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1. 发明授权

US08078419B2 Polishing monitoring method and polishing apparatus 有权
标题翻译：抛光监测方法和抛光装置
公开(公告)号：US08078419B2
公开(公告)日：2011-12-13
申请号：US12285604
申请日：2008-10-09
申请人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
发明人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
IPC分类号： G06F19/00 , B24B49/00 , G01B7/06 , G01B5/02 , G01R19/00 , G01C17/38
CPC分类号： G01B7/105 , B24B37/042 , B24B49/105
摘要： A method monitors a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.
摘要翻译：一种方法使用涡流传感器监测抛光过程中膜厚度的变化。该方法包括在修整抛光垫期间或在更换抛光垫期间获取涡流传感器的输出信号作为衬底的水抛光期间的校正信号值，或者在抛光垫的更换期间，从校正之间的差计算校正量信号值和预定的校正基准值，通过在研磨具有导电膜的基板时从涡电流传感器的输出信号中减去校正量，并且在抛光期间监测导电膜的厚度变化来计算实际测量信号值通过监视实际测量信号值的变化。

2. 发明申请

US20090104847A1 Polishing monitoring method and polishing apparatus 有权
标题翻译：抛光监测方法和抛光装置
公开(公告)号：US20090104847A1
公开(公告)日：2009-04-23
申请号：US12285604
申请日：2008-10-09
申请人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
发明人： Yoichi Kobayashi , Taro Takahashi , Yasumasa Hiroo , Akihiko Ogawa , Shinrou Ohta
IPC分类号： B24B51/00
CPC分类号： G01B7/105 , B24B37/042 , B24B49/105
摘要： The present invention provides a method of monitoring a change in film thickness during polishing using an eddy current sensor. This method includes acquiring an output signal of the eddy current sensor as a correction signal value during water-polishing of a substrate, during dressing of the polishing pad, or during replacement of the polishing pad, calculating a correcting amount from a difference between the correction signal value and a predetermined correction reference value, calculating an actual measurement signal value by subtracting the correction amount from the output signal of the eddy current sensor when polishing a substrate having a conductive film, and monitoring a change in thickness of the conductive film during polishing by monitoring a change in the actual measurement signal value.
摘要翻译：本发明提供一种使用涡流传感器来监测在抛光期间膜厚变化的方法。该方法包括在修整抛光垫期间或在更换抛光垫期间获取涡流传感器的输出信号作为衬底的水抛光期间的校正信号值，或者在抛光垫的更换期间，从校正之间的差计算校正量信号值和预定的校正基准值，通过在研磨具有导电膜的基板时从涡电流传感器的输出信号中减去校正量，并且在抛光期间监测导电膜的厚度变化来计算实际测量信号值通过监视实际测量信号值的变化。

3. 发明授权

US08398456B2 Polishing method, polishing apparatus and method of monitoring a substrate 有权
标题翻译：抛光方法，抛光装置和监测基板的方法
公开(公告)号：US08398456B2
公开(公告)日：2013-03-19
申请号：US12767095
申请日：2010-04-26
申请人： Yoichi Kobayashi , Yasumasa Hiroo
发明人： Yoichi Kobayashi , Yasumasa Hiroo
IPC分类号： B24B1/00
CPC分类号： B24B37/042 , B24B49/00
摘要： A method of polishing a substrate includes rotating a polishing table having a polishing surface, holding the substrate by a top ring, bringing the substrate into contact with the polishing surface while swinging and rotating the top ring to polish the substrate, and monitoring a surface condition of the substrate by a monitoring sensor. A rotational speed of the polishing table and conditions of swing motion of the top ring are determined such that a position of the monitoring sensor, a position of a center of rotation of the top ring, and a direction of the swing motion of the top ring at a point of time when a predetermined period of time has elapsed after polishing of the substrate is started approximately coincide with their previous values at a point of time before the predetermined period of time has elapsed.
摘要翻译：抛光衬底的方法包括旋转具有抛光表面的抛光台，通过顶环保持衬底，使得衬底与抛光表面接触，同时摆动并旋转顶环以抛光衬底，并且监测表面条件通过监测传感器。确定抛光台的旋转速度和顶环的摆动运动的条件，使得监测传感器的位置，顶环的旋转中心的位置和顶环的摆动运动的方向在基板的研磨开始经过规定时间后的时间点，与经过了规定时间之前的时间点的先前值大致一致。

4. 发明授权

US06772029B2 Wafer transfer control apparatus and method for transferring wafer 有权
标题翻译：基板转印控制装置和基板转印方法
公开(公告)号：US06772029B2
公开(公告)日：2004-08-03
申请号：US10181293
申请日：2002-07-16
申请人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
发明人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
IPC分类号： G06F1760
CPC分类号： G06Q50/04 , G06Q10/04 , G06Q10/06 , H01L21/67276 , Y02P90/30 , Y10S414/135 , Y10S438/907 , Y10S438/908
摘要： The present invention provides a substrate transfer controlling apparatus which can easily maximize the throughput of a substrate processing apparatus such as a semiconductor fabrication apparatus, and can satisfy a demand for immediacy of actions of a transfer device. The substrate transfer controlling apparatus comprises an input device (12) for inputting times required for actions of transfer devices (1a through 1c) and times required to process substrates in processing devices (3a through 9d), and a schedule calculator (21) for calculating execution times of actions of the transfer devices (1a through 1c) for allowing the time when a final one of the substrates to be processed is fully processed and returned from the substrate processing apparatus to be earliest, based on a predetermined conditional formula including, as parameters, the inputted times. The substrate transfer controlling apparatus further comprises an action commander (24) for instructing the corresponding transfer devices to perform the actions at the calculated execution times of the actions of the transfer devices (1a through 1c).
摘要翻译：本发明提供一种能够容易地使半导体制造装置等基板处理装置的生产能力最大化的基板转印控制装置，能够满足对转印装置的动作的即时性的要求。基板传送控制装置包括：输入装置（12），用于输入传送装置（1a至1c）的动作所需的时间和处理装置（3a至9d）中处理基板所需的时间;以及计算计算器（21），用于计算基于规定的条件式，将从基板处理装置开始最后处理的基板的处理时间最短的传送装置（1a〜1c）的动作的执行时间作为参数，输入时间。基板传送控制装置还包括动作指令器（24），用于指示相应的传送装置在计算出的传送装置（1a至1c）的动作的执行时间执行动作。

5. 发明申请

US20100273396A1 POLISHING METHOD, POLISHING APPARATUS AND METHOD OF MONITORING A SUBSTRATE 有权
标题翻译：抛光方法，抛光装置和监测基板的方法
公开(公告)号：US20100273396A1
公开(公告)日：2010-10-28
申请号：US12767095
申请日：2010-04-26
申请人： Yoichi KOBAYASHI , Yasumasa Hiroo
发明人： Yoichi KOBAYASHI , Yasumasa Hiroo
IPC分类号： B24B49/00
CPC分类号： B24B37/042 , B24B49/00
摘要： A method of polishing a substrate is described. The method includes rotating a polishing table having a polishing surface, holding a substrate by a top ring, bringing the substrate into contact with the polishing surface while swinging and rotating the top ring to polish the substrate, and monitoring a surface condition of the substrate by a monitoring sensor. A rotational speed of the polishing table and conditions of swing motion of the top ring are determined such that a position of the monitoring sensor, a position of a center of rotation of the top ring, and a direction of the swing motion of the top ring at a point of time when a predetermined period of time has elapsed after polishing of the substrate is started approximately coincide with their previous values at a point of time before the predetermined period of time has elapsed.
摘要翻译：描述了抛光衬底的方法。该方法包括旋转具有抛光表面的抛光台，通过顶环保持基板，使基板与抛光表面接触，同时摆动并旋转顶环以抛光基板，并且通过以下方式监视基板的表面状态监控传感器。确定抛光台的旋转速度和顶环的摆动运动的条件，使得监测传感器的位置，顶环的旋转中心的位置和顶环的摆动运动的方向在基板的研磨开始经过规定时间后的时间点，与经过了规定时间之前的时间点的先前值大致一致。

6. 发明申请

US20060161286A1 Substrate transfer controlling apparatus and substrate transferring method 有权
标题翻译：基板转印控制装置和基板转印方法
公开(公告)号：US20060161286A1
公开(公告)日：2006-07-20
申请号：US11385760
申请日：2006-03-22
申请人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
发明人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
IPC分类号： G06F19/00
CPC分类号： G06Q50/04 , G06Q10/04 , G06Q10/06 , H01L21/67276 , Y02P90/30 , Y10S414/135 , Y10S438/907 , Y10S438/908
摘要： A substrate transfer controlling apparatus which can easily maximize the throughput of a substrate processing apparatus such as a semiconductor fabrication apparatus, and can satisfy a demand for immediacy of actions of a transfer device. The substrate transfer controlling apparatus includes an input device (12) for inputting times required for actions of transfer devices (1a through 1c) and times required to process substrates in processing devices (3a through 9d), and a schedule calculator (21) for calculating execution times of actions of the transfer devices (1a through 1c) for allowing the time when a final one of the substrates to be processed is fully processed and returned from the substrate processing apparatus to be earliest, based on a predetermined conditional formula including, as parameters, the inputted times. The substrate transfer controlling apparatus further includes an action commander (24) for instructing the corresponding transfer devices to perform the actions at the calculated execution times of the actions of the transfer devices (1a through 1c).
摘要翻译：一种基板传送控制装置，其能够容易地使诸如半导体制造装置的基板处理装置的吞吐量最大化，并且可以满足对传送装置的动作的即时性的要求。基板传送控制装置包括：输入装置（12），用于输入传送装置（1a至1c）的动作所需的时间和处理装置（3a至9d）中处理基板所需的时间和时间表计算器 21），用于计算用于允许待处理的最后一个基板的时间从基板处理装置最早处理并返回到最早的传送装置（1a至1c）的执行时间，基于包括作为输入时间的参数的预定条件公式。基板传送控制装置还包括动作指令器（24），用于指示相应的传送装置在计算出的传送装置（1a至1c）的动作的执行时间执行动作。

7. 发明授权

US08112169B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08112169B2
公开(公告)日：2012-02-07
申请号：US12881522
申请日：2010-09-14
申请人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
发明人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
IPC分类号： G05B13/02 , G06F19/00 , B24B49/00 , B24B51/00
CPC分类号： B24B37/005 , B24B49/10
摘要： A polishing apparatus has a polishing table having a polishing surface and a top ring for pressing a substrate against the polishing surface while independently controlling pressing forces applied to a plurality of areas on the substrate. The polishing apparatus has a sensor for monitoring substrate conditions of a plurality of measurement points on the substrate, a monitor unit for performing a predetermined arithmetic process on a signal from the sensor to generate a monitor signal, and a controller for comparing the monitor signal of the measurement points with the reference signal and controlling the pressing forces of the top ring so that the monitor signal of the measurement point converges on the reference signal.
摘要翻译：抛光装置具有抛光台，其具有抛光表面和用于将衬底压靠在抛光表面上的顶环，同时独立地控制施加到衬底上的多个区域的按压力。抛光装置具有用于监测基板上的多个测量点的基板状况的传感器，用于对来自传感器的信号执行预定的运算处理以产生监视信号的监视单元，以及用于将监视信号测量点与参考信号，并控制顶环的按压力，使测量点的监视信号收敛于参考信号。

8. 发明申请

US20100029177A1 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US20100029177A1
公开(公告)日：2010-02-04
申请号：US12310877
申请日：2007-09-06
申请人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
发明人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
IPC分类号： B24B49/04 , B24B49/10
CPC分类号： B24B37/04 , B24B37/013
摘要： The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate. The polishing apparatus according to the present invention includes a polishing table (10) having a polishing surface, a top ring (14) configured to press the substrate against the polishing table by applying pressing forces independently to first plural zones on the substrate, a sensor (50) configured to detect a state of the film at plural measuring points, a monitoring device (53) configured to produce monitoring signals with respect to second plural zones on the substrate, respectively, a storage device configured to store plural reference signals each indicating a relationship between reference values of each monitoring signal and polishing times, and a controller configured to operate the pressing forces against the first plural zones such that the monitoring signals, corresponding respectively to the second plural zones, converge on one of the plural reference signals.
摘要翻译：抛光装置和抛光方法技术领域本发明涉及一种用于抛光半导体晶片等基板的平面化研磨装置和研磨方法。根据本发明的研磨装置包括具有研磨面的研磨台（10），顶环（14），其构造成通过对基板上的第一多个区域分别施加压力而将基板压靠在研磨台上，传感器（50），被配置为检测所述胶片在多个测量点的状态;监视装置（53），被配置为相对于所述基板上的第二多个区域产生监视信号;存储装置，被配置为存储多个参考信号，每个监测信号的参考值和抛光时间之间的关系;以及控制器，被配置为对第一多个区域施加按压力，使得分别对应于第二多个区域的监测信号在多个参考信号中的一个上收敛。

9. 发明申请

US20070243795A1 Polishing Apparatus And Polishing Method 有权
标题翻译：抛光装置和抛光方法
公开(公告)号：US20070243795A1
公开(公告)日：2007-10-18
申请号：US11596726
申请日：2005-06-20
申请人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
发明人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
IPC分类号： B24B51/00
CPC分类号： B24B37/005 , B24B49/10
摘要： A polishing apparatus has a polishing table (18) having a polishing surface (40) and a top ring (20) for pressing a substrate against the polishing surface (40) while independently controlling pressing forces applied to a plurality of areas (C1-C4) on the substrate. The polishing apparatus has a sensor (52) for monitoring substrate conditions of a plurality of measurement points on the substrate, a monitor unit (53) for performing a predetermined arithmetic process on a signal from the sensor (52) to generate a monitor signal, and a controller (54) for comparing the monitor signal of the measurement points with the reference signal and controlling the pressing forces of the top ring (20) so that the monitor signal of the measurement point converges on the reference signal.
摘要翻译：抛光装置具有抛光台（18），其具有研磨面（40）和用于将基板压靠在研磨面（40）上的顶环（20），同时独立地控制施加到多个区域（C1- C 4）。抛光装置具有用于监测基板上的多个测量点的基板状况的传感器（52），用于对来自传感器（52）的信号执行预定运算处理以产生监视信号的监视单元（53）以及控制器（54），用于将测量点的监视信号与参考信号进行比较，并控制顶环（20）的按压力，使得测量点的监视信号收敛于参考信号。

10. 发明授权

US08246417B2 Polishing apparatus and polishing method 有权
标题翻译：抛光设备和抛光方法
公开(公告)号：US08246417B2
公开(公告)日：2012-08-21
申请号：US12310877
申请日：2007-09-06
申请人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
发明人： Yoichi Kobayashi , Yasumasa Hiroo , Tsuyoshi Ohashi
IPC分类号： B24B49/00
CPC分类号： B24B37/04 , B24B37/013
摘要： The present invention relates to a polishing apparatus and a polishing method for polishing a substrate, such as a semiconductor wafer, to planarize the substrate. The polishing apparatus according to the present invention includes a polishing table (10) having a polishing surface, a top ring (14) configured to press the substrate against the polishing table by applying pressing forces independently to first plural zones on the substrate, a sensor (50) configured to detect a state of the film at plural measuring points, a monitoring device (53) configured to produce monitoring signals with respect to second plural zones on the substrate, respectively, a storage device configured to store plural reference signals each indicating a relationship between reference values of each monitoring signal and polishing times, and a controller configured to operate the pressing forces against the first plural zones such that the monitoring signals, corresponding respectively to the second plural zones, converge on one of the plural reference signals.
摘要翻译：抛光装置和抛光方法技术领域本发明涉及一种用于抛光半导体晶片等基板的平面化研磨装置和研磨方法。根据本发明的研磨装置包括具有研磨面的研磨台（10），顶环（14），其构造成通过对基板上的第一多个区域分别施加压力而将基板压靠在研磨台上，传感器（50），被配置为检测所述胶片在多个测量点的状态;监视装置（53），被配置为相对于所述基板上的第二多个区域产生监视信号;存储装置，被配置为存储多个参考信号，每个监测信号的参考值和抛光时间之间的关系;以及控制器，被配置为对第一多个区域施加按压力，使得分别对应于第二多个区域的监测信号在多个参考信号中的一个上收敛。

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