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1. 发明申请

US20080223434A1 SOLAR CELL AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20080223434A1
公开(公告)日：2008-09-18
申请号：US12033603
申请日：2008-02-19
申请人： Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
发明人： Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
IPC分类号： H01L31/06 , H01L31/0264 , H01L31/18
CPC分类号： H01L51/0008 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L31/022425 , H01L31/0687 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a solar cell that is useful for industry and has high photoelectric conversion efficiency and a method of manufacturing the same. A solar cell according to an aspect of the invention includes: a substrate; a buffer layer that is formed on the substrate and is composed of a group-III nitride semiconductor; and a group-III nitride semiconductor layer (p-type layer/an n-type layer) that has a p-n junction therein and is formed on the buffer layer. At least one of the buffer layer and the group-III nitride semiconductor layer having the p-n junction therein has a compound semiconductor layer formed by a sputtering method.
摘要翻译：本发明提供了一种对工业有用并具有高光电转换效率的太阳能电池及其制造方法。根据本发明的一个方面的太阳能电池包括：基板; 形成在基板上并由III族氮化物半导体构成的缓冲层; 以及在缓冲层上形成有p-n结的III族氮化物半导体层（p型层/ n型层）。具有p-n结的缓冲层和III-III族氮化物半导体层中的至少一个具有通过溅射法形成的化合物半导体层。

2. 发明授权

US08802187B2 Solar cell and process for producing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08802187B2
公开(公告)日：2014-08-12
申请号：US12820892
申请日：2010-06-22
申请人： Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
发明人： Yoshiaki Ikenoue , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
IPC分类号： H01L21/203 , H01L51/00
CPC分类号： H01L51/0008 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L31/022425 , H01L31/0687 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
摘要翻译：本发明提供一种太阳能电池的制造方法，其特征在于，使用溅射法在基板上形成由III族氮化物半导体构成的缓冲层，在所述缓冲层上形成III族氮化物半导体层和电极。 III族氮化物半导体层通过选自溅射法，MOCVD法，MBE法，CBE法和MLE法中的至少一种形成在缓冲层上，电极形成在 III族氮化物半导体层。

3. 发明申请

US20100261308A1 SOLAR CELL AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100261308A1
公开(公告)日：2010-10-14
申请号：US12820892
申请日：2010-06-22
申请人： Yoshiaki IKENOUE , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
发明人： Yoshiaki IKENOUE , Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki , Hitoshi Yokouchi , Ryoko Konta , Hiroaki Kaji
IPC分类号： H01L31/18
CPC分类号： H01L51/0008 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L31/022425 , H01L31/0687 , H01L31/0693 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.
摘要翻译：本发明提供一种太阳能电池的制造方法，其特征在于，使用溅射法在基板上形成由III族氮化物半导体构成的缓冲层，在所述缓冲层上形成III族氮化物半导体层和电极。 III族氮化物半导体层通过选自溅射法，MOCVD法，MBE法，CBE法和MLE法中的至少一种形成在缓冲层上，电极形成在 III族氮化物半导体层。

4. 发明申请

US20090146161A1 GROUP III NITRIDE COMPOUND SEMICONDUCTOR STACKED STRUCTURE 有权
标题翻译： III类氮化物半导体堆叠结构
公开(公告)号：US20090146161A1
公开(公告)日：2009-06-11
申请号：US12300306
申请日：2007-05-08
申请人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
发明人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
IPC分类号： H01L29/205 , H01L21/20 , H01L33/00
CPC分类号： C23C16/303 , C23C16/0272 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.
摘要翻译：本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

5. 发明授权

US08148712B2 Group III nitride compound semiconductor stacked structure 有权
标题翻译： III族氮化物化合物半导体层叠结构
公开(公告)号：US08148712B2
公开(公告)日：2012-04-03
申请号：US12300306
申请日：2007-05-08
申请人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
发明人： Hisayuki Miki , Hiromitsu Sakai , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki , Hiroaki Kaji
IPC分类号： H01L29/06
CPC分类号： C23C16/303 , C23C16/0272 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02595 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/16 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.
摘要翻译：本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

6. 发明申请

US20090087936A1 DEPOSITION METHOD OF III GROUP NITRIDE COMPOUND SEMICONDUCTOR LAMINATED STRUCTURE 有权
标题翻译： III组氮化合物半导体层叠结构的沉积方法
公开(公告)号：US20090087936A1
公开(公告)日：2009-04-02
申请号：US12299082
申请日：2007-09-13
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： H01L21/20 , C23C14/34
CPC分类号： C30B29/403 , C23C16/303 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a deposition method of a multilayered structure composed of a III group nitride compound semiconductor having good crystallinity on a substrate. The multilayered structure comprises at least a buffer layer and an underlying layer from the substrate side, and the buffer layer and the underlying layer are formed by a sputtering method. A deposition temperature of the buffer layer is adjusted to a temperature lower than a deposition temperature of the underlying layer, or the thickness of the buffer layer is adjusted to 5 nm to 500 nm. Furthermore, the multilayered structure comprises at least an underlying layer and a light-emissive layer from the substrate side and the underlying layer is formed by a sputtering method, and the method comprises the step of forming the light-emissive layer by a metal-organic chemical vapor deposition (MOCVD method).
摘要翻译：本发明提供了由在基板上具有良好结晶度的III族氮化物化合物半导体构成的多层结构的沉积方法。多层结构至少包括缓冲层和从衬底侧的下层，并且通过溅射法形成缓冲层和下层。将缓冲层的沉积温度调节到低于下层的沉积温度的温度，或将缓冲层的厚度调节至5nm至500nm。此外，多层结构至少包括从衬底侧的下层和发光层，并且通过溅射法形成下层，并且该方法包括通过金属有机物形成发光层的步骤化学气相沉积（MOCVD法）。

7. 发明申请

US20090315046A1 GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP 有权
标题翻译： III族氮化物半导体发光器件，制造III族氮化物半导体发光器件的方法和灯
公开(公告)号：US20090315046A1
公开(公告)日：2009-12-24
申请号：US12373655
申请日：2007-08-15
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , C23C14/0036 , C23C14/0641 , H01L21/0237 , H01L21/02381 , H01L21/02403 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.
摘要翻译：本发明提供了具有高生产率和良好发射特性的III族氮化物化合物半导体发光器件，制造III族氮化物半导体发光器件和灯的方法。一种III族氮化物半导体发光元件的制造方法，其特征在于，在基板11上，使用溅射法，将包含Ga作为III族元素的III族氮化物半导体化合物半导体层形成为半导体层。基板11和溅射靶被配置成彼此面对，并且基板11和溅射靶之间的间隙在20〜100mm的范围内。此外，当通过溅射法形成半导体层时，对基板11施加大于0.1W / cm 2的偏压。此外，当形成半导体层时，将氮和氩供应到用于溅射的室中。

8. 发明授权

US08882971B2 Sputtering apparatus and manufacturing method of semiconductor light-emitting element 有权
标题翻译：半导体发光元件的溅射装置及其制造方法
公开(公告)号：US08882971B2
公开(公告)日：2014-11-11
申请号：US12987828
申请日：2011-01-10
申请人： Hisayuki Miki , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasunori Yokoyama , Yasumasa Sasaki
IPC分类号： C23C14/06 , C23C14/34 , H01L33/00 , C23C14/54
CPC分类号： C23C14/34 , C23C14/0647 , C23C14/541 , H01L33/007
摘要： A sputtering apparatus (1) includes: a chamber (10) having an inside maintained in a depressurized state to generate plasma discharge (20); a cathode (22) placed in the chamber (10) and holding a target (21); and a substrate holder (60) holding a substrate (110) so that one surface of the substrate (110) faces the surface of the target (21). The substrate (110) is arranged at an upper portion in the sputtering apparatus (1) with the surface of the substrate (110) facing downward. The target (21) is arranged at a lower portion in the sputtering apparatus (1) with the surface of the target (21) facing upward. The sputtering apparatus (1) includes a heater (65) for heating the substrate (110). The temperature of the substrate (110) is raised by absorbing electromagnetic waves radiated from the heater (65). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.
摘要翻译：溅射装置（1）包括：具有保持在减压状态的内部以产生等离子体放电（20）的室（10）; 放置在所述室（10）中并保持靶（21）的阴极（22）; 以及保持基板（110）的基板保持器（60），使得基板（110）的一个表面面向目标（21）的表面。基板（110）布置在溅射装置（1）的上部，基板（110）的表面朝下。目标（21）被布置在溅射装置（1）的下部，靶（21）的表面朝上。溅射装置（1）包括用于加热基板（110）的加热器（65）。通过吸收从加热器（65）辐射的电磁波来升高基板（110）的温度。还公开了使用溅射装置制造半导体发光元件的方法。

9. 发明授权

US08557092B2 Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus 有权
标题翻译：用于溅射沉积设备的溅射沉积设备和背板
公开(公告)号：US08557092B2
公开(公告)日：2013-10-15
申请号：US12374974
申请日：2007-10-19
申请人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
发明人： Hisayuki Miki , Kenzo Hanawa , Yasumasa Sasaki
IPC分类号： C23C14/56 , C23C14/06 , C23C14/34
CPC分类号： C23C14/3407 , C23C14/0617
摘要： A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90°.
摘要翻译：提供了能够稳定地保持Ga的溅射沉积设备中使用的背板和设置有背板的溅射沉积设备。这种用于溅射沉积设备的背板是用于保持含有Ga的靶材料的背板，并且至少其与目标材料接触的接触表面由易接触的材料构成，该材料具有接触角以Ga为液态不超过90°。

10. 发明授权

US08097482B2 Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp 有权
标题翻译： III族氮化物半导体的制造方法，III族氮化物半导体发光元件的制造方法，III族氮化物半导体发光元件及灯
公开(公告)号：US08097482B2
公开(公告)日：2012-01-17
申请号：US12438047
申请日：2008-06-03
申请人： Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
发明人： Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L21/02631 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/1305 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.
摘要翻译：一种本发明的III族氮化物半导体的制造方法，其特征在于，包括：溅射工序，用于将基板和靶设置在室内，并通过反应溅射法在所述基板上形成掺杂了Mg的III族氮化物半导体，步骤包括各自的子步骤：用于在掺杂Mg时形成半导体薄膜的成膜步骤; 以及等离子体处理步骤，用于对在成膜步骤中形成的半导体薄膜施加惰性气体等离子体处理，并且通过层合半导体薄膜而形成第III族氮化物半导体，该方法是通过交替重复成膜步骤和等离子体处理步骤。

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