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1. 发明授权

US08044447B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08044447B2
公开(公告)日：2011-10-25
申请号：US12031193
申请日：2008-02-14
申请人： Yoichi Okita , Genichi Komuro
发明人： Yoichi Okita , Genichi Komuro
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L27/11502 , H01L21/76877 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75
摘要： There is provided a semiconductor device including a silicon substrate, a source/drain region formed in a surface layer of the silicon substrate, a first insulating film provided with a first hole on the first source/drain region, a conductive film formed on an inner surface of the first hole, a filler body, which is formed with a thickness to fill the first hole on the first conductive film, forms a first conduct plug together with the conductive film, and is formed of an insulating material with an upper surface being amorphous, and a capacitor, which is formed on the first contact plug and is provided with a lower electrode electrically connected to the conductive film, a capacitor dielectric film formed of a ferroelectric material, and an upper electrode.
摘要翻译：提供了一种半导体器件，包括硅衬底，形成在硅衬底的表面层中的源极/漏极区域，在第一源极/漏极区域上设置有第一孔的第一绝缘膜，形成在内部的导电膜第一孔的表面，形成有填充第一导电膜上的第一孔的厚度的填充体与导电膜一起形成第一导电栓，并且由绝缘材料形成，上表面为非晶体和电容器，其形成在第一接触插塞上并且设置有电连接到导电膜的下电极，由铁电体材料形成的电容器电介质膜和上电极。

2. 发明授权

US07595250B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07595250B2
公开(公告)日：2009-09-29
申请号：US11490252
申请日：2006-07-21
申请人： Yoichi Okita , Genichi Komuro
发明人： Yoichi Okita , Genichi Komuro
IPC分类号： H01L21/44
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/11507 , H01L28/60
摘要： There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the insulating film, etching the second conductive film and the dielectric film into a first pattern shape by using a first mask, removing the first mask, and etching simultaneously the first conductive film and the second conductive film having the first pattern shape by using a second mask to form a plurality of capacitor upper electrodes made of the second conductive film and also form a plate line as a capacitor lower electrode, which is covered with the dielectric film having the first pattern shape and has a contact region, made of the first conductive film. Accordingly, a plurality of capacitors can be formed on the capacitor lower electrode with good precision.
摘要翻译：提供了在半导体基板上形成绝缘膜的步骤，在绝缘膜上依次形成第一导电膜，电介质膜，第二导电膜，通过第二导电膜和电介质膜将第二导电膜和电介质膜蚀刻成第一图案形状使用第一掩模，去除第一掩模，并且通过使用第二掩模同时蚀刻具有第一图案形状的第一导电膜和第二导电膜，以形成由第二导电膜制成的多个电容器上电极，并且还形成板线作为电容器下电极，其被具有第一图案形状的电介质膜覆盖并具有由第一导电膜制成的接触区域。因此，能够以良好的精度在电容器下电极上形成多个电容器。

3. 发明申请

US20050098815A1 LASER HAVING ACTIVE REGION FORMED ABOVE SUBSTRATE 有权
标题翻译：具有形成上层活性区的激光
公开(公告)号：US20050098815A1
公开(公告)日：2005-05-12
申请号：US10351336
申请日：2003-01-27
申请人： Yoichi Okita , Genichi Komuro
发明人： Yoichi Okita , Genichi Komuro
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/06 , H01L27/115 , H01L21/8242 , H01L27/108 , H01L29/94 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/11507 , H01L28/60
摘要： There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the insulating film, etching the second conductive film and the dielectric film into a first pattern shape by using a first mask, removing the first mask, and etching simultaneously the first conductive film and the second conductive film having the first pattern shape by using a second mask to form a plurality of capacitor upper electrodes made of the second conductive film and also form a plate line as a capacitor lower electrode, which is covered with the dielectric film having the first pattern shape and has a contact region, made of the first conductive film. Accordingly, a plurality of capacitors can be formed on the capacitor lower electrode with good precision.
摘要翻译：提供了在半导体基板上形成绝缘膜的步骤，在绝缘膜上依次形成第一导电膜，电介质膜，第二导电膜，通过第二导电膜和电介质膜将第二导电膜和电介质膜蚀刻成第一图案形状使用第一掩模，去除第一掩模，并且通过使用第二掩模同时蚀刻具有第一图案形状的第一导电膜和第二导电膜，以形成由第二导电膜制成的多个电容器上电极，并且还形成板线作为电容器下电极，其被具有第一图案形状的电介质膜覆盖并具有由第一导电膜制成的接触区域。因此，能够以良好的精度在电容器下电极上形成多个电容器。

4. 发明授权

US07906033B2 Plasma etching method and apparatus 有权
标题翻译：等离子体蚀刻方法和装置
公开(公告)号：US07906033B2
公开(公告)日：2011-03-15
申请号：US11168415
申请日：2005-06-29
申请人： Yuuichi Tachino , Minoru Suzuki , Koji Ibi , Genichi Komuro , Yoichi Okita
发明人： Yuuichi Tachino , Minoru Suzuki , Koji Ibi , Genichi Komuro , Yoichi Okita
IPC分类号： C03C15/00 , H01L21/461
CPC分类号： H01J37/321
摘要： A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.
摘要翻译：一种用于蚀刻半导体晶片的等离子体蚀刻装置。等离子体蚀刻装置具有由介电材料制成的反应管和位于反应管周围的高频天线，用于在反应管内产生等离子体。高频天线具有倾斜段，其产生与反应管相对较大的电容耦合。高频天线在水平面内由驱动器围绕反应管移动。

5. 发明申请

US20080142865A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080142865A1
公开(公告)日：2008-06-19
申请号：US12031193
申请日：2008-02-14
申请人： Yoichi Okita , Genichi Komuro
发明人： Yoichi Okita , Genichi Komuro
IPC分类号： H01L29/94 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/76877 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/75
摘要： There is provided a semiconductor device including a silicon substrate, a source/drain region formed in a surface layer of the silicon substrate, a first insulating film provided with a first hole on the first source/drain region, a conductive film formed on an inner surface of the first hole, a filler body, which is formed with a thickness to fill the first hole on the first conductive film, forms a first conduct plug together with the conductive film, and is formed of an insulating material with an upper surface being amorphous, and a capacitor, which is formed on the first contact plug and is provided with a lower electrode electrically connected to the conductive film, a capacitor dielectric film formed of a ferroelectric material, and an upper electrode.
摘要翻译：提供了一种半导体器件，包括硅衬底，形成在硅衬底的表面层中的源极/漏极区域，在第一源极/漏极区域上设置有第一孔的第一绝缘膜，形成在内部的导电膜第一孔的表面，形成有填充第一导电膜上的第一孔的厚度的填充体与导电膜一起形成第一导电栓，并且由绝缘材料形成，上表面为非晶体和电容器，其形成在第一接触插塞上并且设置有电连接到导电膜的下电极，由铁电体材料形成的电容器电介质膜和上电极。

6. 发明授权

US07102186B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US07102186B2
公开(公告)日：2006-09-05
申请号：US10351336
申请日：2003-01-27
申请人： Yoichi Okita , Genichi Komuro
发明人： Yoichi Okita , Genichi Komuro
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L29/00
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/11507 , H01L28/60
摘要： There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the insulating film, etching the second conductive film and the dielectric film into a first pattern shape by using a first mask, removing the first mask, and etching simultaneously the first conductive film and the second conductive film having the first pattern shape by using a second mask to form a plurality of capacitor upper electrodes made of the second conductive film and also form a plate line as a capacitor lower electrode, which is covered with the dielectric film having the first pattern shape and has a contact region, made of the first conductive film. Accordingly, a plurality of capacitors can be formed on the capacitor lower electrode with good precision.

7. 发明申请

US20060258114A1 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US20060258114A1
公开(公告)日：2006-11-16
申请号：US11490252
申请日：2006-07-21
申请人： Yoichi Okita , Genichi Komuro
发明人： Yoichi Okita , Genichi Komuro
IPC分类号： H01L21/467 , H01L21/8239
CPC分类号： H01L27/11502 , H01L27/0629 , H01L27/11507 , H01L28/60
摘要： There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the insulating film, etching the second conductive film and the dielectric film into a first pattern shape by using a first mask, removing the first mask, and etching simultaneously the first conductive film and the second conductive film having the first pattern shape by using a second mask to form a plurality of capacitor upper electrodes made of the second conductive film and also form a plate line as a capacitor lower electrode, which is covered with the dielectric film having the first pattern shape and has a contact region, made of the first conductive film. Accordingly, a plurality of capacitors can be formed on the capacitor lower electrode with good precision.

8. 发明申请

US20050252885A1 Plasma etching method and apparatus 有权
公开(公告)号：US20050252885A1
公开(公告)日：2005-11-17
申请号：US11168415
申请日：2005-06-29
申请人： Yuuichi Tachino , Minoru Suzuki , Koji Ibi , Genichi Komuro , Yoichi Okita
发明人： Yuuichi Tachino , Minoru Suzuki , Koji Ibi , Genichi Komuro , Yoichi Okita
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , C23F1/00
CPC分类号： H01J37/321
摘要： A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.

9. 发明授权

US06926800B2 Plasma etching method and apparatus 失效
标题翻译：等离子体蚀刻方法和装置
公开(公告)号：US06926800B2
公开(公告)日：2005-08-09
申请号：US09775653
申请日：2001-02-05
申请人： Yuuichi Tachino , Minoru Suzuki , Koji Ibi , Genichi Komuro , Yoichi Okita
发明人： Yuuichi Tachino , Minoru Suzuki , Koji Ibi , Genichi Komuro , Yoichi Okita
IPC分类号： C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/321
摘要： A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.
摘要翻译：一种用于蚀刻半导体晶片的等离子体蚀刻装置。等离子体蚀刻装置具有由介电材料制成的反应管和位于反应管周围的高频天线，用于在反应管内产生等离子体。高频天线具有倾斜段，其产生与反应管相对较大的电容耦合。高频天线在水平面内由驱动器围绕反应管移动。

10. 发明授权

US07198960B2 Method for fabricating ferroelectric capacitor 有权
标题翻译：铁电电容器的制造方法
公开(公告)号：US07198960B2
公开(公告)日：2007-04-03
申请号：US11071461
申请日：2005-03-04
申请人： Yoichi Okita
发明人： Yoichi Okita
IPC分类号： H01L21/00
CPC分类号： H01L21/32139 , H01L21/0334 , H01L21/32136 , H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A method for fabricating a ferroelectric memory having memory cells arranged in arrays, wherein an Al2O3 film (2), a Pt film (3), a PZT film (4) and IrO2 film (5) are formed on an interlayer insulation film. At the time of forming a top electrode, the IrO2 film (5) is patterned using a resist mask having a part extending in the row direction, and then patterned using a resist mask having a part extending in the column direction. Consequently, a top electrode of the IrO2 film (5) having a rectangular plan view is formed at the intersection of these resist masks.
摘要翻译：一种用于制造具有排列成阵列的存储单元的铁电存储器的方法，其中Al 2 O 3膜（2），Pt膜（3），PZT膜（ 4）和IrO 2膜（5）形成在层间绝缘膜上。在形成顶部电极时，使用具有沿行方向延伸的部分的抗蚀剂掩模对IrO 2膜（5）进行构图，然后使用具有部分延伸的部分的抗蚀剂掩模列方向。因此，在这些抗蚀剂掩模的交叉处形成具有矩形平面图的IrO 2膜（5）的顶部电极。

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