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    • 1. 发明授权
    • Controlled sulfur species deposition process
    • 受控硫物质沉积过程
    • US07811634B2
    • 2010-10-12
    • US10767912
    • 2004-01-29
    • Yongbao XinJim StilesChi Kit LeungTerry HuntJoe Acchione
    • Yongbao XinJim StilesChi Kit LeungTerry HuntJoe Acchione
    • C23C16/00
    • H05B33/10C09K11/7734C23C14/0021C23C14/0623C23C14/548H05B33/14
    • The present invention is a method for the deposition of a thin film of a pre-determined composition onto a substrate, the thin film comprising ternary, quaternary or higher sulfide compounds selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. The method comprises volatizing at least one source material of a sulfide of a pre-determined composition to form a sulfur-bearing thin film composition on a substrate and simultaneously inhibiting any excess quantity of sulfur-bearing species volatilized from the at least one source material from impinging on the substrate. The method improves the luminance and emission spectrum of phosphor materials used for full color ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.
    • 本发明是一种用于将预定组合物的薄膜沉积到基底上的方法,所述薄膜包含三元,四元或更高级硫化物,其选自硫代铝酸盐,硫代镓酸盐和至少一种元素的硫代酸盐 来自周期表IIA和IIB组。 该方法包括使预定组合物的硫化物的至少一种源材料挥发,以在基材上形成含硫薄膜组合物并同时抑制从至少一种源材料挥发的任何过量的含硫物质 撞击基板。 该方法提高了使用具有高介电常数的厚膜电介质层的全色交流电致发光显示器的荧光体材料的亮度和发射光谱。