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1. 发明申请

US20090140358A1 MAGNETORESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20090140358A1
公开(公告)日：2009-06-04
申请号：US12364132
申请日：2009-02-02
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

2. 发明授权

US07518907B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US07518907B2
公开(公告)日：2009-04-14
申请号：US12019743
申请日：2008-01-25
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

3. 发明授权

US08009465B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US08009465B2
公开(公告)日：2011-08-30
申请号：US12364132
申请日：2009-02-02
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案;以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间的非磁性层，并且具有隧道电导变化依赖在第一磁化和第二磁化之间的相对角度上。

4. 发明授权

US07355884B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US07355884B2
公开(公告)日：2008-04-08
申请号：US11245353
申请日：2005-10-07
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.
摘要翻译：磁阻元件包括具有第一磁化的第一铁磁层，当在第一数据写入期间磁阻元件被半选择时，第一磁化具有第一图案，当在第二数据写入期间选择磁阻元件时的第二图案，以及剩余磁化的第三图案，第一图案不同于第二和第三图案，具有第二磁化的第二铁磁层，以及布置在第一铁磁层和第二铁磁层之间并且具有隧道电导变化依赖性的非磁性层在第一磁化和第二磁化之间的相对角度上。

5. 发明申请

US20060083057A1 Magnetoresistive element 有权
公开(公告)号：US20060083057A1
公开(公告)日：2006-04-20
申请号：US11245353
申请日：2005-10-07
申请人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
发明人： Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Yoshiaki Fukuzumi , Toshihiko Nagase , Sumio Ikegawa , Hiroaki Yoda
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1121
摘要： A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

6. 发明授权

US08378437B2 Magnetoresistive effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08378437B2
公开(公告)日：2013-02-19
申请号：US12248484
申请日：2008-10-09
申请人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
发明人： Masahiko Nakayama , Kay Yakushiji , Sumio Ikegawa , Shinji Yuasa , Tadashi Kai , Toshihiko Nagase , Minoru Amano , Hisanori Aikawa , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , B82Y25/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01F10/123 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01L43/08
摘要： A magnetoresistive effect element includes a reference layer, a recording layer, and a nonmagnetic layer. The reference layer is made of a magnetic material, has an invariable magnetization which is perpendicular to a film surface. The recording layer is made of a magnetic material, has a variable magnetization which is perpendicular to the film surface. The nonmagnetic layer is arranged between the reference layer and the recording layer. A critical diameter which is determined by magnetic anisotropy, saturation magnetization, and switched connection of the recording layer and has a single-domain state as a unique stable state or a critical diameter which has a single-domain state as a unique stable state and is inverted while keeping the single-domain state in an inverting process is larger than an element diameter of the magnetoresistive effect element.
摘要翻译：磁阻效应元件包括参考层，记录层和非磁性层。参考层由磁性材料制成，具有垂直于膜表面的不变磁化。记录层由磁性材料制成，具有垂直于膜表面的可变磁化强度。非磁性层布置在参考层和记录层之间。临界直径由磁各向异性，饱和磁化强度和记录层的开关连接确定，并且具有作为独特稳定状态的单畴状态或具有单域状态作为唯一稳定状态的临界直径，并且是在反转过程中保持单畴状态的反转大于磁阻效应元件的元件直径。

7. 发明授权

US07875903B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07875903B2
公开(公告)日：2011-01-25
申请号：US12037726
申请日：2008-02-26
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

8. 发明申请

US20070012972A1 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US20070012972A1
公开(公告)日：2007-01-18
申请号：US11389110
申请日：2006-03-27
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： H01L29/94
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

9. 发明授权

US07411263B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07411263B2
公开(公告)日：2008-08-12
申请号：US11389110
申请日：2006-03-27
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Yoshiaki Fukuzumi , Tatsuya Kishi
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/16 , H01L27/222 , H01L27/224 , H01L27/228
摘要： A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
摘要翻译：磁存储器件包括磁阻元件和第一布线层。磁阻元件包括固定层，记录层和介于其间的非磁性层。第一布线层沿第一方向延伸并产生用于在磁阻元件中记录数据的磁场。记录层包括从第一方向旋转了大于0°至不大于20°的角度的第二方向延伸的基部，以及从第一和第二侧的第一和第二侧突出的第一和第二突出部在与第二方向垂直的第三方向上的基部。基部的第三和第四侧相对于第三方向在与第二方向旋转的旋转方向相同的旋转方向上倾斜。

10. 发明申请

US20060198184A1 Magnetic memory device and write method of magnetic memory device 有权
标题翻译：磁存储器件和磁存储器件的写入方法
公开(公告)号：US20060198184A1
公开(公告)日：2006-09-07
申请号：US11255111
申请日：2005-10-21
申请人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
发明人： Hiroaki Yoda , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Tatsuya Kishi
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2≦C≦0.2 erg/cm2.
摘要翻译：一种磁存储器件包括沿第一方向延伸的第一写入布线，沿与第一方向不同的第二方向延伸的第二写入布线和布置在第一和第二写入布线之间的交叉点处的磁阻元件，具有夹在固定层和记录层之间的固定层，记录层和磁阻层，并且具有相对于第一和第二方向倾斜的易磁化轴，记录层包括第一铁磁层，第一铁磁层和夹在第一和第二铁磁层之间的第一非磁性层，其中第一铁磁层的第一磁化和第二铁磁层的第二磁化被铁磁耦合，并且铁磁耦合的铁磁耦合常数C 为0.0001 erg / cm 2 <= C <= 0.2 ERG / CM 2。

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