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1. 发明授权

US08841218B2 Resist underlayer composition and process of producing integrated circuit devices using same 有权
标题翻译：抗蚀底层组成和使用其制造集成电路器件的工艺
公开(公告)号：US08841218B2
公开(公告)日：2014-09-23
申请号：US13571751
申请日：2012-08-10
申请人： Kwen-Woo Han , Mi-Young Kim , Woo-Jin Lee , Han-Song Lee , Seung-Hee Hong , Sang-Kyun Kim , Jin-Wook Lee
发明人： Kwen-Woo Han , Mi-Young Kim , Woo-Jin Lee , Han-Song Lee , Seung-Hee Hong , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： H01L21/311 , C08L83/06
CPC分类号： C08L83/06 , G03F7/0752 , G03F7/091 , G03F7/094
摘要： A resist underlayer composition, including a solvent, and an organosilane condensation polymerization product of hydrolyzed products produced from a compound represented by Chemical Formula 1, a compound represented by Chemical Formula 2, and a compound represented by Chemical Formula 3.
摘要翻译：包含溶剂的抗蚀剂底层组合物和由化学式1表示的化合物，由化学式2表示的化合物和由化学式3表示的化合物制备的水解产物的有机硅烷缩聚产物。

2. 发明授权

US08766411B2 Filler for filling a gap, method of preparing the same and method of manufacturing semiconductor capacitor using the same 有权
标题翻译：用于填充间隙的填料，其制备方法以及使用其制造半导体电容器的方法
公开(公告)号：US08766411B2
公开(公告)日：2014-07-01
申请号：US13548519
申请日：2012-07-13
申请人： Eun-Su Park , Bong-Hwan Kim , Sang-Hak Lim , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Sang-Kyun Kim , Jin-Wook Lee
发明人： Eun-Su Park , Bong-Hwan Kim , Sang-Hak Lim , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： H01L23/58
CPC分类号： C08G77/62 , C01B21/087 , H01L28/90
摘要： A filler for filling a gap includes a compound represented by the following Chemical Formula 1. SiaNbOcHd. [Chemical Formula 1] In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, 0, and H, respectively, in the compound, 1.96
摘要翻译：用于填充间隙的填料包括由以下化学式1表示的化合物。SiaNbOcHd。 [化学式1]在化学式1中，a，b，c和d分别表示化合物中的Si，N，O和H的相对量，1.96

3. 发明授权

US09096726B2 Composition for forming silica based insulating layer, method for manufacturing composition for forming silica based insulating layer, silica based insulating layer and method for manufacturing silica based insulating layer 有权
标题翻译：用于形成二氧化硅基绝缘层的组合物，用于形成二氧化硅基绝缘层的组合物的制造方法，二氧化硅基绝缘层和二氧化硅基绝缘层的制造方法
公开(公告)号：US09096726B2
公开(公告)日：2015-08-04
申请号：US13339728
申请日：2011-12-29
申请人： Sang-Hak Lim , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
发明人： Sang-Hak Lim , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： B05D3/02 , C08G77/54 , H01L21/02 , H01L49/02
CPC分类号： C08G77/54 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L28/40
摘要： A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less:
摘要翻译：用于形成二氧化硅基绝缘层的组合物包括氢化聚硅氧氮烷，其包含由以下化学式1表示的部分和由以下化学式2表示的部分，并且具有约1ppm或更低的氯浓度：

4. 发明授权

US09082612B2 Composition for forming a silica layer, method of manufacturing the composition, silica layer prepared using the composition, and method of manufacturing the silica layer 有权
标题翻译：用于形成二氧化硅层的组合物，制备组合物的方法，使用该组合物制备的二氧化硅层，以及制备二氧化硅层的方法
公开(公告)号：US09082612B2
公开(公告)日：2015-07-14
申请号：US13330856
申请日：2011-12-20
申请人： Hui-Chan Yun , Taek-Soo Kwak , Bong-Hwan Kim , Jin-Hee Bae , Jung-Kang Oh , Sang-Hak Lim , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
发明人： Hui-Chan Yun , Taek-Soo Kwak , Bong-Hwan Kim , Jin-Hee Bae , Jung-Kang Oh , Sang-Hak Lim , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： H01L21/02 , C09D183/02 , C08L83/16 , B32B9/00 , C09D183/00 , B05D5/12 , B05D5/00 , C09D183/08
CPC分类号： H01L21/02282 , B05D5/00 , B05D5/12 , B32B9/00 , C08G77/54 , C08G77/62 , C08L83/14 , C08L83/16 , C09D183/00 , C09D183/02 , C09D183/08 , C09D183/14 , C09D183/16 , H01L21/02164 , H01L21/02222 , Y10T428/24355
摘要： A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.
摘要翻译：用于形成二氧化硅层的组合物，该组合物的制造方法，使用该组合物制备的二氧化硅层，以及二氧化硅层的制造方法，包含氢化聚硅氮烷，氢化聚硅氧氮烷或其组合的组合物，其中，基于氢化聚硅氮烷和氢化聚硅氧氮烷的总量，氢化聚硅氮烷和氢化聚硅氧氮烷的总重量平均分子量（减少为聚苯乙烯）大于或等于约50,000的总量为约0.1重量％以下。

5. 发明申请

US20130017662A1 FILLER FOR FILLING A GAP, METHOD OF PREPARING THE SAME AND METHOD OF MANUFACTURING SEMICONDUCTOR CAPACITOR USING THE SAME 有权
标题翻译：用于填充气隙的填充物，其制备方法和使用其制造半导体电容器的方法
公开(公告)号：US20130017662A1
公开(公告)日：2013-01-17
申请号：US13548519
申请日：2012-07-13
申请人： Eun-Su PARK , Bong-Hwan Kim , Sang-Hak Lim , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Sang-Kyun Kim , Jin-Wook Lee
发明人： Eun-Su PARK , Bong-Hwan Kim , Sang-Hak Lim , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： C09D5/34 , H01L21/02
CPC分类号： C08G77/62 , C01B21/087 , H01L28/90
摘要： A filler for filling a gap includes a compound represented by the following Chemical Formula 1.[Chemical Formula 1]SiaNbOcHd.In Chemical Formula 1, a, b, c, and d represent relative amounts of Si, N, O, and H, respectively, in the compound, 1.96
摘要翻译：用于填充间隙的填料包括由以下化学式1表示的化合物。[化学式1] SiaNbOcHd。在化学式1中，a，b，c和d分别表示化合物中的Si，N，O和H的相对量，1.96

6. 发明申请

US20120177829A1 COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, METHOD FOR MANUFACTURING COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, SILICA BASED INSULATING LAYER AND METHOD FOR MANUFACTURING SILICA BASED INSULATING LAYER 有权
标题翻译：用于形成二氧化硅基绝缘层的组合物，用于制造基于二氧化硅的绝缘层的组合物的方法，基于二氧化硅的绝缘层和用于制造基于二氧化硅的绝缘层的方法
公开(公告)号：US20120177829A1
公开(公告)日：2012-07-12
申请号：US13339728
申请日：2011-12-29
申请人： Sang-Hak LIM , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-II Han , Sang-Kyun Kim , Jin-Wook Lee
发明人： Sang-Hak LIM , Bong-Hwan Kim , Jung-Kang Oh , Taek-Soo Kwak , Jin-Hee Bae , Hui-Chan Yun , Dong-II Han , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： C08L83/00 , B05D3/02 , B05D3/00
CPC分类号： C08G77/54 , H01L21/02164 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L28/40
摘要： A composition for forming silica-based insulation layer includes a hydrogenated polysiloxazane including a moiety represented by the following Chemical Formula 1 and a moiety represented by the following Chemical Formula 2, and having a chlorine concentration of about 1 ppm or less:
摘要翻译：用于形成二氧化硅基绝缘层的组合物包括氢化聚硅氧氮烷，其包含由以下化学式1表示的部分和由以下化学式2表示的部分，并且具有约1ppm或更低的氯浓度：

7. 发明申请

US20120164382A1 COMPOSITION FOR FORMING A SILICA LAYER, METHOD OF MANUFACTURING THE COMPOSITION, SILICA LAYER PREPARED USING THE COMPOSITION, AND METHOD OF MANUFACTURING THE SILICA LAYER 有权
标题翻译：用于形成二氧化硅层的组合物，制备组合物的方法，使用该组合物制备的二氧化硅层和制备二氧化硅层的方法
公开(公告)号：US20120164382A1
公开(公告)日：2012-06-28
申请号：US13330856
申请日：2011-12-20
申请人： Hui-Chan YUN , Taek-Soo Kwak , Bong-Hwan Kim , Jin-Hee Bae , Jung-Kang Oh , Sang-Hak Lim , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
发明人： Hui-Chan YUN , Taek-Soo Kwak , Bong-Hwan Kim , Jin-Hee Bae , Jung-Kang Oh , Sang-Hak Lim , Dong-Il Han , Sang-Kyun Kim , Jin-Wook Lee
IPC分类号： C09D183/00 , B32B9/00 , B05D5/12
CPC分类号： H01L21/02282 , B05D5/00 , B05D5/12 , B32B9/00 , C08G77/54 , C08G77/62 , C08L83/14 , C08L83/16 , C09D183/00 , C09D183/02 , C09D183/08 , C09D183/14 , C09D183/16 , H01L21/02164 , H01L21/02222 , Y10T428/24355
摘要： A composition for forming a silica layer, a method of manufacturing the composition, a silica layer prepared using the composition, and a method of manufacturing the silica layer, the composition including hydrogenated polysilazane, hydrogenated polysiloxazane, or a combination thereof, wherein a concentration of a sum of hydrogenated polysilazane and hydrogenated polysiloxazane having a weight average molecular weight, reduced to polystyrene, of greater than or equal to about 50,000 is about 0.1 wt % or less, based on a total amount of the hydrogenated polysilazane and hydrogenated polysiloxazane.
摘要翻译：用于形成二氧化硅层的组合物，该组合物的制造方法，使用该组合物制备的二氧化硅层，以及二氧化硅层的制造方法，包含氢化聚硅氮烷，氢化聚硅氧氮烷或其组合的组合物，其中，基于氢化聚硅氮烷和氢化聚硅氧氮烷的总量，氢化聚硅氮烷和氢化聚硅氧氮烷的总重量平均分子量（减少为聚苯乙烯）大于或等于约50,000的总量为约0.1重量％以下。

8. 发明授权

US09005387B2 Method for fabricating a window member of the display device of a portable terminal 有权
标题翻译：便携式终端的显示装置的窗口部件的制造方法
公开(公告)号：US09005387B2
公开(公告)日：2015-04-14
申请号：US13405475
申请日：2012-02-27
申请人： Myung-Gon Kim , Jong-In Ryu , Jin-Wook Lee
发明人： Myung-Gon Kim , Jong-In Ryu , Jin-Wook Lee
IPC分类号： B29C45/14 , B32B17/10 , B32B37/10 , B32B37/12
CPC分类号： B32B17/10816 , B32B37/10 , B32B2037/1253 , B32B2307/412 , B32B2457/00 , B32B2457/208 , H04B1/3888
摘要： A method for fabricating a window member for a display device of a portable terminal includes: fabricating a high-hardness sheet to be attached to a surface of the window member (‘sheet fabrication step’), fabricating a body of the window member with a high-polymer synthetic resin (‘body fabrication step’), and attaching the high-hardness sheet to an outer surface of the body (‘attaching step’), in which the outer surface of the body is formed to have a curved surface in the body fabrication step.
摘要翻译：一种用于制造便携式终端的显示装置的窗构件的方法包括：制造要附接到窗构件的表面的高硬度片（“片制造步骤”），用窗口构件的主体高分子合成树脂（“身体制造步骤”），并将高硬度片材附着到主体的外表面（“安装步骤”），其中主体的外表面形成为具有弯曲表面身体制作步骤。

9. 发明申请

US20130054759A1 ELECTRONIC APPARATUS AND METHOD FOR TRANSFERRING CONTENTS ON CLOUD SYSTEM TO DEVICE CONNECTED TO DLNA 有权
标题翻译：用于将云系统内容传送到连接到DLNA的设备的电子设备和方法
公开(公告)号：US20130054759A1
公开(公告)日：2013-02-28
申请号：US13601897
申请日：2012-08-31
申请人： Byung-Soo Lim , Jin-Hyoung Kim , Jin-Wook Lee
发明人： Byung-Soo Lim , Jin-Hyoung Kim , Jin-Wook Lee
IPC分类号： G06F15/16
CPC分类号： H04L65/4084 , H04L12/2812 , H04L12/2836 , H04N21/2353 , H04N21/4402
摘要： An electronic apparatus is capable of transferring contents on a cloud system to a device connected to a DLNA. In a method for operating a client on the cloud service system, a stream meta data table including information of one or more contents is received from a server. Meta data of contents selected from the contents are converted such that the meta data coincide with a format used by a device selected from one or more devices connected to a network. The selected contents are streamed from the server and transferred to the selected device.
摘要翻译：电子设备能够将云系统上的内容传送到连接到DLNA的设备。在用于在云服务系统上操作客户端的方法中，从服务器接收包括一个或多个内容的信息的流元数据表。从内容中选择的内容的元数据被转换为使得元数据与从连接到网络的一个或多个设备中选择的设备使用的格式一致。所选内容从服务器流式传输到所选设备。

10. 发明授权

US08339196B2 Combined cell doherty power amplification apparatus and method 有权
标题翻译：组合式电池功率放大装置及方法
公开(公告)号：US08339196B2
公开(公告)日：2012-12-25
申请号：US12967404
申请日：2010-12-14
申请人： Sung-Chul Hong , Jin-Wook Lee
发明人： Sung-Chul Hong , Jin-Wook Lee
IPC分类号： H03F3/68
CPC分类号： H03F1/0288 , H03F3/602
摘要： A Doherty power amplification apparatus and method using a combined cell are provided. The Doherty power amplification apparatus includes, a power splitter for splitting an input power, and outputting the split powers to a carrier amplification unit and (N−1) peaking amplification units, wherein the carrier amplification unit, including M carrier power amplifiers, for amplifying power output from the power splitter; the (N−1) peaking amplification units, each of which includes M peaking power amplifiers, for amplifying the respective split powers output from the power splitter, and a power combiner for combining a power amplified by the carrier amplification unit and the respective split powers amplified by the (N−1) peaking amplification units, and for outputting the combined power, wherein N represents an integer obtained by adding a number of the carrier amplification units and a number of the (N−1) peaking amplification units, and M represents an integer which is equal to or more than 1.
摘要翻译：提供了一种使用组合电池的Doherty功率放大装置和方法。 Doherty功率放大装置包括：功率分配器，用于分离输入功率，并将分离功率输出到载波放大单元和（N-1）峰化放大单元，其中载波放大单元包括M个载波功率放大器，用于放大功率分配器的功率输出; 每个包括M个峰值功率放大器的（N-1）个峰值放大单元，用于放大从功率分配器输出的相应的分离功率;以及功率组合器，用于组合由载波放大单元放大的功率和相应的分离功率（N-1）峰化放大单元放大，并输出组合功率，其中N表示通过将多个载波放大单元和多个（N-1）个峰值放大单元相加得到的整数，M 表示等于或大于1的整数。

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