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    • 2. 发明授权
    • Semiconductor pressure sensor
    • 半导体压力传感器
    • US5207102A
    • 1993-05-04
    • US763217
    • 1991-09-20
    • Yoshiharu TakahashiTetsuya HiroseHideyuki Ichiyama
    • Yoshiharu TakahashiTetsuya HiroseHideyuki Ichiyama
    • G01L9/04G01L9/00H01L23/28H01L29/84
    • G01L19/141G01L19/0084G01L19/147H01L2224/32245H01L2224/48247H01L2224/48465H01L2924/10253H01L2924/1815Y10T29/49103
    • A semiconductor pressure sensor is manufactured by integrally encapsulating a semiconductor pressure, sensor chip, a pedestal, leads, wires and a die pad in an outer package except for the surface of a diaphragm of the semiconductor pressure sensor chip and the reverse side of the die pad. The ratio of the thickness of the pedestal to the thickness of the semiconductor pressure sensor chip is 7.5 or less, while the ratio of the diameter of an opening formed in the outer package at the surface of the diaphragm and the diameter of the diaphragm is 1 or more. The thermal stress generated in the semiconductor pressure sensor chip can freely be reduced to a desired value, and a semiconductor pressure sensor exhibiting a desired accuracy can therefore be obtained. Furthermore, since the semiconductor pressure sensor can be manufactured by an ordinary IC manufacturing process, a semiconductor pressure sensor with reduced cost and having high quality can be produced.
    • 半导体压力传感器是通过将半导体压力传感器芯片,基座,引线,导线和芯片焊盘整体地封装在除了半导体压力传感器芯片的隔膜的表面和模具的反面之外的外部封装中来制造的 垫。 基座的厚度与半导体压力传感器芯片的厚度的比率为7.5以下,而在隔膜的表面形成的外部开口的直径和隔膜的直径的比率为1 或者更多。 在半导体压力传感器芯片中产生的热应力可以自由地降低到期望值,因此可以获得呈现期望精度的半导体压力传感器。 此外,由于可以通过普通的IC制造工艺制造半导体压力传感器,所以可以制造成本低且质量好的半导体压力传感器。
    • 4. 发明授权
    • Relaxation oscillator circuit including two clock generator subcircuits having same configuration operating alternately
    • 松弛振荡器电路包括具有相同配置的两个时钟发生器子电路
    • US08692623B2
    • 2014-04-08
    • US13591340
    • 2012-08-22
    • Seichiro ShigaTetsuya HiroseYuji Osaki
    • Seichiro ShigaTetsuya HiroseYuji Osaki
    • H03K3/0231
    • H03K3/354H03K3/011H03K5/1515
    • A control circuit controls first and second clock generator subcircuits so that one subcircuit of the first and second clock generator subcircuits operates for a comparison voltage generating interval, then another subcircuit operates for a clock generating interval, and so that the first and second clock generator subcircuits alternately repeat processes of the comparison voltage generating interval and the clock generating interval. For the comparison voltage generating interval, each of the first and second clock generator subcircuits is controlled to generate a comparison voltage and output the same voltage to an inverted output terminal of a comparator. For the clock generating interval, each of the first and second clock generator subcircuits compares an output voltage from a current-voltage converter circuit with the comparison voltage.
    • 控制电路控制第一和第二时钟发生器子电路,使得第一和第二时钟发生器子电路的一个子电路用于比较电压产生间隔,然后另一个子电路用于时钟产生间隔,并且使得第一和第二时钟发生器子电路 交替地重复比较电压产生间隔和时钟产生间隔的处理。 对于比较电压产生间隔,控制第一和第二时钟发生器子电路中的每一个以产生比较电压并将相同的电压输出到比较器的反相输出端。 对于时钟产生间隔,第一和第二时钟发生器子电路中的每一个将电流 - 电压转换器电路的输出电压与比较电压进行比较。
    • 7. 发明授权
    • Power supply voltage controlling circuit for use in subthreshold digital CMOS circuit including minute current generator and controlled output voltage generator circuit
    • 用于亚阈值数字CMOS电路的电源电压控制电路,包括微电流发生器和受控输出电压发生器电路
    • US08421435B2
    • 2013-04-16
    • US12713372
    • 2010-02-26
    • Tetsuya HiroseYuji OsakiKei Matsumoto
    • Tetsuya HiroseYuji OsakiKei Matsumoto
    • G05F3/16
    • G05F3/242
    • In a circuit and method for correcting a delay variation of a subthreshold CMOS circuit operating in a subthreshold region, a power supply voltage controlling circuit is provided for supplying a controlled output voltage to a subthreshold digital CMOS circuit as a controlled power supply voltage. The subthreshold digital CMOS circuit includes CMOS circuits each having a pMOSFET and an nMOSFET and operating in a subthreshold region with a predetermined delay time, and further includes a minute current generator circuit generating a predetermined minute current based on a power supply voltage, and a controlled output voltage generator circuit generating a controlled output voltage for correcting a variation in the delay time based on a generated minute current and supplying the controlled output voltage to the subthreshold digital CMOS circuit as a controlled power supply voltage including a change in each threshold voltage of the pMOSFET and the nMOSFET.
    • 在用于校正在亚阈值区域中工作的亚阈值CMOS电路的延迟变化的电路和方法中,提供电源电压控制电路,用于将受控输出电压作为受控电源电压提供给次阈值数字CMOS电路。 亚阈值数字CMOS电路包括各自具有pMOSFET和nMOSFET并且在具有预定延迟时间的亚阈值区域中操作的CMOS电路,并且还包括基于电源电压产生预定微小电流的微小电流发生器电路,以及受控 输出电压发生器电路产生受控的输出电压,用于基于产生的微小电流来校正延迟时间的变化,并将受控输出电压提供给次阈值数字CMOS电路作为受控电源电压,该受控电源电压包括每个阈值电压的变化 pMOSFET和nMOSFET。
    • 8. 发明申请
    • RELAXATION OSCILLATOR CIRCUIT INCLUDING TWO CLOCK GENERATOR SUBCIRCUITS HAVING SAME CONFIGURATION OPERATING ALTERNATELY
    • 松动振荡器电路,包括具有相同配置的两个时钟发生器辅助电路
    • US20130049875A1
    • 2013-02-28
    • US13591340
    • 2012-08-22
    • Seichiro SHIGATetsuya HiroseYuji Osaki
    • Seichiro SHIGATetsuya HiroseYuji Osaki
    • H03K3/02
    • H03K3/354H03K3/011H03K5/1515
    • A control circuit controls first and second clock generator subcircuits so that one subcircuit of the first and second clock generator subcircuits operates for a comparison voltage generating interval, then another subcircuit operates for a clock generating interval, and so that the first and second clock generator subcircuits alternately repeat processes of the comparison voltage generating interval and the clock generating interval. For the comparison voltage generating interval, each of the first and second clock generator subcircuits is controlled to generate a comparison voltage and output the same voltage to an inverted output terminal of a comparator. For the clock generating interval, each of the first and second clock generator subcircuits compares an output voltage from a current-voltage converter circuit with the comparison voltage.
    • 控制电路控制第一和第二时钟发生器子电路,使得第一和第二时钟发生器子电路的一个子电路用于比较电压产生间隔,然后另一个子电路用于时钟产生间隔,并且使得第一和第二时钟发生器子电路 交替重复比较电压产生间隔和时钟产生间隔的处理。 对于比较电压产生间隔,控制第一和第二时钟发生器子电路中的每一个以产生比较电压并将相同的电压输出到比较器的反相输出端。 对于时钟产生间隔,第一和第二时钟发生器子电路中的每一个将电流 - 电压转换器电路的输出电压与比较电压进行比较。