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1. 发明授权

US08507885B2 Semiconductor exposure device using extreme ultra violet radiation 有权
标题翻译：半导体曝光装置采用极紫外辐射
公开(公告)号：US08507885B2
公开(公告)日：2013-08-13
申请号：US13494778
申请日：2012-06-12
申请人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
发明人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
IPC分类号： G21K5/04
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70575 , G21K1/062 , G21K2201/061 , G21K2201/064 , G21K2201/067
摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
摘要翻译：曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。从光源装置入射的辐射入射在该反射镜上并被反射或衍射。由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

2. 发明授权

US08227778B2 Semiconductor exposure device using extreme ultra violet radiation 有权
标题翻译：半导体曝光装置采用极紫外辐射
公开(公告)号：US08227778B2
公开(公告)日：2012-07-24
申请号：US12469176
申请日：2009-05-20
申请人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
发明人： Masato Moriya , Osamu Wakabayashi , Georg Soumagne
IPC分类号： G21K5/04
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70575 , G21K1/062 , G21K2201/061 , G21K2201/064 , G21K2201/067
摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
摘要翻译：曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。从光源装置入射的辐射入射在该反射镜上并被反射或衍射。由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射在不同的角度被反射或衍射，因此它们的进展方向是不同的。通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

3. 发明申请

US20110163247A1 EXTREME ULTRA VIOLET LIGHT SOURCE APPARATUS 有权
标题翻译：极光紫外线光源设备
公开(公告)号：US20110163247A1
公开(公告)日：2011-07-07
申请号：US13047131
申请日：2011-03-14
申请人： Georg SOUMAGNE , Yoshifumi Ueno , Hiroshi Komori , Akira Sumitani , Katsunobu Nishihara , Young Gwang Kang , Masanori Nunami
发明人： Georg SOUMAGNE , Yoshifumi Ueno , Hiroshi Komori , Akira Sumitani , Katsunobu Nishihara , Young Gwang Kang , Masanori Nunami
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70858 , G03F7/70916 , H05G2/005 , H05G2/008
摘要： In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The extreme ultra violet light source apparatus includes a chamber in which extreme ultra violet light is generated, a target supply unit for supplying a target material to a predetermined position within the chamber, a driver laser for applying a laser beam to the target material supplied by the target supply unit to generate plasma, a collector mirror for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light, a magnetic field forming unit for forming an asymmetric magnetic field in a generation position of the plasma by using a coil, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the coil extend.
摘要翻译：在激光产生的等离子体型的极紫外光源装置中，将从等离子体发射的离子等带电粒子迅速地排出到室外。极紫外光源装置包括产生极紫外光的室，用于将目标材料供应到室内的预定位置的目标供应单元，用于将激光束施加到由用于产生等离子体的目标供应单元，用于收集从等离子体辐射的极端紫外光以输出极紫外光的集光镜;用于在等离子体的产生位置形成非对称磁场的磁场形成单元，其通过使用线圈和带电粒子收集机构，设置在腔室的两个表面中的至少一个上，线圈产生的磁力线延伸到该表面。

4. 发明授权

US08586953B2 Extreme ultra violet light source device 有权
标题翻译：极紫外光源装置
公开(公告)号：US08586953B2
公开(公告)日：2013-11-19
申请号：US13370074
申请日：2012-02-09
申请人： Hiroshi Komori , Yoshifumi Ueno , Georg Soumagne
发明人： Hiroshi Komori , Yoshifumi Ueno , Georg Soumagne
IPC分类号： G21G4/00
CPC分类号： G21K5/00 , H05G2/003 , H05G2/005 , H05G2/008
摘要： An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material.
摘要翻译：激光产生等离子体的极紫外光源装置，其中可以有效地喷射从等离子体发射的离子等带电粒子。极紫外光源装置包括：提供目标材料的目标喷嘴; 激光振荡器，其将激光束施加到从所述目标喷嘴供给的目标材料以产生等离子体; 收集从等离子体辐射的极紫外光的收集器光学元件; 以及在将激光束施加到目标材料的位置形成非对称磁场的磁场形成单元。

5. 发明授权

US08513630B2 Extreme ultraviolet light source apparatus 有权
标题翻译：极紫外光源设备
公开(公告)号：US08513630B2
公开(公告)日：2013-08-20
申请号：US13274991
申请日：2011-10-17
申请人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
发明人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
IPC分类号： H05G2/00 , G01J3/10
CPC分类号： H05G2/003 , H05G2/008
摘要： In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.
摘要翻译：在极紫外光源装置中，通过用激光照射作为熔融Sn的液滴D而产生的等离子体产生极紫外光，并且控制在产生极紫外光时产生的离子的流动方向通过磁场或电场照射光，离子收集筒20被布置成用于收集离子，离子收集筒20的离子碰撞表面Sa和Sb设置有或涂覆有Si，溅射速率相对于离子小于一个原子/离子。

6. 发明申请

US20100176312A1 EXTREME ULTRA VIOLET LIGHT SOURCE APPARATUS 审中-公开
标题翻译：极光紫外线光源设备
公开(公告)号：US20100176312A1
公开(公告)日：2010-07-15
申请号：US12352694
申请日：2009-01-13
申请人： Hiroshi Komori , Yoshifumi Ueno , Georg Soumagne
发明人： Hiroshi Komori , Yoshifumi Ueno , Georg Soumagne
IPC分类号： G01J3/10
CPC分类号： G03F7/70916 , G03F7/70033 , H05G2/003 , H05G2/008
摘要： In a laser produced plasma type extreme ultra violet light source apparatus, charged particles such as ions emitted from plasma can be efficiently ejected by the action of a magnetic field and secondary production of contaminants can be suppressed. The extreme ultra violet light source apparatus includes: a target nozzle for supplying a target material; a laser oscillator for applying a laser beam to the target material supplied by the target nozzle to generate plasma; an EUV collector mirror for collecting extreme ultra violet light radiated from the plasma; and an electromagnet for forming a magnetic field in a position where the laser beam is applied to the target material, wherein an aperture of the electromagnet is formed according to a shape of lines of magnetic flux of the magnetic field.
摘要翻译：在激光产生的等离子体型极紫外光源装置中，可以通过磁场的作用有效地喷射从等离子体发射的离子等带电粒子，能够抑制二次生成污染物。极紫外光源装置包括：用于供给目标材料的目标喷嘴; 激光振荡器，用于将激光束施加到由目标喷嘴供应的目标材料以产生等离子体; 用于收集从等离子体辐射的极紫外光的EUV收集镜; 以及用于在将激光束施加到目标材料的位置形成磁场的电磁体，其中根据磁场的磁通线的形状形成电磁体的孔。

7. 发明申请

US20090267003A1 SEMICONDUCTOR EXPOSURE DEVICE USING EXTREME ULTRA VIOLET RADIATION 有权
标题翻译：使用超强紫外线辐射的半导体曝光装置
公开(公告)号：US20090267003A1
公开(公告)日：2009-10-29
申请号：US12469176
申请日：2009-05-20
申请人： Masato MORIYA , Osamu WAKABAYASHI , Georg SOUMAGNE
发明人： Masato MORIYA , Osamu WAKABAYASHI , Georg SOUMAGNE
IPC分类号： G21K5/00
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70575 , G21K1/062 , G21K2201/061 , G21K2201/064 , G21K2201/067
摘要： The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.
摘要翻译：曝光装置只能将EUV辐射提供给掩模，同时消除EUV辐射以外的辐射。在反射镜的前表面上设置由多个Mo / Si对层制成的多层，并且在该多层中形成闪耀的凹槽。从光源装置入射的辐射入射在该反射镜上并被反射或衍射。由于反射的EUV辐射（包括衍射的EUV辐射）和其他波长的辐射以不同的角度被反射或衍射，因此它们的进展方向是不同的。通过用孔和/或自卸车消除其它波长的辐射，可以仅用高纯度的EUV辐射照射掩模。

8. 发明授权

US07006309B2 Prism unit and laser device 失效
标题翻译：棱镜单元和激光设备
公开(公告)号：US07006309B2
公开(公告)日：2006-02-28
申请号：US10280031
申请日：2002-10-25
申请人： Osamu Wakabayashi , Georg Soumagne , Takahito Kumazaki
发明人： Osamu Wakabayashi , Georg Soumagne , Takahito Kumazaki
IPC分类号： G02B5/04
CPC分类号： G02B5/04 , H01S3/08004 , H01S3/105
摘要： A prism unit, which is capable of firmly fixing a plurality of prism parts in a small space, and a laser device, which is capable of enhancing output power of laser light with use of the prism unit, are provided. For this purpose, a prism unit (28) includes a plurality of prism parts (35), which refract incident light (21), and a fixed part (36) which is fixed to or formed integrally with at least two of the plurality of prism parts. Further, a laser device includes the prism unit (28), and only a wavelength in a desired range out of a plurality of oscillation wavelengths is selectively oscillated by the prism unit.
摘要翻译：提供了能够在小空间中牢固地固定多个棱镜部分的棱镜单元和能够使用棱镜单元增强激光输出功率的激光装置。为此，棱镜单元（28）包括折射入射光（21）的多个棱镜部（35）和固定部（36），固定部（36）与多个棱镜零件。此外，激光装置包括棱镜单元（28），并且仅通过棱镜单元选择性地振荡多个振荡波长内的期望范围的波长。

9. 发明授权

US08143606B2 Extreme ultra violet light source device 有权
标题翻译：极紫外光源装置
公开(公告)号：US08143606B2
公开(公告)日：2012-03-27
申请号：US11730139
申请日：2007-03-29
申请人： Hiroshi Komori , Yoshifumi Ueno , Georg Soumagne
发明人： Hiroshi Komori , Yoshifumi Ueno , Georg Soumagne
IPC分类号： H05G2/00
CPC分类号： G21K5/00 , H05G2/003 , H05G2/005 , H05G2/008
摘要： An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material.
摘要翻译：激光产生等离子体的极紫外光源装置，其中可以有效地喷射从等离子体发射的离子等带电粒子。极紫外光源装置包括：提供目标材料的目标喷嘴; 激光振荡器，其将激光束施加到从所述目标喷嘴供给的目标材料以产生等离子体; 收集从等离子体辐射的极紫外光的收集器光学元件; 以及在将激光束施加到目标材料的位置形成非对称磁场的磁场形成单元。

10. 发明授权

US08067756B2 Extreme ultraviolet light source apparatus 有权
标题翻译：极紫外光源设备
公开(公告)号：US08067756B2
公开(公告)日：2011-11-29
申请号：US12646075
申请日：2009-12-23
申请人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
发明人： Yoshifumi Ueno , Georg Soumagne , Shinji Nagai , Akira Endo , Tatsuya Yanagida
IPC分类号： H05G2/00 , G01J3/10
CPC分类号： H05G2/003 , H05G2/008
摘要： In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinder 20 is arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinder 20 are provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.
摘要翻译：在极紫外光源装置中，通过用激光照射作为熔融Sn的液滴D而产生的等离子体产生极紫外光，并且控制在产生极紫外光时产生的离子的流动方向通过磁场或电场照射光，离子收集筒20被布置成用于收集离子，离子收集筒20的离子碰撞表面Sa和Sb设置有或涂覆有Si，溅射速率相对于离子小于一个原子/离子。

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