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    • 1. 发明授权
    • Chemical mechanical polishing method for manufacturing semiconductor device
    • 化学机械抛光方法制造半导体器件
    • US07265054B2
    • 2007-09-04
    • US11268961
    • 2005-11-08
    • Yong Soo ChoiWon Mo Lee
    • Yong Soo ChoiWon Mo Lee
    • H01L21/461H01L21/302
    • H01L21/3212
    • Disclosed herein is a chemical mechanical polishing (CMP) method for manufacturing a semiconductor device, comprising performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film, and subjecting the partially ion implanted-wafer to a chemical mechanical polishing process. In accordance with the present invention, non-uniformity of the removal rate in a chemical mechanical polishing process is countervailed by dopants which are implanted at different concentrations via partial ion implantation, and thereby it is possible to polish the target film at a uniform removal rate.
    • 本文公开了一种用于制造半导体器件的化学机械抛光(CMP)方法,包括:将具有不同浓度的掺杂剂的部分离子注入到具有平坦化靶膜的晶片的多个至少两个分割区域中, 离子注入晶片进行化学机械抛光工艺。 根据本发明,化学机械抛光工艺中的去除速率的不均匀性被通过部分离子注入以不同浓度注入的掺杂剂抵消,从而可以以均匀的去除速率对目标膜进行抛光 。
    • 7. 发明申请
    • METHOD FOR CHEMICAL MECHANICAL POLISHING IN A SCAN MANNER OF A SEMICONDUCTOR DEVICE
    • 半导体器件扫描仪中的化学机械抛光方法
    • US20080261399A1
    • 2008-10-23
    • US11946110
    • 2007-11-28
    • Yong Soo ChoiGyu Hyun Kim
    • Yong Soo ChoiGyu Hyun Kim
    • H01L21/302
    • H01L21/02074H01L21/67028
    • The chemical mechanical polishing of a semiconductor device includes polishing a target layer to be polished through a chemical reaction by slurry and a mechanical process by a polishing pad. Then performing a post cleaning composed of cleaning, rinsing and drying of the surface of the polished target layer. The parts for cleaning, rinsing and drying procedures are arranged in a row and the post cleaning is performed in a scan manner using a bar type module. Provided at the cleaning and rinsing parts, a solution supplying nozzle and a retrieving nozzle disposed at both sides of the solution supplying nozzle. Finally, removing the solution supplied to the target layer to be polished immediately after the solution comes in contact with the target layer.
    • 半导体器件的化学机械抛光包括通过浆料的化学反应和通过抛光垫的机械过程抛光待抛光的目标层。 然后进行由抛光对象层的表面的清洗,冲洗和干燥构成的后清洗。 用于清洁,冲洗和干燥过程的部件被排列成一排,并且使用条形模块以扫描方式执行后清洗。 在清洁和漂洗部分设置有溶液供应喷嘴和设置在溶液供应喷嘴两侧的回收喷嘴。 最后,在溶液与目标层接触之后,立即将提供给目标层的溶液移除。
    • 10. 发明授权
    • Apparatus and method for converting LSP parameter for voice packet conversion
    • 用于转换语音数据包转换的LSP参数的装置和方法
    • US07307981B2
    • 2007-12-11
    • US10246539
    • 2002-09-19
    • Yong Soo ChoiDae Hee YounKyung Tae Kim
    • Yong Soo ChoiDae Hee YounKyung Tae Kim
    • H04L12/66
    • G10L19/173
    • An apparatus for converting voice packets transmitted/received through a network includes a first transcoder for performing at least one of bit-unpacking and unquantization on an encoded packet at a first encoder, namely transmitting party, to obtain an LSP (Line Spectrum Pair) parameter of the first encoder, and converting and unquantizing the LSP parameter to an LSP parameter of a second encoder, namely receiving party, to do bit-packing. A second transcoder performs at least one of bit-unpacking and unquantization on an encoded packet at the second encoder, namely transmitting party, to obtain an LSP parameter of the second encoder, and converts and unquantizes the LSP parameter to an LSP parameter of the first encoder, namely receiving party, to do bit-packing.
    • 用于转换通过网络发送/接收的语音分组的装置包括:第一代码转换器,用于在第一编码器即发送方处对经编码的分组执行比特解包和非量化中的至少一个,以获得LSP(线谱对)参数 的第一编码器,并且将LSP参数转换和非量化到第二编码器即接收方的LSP参数,以进行位打包。 第二代码转换器在第二编码器即发送方的编码分组上执行比特解包和非量化中的至少一个,以获得第二编码器的LSP参数,并将LSP参数转换和非量化为第一编码器的LSP参数 编码器即接收方,进行位打包。