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    • 2. 发明授权
    • Automatic analysis device
    • 自动分析装置
    • US09194878B2
    • 2015-11-24
    • US14347450
    • 2012-07-31
    • Mitsuru OonumaYoko SatoHajime YamazakiAkihito Wakui
    • Mitsuru OonumaYoko SatoHajime YamazakiAkihito Wakui
    • G01N35/10G01N35/02G01N21/51G01N35/04G01N35/00
    • G01N35/1002G01N21/51G01N35/025G01N2035/00306G01N2035/00316G01N2035/0441
    • An automatic analysis device has a light scattering photometer incorporated therein, and improved accuracy resulting from reducing the influences from external light. The automatic analysis device includes a scattered light measurement unit disposed inside the main-body casing, and openable/closable protective covers to cover the top face of the main-body casing. A first protective cover at the center includes a light-shielding part to block external light. The protective covers include see-through parts enabling viewing of the inside. The light-shielding part is configured to cover an area of the reaction disk at least corresponding to the area above the scattered light measurement unit, thus reducing external light leaking into the scattered light measurement unit, and thus removing influences from external light on the scattered light measurement. The protective cover may have a divided structure.
    • 自动分析装置具有并入其中的光散射光度计,并且通过减少来自外部光的影响而提高了精度。 自动分析装置包括设置在主体外壳内的散射光测量单元和可打开/关闭的保护盖,以覆盖主体外壳的顶面。 中心处的第一保护盖包括遮光部分,以遮挡外部光线。 防护罩包括透视部件,可以观看内部。 所述遮光部被构造为至少覆盖所述反射盘的与所述散射光测量单元上方的区域对应的区域,从而减少外部光泄漏到所述散射光测量单元中,从而去除外部光对散射光的影响 光测量。 保护罩可以具有分开的结构。
    • 6. 发明授权
    • Image processing apparatus and method therefor
    • 图像处理装置及其方法
    • US07616360B2
    • 2009-11-10
    • US11460466
    • 2006-07-27
    • Ritsuko OtakeShinichi KatoTsutomu SakaueYoko SatoYoichi Kashibuchi
    • Ritsuko OtakeShinichi KatoTsutomu SakaueYoko SatoYoichi Kashibuchi
    • G03F3/08G06F15/00G06K9/00
    • H04N1/54H04N1/233H04N1/2369H04N1/52
    • When color materials of more than four colors are used, a signal for the amount of toner used within a range appropriate for the apparatus and toner characteristic is generated using a color separation table. However, a printer receives print data of various formats, such as image data separated into signal values of more than four colors, or image data of a special format to which a six-color separation table cannot be applied. Hence, an image signal representing a combination of colors is input. The sum of the signal values of colors in each pixel of the image signal is calculated and compared with a limit value. When the sum exceeds the limit value, the signal values of base colors are replaced with that of a spot color based on a replacement table for replacing the signal values of the base colors with that of the spot color.
    • 当使用四种颜色的颜色材料时,使用分色台产生在适合于该装置的一定范围内的调色剂量和调色剂特性的信号。 然而,打印机接收各种格式的打印数据,例如分割成四种颜色的信号值的图像数据,或不能应用六色分离表的特殊格式的图像数据。 因此,输入表示颜色的组合的图像信号。 计算图像信号的每个像素中的颜色的信号值之和并将其与极限值进行比较。 当总和超过极限值时,基于用于将基色的信号值替换为专色的替换表的基色的信号值被替换为专色。
    • 7. 发明授权
    • Semiconductor device including transistors having different drain breakdown voltages on a single substrate
    • 半导体器件包括在单个衬底上具有不同漏极击穿电压的晶体管
    • US07375409B2
    • 2008-05-20
    • US10892459
    • 2004-07-15
    • Yoko Sato
    • Yoko Sato
    • H01L27/088
    • H01L21/76283H01L27/1203
    • A semiconductor device is provided comprising a supporting substrate, an insulating layer on the substrate, and a first semiconductor layer on the insulating layer. A first high breakdown-voltage transistor is formed in the first semiconductor layer, a second semiconductor layer is formed on the insulating layer and a second high breakdown-voltage transistor is formed in the second semiconductor layer. A first element isolation region reaching the insulating layer is provided between the first and second semiconductor layers. A third semiconductor layer is formed on the insulating layer, a first low breakdown-voltage transistor is formed in the third semiconductor layer, a second low breakdown-voltage transistor is formed in the third semiconductor layer, and a second element isolation region not reaching the insulating layer is formed in the third semiconductor layer between the first and second low breakdown-voltage transistors. The first element isolation region comprises a dual-trench insulating layer.
    • 提供了一种半导体器件,包括支撑衬底,衬底上的绝缘层和绝缘层上的第一半导体层。 在第一半导体层中形成第一高击穿电压晶体管,在绝缘层上形成第二半导体层,在第二半导体层中形成第二高击穿电压晶体管。 到达绝缘层的第一元件隔离区域设置在第一和第二半导体层之间。 在绝缘层上形成第三半导体层,在第三半导体层中形成第一低击穿电压晶体管,在第三半导体层中形成第二低击穿电压晶体管,在第二半导体层中形成第二低击穿电压晶体管, 绝缘层形成在第一和第二低击穿电压晶体管之间的第三半导体层中。 第一元件隔离区域包括双沟槽绝缘层。