线层的一部分的第二阻挡金属层，以覆盖整个顶表面的主导体层。

4. 发明授权

US07091616B2 Semiconductor device having a leading wiring layer 有权
标题翻译：具有引线布线层的半导体器件
公开(公告)号：US07091616B2
公开(公告)日：2006-08-15
申请号：US10163492
申请日：2002-06-07
申请人： Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Yoshihide Iwazaki , Katsunobu Mori
发明人： Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Yoshihide Iwazaki , Katsunobu Mori
IPC分类号： H01L23/48
CPC分类号： H01L24/10 , H01L23/3114 , H01L24/05 , H01L24/13 , H01L2224/0231 , H01L2224/0401 , H01L2224/05006 , H01L2224/05546 , H01L2224/05567 , H01L2224/13 , H01L2224/13007 , H01L2224/13022 , H01L2224/13024 , H01L2224/13099 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12044 , H01L2224/05552 , H01L2924/00
摘要： A leading wiring layer is provided with a main conductor layer, a first barrier metal layer for covering bottom and side surfaces of the main conductor layer, and a second barrier metal layer for covering a top surface of the main conductor layer. This ensures the respective barrier metal layers to cover entire surroundings including the side, bottom and top surfaces of the main conductor layer.
摘要翻译：引导布线层设置有主导体层，用于覆盖主导体层的底部和侧表面的第一阻挡金属层和用于覆盖主导体层的顶表面的第二阻挡金属层。这确保相应的阻挡金属层覆盖包括主导体层的侧面，底部和顶部表面的整个环境。

5. 发明授权

US06831002B2 Manufacturing method of semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US06831002B2
公开(公告)日：2004-12-14
申请号：US10242422
申请日：2002-09-13
申请人： Yoshihide Iwazaki , Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Takamasa Tanaka , Katsunobu Mori
发明人： Yoshihide Iwazaki , Shinji Suminoe , Hiroyuki Nakanishi , Toshiya Ishio , Takamasa Tanaka , Katsunobu Mori
IPC分类号： H01L244763
CPC分类号： H01L21/76882 , H01L21/2885 , H01L21/76898
摘要： A manufacturing method of a semiconductor device for providing wires on a front surface of a semiconductor wafer by providing a plating layer, in which conductive layers provided on the front and back surfaces of the semiconductor wafer are electrically conducted by solder filled in its through-holes, and electrolytic plating is carried out by electrically connecting cathode terminals of an electrolytic plating apparatus and the conductive layer provided on the back surface of the semiconductor wafer which is provided with a mask on the conductive layer provided on its front surface.
摘要翻译：一种半导体器件的制造方法，其通过提供镀层，在半导体晶片的前表面上提供导线，其中设置在半导体晶片的前表面和后表面上的导电层通过填充在其通孔中的焊料电导电并且通过将电解电镀装置的阴极端子与设置在其前表面上的导电层上设置有掩模的半导体晶片的背面上的导电层电连接进行电解电镀。

6. 发明申请

US20050194686A1 Semiconductor device and manufacturing method for the same 审中-公开
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20050194686A1
公开(公告)日：2005-09-08
申请号：US11072238
申请日：2005-03-07
申请人： Yoshihide Iwazaki , Shinji Suminoe , Katsunobu Mori
发明人： Yoshihide Iwazaki , Shinji Suminoe , Katsunobu Mori
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/44 , H01L21/60 , H01L23/12 , H01L23/31 , H01L23/48 , H01L23/485 , H01L23/525 , H05K3/34
CPC分类号： H05K3/3452 , H01L23/3114 , H01L23/525 , H01L24/11 , H01L24/13 , H01L2224/0231 , H01L2224/0401 , H01L2224/05647 , H01L2224/05655 , H01L2224/11 , H01L2224/11334 , H01L2224/1148 , H01L2224/13 , H01L2224/131 , H01L2224/13147 , H01L2224/1357 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H05K2201/2081 , H05K2203/0315 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2924/013
摘要： A semiconductor device according to the present invention comprises an electrode pad electrically conducted to an electric circuit formed on an element-formed surface of a silicon wafer; a wiring pattern re-wired by being electrically conducted to the electrode pad; and an oxide film formed on a surface of the wiring pattern, the oxide film being formed by subjecting the wiring pattern to oxidization. With the provision of oxide film, the semiconductor device prevents a decrease in reliability in terms of electric characteristic or the like, and also achieves reduction in fabrication cost compared to a conventional semiconductor device.
摘要翻译：根据本发明的半导体器件包括电导体，该电极焊盘导电到形成在硅晶片的元件形成表面上的电路; 通过对电极焊盘进行导电而重新布线的布线图案; 以及形成在所述布线图案的表面上的氧化膜，所述氧化膜通过对所述布线图案进行氧化而形成。通过提供氧化膜，半导体器件防止电特性等的可靠性降低，并且与现有的半导体器件相比，也可以实现制造成本的降低。

7. 发明申请

US20050104165A1 Semiconductor element, semiconductor device, and method for manufacturing semiconductor element 审中-公开
标题翻译：半导体元件，半导体器件以及半导体元件的制造方法
公开(公告)号：US20050104165A1
公开(公告)日：2005-05-19
申请号：US11023389
申请日：2004-12-29
申请人： Toshiya Ishio , Hiroyuki Nakanishi , Katsunobu Mori , Yoshihide Iwazaki , Shinji Suminoe
发明人： Toshiya Ishio , Hiroyuki Nakanishi , Katsunobu Mori , Yoshihide Iwazaki , Shinji Suminoe
IPC分类号： H01L23/00 , H01L23/31 , H01L23/552 , H01L29/06 , H01L21/302
CPC分类号： H01L23/552 , H01L23/3114 , H01L24/45 , H01L24/48 , H01L24/97 , H01L29/0657 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/16 , H01L2224/45144 , H01L2224/48227 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/10158 , H01L2924/10253 , H01L2924/12042 , H01L2924/15311 , H01L2924/16152 , H01L2924/181 , H01L2924/3025 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor chip of the present invention is so arranged that a front face on which an element circuit is formed has electrode pads and a side face and a back face are coated with a shielding layer for shielding electromagnetic waves. With this, it is possible to provide a semiconductor element capable of being easily manufactured into a smaller semiconductor device compared with a conventional semiconductor device equipped with a shielding cap; a semiconductor device; and a method for manufacturing a semiconductor element.
摘要翻译：本发明的半导体芯片被布置成使得其上形成有元件电路的正面具有电极焊盘，并且侧面和背面涂覆有用于屏蔽电磁波的屏蔽层。由此，与配备有屏蔽盖的现有的半导体装置相比，可以提供能够容易地制造成较小的半导体装置的半导体元件; 半导体器件; 以及半导体元件的制造方法。

8. 发明授权

US06396157B2 Semiconductor integrated circuit device and manufacturing method thereof 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US06396157B2
公开(公告)日：2002-05-28
申请号：US09752682
申请日：2001-01-03
申请人： Hiroyuki Nakanishi , Katsunobu Mori , Toshiya Ishio , Shinji Suminoe
发明人： Hiroyuki Nakanishi , Katsunobu Mori , Toshiya Ishio , Shinji Suminoe
IPC分类号： H01L2348
CPC分类号： H01L24/11 , H01L24/13 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/05548 , H01L2224/05569 , H01L2224/1147 , H01L2224/13099 , H01L2224/131 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/014 , H01L2924/14
摘要： A semiconductor integrated circuit device in accordance with the present invention is provided with first electrode pads, a first insulation layer and a second insulation layer. The first electrode pad are formed on the circuit formation face side of an IC chip. The first insulation layer is placed on areas other than the upper portions of the first electrode pads. The second insulation layer, which is made from a photosensitive material, is formed on the first insulation layer with an opening section for allowing at least one portion of the first electrode, the wire and at least one portion of the second electrode to be exposed. Here, the wire and the second electrode are formed by filling the opening section of the second insulation layer with particles of a conductive material. Thus, it is possible to provide a semiconductor integrated circuit device to which a fine wire processing technique is applied while maintaining the same functions as conventional devices at low costs, and a manufacturing method for such a device.
摘要翻译：根据本发明的半导体集成电路器件设置有第一电极焊盘，第一绝缘层和第二绝缘层。第一电极焊盘形成在IC芯片的电路形成面侧。第一绝缘层放置在除第一电极焊盘的上部之外的区域上。由感光材料制成的第二绝缘层在第一绝缘层上形成有用于允许第一电极，电线和至少一部分第二电极的至少一部分露出的开口部分。这里，通过用导电材料的颗粒填充第二绝缘层的开口部分来形成电线和第二电极。因此，可以提供一种半导体集成电路器件，在保持与传统器件相同功能的低成本的条件下应用细线加工技术，以及这种器件的制造方法。

9. 发明申请

US20120126711A1 PLANAR LIGHT EMITTING DEVICE 审中-公开
标题翻译：平面发光装置
公开(公告)号：US20120126711A1
公开(公告)日：2012-05-24
申请号：US13383785
申请日：2010-11-24
申请人： Shinji Suminoe , Mitsuru Hineno , Masato Onoue
发明人： Shinji Suminoe , Mitsuru Hineno , Masato Onoue
IPC分类号： H05B37/02
CPC分类号： H01L25/0753 , G02F1/133603 , G02F2001/133613 , H01L2924/0002 , H01L2924/00
摘要： A sensor circuit or a display apparatus from which a highly accurate sensor output can be obtained includes a photodiode, a capacitor that is connected to the photodiode via an accumulation node and accumulates charges according to an electric current in the photodiode; a sensor switching element transistor that causes the accumulation node and an output line to be conductive with respect to each other in response to a readout signal and outputs an output signal according to the potential of the accumulation node to the output line; a variable capacitor that is provided between the accumulation node and an input electrode, and whose capacitance varies when a pressure is applied by a touching operation; and a control switching element transistor to which a control signal for switching conduction and non-conduction between the variable capacitor and the accumulation node is input.
摘要翻译：可以从其获得高精度传感器输出的传感器电路或显示装置包括光电二极管，经由累积节点连接到光电二极管的电容器，并根据光电二极管中的电流累积电荷; 传感器开关元件晶体管，其响应于读出信号使所述累积节点和输出线相对于彼此导电，并且根据所述累积节点的电位将输出信号输出到所述输出线; 设置在所述蓄积节点和输入电极之间的可变电容器，并且当通过触摸操作施加压力时，其电容变化; 以及输入用于切换可变电容器和累积节点之间的导通和非导通的控制信号的控制开关元件晶体管。

10. 发明授权

US07646094B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07646094B2
公开(公告)日：2010-01-12
申请号：US11699077
申请日：2007-01-29
申请人： Shinji Suminoe
发明人： Shinji Suminoe
IPC分类号： H01L23/02
CPC分类号： H01L23/49811 , H01L23/057 , H01L24/48 , H01L24/73 , H01L27/14618 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/00014 , H01L2924/09701 , H01L2924/14 , H01L2924/1461 , H01L2924/15153 , H01L2924/1517 , H01L2924/15311 , H01L2924/16195 , H01L2924/16788 , H01L2924/3025 , H05K3/3442 , H05K2201/0212 , H05K2201/0221 , H05K2201/10727 , Y02P70/613 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device (10) includes: a substrate (1), including an electrode pad (1a); an IC chip (4), mounted on the substrate (1); and an externally connecting terminal (7), formed on the electrode pad (1a) and electrically connected with the IC chip (4), the externally connecting terminal (7) including a resin core (7a) made of an elastic material and including a metal layer (7b) formed outside the resin core (7a), thereby providing a semiconductor device having high packaging reliability.
摘要翻译：半导体器件（10）包括：包括电极焊盘（1a）的衬底（1）; 安装在所述基板（1）上的IC芯片（4）; 以及形成在所述电极焊盘（1a）上并与所述IC芯片（4）电连接的外部连接端子（7），所述外部连接端子（7）包括由弹性材料制成的树脂芯体（7a）金属层（7b）形成在树脂芯（7a）的外侧，从而提供具有高封装可靠性的半导体器件。

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