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    • 8. 发明授权
    • Sputtering apparatus and manufacturing method of semiconductor light-emitting element
    • 半导体发光元件的溅射装置及其制造方法
    • US08882971B2
    • 2014-11-11
    • US12987828
    • 2011-01-10
    • Hisayuki MikiKenzo HanawaYasunori YokoyamaYasumasa Sasaki
    • Hisayuki MikiKenzo HanawaYasunori YokoyamaYasumasa Sasaki
    • C23C14/06C23C14/34H01L33/00C23C14/54
    • C23C14/34C23C14/0647C23C14/541H01L33/007
    • A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
    • 溅射装置(1)包括:具有保持在减压状态的内部以产生等离子体放电(20)的室(10); 放置在所述室(10)中并保持靶(21)的阴极(22); 以及保持基板(110)的基板保持器(60),使得基板(110)的一个表面面向目标(21)的表面。 基板(110)布置在溅射装置(1)的上部,基板(110)的表面朝下。 目标(21)被布置在溅射装置(1)的下部,靶(21)的表面朝上。 溅射装置(1)包括用于加热基板(110)的加热器(65)。 通过吸收从加热器(65)辐射的电磁波来升高基板(110)的温度。 还公开了使用溅射装置制造半导体发光元件的方法。