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    • 1. 发明授权
    • Hydrogen sulfide injection method for phosphor deposition
    • 用于荧光体沉积的硫化氢注入方法
    • US07585545B2
    • 2009-09-08
    • US10878221
    • 2004-06-28
    • Yongbao XinJoe AcchioneTerry Hunt
    • Yongbao XinJoe AcchioneTerry Hunt
    • C23C16/00
    • C09K11/7774C23C14/0021C23C14/0623H05B33/14
    • The invention is a method of vacuum evaporation of a multi-element sulfur bearing thin film compositions onto a substrate. The method comprises targeting a source of gas or vapour sulfur species at one or more source materials that make up at least part of the thin film composition during evaporation of the source materials. The sulfur species is heated to a high temperature as it reaches the one or more source materials and there is a chemical interaction of the sulfur species with evaporant from the one or more source materials during deposition of said thin film composition. The method is particularly useful for the deposition of phosphors for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.
    • 本发明是将多元素含硫薄膜组合物真空蒸发到基底上的方法。 该方法包括在源材料蒸发期间将一种或多种源材料的气源或蒸汽硫物质的源定位成组成至少部分薄膜组合物的源材料。 硫物质在达到一种或多种源材料时被加热至高温,并且在沉积所述薄膜组合物期间硫物质与蒸发剂与蒸发剂的化学相互作用。 该方法对于使用具有高介电常数的厚膜电介质层的全色交流电致发光显示器的荧光体的沉积特别有用。
    • 2. 发明授权
    • Light emitting device with a stopper layer structure
    • 具有阻挡层结构的发光器件
    • US07923925B2
    • 2011-04-12
    • US12273972
    • 2008-11-19
    • Thomas MacElweeJean-Paul NoelDean DucharmeYongbao Xin
    • Thomas MacElweeJean-Paul NoelDean DucharmeYongbao Xin
    • H01J1/62H01J63/04
    • H01L33/02H01L33/42
    • Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.
    • 提供电致发光(EL)器件结构,其包括热电子阻挡层结构以捕获热电子并耗散其能量,从而减少对透明导电氧化物(TCO)层的损伤并减少其他热电子效应,例如充电效应,其影响 EL器件结构的可靠性。 阻挡层结构可以包括设置在TCO电极层和发射极结构之间的单层或多层,并且还可以起到减少TCO和发射极层结构之间的扩散或化学相互作用的作用。 可选地,也可以在发射器结构内设置阻挡层。 合适的阻挡层材料是宽带隙半导体或电介质,优选在由EL器件发射的波长处是透明的,其特征在于高冲击电离速率和/或相对于发射极结构的相邻层的高相对介电常数。
    • 7. 发明申请
    • LIGHT EMITTING DEVICE WITH A STOPPER LAYER STRUCTURE
    • 具有停止层结构的发光装置
    • US20090128029A1
    • 2009-05-21
    • US12273972
    • 2008-11-19
    • Thomas MacelweeJean-Paul NoelDean DucharmeYongbao Xin
    • Thomas MacelweeJean-Paul NoelDean DucharmeYongbao Xin
    • H01L51/52
    • H01L33/02H01L33/42
    • Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.
    • 提供电致发光(EL)器件结构,其包括热电子阻挡层结构以捕获热电子并耗散其能量,从而减少对透明导电氧化物(TCO)层的损伤并减少其他热电子效应,例如充电效应,其影响 EL器件结构的可靠性。 阻挡层结构可以包括设置在TCO电极层和发射极结构之间的单层或多层,并且还可以起到减少TCO和发射极层结构之间的扩散或化学相互作用的作用。 可选地,也可以在发射器结构内设置阻挡层。 合适的阻挡层材料是宽带隙半导体或电介质,优选在由EL器件发射的波长处是透明的,其特征在于高冲击电离速率和/或相对于发射极结构的相邻层的高相对介电常数。
    • 10. 发明授权
    • Controlled sulfur species deposition process
    • 受控硫物质沉积过程
    • US07811634B2
    • 2010-10-12
    • US10767912
    • 2004-01-29
    • Yongbao XinJim StilesChi Kit LeungTerry HuntJoe Acchione
    • Yongbao XinJim StilesChi Kit LeungTerry HuntJoe Acchione
    • C23C16/00
    • H05B33/10C09K11/7734C23C14/0021C23C14/0623C23C14/548H05B33/14
    • The present invention is a method for the deposition of a thin film of a pre-determined composition onto a substrate, the thin film comprising ternary, quaternary or higher sulfide compounds selected from the group consisting of thioaluminates, thiogallates and thioindates of at least one element from Groups IIA and IIB of the Periodic Table. The method comprises volatizing at least one source material of a sulfide of a pre-determined composition to form a sulfur-bearing thin film composition on a substrate and simultaneously inhibiting any excess quantity of sulfur-bearing species volatilized from the at least one source material from impinging on the substrate. The method improves the luminance and emission spectrum of phosphor materials used for full color ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.
    • 本发明是一种用于将预定组合物的薄膜沉积到基底上的方法,所述薄膜包含三元,四元或更高级硫化物,其选自硫代铝酸盐,硫代镓酸盐和至少一种元素的硫代酸盐 来自周期表IIA和IIB组。 该方法包括使预定组合物的硫化物的至少一种源材料挥发,以在基材上形成含硫薄膜组合物并同时抑制从至少一种源材料挥发的任何过量的含硫物质 撞击基板。 该方法提高了使用具有高介电常数的厚膜电介质层的全色交流电致发光显示器的荧光体材料的亮度和发射光谱。