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2. 发明授权

US09665003B2 Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns 有权
公开(公告)号：US09665003B2
公开(公告)日：2017-05-30
申请号：US14263323
申请日：2014-04-28
申请人： Yoo-Jeong Choi , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Hyun-Ji Song , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Seung-Hee Hong
发明人： Yoo-Jeong Choi , Yun-Jun Kim , Go-Un Kim , Young-Min Kim , Hea-Jung Kim , Joon-Young Moon , Yo-Choul Park , Yu-Shin Park , You-Jung Park , Hyun-Ji Song , Seung-Wook Shin , Yong-Woon Yoon , Chung-Heon Lee , Seung-Hee Hong
IPC分类号： G03F7/09 , G03F7/40 , G03F7/11 , G03F7/30 , G03F7/16 , G03F7/36
CPC分类号： G03F7/094 , G03F7/09 , G03F7/091 , G03F7/11 , G03F7/162 , G03F7/30 , G03F7/36 , G03F7/40
摘要： A hardmask composition includes a monomer represented by the following Chemical Formula 1, a polymer including a moiety represented by the following Chemical Formula 2, a polymer including a moiety represented by the following Chemical Formula 3, or a combination thereof, and a solvent,

3. 发明授权

US09240443B2 Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent 有权
标题翻译：间隙填充剂的制备方法，使用该间隙填充剂的间隙填充剂，以及使用间隙填充剂制造半导体电容器的方法
公开(公告)号：US09240443B2
公开(公告)日：2016-01-19
申请号：US14144738
申请日：2013-12-31
申请人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
发明人： Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
IPC分类号： C08G77/00 , H01L49/02 , H01L21/02
CPC分类号： H01L28/92 , C08G77/00 , C08G77/62 , C09D183/16 , H01L21/02222 , H01L21/02282 , H01L21/02326
摘要： A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
摘要翻译：制备间隙填充剂的方法包括向碱性溶剂中加入卤代硅烷，并且向碱性溶剂和卤代硅烷中添加约50至约70重量份的氨，基于100重量份的卤代硅烷以约1g / hr至约15g / hr的速率。

4. 发明授权

US09574108B2 Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer 有权
标题翻译：用于形成二氧化硅基绝缘层的组合物，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法
公开(公告)号：US09574108B2
公开(公告)日：2017-02-21
申请号：US14259845
申请日：2014-04-23
申请人： Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
发明人： Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
IPC分类号： C08L83/05 , B05D1/00 , C09D183/04 , C08L83/02 , H01L21/02
CPC分类号： C09D183/04 , C08L83/02 , H01L21/02126 , H01L21/02216 , H01L21/02282
摘要： A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1:
摘要翻译：用于形成二氧化硅基绝缘层的组合物，二氧化硅系绝缘层，以及二氧化硅系绝缘层的制造方法，所述组合物含有溶剂; 和含有下述化学式1表示的结构单元的有机硅烷缩聚产物：

5. 发明授权

US09362030B2 Composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer 有权
标题翻译：用于形成二氧化硅基绝缘层的组合物，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法
公开(公告)号：US09362030B2
公开(公告)日：2016-06-07
申请号：US14268193
申请日：2014-05-02
申请人： Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
发明人： Eun-Su Park , Taek-Soo Kwak , Yoong-Hee Na , Hyun-Ji Song , Han-Song Lee , Seung-Hee Hong
IPC分类号： H01B3/00 , H01B3/46 , H01B17/00 , H01B17/60 , C08G77/44 , H01B19/02 , H01B3/18 , H01B19/04 , C08G77/54 , C09D183/14
CPC分类号： H01B19/02 , C08G77/54 , C09D183/14 , H01B3/18 , H01B3/46 , H01B19/04
摘要： A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product, the organosilane-based condensation polymerization product being prepared from a compound mixture, the compound mixture including compounds represented by the following Chemical Formulae 1 and 2: (R1)3SiXSi(R1)3 [Chemical Formula 1] R2e(Si)OR34-e. [Chemical Formula 2]
摘要翻译：用于形成二氧化硅基绝缘层的组合物，二氧化硅系绝缘层，以及二氧化硅系绝缘层的制造方法，所述组合物含有溶剂; 和由有机硅烷类缩聚产物，由化合物混合物制备的有机硅烷缩合产物，该化合物混合物包括由以下化学式1和2表示的化合物：（R1）3SiXSi（R1）3 [化学式1 ] R2e（Si）OR34-e。 [化学式2]

6. 发明授权

US08841218B2 Resist underlayer composition and process of producing integrated circuit devices using same 有权
标题翻译：抗蚀底层组成和使用其制造集成电路器件的工艺
公开(公告)号：US08841218B2
公开(公告)日：2014-09-23
申请号：US13571751
申请日：2012-08-10
申请人： Kwen-Woo Han , Mi-Young Kim , Woo-Jin Lee , Han-Song Lee , Seung-Hee Hong , Sang-Kyun Kim , Jin-Wook Lee
发明人： Kwen-Woo Han , Mi-Young Kim , Woo-Jin Lee , Han-Song Lee , Seung-Hee Hong , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： H01L21/311 , C08L83/06
CPC分类号： C08L83/06 , G03F7/0752 , G03F7/091 , G03F7/094
摘要： A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.
摘要翻译：包含溶剂的抗蚀剂底层组合物和由化学式1表示的化合物，由化学式2表示的化合物和由化学式3表示的化合物制备的水解产物的有机硅烷缩聚产物。

7. 发明授权

US08314021B2 Method for fabricating semiconductor device with buried gates 失效
标题翻译：制造具有埋栅的半导体器件的方法
公开(公告)号：US08314021B2
公开(公告)日：2012-11-20
申请号：US12938806
申请日：2010-11-03
申请人： Jik-Ho Cho , Seung-Jin Yeom , Seung-Hee Hong , Nam-Yeal Lee
发明人： Jik-Ho Cho , Seung-Jin Yeom , Seung-Hee Hong , Nam-Yeal Lee
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28088 , C23C16/045 , C23C16/34 , C23C16/45525 , C23C16/56 , H01L29/4236 , H01L29/4966 , H01L29/66621
摘要： A method for fabricating a semiconductor device includes: forming a thin film over trenches by using a first source gas and a first reaction gas; performing a first post-treatment on the thin film by using a second reaction gas; and performing a second post-treatment on the thin film by using a second source gas.
摘要翻译：一种制造半导体器件的方法包括：通过使用第一源气体和第一反应气体在沟槽上形成薄膜; 通过使用第二反应气体对所述薄膜进行第一后处理; 以及通过使用第二源气体对所述薄膜进行第二后处理。

8. 发明申请

US20110165690A1 METHOD FOR DIAGNOSING DISEASE USING ADENOVIRUS HARBORING TRANS-SPLICING RIBOZYME BY MOLECULAR IMAGING 有权
标题翻译：用分子成像技术利用腺病毒载体转移分离的RIBOZYME诊断疾病的方法
公开(公告)号：US20110165690A1
公开(公告)日：2011-07-07
申请号：US12522597
申请日：2007-10-26
申请人： In-Hoo Kim , Seong-Wook Lee , Seung-Hee Hong , Jin-Sook Jeong , Yeon-Su Lee , Haeng-Im Jung
发明人： In-Hoo Kim , Seong-Wook Lee , Seung-Hee Hong , Jin-Sook Jeong , Yeon-Su Lee , Haeng-Im Jung
IPC分类号： G01N33/00 , C12N15/63
CPC分类号： A61K49/0045
摘要： Disclosed herein is a composition for molecular imaging comprising a trans-splicing ribozyme coupled with an imaging reporter gene. The trans-splicing ribozyme targets a specific gene associated with a disease. Also disclosed is a molecular imaging method using the composition.
摘要翻译：本文公开了一种用于分子成像的组合物，其包含与成像报道基因偶联的反式拼接核酶。转拼核酶靶向与疾病相关的特定基因。还公开了使用该组合物的分子成像方法。

9. 发明申请

US20100055408A1 Organic anti-reflective layer composition containing ring-opened phthalic anhydride and method for preparation thereof 审中-公开
标题翻译：含有开环邻苯二甲酸酐的有机抗反射层组合物及其制备方法
公开(公告)号：US20100055408A1
公开(公告)日：2010-03-04
申请号：US12321091
申请日：2009-01-15
申请人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
发明人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
IPC分类号： B32B3/10 , C07C69/76 , C08K5/12 , C08K5/41 , C08K5/36 , H01L21/306
CPC分类号： C07C69/76 , C07C69/753 , C07C69/92 , C07C317/44 , C07C323/62 , C07C2602/44 , G03F7/091 , Y10T428/24612
摘要： A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: wherein A represents a substituted or unsubstituted, linear or branched, saturated tetravalent hydrocarbon group, a substituted or unsubstituted, linear or branched, saturated hydrocarbon group and containing one or more heteroatoms, a substituted or unsubstituted aromatic group, a substituted or unsubstituted heteroaromatic group, a substituted or unsubstituted alicyclic group, a substituted or unsubstituted heteroalicyclic group, a substituted or unsubstituted diaryl ether, a substituted or unsubstituted diaryl sulfide, a substituted or unsubstituted diaryl sulfoxide, a substituted or unsubstituted diaryl ketone, or a substituted or unsubstituted diaryl bisphenol A; R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group a substituted or unsubstituted aryl group, a substituted or unsubstituted acetal group, or a substituted or unsubstituted hydroxyl group; and n is an integer from 2 to 500.
摘要翻译：提供用于形成由下式1或式2表示的有机抗反射层的光吸收剂：其中A表示取代或未取代的直链或支链饱和四价烃基，取代或未取代的直链或支链饱和烃基，含有一个或多个杂原子，取代或未取代的芳族基团，取代或未取代的杂芳族基团，取代或未取代的脂环族基团，取代或未取代的杂脂族基团，取代或未取代的二芳基醚，取代或未取代的二芳基硫醚，取代或未取代的二芳基亚砜，取代或未取代的二芳基酮，或取代或未取代的二芳基双酚A; R 1，R 2和R 3各自独立地表示氢原子，卤素原子，取代或未取代的烷基，取代或未取代的芳基，取代或未取代的缩醛基或取代或未取代的羟基; n为2〜500的整数。

10. 发明授权

US08357482B2 Organic anti-reflective layer composition containing ring-opened phthalic anhydride and method for preparation thereof 有权
标题翻译：含有开环邻苯二甲酸酐的有机抗反射层组合物及其制备方法
公开(公告)号：US08357482B2
公开(公告)日：2013-01-22
申请号：US13186101
申请日：2011-07-19
申请人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
发明人： Jong-Don Lee , Jun-Ho Lee , Shin-Hyo Bae , Seung-Hee Hong , Seung-Duk Cho
IPC分类号： G02B5/22 , C08K5/03 , C08L33/00 , C08L63/00
CPC分类号： C07C69/76 , C07C69/753 , C07C69/92 , C07C317/44 , C07C323/62 , C07C2602/44 , G03F7/091 , Y10T428/24612
摘要： A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: wherein A represents a substituted or unsubstituted, linear or branched, saturated tetravalent hydrocarbon group, a substituted or unsubstituted, linear or branched, saturated hydrocarbon group and containing one or more heteroatoms, a substituted or unsubstituted aromatic group, a substituted or unsubstituted heteroaromatic group, a substituted or unsubstituted alicyclic group, a substituted or unsubstituted heteroalicyclic group, a substituted or unsubstituted diaryl ether, a substituted or unsubstituted diaryl sulfide, a substituted or unsubstituted diaryl sulfoxide, a substituted or unsubstituted diaryl ketone, or a substituted or unsubstituted diaryl bisphenol A; R1, R2, and R3 each independently represent a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted acetal group, or a substituted or unsubstituted hydroxyl group; and n is an integer from 2 to 500.
摘要翻译：提供用于形成由下式1或式2表示的有机抗反射层的光吸收剂：其中A表示取代或未取代的直链或支链饱和四价烃基，取代或未取代的直链或支链饱和烃基，含有一个或多个杂原子，取代或未取代的芳族基团，取代或未取代的杂芳族基团，取代或未取代的脂环族基团，取代或未取代的杂脂族基团，取代或未取代的二芳基醚，取代或未取代的二芳基硫醚，取代或未取代的二芳基亚砜，取代或未取代的二芳基酮，或取代或未取代的二芳基双酚A; R 1，R 2和R 3各自独立地表示氢原子，卤素原子，取代或未取代的烷基，取代或未取代的芳基，取代或未取代的缩醛基或取代或未取代的羟基; n为2〜500的整数。

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