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1. 发明申请

US20120097869A1 EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS 有权
标题翻译：极光超光源光源装置
公开(公告)号：US20120097869A1
公开(公告)日：2012-04-26
申请号：US13274991
申请日：2011-10-17
申请人： Yoshifumi Ueno , Georg Soumagne , Shiniji Nagai , Akira Endo , Tatsuya Yanagida
发明人： Yoshifumi Ueno , Georg Soumagne , Shiniji Nagai , Akira Endo , Tatsuya Yanagida
IPC分类号： G01J3/10
CPC分类号： H05G2/003 , H05G2/008
摘要： In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.
摘要翻译：在极紫外光源装置中，通过用激光照射作为熔融Sn的液滴D而产生的等离子体产生极紫外光，并且控制在产生极紫外光时产生的离子的流动方向通过磁场或电场照射光，离子收集筒20被布置成用于收集离子，离子收集筒20的离子碰撞表面Sa和Sb设置有或涂覆有Si，溅射速率相对于离子小于一个原子/离子。

2. 发明授权

US08067756B2 Extreme ultraviolet light source apparatus 有权
标题翻译：极紫外光源设备
公开(公告)号：US08067756B2
公开(公告)日：2011-11-29
申请号：US12646075
申请日：2009-12-23
申请人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
发明人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
IPC分类号： H05G2/00 , G01J3/10
CPC分类号： H05G2/003 , H05G2/008
摘要： In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.
摘要翻译：在极紫外光源装置中，通过用激光照射作为熔融Sn的液滴D而产生的等离子体产生极紫外光，并且控制在产生极紫外光时产生的离子的流动方向通过磁场或电场照射光，离子收集筒20被布置成用于收集离子，离子收集筒20的离子碰撞表面Sa和Sb设置有或涂覆有Si，溅射速率相对于离子小于一个原子/离子。

3. 发明授权

US08513630B2 Extreme ultraviolet light source apparatus 有权
标题翻译：极紫外光源设备
公开(公告)号：US08513630B2
公开(公告)日：2013-08-20
申请号：US13274991
申请日：2011-10-17
申请人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
发明人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
IPC分类号： H05G2/00 , G01J3/10
CPC分类号： H05G2/003 , H05G2/008
摘要： In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.
摘要翻译：在极紫外光源装置中，通过用激光照射作为熔融Sn的液滴D而产生的等离子体产生极紫外光，并且控制在产生极紫外光时产生的离子的流动方向通过磁场或电场照射光，离子收集筒20被布置成用于收集离子，离子收集筒20的离子碰撞表面Sa和Sb设置有或涂覆有Si，溅射速率相对于离子小于一个原子/离子。

4. 发明授权

US08471226B2 Extreme ultraviolet light source device and method for producing extreme ultraviolet light 有权
标题翻译：极紫外光源装置及其制造方法
公开(公告)号：US08471226B2
公开(公告)日：2013-06-25
申请号：US12547896
申请日：2009-08-26
申请人： Hiroshi Komori , Tatsuya Yanagida , Yoshifumi Ueno , Akira Sumitani , Akira Endo , Tsukasa Hori
发明人： Hiroshi Komori , Tatsuya Yanagida , Yoshifumi Ueno , Akira Sumitani , Akira Endo , Tsukasa Hori
IPC分类号： A61N5/06
CPC分类号： G21K5/00 , G03F7/70033 , G03F7/70916 , H05G2/003 , H05G2/005 , H05G2/008
摘要： An EUV (Extreme Ultra Violet) light source device ionizes a target material in an ionizer, and supplies the ionized target material to a point of generating a plasma. This reduces the generation of debris. The ionizer simultaneously irradiates laser beams of plural wavelengths corresponding to the excited level of tin on a target material to ionize the target material. The ionized target material is extracted from the ionizer with a high voltage applied from an ion beam extractor, and accelerated and supplied to a plasma generation chamber. When driver laser beam is irradiated on the ionized target material, a plasma is generated, thereby emitting EUV radiation.
摘要翻译： EUV（Extreme Ultra Violet）光源装置将离子发生器中的目标材料离子化，并将电离靶材材料提供到产生等离子体的点。这减少了碎片的产生。离子发生器同时将与激发的锡水平相对应的多个波长的激光束照射在目标材料上以电离目标材料。电离目标材料从离子束提取器施加的高电压从电离器中提取，并被加速并提供给等离子体产生室。当驱动激光束照射在电离靶材上时，产生等离子体，从而发射EUV辐射。

5. 发明申请

US20110101863A1 EXTREME ULTRAVIOLET LIGHT SOURCE DEVICE AND METHOD FOR PRODUCING EXTREME ULTRAVIOLET LIGHT 有权
标题翻译：极光紫外线光源装置及生产超极紫外线灯的方法
公开(公告)号：US20110101863A1
公开(公告)日：2011-05-05
申请号：US12547896
申请日：2009-08-26
申请人： Hiroshi Komori , Tatsuya Yanagida , Yoshifumi Ueno , Akira Sumitani , Akira Endo , Tsukasa Hori
发明人： Hiroshi Komori , Tatsuya Yanagida , Yoshifumi Ueno , Akira Sumitani , Akira Endo , Tsukasa Hori
IPC分类号： H01J7/00
CPC分类号： G21K5/00 , G03F7/70033 , G03F7/70916 , H05G2/003 , H05G2/005 , H05G2/008
摘要： An EUV (Extreme Ultra Violet) light source device ionizes a target material in an ionizer, and supplies the ionized target material to a point of generating a plasma. This reduces the generation of debris. The ionizer simultaneously irradiates laser beams of plural wavelengths corresponding to the excited level of tin on a target material to ionize the target material. The ionized target material is extracted from the ionizer with a high voltage applied from an ion beam extractor, and accelerated and supplied to a plasma generation chamber. When driver laser beam is irradiated on the ionized target material, a plasma is generated, thereby emitting EUV radiation.
摘要翻译： EUV（Extreme Ultra Violet）光源装置将离子发生器中的目标材料离子化，并将电离靶材材料提供到产生等离子体的点。这减少了碎片的产生。离子发生器同时将与激发的锡水平相对应的多个波长的激光束照射在目标材料上以电离目标材料。电离目标材料从离子束提取器施加的高电压从电离器中提取，并被加速并提供给等离子体产生室。当驱动激光束照射在电离靶材上时，产生等离子体，从而发射EUV辐射。

6. 发明授权

US08853656B2 Extreme ultraviolet light source device 有权
标题翻译：极紫外光源装置
公开(公告)号：US08853656B2
公开(公告)日：2014-10-07
申请号：US12535014
申请日：2009-08-04
申请人： Tatsuya Yanagida , Masaki Nakano , Akira Endo
发明人： Tatsuya Yanagida , Masaki Nakano , Akira Endo
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006 , H05G2/008
摘要： Offset in the ejection direction of target material droplets is corrected in order to stabilize EUV output in an EUV light source device. An extreme ultraviolet light source device includes a droplet generation device 110 that outputs target material droplets 101 towards a predetermined plasma emission point 103; a charging device 130 that charges the target material droplets 101; a trajectory correction device 140 that generates a force field in the trajectory to correct the travel direction of the charged target material droplets 101a so that the charged target material droplets 101a travel towards the plasma emission point 103; and a laser light source 150 that irradiates, at the plasma emission point 103, a laser beam onto the charged target material to generate plasma thereby.
摘要翻译：校正目标材料液滴的排出方向的偏移，以便稳定EUV光源装置中的EUV输出。极紫外光源装置包括：液滴产生装置110，其将目标材料液滴101朝向预定等离子体发射点103输出; 对目标材料液滴101进行充电的充电装置130; 轨迹校正装置140，其在轨迹中产生力场，以校正充电的目标材料液滴101a的行进方向，使得带电目标材料液滴101a朝向等离子体发射点103行进; 以及激光源150，其在等离子体发射点103处将激光束照射到带电目标材料上以产生等离子体。

7. 发明授权

US08558202B2 Extreme ultraviolet light source apparatus 有权
公开(公告)号：US08558202B2
公开(公告)日：2013-10-15
申请号：US13336749
申请日：2011-12-23
申请人： Tatsuya Yanagida , Akira Endo , Hiroshi Komori , Shinji Nagai , Kouji Kakizaki , Tamotsu Abe , Hideo Hoshino
发明人： Tatsuya Yanagida , Akira Endo , Hiroshi Komori , Shinji Nagai , Kouji Kakizaki , Tamotsu Abe , Hideo Hoshino
IPC分类号： A61N5/06 , G01J3/10 , H05G2/00
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70916 , H05G2/005 , H05G2/008
摘要： In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.

8. 发明申请

US20100181503A1 EXTREME ULTRAVIOLET LIGHT SOURCE APPARATUS 有权
标题翻译：极光超光源光源装置
公开(公告)号：US20100181503A1
公开(公告)日：2010-07-22
申请号：US12638571
申请日：2009-12-15
申请人： Tatsuya Yanagida , Akira Endo , Hiroshi Komori , Shinji Nagai , Kouji Kakizaki , Tamotsu Abe , Hideo Hoshino
发明人： Tatsuya Yanagida , Akira Endo , Hiroshi Komori , Shinji Nagai , Kouji Kakizaki , Tamotsu Abe , Hideo Hoshino
IPC分类号： G21K5/02
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70916 , H05G2/005 , H05G2/008
摘要： In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.
摘要翻译：在EUV光源装置中，集光镜受到保护，不会损坏镜面涂层。 EUV光源装置包括：产生极紫外光的室; 目标供应单元，用于将目标材料供应到所述室中; 等离子体产生激光器单元，用于用等离子体产生激光束照射室内的目标材料以产生等离子体; 电离激光单元，用于用电离激光束照射在等离子体产生时产生的中性粒子，以将中性粒子转化为离子; 用于收集从等离子体辐射的极紫外光的收集镜; 以及用于在室内形成磁场或电场以捕获离子的磁场或电场形成单元。

9. 发明授权

US08436328B2 Extreme ultraviolet light source apparatus 有权
标题翻译：极紫外光源设备
公开(公告)号：US08436328B2
公开(公告)日：2013-05-07
申请号：US12638571
申请日：2009-12-15
申请人： Tatsuya Yanagida , Akira Endo , Hiroshi Komori , Shinji Nagai , Kouji Kakizaki , Tamotsu Abe , Hideo Hoshino
发明人： Tatsuya Yanagida , Akira Endo , Hiroshi Komori , Shinji Nagai , Kouji Kakizaki , Tamotsu Abe , Hideo Hoshino
IPC分类号： A61N5/06 , G01J3/10 , H05G2/00
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70916 , H05G2/005 , H05G2/008
摘要： In an EUV light source apparatus, a collector mirror is protected from debris damaging a mirror coating. The EUV light source apparatus includes: a chamber in which extreme ultraviolet light is generated; a target supply unit for supplying a target material into the chamber; a plasma generation laser unit for irradiating the target material within the chamber with a plasma generation laser beam to generate plasma; an ionization laser unit for irradiating neutral particles produced at plasma generation with an ionization laser beam to convert the neutral particles into ions; a collector mirror for collecting the extreme ultraviolet light radiated from the plasma; and a magnetic field or electric field forming unit for forming a magnetic field or an electric field within the chamber so as to trap the ions.
摘要翻译：在EUV光源装置中，集光镜受到保护，不会损坏镜面涂层。 EUV光源装置包括：产生极紫外光的室; 目标供应单元，用于将目标材料供应到所述室中; 等离子体产生激光器单元，用于用等离子体产生激光束照射室内的目标材料以产生等离子体; 电离激光单元，用于用电离激光束照射在等离子体产生时产生的中性粒子，以将中性粒子转化为离子; 用于收集从等离子体辐射的极紫外光的收集镜; 以及用于在室内形成磁场或电场以捕获离子的磁场或电场形成单元。

10. 发明申请

US20100025223A1 Extreme Ultraviolet Light Source Device 有权
标题翻译：极紫外光源装置
公开(公告)号：US20100025223A1
公开(公告)日：2010-02-04
申请号：US12535014
申请日：2009-08-04
申请人： Tatsuya Yanagida , Masaki Nakano , Akira Endo
发明人： Tatsuya Yanagida , Masaki Nakano , Akira Endo
IPC分类号： B01J19/12
CPC分类号： H05G2/003 , H05G2/005 , H05G2/006 , H05G2/008
摘要： Offset in the ejection direction of target material droplets is corrected in order to stabilize EUV output in an EUV light source device. An extreme ultraviolet light source device includes a droplet generation device 110 that outputs target material droplets 101 towards a predetermined plasma emission point 103; a charging device 130 that charges the target material droplets 101; a trajectory correction device 140 that generates a force field in the trajectory to correct the travel direction of the charged target material droplets 101a so that the charged target material droplets 101a travel towards the plasma emission point 103; and a laser light source 150 that irradiates, at the plasma emission point 103, a laser beam onto the charged target material to generate plasma thereby.
摘要翻译：校正目标材料液滴的排出方向的偏移，以便稳定EUV光源装置中的EUV输出。极紫外光源装置包括：液滴产生装置110，其将目标材料液滴101朝向预定等离子体发射点103输出; 对目标材料液滴101进行充电的充电装置130; 轨迹校正装置140，其在轨迹中产生力场，以校正充电的目标材料液滴101a的行进方向，使得带电目标材料液滴101a朝向等离子体发射点103行进; 以及激光源150，其在等离子体发射点103处将激光束照射到带电目标材料上以产生等离子体。

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