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1. 发明授权

US06721342B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US06721342B2
公开(公告)日：2004-04-13
申请号：US10342984
申请日：2003-01-15
申请人： Yoshifumi Yabuki , Tsuyoshi Tojo
发明人： Yoshifumi Yabuki , Tsuyoshi Tojo
IPC分类号： H01S304
CPC分类号： H01S5/4031 , H01S5/0014 , H01S5/0224 , H01S5/02252 , H01S5/02276 , H01S5/02469 , H01S5/02476 , H01S5/32341
摘要： Disclosed is an array type semiconductor laser device including a plurality of semiconductor laser chips each of which has an active layer for forming a light emitting point, wherein the semiconductor laser chips are arrayed on the same substrate in such a manner as to be spaced from each other at intervals. In this laser device, an array configuration of the semiconductor laser chips is specified such that a gap between arbitrary adjacent two laser chips located inwardly from both outermost laser chips positioned at both the edges of the semiconductor laser device is wider than a gap between each of said outermost laser chips and an LD chip adjacent thereto. This laser device is advantageous in reducing the effect of thermal interference mutually exerted on the laser chips, thereby ensuring a thermal uniformity over the entire laser chips.
摘要翻译：公开了一种阵列型半导体激光器件，其包括多个半导体激光器芯片，每个半导体激光器芯片具有用于形成发光点的有源层，其中半导体激光器芯片以与每个半导体激光器芯片间隔开的方式排列在同一基板上其他的间隔。在该激光装置中，规定了半导体激光芯片的阵列结构，使得位于半导体激光装置的两端的两个最外侧的激光芯片的位于内侧的任意相邻的两个激光芯片之间的间隙宽于所述最外面的激光芯片和与其相邻的LD芯片。该激光装置有利于减少相互施加在激光芯片上的热干扰的影响，从而确保整个激光芯片的热均匀性。

2. 发明授权

US07259398B2 Semiconductor light emitting apparatus and method of fabricating the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US07259398B2
公开(公告)日：2007-08-21
申请号：US10973193
申请日：2004-10-26
申请人： Yoshifumi Yabuki
发明人： Yoshifumi Yabuki
IPC分类号： H01L29/22
CPC分类号： B82Y20/00 , H01L27/15 , H01L33/24 , H01S5/0261 , H01S5/2205 , H01S5/2231 , H01S5/34313 , Y10S438/956
摘要： A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer, and second-conductivity-type second cladding layer on substrate; pair of opposing first recesses forming stripe-patterned ridge configuring major current path, and second recess disposed on outer side of one of first recesses on second cladding layer side, each recesses formed to depth keeping active layer unreached; first-conductivity-type current blocking layer formed over inner surfaces of first and second recesses, and second-conductivity-type contact layer formed on current blocking layer; wherein light emitting portion and thyristor structural portion composed of stack of second-conductivity-type contact layer, first-conductivity-type current blocking layer, second-conductivity-type cladding layer, active layer and first-conductivity-type first cladding layer at second recess are formed; and ON voltage of thyristor is adjustable on selection of depth of second recess.
摘要翻译：提出了一种半导体发光装置，其具有晶闸管，而不增加构成半导体层的数量，具有大的ON电压选择的自由度。它包括在基片上的第一导电型第一包层，有源层和第二导电型第二包覆层; 一对相对的第一凹部，形成构成主电流路径的条纹图案的脊;以及第二凹槽，其设置在第二包层侧的第一凹部中的一个的外侧上，每个凹部形成为不保持活性层的深度保持; 形成在第一凹部和第二凹部的内表面上的第一导电型电流阻挡层和形成在电流阻挡层上的第二导电型接触层; 其中由第二导电型接触层，第一导电型电流阻挡层，第二导电型包层，有源层和第二导电类型的第一包层的叠层构成的发光部分和晶闸管结构部分形成凹槽; 晶闸管的导通电压可选择第二凹槽的深度。

3. 发明授权

US06950451B2 Multi-beam semiconductor laser element 失效
标题翻译：多光束半导体激光元件
公开(公告)号：US06950451B2
公开(公告)日：2005-09-27
申请号：US10480568
申请日：2002-06-14
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/205 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/40 , H01S3/10 , H01S3/082 , H01S3/14 , H01S5/00
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

4. 发明申请

US20080014662A1 Semiconductor light emitting apparatus and method of fabricating the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20080014662A1
公开(公告)日：2008-01-17
申请号：US11879643
申请日：2007-07-18
申请人： Yoshifumi Yabuki
发明人： Yoshifumi Yabuki
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L27/15 , H01L33/24 , H01S5/0261 , H01S5/2205 , H01S5/2231 , H01S5/34313 , Y10S438/956
摘要： A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer, and second-conductivity-type second cladding layer on substrate; pair of opposing first recesses forming stripe-patterned ridge configuring major current path, and second recess disposed on outer side of one of first recesses on second cladding layer side, each recesses formed to depth keeping active layer unreached; first-conductivity-type current blocking layer formed over inner surfaces of first and second recesses, and second-conductivity-type contact layer formed on current blocking layer; wherein light emitting portion and thyristor structural portion composed of stack of second-conductivity-type contact layer, first-conductivity-type current blocking layer, second-conductivity-type cladding layer, active layer and first-conductivity-type first cladding layer at second recess are formed; and ON voltage of thyristor is adjustable on selection of depth of second recess.
摘要翻译：提出了一种半导体发光装置，其具有晶闸管，而不增加构成半导体层的数量，具有大的ON电压选择的自由度。它包括在基片上的第一导电型第一包层，有源层和第二导电型第二包覆层; 一对相对的第一凹部，形成构成主电流路径的条纹图案的脊;以及第二凹槽，其设置在第二包层侧的第一凹部中的一个的外侧上，每个凹部形成为深层保持活性层未被接近; 形成在第一凹部和第二凹部的内表面上的第一导电型电流阻挡层和形成在电流阻挡层上的第二导电型接触层; 其中由第二导电型接触层，第一导电型电流阻挡层，第二导电型包层，有源层和第二导电类型的第一包层的叠层构成的发光部分和晶闸管结构部分形成凹槽; 晶闸管的导通电压可选择第二凹槽的深度。

5. 发明授权

US06995406B2 Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device 失效
标题翻译：多光束半导体激光器，半导体发光器件和半导体器件
公开(公告)号：US06995406B2
公开(公告)日：2006-02-07
申请号：US10486050
申请日：2003-06-06
申请人： Tsuyoshi Tojo , Yoshifumi Yabuki , Shinichi Ansai , Tomonori Hino , Osamu Goto , Tsuyoshi Fujimoto , Osamu Matsumoto , Motonobu Takeya , Yoshio Oofuji
发明人： Tsuyoshi Tojo , Yoshifumi Yabuki , Shinichi Ansai , Tomonori Hino , Osamu Goto , Tsuyoshi Fujimoto , Osamu Matsumoto , Motonobu Takeya , Yoshio Oofuji
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01L2224/18 , H01L2224/24137 , H01L2224/73267 , H01S5/02276 , H01S5/042 , H01S5/0421 , H01S5/0425 , H01S5/34333 , H01S5/4031
摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
摘要翻译：在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

6. 发明授权

US07579200B2 Semiconductor light emitting apparatus and method of fabricating the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US07579200B2
公开(公告)日：2009-08-25
申请号：US11879643
申请日：2007-07-18
申请人： Yoshifumi Yabuki
发明人： Yoshifumi Yabuki
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L27/15 , H01L33/24 , H01S5/0261 , H01S5/2205 , H01S5/2231 , H01S5/34313 , Y10S438/956
摘要： A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer, and second-conductivity-type second cladding layer on substrate; pair of opposing first recesses forming stripe-patterned ridge configuring major current path, and second recess disposed on outer side of one of first recesses on second cladding layer side, each recesses formed to depth keeping active layer unreached; first-conductivity-type current blocking layer formed over inner surfaces of first and second recesses, and second-conductivity-type contact layer formed on current blocking layer; wherein light emitting portion and thyristor structural portion composed of stack of second-conductivity-type contact layer, first-conductivity-type current blocking layer, second-conductivity-type cladding layer, active layer and first-conductivity-type first cladding layer at second recess are formed; and ON voltage of thyristor is adjustable on selection of depth of second recess.
摘要翻译：提出了一种半导体发光装置，其具有晶闸管，而不增加构成半导体层的数量，具有大的ON电压选择的自由度。它包括在基片上的第一导电型第一包层，有源层和第二导电型第二包覆层; 一对相对的第一凹部，形成构成主电流路径的条纹图案的脊;以及第二凹槽，其设置在第二包层侧的第一凹部中的一个的外侧上，每个凹部形成为不保持活性层的深度保持; 形成在第一凹部和第二凹部的内表面上的第一导电型电流阻挡层和形成在电流阻挡层上的第二导电型接触层; 其中由第二导电型接触层，第一导电型电流阻挡层，第二导电型包覆层，有源层和第二导电类型的第一包层的层叠构成的发光部和晶闸管结构部形成凹槽; 晶闸管的导通电压可选择第二凹槽的深度。

7. 发明授权

US07149235B2 Multi-beam semiconductor laser device 失效
标题翻译：多光束半导体激光器件
公开(公告)号：US07149235B2
公开(公告)日：2006-12-12
申请号：US11132981
申请日：2005-05-19
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光之间的距离B 2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

8. 发明申请

US20050218422A1 Multi-beam semiconductor laser device 失效
标题翻译：多光束半导体激光器件
公开(公告)号：US20050218422A1
公开(公告)日：2005-10-06
申请号：US11132981
申请日：2005-05-19
申请人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
发明人： Tsuyoshi Tojo , Tomonori Hino , Osamu Goto , Yoshifumi Yabuki , Shinichi Ansai , Shiro Uchida , Masao Ikeda
IPC分类号： H01L21/205 , H01S5/042 , H01S5/22 , H01S5/323 , H01S5/40 , H01L29/24
CPC分类号： H01S5/4031 , H01S5/0425 , H01S5/32341 , H01S5/4087
摘要： A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A, 42B, 42C and 42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to 42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A, 50B, 50C and 50D) respectively. Two n-type electrodes (52A and 52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1 between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μM while the distance B2 between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.
摘要翻译：提供能够发射具有均匀光输出水平的各激光束并且能够容易对准的多光束半导体激光器装置。该多光束半导体激光器件（40）是具有能够发射具有相同波长的激光束的四个激光条纹（42A，42B，42C和42D）的GaN基多光束半导体激光器件。相应的激光振荡区域（42A至42D）在形成在蓝宝石衬底（44）上的台面结构（46）上设置有p型公共电极（48），并具有活性区域（50A， 50B，50C和50D）。在n型GaN接触层（54）上设置两个n型电极（52A和52B），并且位于与台面结构（46）的两侧的p型公共电极（48）相对的公共电极）。激光条纹（42A）与激光条纹（42D）之间的距离A不大于100μm。激光条纹（42A）和n型电极（52B）之间的距离B 1 <1>不大于150μm，而激光器之间的距离B <2 <2> 条纹（42D）和n型电极（52A）不大于150μm。

9. 发明申请

US20050087734A1 Semiconductor light emitting apparatus and method of fabricating the same 失效
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US20050087734A1
公开(公告)日：2005-04-28
申请号：US10973193
申请日：2004-10-26
申请人： Yoshifumi Yabuki
发明人： Yoshifumi Yabuki
IPC分类号： H01S5/323 , H01L21/00 , H01L27/15 , H01L29/06 , H01S5/026 , H01S5/22 , H01S5/223 , H01S5/343
CPC分类号： B82Y20/00 , H01L27/15 , H01L33/24 , H01S5/0261 , H01S5/2205 , H01S5/2231 , H01S5/34313 , Y10S438/956
摘要： A semiconductor light emitting apparatus is proposed, which has thyristor without increasing number of constituent semiconductor layers, with large degree of freedom of selection of ON voltage. It comprises first-conductivity-type first cladding layer, active layer, and second-conductivity-type second cladding layer on substrate; pair of opposing first recesses forming stripe-patterned ridge configuring major current path, and second recess disposed on outer side of one of first recesses on second cladding layer side, each recesses formed to depth keeping active layer unreached; first-conductivity-type current blocking layer formed over inner surfaces of first and second recesses, and second-conductivity-type contact layer formed on current blocking layer; wherein light emitting portion and thyristor structural portion composed of stack of second-conductivity-type contact layer, first-conductivity-type current blocking layer, second-conductivity-type cladding layer, active layer and first-conductivity-type first cladding layer at second recess are formed; and ON voltage of thyristor is adjustable on selection of depth of second recess.
摘要翻译：提出了一种半导体发光装置，其具有晶闸管，而不增加构成半导体层的数量，具有大的ON电压选择的自由度。它包括在基片上的第一导电型第一包层，有源层和第二导电型第二包覆层; 一对相对的第一凹部，形成构成主电流路径的条纹图案的脊;以及第二凹槽，其设置在第二包层侧的第一凹部中的一个的外侧上，每个凹部形成为深层保持活性层未被接近; 形成在第一凹部和第二凹部的内表面上的第一导电型电流阻挡层和形成在电流阻挡层上的第二导电型接触层; 其中由第二导电型接触层，第一导电型电流阻挡层，第二导电型包层，有源层和第二导电类型的第一包层的叠层构成的发光部分和晶闸管结构部分形成凹槽; 晶闸管的导通电压可选择第二凹槽的深度。

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