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    • 2. 发明申请
    • Prism sheet of back light unit for lcd
    • 液晶显示器背光单元棱镜片
    • US20070097708A1
    • 2007-05-03
    • US10562263
    • 2003-10-13
    • Young-shig ShimSung-Min ChoSoon-Ryong ParkEun-Mi Lee
    • Young-shig ShimSung-Min ChoSoon-Ryong ParkEun-Mi Lee
    • F21V7/04
    • G02B6/0053G02B5/045G02F1/133606
    • Disclosed is a prism sheet structure that can control optical coupling between contact surfaces of two prism sheets in a backlight unit. The prism sheet includes: a structural surface (14) having non-planar peaks (11) with maximum height and minimum height along a length direction thereof; and a curved layer (17) having the same cycle as a cycle of height variation of the peak. The curved layer is formed at a boundary surface (16) between the structural surface 14 and the flat surface to maintain the right-angled isosceles triangular prisms formed due to a difference between the highest point and the lowest point of each of the peaks to have a predetermined size, so that distance between the valleys (12) is uniform along the length direction. Although shapes of prisms are identical, the cycle of the peak height variation allows the moire patterns to be suppressed or removed.
    • 公开了一种棱镜片结构,其可以控制背光单元中的两个棱镜片的接触表面之间的光耦合。 棱镜片包括:具有沿着其长度方向具有最大高度和最小高度的非平面峰(11)的结构表面(14) 以及具有与峰值的高度变化的周期相同周期的弯曲层(17)。 弯曲层形成在结构表面14和平坦表面之间的边界表面(16)处,以保持由于每个峰的最高点和最低点之间的差异而形成的直角等腰三角棱镜具有 使得谷(12)之间的距离沿着长度方向是均匀的。 虽然棱镜的形状是相同的,但是峰高变化的周期允许抑制或去除莫尔图案。
    • 3. 发明授权
    • Prism sheet of back light unit for LCD
    • LCD背光单元棱镜片
    • US07488095B2
    • 2009-02-10
    • US10562263
    • 2003-10-13
    • Young-Shig ShimSung-Min ChoSoon-Ryong ParkEun-Mi Lee
    • Young-Shig ShimSung-Min ChoSoon-Ryong ParkEun-Mi Lee
    • F21V7/04
    • G02B6/0053G02B5/045G02F1/133606
    • Disclosed is a prism sheet structure that can control optical coupling between contact surfaces of two prism sheets in a backlight unit. The prism sheet includes: a structural surface (14) having non-planar peaks (11) with maximum height and minimum height along a length direction thereof; and a curved layer (17) having the same cycle as a cycle of height variation of the peak. The curved layer is formed at a boundary surface (16) between the structural surface 14 and the flat surface to maintain the right-angled isosceles triangular prisms formed due to a difference between the highest point and the lowest point of each of the peaks to have a predetermined size, so that distance between the valleys (12) is uniform along the length direction. Although shapes of prisms are identical, the cycle of the peak height variation allows the moiré´ patterns to be suppressed or removed.
    • 公开了一种棱镜片结构,其可以控制背光单元中的两个棱镜片的接触表面之间的光耦合。 棱镜片包括:具有沿着其长度方向具有最大高度和最小高度的非平面峰(11)的结构表面(14) 以及具有与峰值的高度变化的周期相同周期的弯曲层(17)。 弯曲层形成在结构表面14和平坦表面之间的边界表面(16)处,以保持由于每个峰的最高点和最低点之间的差异而形成的直角等腰三角棱镜具有 使得谷(12)之间的距离沿着长度方向是均匀的。 虽然棱镜的形状是相同的,但是峰高变化的周期允许抑制或去除莫尔图案。
    • 5. 发明授权
    • Method of forming self-aligned contact pads of non-straight type semiconductor memory device
    • 形成非直型半导体存储器件的自对准接触焊盘的方法
    • US07064051B2
    • 2006-06-20
    • US10944151
    • 2004-09-16
    • Eun-Mi LeeDoo-Hoon GooJung-Hyeon LeeGi-Sung Yeo
    • Eun-Mi LeeDoo-Hoon GooJung-Hyeon LeeGi-Sung Yeo
    • H01L21/3205H01L21/4763
    • H01L21/76897H01L23/485H01L2924/0002H01L2924/00
    • Embodiments of the invention provide methods of forming SAC pads in non-straight semiconductor device having non-straight type or separate type active regions. A plurality of gate line structures extending in one direction may be formed on a semiconductor substrate having non-straight active regions. An interlayer insulating layer covering gate line structures may be formed on the gate line structures. Then, a photo-resist layer may be formed on the interlayer insulating layer. A photo-resist pattern may be formed through exposing and developing the photo-resist layer by using a photo-mask having, for example, a bar type, a wave type, or a reverse active type pattern. Then, contact holes exposing source/drain regions may be formed by etching the interlayer insulating layer using the photo-resist pattern as an etching mask. Contact pads may then be formed by filling the contact holes with a conductive material.
    • 本发明的实施例提供了在具有非直型或分离型有源区的非直线半导体器件中形成SAC焊盘的方法。 可以在具有非直线活性区域的半导体衬底上形成沿一个方向延伸的多个栅极线结构。 覆盖栅极线结构的层间绝缘层可以形成在栅极线结构上。 然后,可以在层间绝缘层上形成光致抗蚀剂层。 可以通过使用具有例如条形,波型或反向活性型图案的光掩模,通过曝光和显影光致抗蚀剂层来形成光刻胶图案。 然后,可以通过使用光刻胶图案作为蚀刻掩模蚀刻层间绝缘层来形成暴露源极/漏极区的接触孔。 然后可以通过用导电材料填充接触孔来形成接触垫。
    • 8. 发明申请
    • System and method of predicting traffic speed based on speed of neighboring link
    • 基于相邻链路速度预测流量速度的系统和方法
    • US20080033630A1
    • 2008-02-07
    • US11493088
    • 2006-07-26
    • Eun-Mi LeeSung-Hwa LimJae-Hoon KimWon-Sik YoonByung-Soo Kim
    • Eun-Mi LeeSung-Hwa LimJae-Hoon KimWon-Sik YoonByung-Soo Kim
    • G08G1/00G08G1/123
    • G08G1/0104
    • The present invention relates to a system and a method of predicting traffic speed based on the speeds of neighboring links. A system for predicting traffic speed on a link basis, on a map based on a past traffic patterns, includes a prediction model establishment unit that establishes a neighboring link speed-based prediction model including the correlation between the speed of each link and the speeds of neighboring links based on real-time traffic information accumulated in a real-time traffic information database for a predetermined time, a prediction model database that stores the established neighboring link speed-based prediction model data, and a traffic speed prediction unit that inputs real-time neighboring link speed information for a specific object link to the neighboring link speed-based prediction model and predicts an output value according to the real-time neighboring link speed information as the traffic speed of the object link.
    • 本发明涉及一种基于相邻链路的速度来预测业务速度的系统和方法。 基于过去的业务模式,在地图上基于链路预测业务速度的系统包括建立基于链路速度的相邻预测模型的预测模型建立单元,该预测模型建立单元包括每个链路的速度与每个链路的速度之间的相关性 基于在实时交通信息数据库中累积的预定时间的实时交通信息的相邻链路,存储所建立的相邻链路速度预测模型数据的预测模型数据库, 并且根据实时邻近链路速度信息将输出值预测为对象链路的传输速度。
    • 10. 发明申请
    • Method of forming self-aligned contact pads of non-straight type semiconductor memory device
    • 形成非直型半导体存储器件的自对准接触焊盘的方法
    • US20050070080A1
    • 2005-03-31
    • US10944151
    • 2004-09-16
    • Eun-Mi LeeDoo-Hoon GooJung-Hyeon LeeGi-Sung Yeo
    • Eun-Mi LeeDoo-Hoon GooJung-Hyeon LeeGi-Sung Yeo
    • H01L21/28H01L21/4763H01L21/60H01L23/485
    • H01L21/76897H01L23/485H01L2924/0002H01L2924/00
    • Embodiments of the invention provide methods of forming SAC pads in non-straight semiconductor device having non-straight type or separate type active regions. A plurality of gate line structures extending in one direction may be formed on a semiconductor substrate having non-straight active regions. An interlayer insulating layer covering gate line structures may be formed on the gate line structures. Then, a photo-resist layer may be formed on the interlayer insulating layer. A photo-resist pattern may be formed through exposing and developing the photo-resist layer by using a photo-mask having, for example, a bar type, a wave type, or a reverse active type pattern. Then, contact holes exposing source/drain regions may be formed by etching the interlayer insulating layer using the photo-resist pattern as an etching mask. Contact pads may then be formed by filling the contact holes with a conductive material.
    • 本发明的实施例提供了在具有非直型或分离型有源区的非直线半导体器件中形成SAC焊盘的方法。 可以在具有非直线活性区域的半导体衬底上形成沿一个方向延伸的多个栅极线结构。 覆盖栅极线结构的层间绝缘层可以形成在栅极线结构上。 然后,可以在层间绝缘层上形成光致抗蚀剂层。 可以通过使用具有例如棒型,波型或反向活性型图案的光掩模,通过曝光和显影光致抗蚀剂层来形成光致抗蚀剂图案。 然后,可以通过使用光刻胶图案作为蚀刻掩模蚀刻层间绝缘层来形成暴露源极/漏极区的接触孔。 然后可以通过用导电材料填充接触孔来形成接触垫。